Get Your Quote FAST!
One of the most important process of making a microchip is the Photolithography process. The flatter the silicon substrate the better for Photolithography.
Flatness is the linear thickness variation across the the polished surface of the wafer, or a specific area of the wafer.
We have wafer's with a Total Thickness Variation (TTV) of less than 1 micron!
Below are just some ultra-flat Si Wafers
Item | Type/Dop | Ori. | Dia (mm) | Thck (μm) | Pol | Res Ωcm | Specs |
6971 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 675 | P/P | 1-100 | SEMI notch Prime, Empak cst, TTV<1μm |
S5594 | P/B | [100] | 5" | 990 ±8 | P/P | 1--25 | SEMI Prime, Empak cst, TTV<1μm |
S5597 | n-type Si:Sb | [100] ±1° | 5" | 1,200 ±10 | P/E | 0.001-0.025 | SEMI Prime, SEMI notch, TTV<1μm Empak cst |
F709 | n-type Si:P | [100] | 5" | 762 ±12 | P/P | May-35 | SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm |
S6284 | n-type Si:P | [100] ±1° | 4" | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<1μm, in Empak cst |
C310 | Intrinsic Si:- | [100] | 4" | 510 ±5 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
G706 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
6356 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
J302 | P/B | [100] | 4" | 600 | P/P | 1-10 | SEMI Prime, 1Flat, TTV<μm, Empak cst |
6570 | n-type Si:P | [100] | 4" | 400 | P/P | 1-10 | SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst |
4975 | n-type Si:Sb | [211] ±0.5° | 4" | 1,500 ±15 | P/P | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
L302 | P/B | [100] | 4" | 625 | P/P | 1-50 | SEMI Prime, 1Flat,TTV<1μm, Empak cst |
J066 | n-type Si:P | [100] | 4" | 500 | P/P | 1-100 | SEMI Prime, 2Flats, TTV<1μm, With Lasermark, Empak cst |
4154 | P/B | [110] ±0.5° | 3" | 360 | P/P | 1-10 | SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish |
6710 | P/B | [100] | 3" | 375 | P/P | 1-20 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
6826 | P/B | [100] | 3" | 475 | P/P | 1-50 | SEMI Prime, 2Flats, Empak cst, TTV<0.3μm |
D750 | P/B | [100] | 3" | 420 | P/P | <1 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
S5580 | n-type Si:P | [100] ±1° | 3" | 2,286 ±13 | P/P | 15-28 | SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers |
S5824 | n-type Si:P | [100] ±1° | 3" | 300 ±10 | P/P | 5-10 | SEMI Prime, TTV<1μm, Empak cst |
6400 | n-type Si:P | [100] | 3" | 350 | P/P | 1-25 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
6818 | n-type Si:P | [100] | 3" | 381 | P/P | 1-30 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
H988 | P/B | [100] | 3" | 580 | P/P | 1-100 | SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst |
H714 | n-type Si:P | [100] | 3" | 350 | P/P | 1-25 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |