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Solar Wafers
In Stock

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SOI Wafers
Updated Weekly
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Sapphire
SSP & DSP
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Silicon wafers

Gallium Antimonide

SOI wafers - Silicon on Insulator

Gallium Arsenide - GaAs

Gallium Phosphide

GaN - Gallium Nitride

Ge

InP - Indium Phosphide

Thin Silicon

ZnO - Zinc Oxide

SiC - Silicon Carbide

Thermal Oxide

CdSe

CdTe

ZnS - Zinc selenide

ZnS - Zinc selenide

ZnTe - Zinc telluride

Wafer Dicing * Indium Tin Oxide * Float ZoneSuper-Thin & Flat Wafer Silicon 25um, 50um, 75um, 100um For MEMS

For PV grade silicon wafer,we can offer like as below.

1) Multicrystalline

1Kpc---------$7.50/ea.
5Kpc---------$7.30/ea.
10Kpc--------$6.90/ea.
100Kpc-------$6.80/ea.

2) Monocrystalline
1Kpc---------$6.50/ea.
5Kpc--------$5.90/ea.
10Kpc-------$5.70/ea.
100Kpc------$5.25/ea.

Solar Wafer Special

1) Si multi 150x150mm
P/Boron
Thickness 200+/-30um
Resistivity 0,5 – 3,0 Ohm*cm


2) Si multi 125x125mm
P/Boron
Thickness 200+/-30um
Resistivity 0,5 – 3,0 Ohm*cm


See below for spec sheets.

Material properties

 Mono-Crystalline Silicon Wafer Specification 125mm x 125mm

Property

Specification

Crystallinity

Mono-crystalline

Donor type/Dopant

P/Boron

Dislocation density(Etching Pit)

≤5000 pcs/cm2

Orientation

<100>1

Oxygen concentration

≤1.01018 atoms/cm3

Carbon concentration

≤51016 atoms/cm3

 

 

Electrical properties

 

Property

Specification

Resistivity

0.5-6.0 ohm.cm or 0.5~3.0 ohm.cm&3.0~6.0ohm.cm

 

 

Geometry

 

Property

Specification

Geometry

Pseudo Square

Thickness (T)

20020μm, refer Fig.

TTV

<30μm

Dimensions (WW)

Refer Fig.

Diameter ()

Refer Fig.

Saw marks

≤15μm

Surface quality

As cut, cleaned

Edge chips

≤2 per wafer, Depth≤1.0mm, Length≤1.0mm;No edge cracks

 

 

Package & Labels

 

Property

Specification

Inner box

200pcs/Box

Carton box

10 inner boxes/carton box, total 2000pcs per carton box

Labels

P.O. No., Lot No., No.of wafers, Dimension

Please email us if these interest you!
or fill out the form!

CdTe Wafers also in stock!

Name
Organization
Email
Phone
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Wafer
Diameter
Type  N       or        P
Orientation
Resistivity
Dopant
Thickness
Sides Polished  One-Side     Two-Side
Quantity
Other Requests
 
 

Material properties

Multi-Crystalline Silicon Wafer Specification 156mm x 156mm

Property

Specification

Crystallinity

Multi-crystalline

Donor type/Dopant

P/Boron

Oxygen concentration

≤1.01018 atoms/cm3

Carbon concentration

≤51016 atoms/cm3

 

 

Electrical properties

 

Property

Specification

Resistivity

0.5-2.0 ohm. cm

Lifetime

≥2us (u-PCD type)

 

 

Geometry

 

Property

Specification

Geometry

Square

Thickness (T)

20020μm

TTV

≤30μm

Dimensions (WW)

Refer Fig.

Diameter ()

Refer Fig.

Saw marks

≤15μm

Surface quality

As cut, cleaned

Edge chips

≤2 per wafer, Depth≤0.3mm, Length≤0.5mm;No edge cracks

 

 

Package & Labels

 

Property

Specification

Inner box

To be determined

Carton box

To be determined

Labels

P.O. No., Lot No., No.of wafers, Dimension

 

Silicon wafers

Gallium Antimonide

SOI wafers - Silicon on Insulator

Gallium Arsenide - GaAs

Gallium Phosphide

GaN - Gallium Nitride

Ge

InP - Indium Phosphide

Thin Silicon

ZnO - Zinc Oxide

SiC - Silicon Carbide

Thermal Oxide

CdSe

CdTe

ZnS - Zinc selenide

ZnS - Zinc selenide

ZnTe - Zinc telluride