Silicon Wafer Flatness

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Silicon Wafer Flatness

One of the most important process of making a microchip is the Photolithography process. The flatter the silicon substrate the better for Photolithography.

Flatness is the linear thickness variation across the the polished surface of the wafer, or a specific area of the wafer.

We have wafer's with a Total Thickness Variation (TTV) of less than 1 micron!

Below are just some ultra-flat Si Wafers

Item Type/Dop Ori. Dia (mm) Thck (μm) Pol Res Ωcm Specs
6971 n-type Si:P [100-25° towards[110]] ±1° 6" 675 P/P 1-100 SEMI notch Prime, Empak cst, TTV<1μm
S5594 P/B [100] 5" 990 ±8 P/P 1--25 SEMI Prime, Empak cst, TTV<1μm
S5597 n-type Si:Sb [100] ±1° 5" 1,200 ±10 P/E 0.001-0.025 SEMI Prime, SEMI notch, TTV<1μm Empak cst
F709 n-type Si:P [100] 5" 762 ±12 P/P May-35 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm
S6284 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
C310 Intrinsic Si:- [100] 4" 510 ±5 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
G706 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6356 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
J302 P/B [100] 4" 600 P/P 1-10 SEMI Prime, 1Flat, TTV<μm, Empak cst
6570 n-type Si:P [100] 4" 400 P/P 1-10 SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst
4975 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
L302 P/B [100] 4" 625 P/P 1-50 SEMI Prime, 1Flat,TTV<1μm, Empak cst
J066 n-type Si:P [100] 4" 500 P/P 1-100 SEMI Prime, 2Flats, TTV<1μm, With Lasermark, Empak cst
4154 P/B [110] ±0.5° 3" 360 P/P 1-10 SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish
6710 P/B [100] 3" 375 P/P 1-20 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6826 P/B [100] 3" 475 P/P 1-50 SEMI Prime, 2Flats, Empak cst, TTV<0.3μm
D750 P/B [100] 3" 420 P/P <1 SEMI Prime, 2Flats, Empak cst, TTV<1μm
S5580 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
S5824 n-type Si:P [100] ±1° 3" 300 ±10 P/P 5-10 SEMI Prime, TTV<1μm, Empak cst
6400 n-type Si:P [100] 3" 350 P/P 1-25 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6818 n-type Si:P [100] 3" 381 P/P 1-30 SEMI Prime, 2Flats, Empak cst, TTV<1μm
H988 P/B [100] 3" 580 P/P 1-100 SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst
H714 n-type Si:P [100] 3" 350 P/P 1-25 SEMI Prime, 1Flat, TTV<1μm, Empak cst