I am looking for a wafer which have resistivity lower than 1 ohm-cm. In order not to confront an unwanted case in the future, I just want to know what do you mean by "Degenerate Doped Si Wafer" in the description part. Do you want to say the energy difference between Fermi Level and valence band is less than 3kT or do you mean something else?
Degenerately Doped Silicon Wafers
What is a Degenerately Doped Silicon Wafer?
A PhD student asked the following question:
UniversityWafer, Inc. Answered:
The concept of a degenerately doped semiconductor is not a precise one. A degenerately doped semiconductor is one that is so heavily doped that it starts acting like a metal. A degenerately doped semiconductor is one with Nc<1E18/cc which corresponds to p-type Ro<0.040 or n-type Ro<0.020. We consider degenerately doped Silicon to have Ro<0.020 Ohmcm.
Below are some example specs that are degenerately doped Si.
Resitivities of
0.01-0.02 ohm-cm
0.001-0.005 ohm-cm
0.0001-0.0005 ohm-cm
We can also depost thermal oxide, nitride and metals on any degenerately doped silicon wafer in small and large quantities.
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Degenerately Doped Silicon for MEMS Devices
A University researcher requested the following quote:
Our lab is focused on MEMS devices. We usually use silicon and glass wafers for fabricating sensors and actuators.
In our project, we would like to pattern both top and bottom of the wafer and then etch it in a KOH solution up to the full thickness (~500µm) of the wafer. That is why I would like a thick oxide. Another option (which is actually better than just a thick oxide) is to deposit 100 nm or 300 nm LPCVD Nitride in this wafer. Is it possible? If so, what would be the price of 50 wafers (with 300 µm thermal oxide + 100/300 nm LPCVD nitride)?
We are currently looking for low resistivity (0.001-0.005 Ohm.cm) 4" silicon prime wafers, with 1µm of wet thermal oxide on both sides, similar to item 1583 in your catalog. But in our case, we would rather to have a DSP wafers (instead of the SSP of the item 1583). Is it possible to customize this item to our needs? Our idea is to buy up to 50 wafers, depending on the price.
UniversityWafer, Inc. Quoted:
4" P <100> .01-.05 ohm-cm 500+/-25 um DSP wafers with 3000A+/-15 % of thermal oxide on both sides
Please ask for pricing.
Why Does Degenerately Doped Silicon acts Like a Metal!
A semiconductor that is degenerately doped shows metal-like behavior when heated. This is because the 
dopants are much heavier than the host atoms, so they can accept an electron from their neighboring atom. This is a degenerate state, so it is not a true metal. However, it can behave like a metal if the doping is high enough.
A semiconductor that is heavily doped is called a degenerately doped semiconductor. When this happens, the material becomes a metal. This is due to the fact that the Nc value is greater than 1E18/cc. This corresponds to a p-type and an n-type. As a result, a semiconductor with this property would be more difficult to work with.
A semiconductor's electrical properties depend on the amount of impurities added. Light, moderate, or high doping is termed an extrinsic semiconductor. In contrast, degenerate silicon is degenerate, which means it acts like a metal. It's also called an activated semiconductor. In the semiconductor industry, this property is used to make transistors.
When the dopants are highly concentrated, the conductivity increases. More carriers are available to conduct, which makes degenerate semiconductors more commonly used in integrated circuits. To determine the level of doping in a semiconductor, superscript plus and minus symbols are used. The former signifies an n-type semiconductor with high doping, while the latter indicates a heavily doped p-type material. While degenerately doped semiconductors have higher conductivity than intrinsic crystalline silicon, they do not have as much energy.
PHD Candiate asks:
Yes, I am looking for a wafer which have resistivity lower than 1 ohm-cm. In order not to confront an unwanted case in the future, I just want to know what do you mean by "Degenerate Doped Si Wafer" in the description part. Do you want to say the energy difference between Fermi Level and valence band is less than 3kT or do you mean something else? I am looking forward to your reply. Thank you.
Our Engineer's Reply:
Yes, though the concept of a degenerately doped semiconductor is not a precise one. A degenerately doped semiconductor is one that is so heavily doped that it starts acting like a metal. A degenerately doped semiconductor is one with Nc<1E18/cc which corresponds to p-type Ro<0.040 or n-type Ro<0.020. We consider degenerately doped Silicon to have Ro<0.020 Ohmcm.
The following wafer item was purchased:
Si Wafer Item #785
100mm P/B <100> 0.001-0.005 ohm-cm 525um SSP Prime Grade
Below are just some of the degerately doped silicon that we have in stock:
150mm Degenerately Doped Silicon Wafer (Buy Online) |
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Item |
Typ/Dop |
Ori. |
Dia. |
Thck/(μm) |
Polish |
Res Ωcm |
|
| SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Non-standard Edge profile, Oxygen=(11-13)ppma, Carbon<1ppma, Empak cst | |||||||
| TS006 | P/B | [100] | 6" | 525 ±15 | SSP | MCZ 0.01-0.02 {0.015-0.017} | |
| SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Oxygen=(3-9)ppma, Carbon<1ppma, Back-side: Acid etch, Empak cst | |||||||
| TS004 | P/B | [100] | 6" | 675 ±15 | SSP | MCZ 0.01-0.02 {0.013-0.017} | |
| SEMI Prime, 1Flat 57.5mm @ <001>±0.5° {not @ <011>}, Oxygen=(3-9)ppma, Carbon<1ppma, Back-side: Acid etch, Empak cst | |||||||
| TS005 | P/B | [100] | 6" | 675 ±15 | SSP | MCZ 0.01-0.02 {0.013-0.016} | |
| SEMI Prime, JEIDA Flat 47.5mm, Back-side LTO (0.3-0.4)μm, TTV<6μm, Empak cst | |||||||
| TS104 | P/B | [100] | 6" | 625 ±15 | SSPOx | 0.01-0.02 {0.0139-0.0144} | |
| SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm | |||||||
| F253 | P/B | [100] | 6" | 1,500 | DSP | 0.01-0.02 | |
| SEMI, 1Flat (57.5mm), Empak cst | |||||||
| 7258 | P/B | [100] | 6" | 650 | DSP | 0.001-0.005 | |
| L066 | N/Sb | [100] | 6" | 675 | SSP | 0.01-0.02 | |
| C673 | N/Sb | [100] | 6" | 675 | SSP | 0.008-0.020 | |
| TS037 | N/Ph | [111-1.5°] ±0.5° | 6" | 675 | SSP | 3-12 {5.0-8.8} | |
| TS037 | N/Ph | [111-1.5°] ±0.5° | 6" | 675 | SSP | 3-12 {5.0-8.8} | |
| 6484 | P/B | [100] | 6" | 675 | SSP | 0.001-0.005 | |
| SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst | |||||||
| TS109 | N/As | [111-4°] ±0.5° | 6" | 508 ±15 | SSP | 0.0023-0.0026 | |
| TS109 | N/As | [111-4°] ±0.5° | 6" | 508 ±15 | SSP | 0.0023-0.0026 | |
| TS108 | P/B | [111-3°] ±0.5° | 6" | 625 ±15 | SSP | 0.01-0.02 | |
| SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm | |||||||
| J668 | P/B | [111] ±0.5° | 6" | 675 | E/E | 0.010-0.025 | |
| SEMI Prime, 1Flat (57.5mm), Back-side LTO 400±40nm, TTV<6μm, Empak cst | |||||||
| TS105 | P/B | [111-1.5°] ±0.35° | 6" | 675 | SSPOx | 0.001-0.002 {0.0017-0.0018} | |
| SEMI, 1Flat(57.5mm), in individual wafer cassettes | |||||||
| 2533 | N/As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | |
| E533 | N/As | [100] | 6" | 1,000 | L/L | 0.0033-0.0037 | |
| SEMI Prime, 2Flats (PF @ <110>±1°, SF 135° from PF}, Laser Mark, Empak cst | |||||||
| TS018 | N/As | [100] | 6" | 575 ±15 | DSP | 0.001-0.005 {0.0040-0.0041} | |
| SEMI Prime, 1Flat (57.5mm), Empak cst, Back-side LTO (0.64-0.666)um, TTV<4μm, Bow/Warp<20μm | |||||||
| 4204 | N/As | [100] | 6" | 675 | SSPOx | 0.001-0.005 | |
| SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32-0.46)Ohmcm, 3.20±0.16μm thick, Empak cst | |||||||
| 5541 | N/Ph | [100] | 6" | 675 | SSPOx | 0.001-0.002 | |
| SEMI Prime, 1Flat (57.5mm), TTV<5μm, LTO (0.3-0.6)μm, Empak cst | |||||||
| TS101 | N/As | [100] | 6" | 675 ±15 | SSPOx | 0.001-0.005 {0.0036-0.0041} | |
| TS037 | N/Ph | [111-1.5°] ±0.5° | 6" | 675 | SSP | 3-12 {5.0-8.8} | SEMI Prime, 1Flat (57.5mm), Empak cst |
| 6559 | N/Ph | [111] ±0.5° | 6" | 675 | SSP | 1-100 | Prime, NO Flats, Empak cst |
| TS112 | N/As | [111-4°] ±0.5° | 6" | 508 | SSP | 0.0038-0.0042 | SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
| TS034 | N/As | [111-4°] ±0.25° | 6" | 625 ±15 | SSPOx | 0.0024-0.0035 {0.0029-0.0030} | SEMI Prime, 1Flat (57.5mm), Back-side: LTO 600nm thick, Empak cst |
| TS109 | N/As | [111-4°] ±0.5° | 6" | 508 ±15 | SSP | 0.0023-0.0026 | SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst |
| SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm | |||||||
| TS102 | N/As | [111-4°] ±0.5° | 6" | 675 | SSP | 0.001-0.005 | |
| SEMI Prime, JEIDA Flat (47.5mm), Back-side LTO (0.45-0.55)μm, TTV<6μm, Empak cst | |||||||
| TS107 | N/As | [111-2.5°] ±0.5° | 6" | 625 ±15 | SSPOx | 0.001-0.004 {0.0021-0.0036} | |
| SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst | |||||||
| 1660 | N/As | [100] | 6" | 675 | OxSSPOx | 0.001-0.005 | |
125mm Degenerately Doped Silicon Wafer |
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| Item | Typ/Dop | Ori. | Dia. | Thck/(μm) | Polish | Res Ωcm | Specs |
| 9228 | P/B | [100] | 5" | 525 | SSPOx | 0.002-0.004 {0.0031-0.0035} | SEMI Prime, 1Flat, Free of Striations, TTV<5μm, Back-Side LTO seal 0.50±0.05μm thick, in Empak csts (7+7) wafers |
| X7134 | N/As | [100] | 5" | E/E | 0.001-0.005 | SEMI Test, 1Flat, in opened Empak cst | |
| TS003 | N/As | [100-1°] ±0.25° | 5" | 375 | SSPOx | 0.0010-0.0035 {0.0029-0.0032} | SEMI, 1Flat, HBSD+LTO 800nm, Empak cst |
| 6985 | N/As | [100] | 5" | 625 | SSP | 0.001-0.007 | SEMI TEST, 2Flats, Empak cst |
| X7167 | N/Sb | [100] | 5" | 740 | E/E | SEMI 2Flats (2nd @135°), in opened Empak cst, 125.63mm diameter | |
| B862 | N/Sb | [111-3.0°] ±0.5° | 5" | 625 | SSP | 0.015-0.020 {0.0152-0.0185} | SEMI Prime, 2Flats, Empak cst |
| TS106 | N/Sb | [111-4°] ±0.5° | 5" | 525 | SSPOx | 0.008-0.020 {0.0160-0.0168} | SEMI Prime, 1Flat, Back-side LTO (0.45-0.55)μm, TTV<8μm, Empak cst, Cassettes of 25 + 10 + 10 wafers |
| 6664 | N/Sb | [111-3.5°] ±1.0° | 5" | 375 ±15 | SSP | 0.005-0.020 | SEMI Prime, 2Flats, Empak cst |
| TS060 | N/Ph | [111-4°] ±0.5° | 5" | 433 | SSPOx | 0.001-0.002 {0.0014-0.0017} | SEMI Prime, 1Flat, Back-side: LTO 850nm, Free of Striations, Empak cst |
| 7188 | N/As | [111] | 5" | 625 | E/E | 0.001-0.005 | 1Flat, Empak cst |
| 6683 | P/B | [111-3.5°] ±1.0° | 5" | 375 ±15 | OxSSPOx | 0.012-0.018 | Prime, 1Flat, Empak cst |
| E683 | P/B | [111-3.5°] ±1.0° | 5" | 375 ±15 | OxSSPOx | 0.012-0.018 | Prime, 1Flat, Empak cst |
| D925 | N/As | [100] | 5" | 625 | OxSSPOx | 0.001-0.007 | SEMI Prime, 2Flats, Thermal Oxide 3.5±0.5μm thick, Empak cst |
100mm Degenerately Doped Silicon Wafer (Buy Online) |
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| Item | Typ/Dop | Ori. | Dia. | Thck/(μm) | Polish | Res Ωcm | Specs |
| I046 | P/B | [100] | 4" | 250 | DSP | 0.1-0.5 | SEMI Prime, 2Flats, Empak cst |
| 6854 | P/B | [100] | 4" | 525 | SSP | 0.1-0.2 | SEMI Prime, 2Flats, Empak cst |
| E654 | P/B | [100] | 4" | 320 | DSP | 0.08-0.12 | SEMI Test, 2Flats, Empak cst, TTV<2μm, SURFACE DEFECTS |
| 7010 | P/B | [100] | 4" | 250 | DSP | 0.025-0.035 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Diameter 100.0±0.2mm |
| 6881 | P/B | [100] | 4" | 500 | DSP | 0.025-0.035 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 3031 | P/B | [100-6° towards[110]] ±0.5° | 4" | 525 | SSP | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst |
| X090 | P/B | [100] | 4" | 300 ±7 | DSP | 0.014-0.021 | Prime, 2Flats, Empak cst, TTV<1μm |
| 7089 | P/B | [100] | 4" | 381 ±7 | DSP | 0.014-0.021 | SEMI Prime, 2Flats, TTV<1μm, Empak cst. |
| 7340 | P/B | [100] | 4" | 250 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| F966 | P/B | [100] | 4" | 250 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| S5896 | P/B | [100] ±1° | 4" | 300 | DSP | 0.01-0.05 | SEMI Prime, Empak cst, TTV<2μm |
