Gallium Nitride Wafers and Aluminum Nitride


GaN on Sapphire Wafer

1.GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate. 50 mm diam on axis, n-type, GaN thickness ~0.5 um

2.GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.

3.GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness ~(0.5-0.8) um. AIN thickness ~0.1um.

4.GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire. 50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.