| 5833 | P/B | [100] | 4" | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
| 6349 | P/B | [100] | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| M066 | P/B | [100] | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 7085 | P/B | [100] | 4" | 800 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| TS021 | P/B | [100] | 4" | 525 | SSPOx | 0.009-0.015 {0.0123-0.0140} | SEMI Prime, 2Flats, Back-side: LTO 400nm, Free of Striations, Empak cst |
| T155 | P/B | [100] | 4" | 525 | DSPOx | 0.008-0.020 | SEMI Prime, 2Flats, Empak cst |
| 6952 | P/B | [100] | 4" | 3,100 | DSP | 0.006-0.009 | SEMI Prime, 2Flats, Individual cst, Group of 4 wafers |
| 5419 | P/B | [100] | 4" | 300 | DSP | 0.001-0.005 | SEMI Test, 2Flats, Empak cst, Both sides with scratches |
| L419 | P/B | [100] | 4" | 300 | DSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| 6919 | P/B | [100] | 4" | 300 | SSP | 0.001-0.010 | SEMI Prime, 2Flats, Empak cst |
| D919 | P/B | [100] | 4" | 300 | SSP | 0.001-0.010 | SEMI TEST - scratches, in unsealed cst, 2Flats, Lasermark, Empak cst |
| I135 | P/B | [100] | 4" | 500 | DSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Wafers with striation marks |
| 7282 | P/B | [100] | 4" | 525 | DSP | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Free of striation marks |
| 6719 | P/B | [100] | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 6900 | P/B | [100] | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 7383 | P/B | [100] | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| I383 | P/B | [100] | 4" | 525 | SSP | 0.001-0.002 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| K173 | P/B | [100] | 4" | 525 | BROKEN | 0.001-0.005 | Broken wafer (shattered into many pieces), 1Flat |
| 5420 | P/B | [100] | 4" | 800 | C/C | 0.001-0.005 | SEMI, 2Flats, Empak cst, With striation marks |
| G134 | P/B | [100] | 4" | 1,000 ±50 | DSP | 0.001-0.005 | Prime, NO Flats, Empak cst |
| L135 | P/B | [100] | 4" | 2,000 ±50 | DSP | 0.001-0.003 | Prime, NO Flats, Individual cst |
| D372 | P/B | [111-3°] | 4" | 400 | SSP | 0.015-0.018 | SEMI Prime, 1Flat, Empak cst |
| TS008 | P/B | [111] ±1° | 4" | 380 ±10 | SSP | 0.010-0.015 {0.0124-0.0136} | SEMI Prime, 1Flat, Empak cst, TTV<8μm |
| TS117 | P/B | [111-3°] ±0.5° | 4" | 381 ±15 | SSPOx | 0.01-0.02 {0.0168-0.0172} | SEMI Prime, 1Flat, Back-side LTO (0.8-0.9)μm, TTV<5μm Cassettes of 22 wafers |
| 4279 | P/B | [111-4°] ±0.5° | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst |
| F508 | P/B | [111] ±0.5° | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<3μm, Bow<10μm, Warp<30μm |
| G508 | P/B | [111] ±0.5° | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<3μm, Bow<10μm, Warp<30μm |
| TS033 | P/B | [111-4°] ±0.5° | 4" | 525 | SSP | 0.01-0.02 {0.0140-0.0186} | SEMI Prime, 1Flat, Back-side: Hard-Damage, Empak cst |
| TS077 | P/B | [111-4°] ±0.5° | 4" | 525 | SSP | 0.01-0.02 {0.0140-0.0186} | SEMI Prime, 1Flat, Empak cst (4+5+5+10+15+20 wafers) |
| TS114 | P/B | [111-3.5°] ±0.5° | 4" | 525 | SSP | 0.01-0.02 {0.0132-0.0136} | SEMI Prime, 1Flat, TTV<5μm, Empak cst, Cassettes of 22 + 19 |
| TS115 | P/B | [111-3°] ±0.5° | 4" | 525 ±15 | SSP | 0.01-0.02 {0.0165-0.0169} | SEMI Prime, 1Flat, TTV<5μm, Lasermarked, Cassettes of 21 + 13 wafers |
| TS116 | P/B | [111-3°] ±0.5° | 4" | 525 ±15 | SSP | 0.01-0.02 {0.0158-0.0168} | SEMI Prime, 1Flat, TTV<5μm, Empak cst, Cassettes of 22 wafers |
| TS038 | P/B | [111-3.5°] ±0.5° | 4" | 525 ±15 | SSP | 0.007-0.009 {0.0071-0.0085} | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS069 | P/B | [111-3.5°] ±0.5° | 4" | 525 ±15 | SSP | 0.007-0.009 {0.0071-0.0085} | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS031 | P/B | [111-3.5°] ±1° | 4" | 475 | SSP | 0.005-0.020 {0.0138-0.0150} | SEMI Prime, 1Flat, Back-side Acid Etch, Empak cst |
| C228 | P/B | [111-4°] ±0.5° | 4" | 525 ±15 | SSPOx | 0.005-0.015 {0.0086-0.0135} | SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back-side |
| TS032 | P/B | [111-3.5°] ±0.5° | 4" | 525 | SSP | 0.004-0.008 {0.0059-0.0071} | SEMI Prime, 1Flat, Free of Striations, Empak cst (7+19+22+3×25 wafers) |
| TS113 | P/B | [111-3.5°] ±0.5° | 4" | 525 | SSP | 0.004-0.008 {0.0054-0.0067} | SEMI Prime, 1Flat, TTV<6μm, Empak cst, Cassettes of 22 wafers |
| TS016 | P/B | [111] ±1° | 4" | 350 ±10 | DSP | 0.002-0.005 {0.0039-0.0042} | SEMI Prime, 1Flat, Free of Striations, Empak cst |
| 1223 | P/B | [111-3°] ±0.5° | 4" | 525 | SSP | 0.002-0.016 | SEMI Prime, 1Flat, in Empak cassettes of 4 & 5 wafers |
| D858 | P/B | [111-3°] | 4" | 525 | SSP | 0.002-0.004 | SEMI Prime, 1Flat, Empak cst |
| E389 | P/B | [111] ±0.5° | 4" | 300 | DSP | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, With Lasermark, With striation marks |
| TS049 | P/B | [111-3.5°] ±1° | 4" | 300 ±15 | SSP | 0.001-0.002 {0.0018-0.0019} | Prime, 1Flat, TTV<5μm, Free of Striations, Empak cst |
| 7284 | P/B | [111] ±0.5° | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS009 | P/B | [111-3°] ±0.5° | 4" | 750 | SSP | 0.001-0.005 {0.0035-0.0042} | SEMI Prime, 1Flat, Edge profile: R type, Empak cst, cassettes of 7 + 12 wafers |
| D599 | P/B | [111] ±0.5° | 4" | 1,000 | DSP | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
| F022 | P/B | [111] ±0.3° | 4" | 350 ±5 | DSP | <0.05 | SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow/Wrp<15μm |
| 4949 | P/B | [111] ±0.5° | 4" | 1,000 | SSP | <0.01 | SEMI Prime, 1Flat, Empak cst |
| 4024 | N/As | [110] ±0.5° | 4" | 275 | DSP | 0.001-0.005 | SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°, |
| Secondary at 70.5°±5° CW from Primary, Empak cst | |||||||
| 4293 | N/As | [110] ±0.5° | 4" | 275 ±10 | DSP | 0.001-0.005 | SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst, TTV<5μm |
| E024 | N/As | [110] ±0.5° | 4" | 275 ±10 | DSP | 0.001-0.005 | SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst |
| L808 | N/As | [110] ±0.5° | 4" | 500 | DSP | 0.001-0.005 | SEMI Prime, 1Flat @ [111], Empak cst |
| H562 | N/As | [110] ±0.5° | 4" | 525 | SSP | 0.001-0.005 | Prime, 1Flat @ <1,-1,0>, Empak cst |
| 6562 | N/As | [110] ±0.5° | 4" | 525 | E/E | 0.001-0.005 | SEMI Prime, 1Flat @ <1,-1,0>, Empak cst |
| 6535 | N/Ph | [100] | 4" | 525 | SSP | 0.3-0.5 | SEMI, 2Flats, Empak cst |
| E134 | N/Ph | [100] | 4" | 275 | DSP | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Both sides with scratches |
| 7017 | N/Sb | [100] | 4" | 450 | SSP | ~0.03 | SEMI Prime, 1Flat, Empak cst, Cassettes of 1 + 3 wafers |
| H304 | N/Sb | [100] | 4" | 525 | SSP | 0.020-0.022 | Prime, 2Flats, Empak cst |
| E031 | N/Sb | [100-6° towards[110]] ±0.5° | 4" | 525 | SSP | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst |
| K932 | N/Sb | [100] | 4" | 275 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| TS126 | N/Sb | [100] ±1° | 4" | 300 | SSP | 0.01-0.02 {0.0143-0.0156} | SEMI Prime, 2Flats, Empak cst |
| B905 | N/Sb | [100] | 4" | 310 ±15 | DSP | 0.010-0.025 | SEMI Test, 2Flats, TTV<5μm, Light defects on back side, Empak cst |
| TS027 | N/Sb | [100-2.5°] ±0.5° | 4" | 380 ±10 | DSPOx | 0.01-0.02 {0.0119-0.0131} | SEMI Prime, 2Flats, Empak cst, TTV<5μm, Back-side LTO 5,000A |
| TS028 | N/Sb | [100-2.5°] ±0.5° | 4" | 500 ±10 | DSP | 0.01-0.02 {0.0144-0.0148} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| TS125 | N/Sb | [100] | 4" | 525 | SSPOx | 0.01-0.02 {0.0149-0.0156} | SEMI Prime, 2Flats, Back-side LTO (0.45-0.55)μm, TTV<7μm, Cassettes of 22 wafers |
| 6790 | N/Sb | [100] | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| F138 | N/Sb | [100] | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| TS040 | N/Sb | [100] ±1° | 4" | 525 | SSPOx | 0.005-0.020 {0.0161-0.0182} | SEMI Prime, 2Flats, Back-Side: LTO 400nm, TTV<5μm, Bow<5μm, Warp<10μm, Empak cst. |
| TS044 | N/Sb | [100] | 4" | 525 | SSP | 0.005-0.020 {0.0133-0.0155} | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS127 | N/As | [100] ±1° | 4" | 360 ±15 | DSP | 0.004-0.008 {0.0054-0.0067} | SEMI Prime, 2Flats, TTV<5μm, Cassettes of 22 + 21 + 19 wafers |
| 6304 | N/As | [100] | 4" | 525 | SSP | 0.0025-0.0035 | SEMI Prime, 2Flats, Empak cst |
| S5889 | N/As | [100] | 4" | 440 ±10 | DSP | 0.002-0.004 | SEMI Test, 1Flat, Empak cst, TTV<1μm, Non-Prime wafers, cannot be reworked |
| TS128 | N/As | [100] | 4" | 525 | SSP | 0.002-0.005 {0.0026-0.0030} | SEMI Prime, 2Flats, TTV<7μm, Empak cst, Cassettes of 22 wafers |
| U671 | N/As | [100] | 4" | 545 | E/E | 0.002-0.004 | SEMI, 1Flat, Empak cst |
| 6403 | N/As | [100] | 4" | 525 | DSP | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 6401 | N/As | [100] | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| F219 | N/As | [100] | 4" | 525 | SSP | 0.001-0.005 | SEMI Test (Chipped edge), 2Flats, Empak cst |
| TS062 | N/As | [100] | 4" | 525 | SSP | 0.001-0.005 {0.0029-0.0037} | SEMI Prime, 2Flats, Empak cst, TTV<7μm, Bow<20μm, Warp<25μm |
| F562 | N/As | [100] | 4" | 525 | PlyASSP | 0.001-0.005 | With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, |
| [More Info] | |||||||
| E720 | N/As | [100] | 4" | 550 ±10 | DSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| 7347 | N/As | [100] | 4" | 300 | SSP | <0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 4975 | N/Sb | [211] ±0.5° | 4" | 1,500 ±15 | DSP | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
| F975 | N/Sb | [211] ±0.5° | 4" | 1,600 | C/C | 0.01-0.02 | SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee |
| S5810 | N/Ph | [111] ±1.0° | 4" | 525 | SSP | 0.3-50.0 | SEMI Prime, 2Flats, Empak cst |
| S5840 | N/Ph | [111] ±1.0° | 4" | 565 ±10 | E/E | 0.3-50.0 | SEMI Prime, Empak cst |
| TS067 | N/Sb | [111-4°] ±0.5° | 4" | 457 | SSP | 0.02-0.05 {0.0204-0.0342} | SEMI Prime, 2Flats, Empak cst |
| TS078 | N/Sb | [111-4°] ±0.5° | 4" | 457 | SSP | 0.02-0.05 {0.0204-0.0342} | SEMI Prime, 2Flats, Empak cst |
| 7360 | N/Sb | [111] | 4" | 525 | SSP | 0.0113-0.0118 | Prime, 2Flats, Empak cst |
| TS029 | N/Sb | [111-3°] ±0.5° | 4" | 381 ±15 | SSP | 0.01-0.02 {0.014-0.018} | SEMI Prime, 2Flats, Back-side: Acid etch, Laser Mark, Empak cst (3+22+5×25 wafers) |
| 6433 | N/Sb | [111-0.5° towards[-1,-1,2]] ±0.1° | 4" | 525 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| TS118 | N/Sb | [111-4°] ±0.5° | 4" | 381 | SSP | 0.008-0.020 {0.0116-0.0194} | SEMI Prime, 2Flats, HBSD, Empak cst, Cassettes of 22 wafers |
| TS119 | N/Sb | [111-4°] ±0.5° | 4" | 381 | SSP | 0.008-0.020 {0.0108-0.0141} | SEMI Prime, 2Flats, HBSD, Cassettes of 7 + 3 wafers |
| TS139 | N/Sb | [111-4°] ±0.5° | 4" | 381 | SSP | 0.008-0.020 | SEMI Prime, 2Flats, HBSD, Empak cst, Cassettes of 5 + 15 wafers |
| 9544 | N/Sb | [111-4°] ±0.5° | 4" | 420 | SSPOx | 0.008-0.018 {0.0138-0.0151} | SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal |
| TS020 | N/Sb | [111-4°] ±0.5° | 4" | 490 | SSP | 0.007-0.020 {0.016-0.017} | SEMI Prime, 2Flats, Empak cst |
| TS064 | N/Sb | [111-4°] ±0.5° | 4" | 525 | SSP | 0.007-0.020 {0.0157-0.0171} | SEMI Prime, 2Flats, Empak cst |
| TS068 | N/Sb | [111-3°] ±0.5° | 4" | 525 ±15 | SSP | 0.006-0.020 {0.0094-0.0184} | SEMI Prime, 1Flat, Empak cst |
| TS073 | N/Sb | [111-3°] ±0.5° | 4" | 525 ±15 | SSP | 0.006-0.020 {0.0094-0.0184} | SEMI Prime, 1Flat, Empak cst (20+20 wafers} |
| TS120 | N/Sb | [111-2.5°] ±0.5° | 4" | 400 ±15 | SSP | 0.005-0.018 {0.0150-0.0174} | SEMI Prime, 1Flat, HBSD, Empak cst, Cassettes of 22 wafers each |
| B786 | N/Sb | [111-4.0°] ±0.5° | 4" | 475 ±15 | SSP | 0.005-0.020 {0.0113-0.0156} | SEMI Prime, 2Flats, Empak cst |
| TS014 | N/Sb | [111-1.5°] ±0.15° | 4" | 525 | SSPOx | 0.005-0.018 {0.0129-0.0161} | SEMI Prime, 2Flats, Back-side: LTO 400nm thick , Empak cst |
| TS015 | N/Sb | [111-1.5°] ±0.15° | 4" | 525 | SSPOx | 0.005-0.018 {0.0129-0.0161} | SEMI Prime, 2Flats, Back-side LTO 400nm, Empak cst |
| TS065 | N/Sb | [111-3°] ±0.2° | 4" | 525 | SSP | 0.005-0.015 {0.0117-0.0143} | SEMI Prime, 2Flats, Empak cst |
| TS066 | N/Sb | [111-3°] ±0.5° | 4" | 525 | SSP | 0.005-0.020 {0.0182-0.0199} | SEMI Prime, 2Flats, Empak cst |
| TS121 | N/As | [111-3°] ±0.5° | 4" | 380 ±15 | SSPOx | 0.004-0.008 {0.0041-0.0044} | SEMI Prime, 2Flats, Back-side LTO (0.75-0.95)μm, TTV<5μm, Cassettes of 22 wafers |
| TS138 | N/As | [111-3°] ±0.5° | 4" | 380 ±15 | SSPOx | 0.004-0.008 {0.0041-0.0044} | SEMI Prime, 2Flats, Back-side LTO (0.75-0.95)μm, TTV<5μm, Cassettes of 22 wafers |
| 5890 | N/As | [111] ±0.5° | 4" | 750 | SSP | 0.004-0.006 | SEMI Prime, 2Flats, Empak cst |
| TS045 | N/As | [111-2.5°] ±0.5° | 4" | 525 | SSPOx | 0.003-0.004 {0.0034-0.0037} | SEMI Prime, 2Flats, TTV<4μm, Back-side: LTO 500nm, Empak cst |
| TS122 | N/As | [111-4°] ±0.5° | 4" | 525 | SSP | 0.002-0.005 {0.0027-0.0033} | SEMI Prime, 2Flats, HBSD, TTV<8μm, Cassettes of 22 wafers |
| TS123 | N/As | [111-4°] ±0.5° | 4" | 525 | SSP | 0.0020-0.0035 {0.0017-0.0030} | SEMI Prime, 2Flats, TTV<8μm, Cassettes of 22 wafers |
| TS110 | N/As | [111-4°] ±0.5° | 4" | 280 ±15 | SSP | 0.001-0.004 | SEMI Prime, 2Flats, Empak (several partial) csts |
| 5740 | N/As | [111-4°] ±0.5° | 4" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted |
| 5741 | N/As | [111-4°] ±0.5° | 4" | 325 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal |
| D741 | N/As | [111-4°] ±0.5° | 4" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers |
| 9239 | N/As | [111-2°] ±0.5° | 4" | 400 | SSPOx | 0.001-0.004 {0.0018-0.0036} | SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst |
| TS039 | N/As | [111-1.5°] ±0.15° | 4" | 525 | SSPOx | 0.001-0.002 {0.00165-0.00198} | SEMI Prime, 2Flats, Back-side LTO 400nm, Empak cst |
| TS080 | N/As | [111-1.5°] ±0.15° | 4" | 525 | SSPOx | 0.001-0.002 {0.00165-0.00198} | SEMI Prime, 2Flats, Back-side LTO 400nm, Empak cst |
| 6432 | N/As | [111-4°] ±0.5° | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| 6774 | N/As | [111] ±0.5° | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| J656 | N/As | [111-4°] | 4" | 525 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| TS030 | N/As | [111-4°] ±0.5° | 4" | 525 | SSP | 0.001-0.005 {0.0036-0.0044} | SEMI Prime, 2Flats, Empak (several partial) csts |
| TS124 | N/As | [111-3.5°] ±0.5° | 4" | 525 | SSP | 0.001-0.005 {0.0039-0.0045} | SEMI Prime, 2Flats, HBSD, Taper<5μm, Empak cst |
| TS051 | N/As | [111-4°] ±1° | 4" | 889 ±15 | SSPOx | 0.001-0.005 {0.0031-0.0033} | SEMI Prime, 2Flats, Back-side: LTO 500nm, Empak cst |
| 3556 | N/As | [111] ±0.5° | 4" | 1,000 | SSP | 0.001-0.005 {0.0031-0.0040} | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm |
76.2mm Degenerately Doped Silicon Wafer (Buy Online) |
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| Item | Typ/Dop | Ori. | Dia. | Thck/(μm) | Polish | Res Ωcm | Specs |
| H173 | P/B | [110] ±0.5° | 3" | 381 | SSP | 0.085-0.115 | SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers |
| 2714 | P/B | [110] ±0.3° | 3" | 381 | SSP | 0.0448-0.0672 | SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst |
| G714 | P/B | [110] ±0.3° | 3" | 381 | SSP | 0.0448-0.0672 | SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, in hard cassettes of 5 wafers |
| E455 | P/B | [110] ±0.5° | 3" | 381 | SSP | 0.003-0.005 | SEMI Prime, Empak cst, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] (109.5±2° CW from Primary) |
| 4394 | P/B | [100] | 3" | 300 | DSP | 0.5-10.0 | SEMI Prime, 1Flat, TTV<2μm, Empak cst |
| S5853 | P/B | [100] | 3" | 315 | DSP | 0.5-10.0 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
| S5610 | P/B | [100] | 3" | 890 ±13 | DSP | 0.5-10.0 | SEMI, Empak cst, TTV<8μm |
| T206 | P/B | [100] | 3" | 3,050 ±50 | C/C | >0.5 | 1Flat, Individual cst (can be ordered singly) |
| 3014 | P/B | [100] | 3" | 250 | SSP | 0.15-0.20 | SEMI TEST (Scratches), 2Flats, in sealed Empak cassettes of 3 wafers |
| J014 | P/B | [100] | 3" | 250 | BROKEN | 0.15-0.20 | Broken wafers, in Epak cst |
| H558 | P/B | [100] | 3" | 356 | DSP | 0.015-0.020 | SEMI, 2Flats, Empak cst |
| S5843 | P/B | [100-4° towards[110]] ±0.5° | 3" | 230 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 2248 | P/B | [100] | 3" | 300 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 4989 | P/B | [100] | 3" | 380 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 5862 | P/B | [100] | 3" | 380 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| G989 | P/B | [100] | 3" | 380 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 5907 | P/B | [100] | 3" | 380 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 7140 | P/B | [100] | 3" | 380 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| S5844 | P/B | [100-4° towards[110]] ±0.5° | 3" | 381 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<5μm, Cassettes of 4 and 20 wafers |
| S5801 | P/B | [100] | 3" | 435 ±10 | E/E | 0.01-0.02 {0.011-0.013} | SEMI, 2Flats, TTV<2μm, coin roll |
| S5795 | P/B | [100] | 3" | 450 ±10 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 6701 | P/B | [100] | 3" | 100 | DSP | 0.0026-0.0030 | SEMI Prime, 2Flats, Empak cst |
| 7056 | P/B | [100] | 3" | 100 | DSP | 0.0026-0.0030 | SEMI Prime, 2Flats, Empak cst |
| TS129 | P/B | [100] | 3" | 381 | SSP | 0.002-0.005 {0.0032-0.0041} | SEMI Prime, 2Flats, TTV<5μm, Empak cst |
| TS130 | P/B | [100] | 3" | 381 | SSP | 0.002-0.005 {0.0037-0.0039} | SEMI Prime, 2Flats, TTV<7μm, Empak cst |
| D414 | P/B | [100] | 3" | 380 | DSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, NOTE: Visible striation marks |
| 6414 | P/B | [100] | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| S5800 | P/B | [111] ±0.5° | 3" | 508 | E/E | 0.792-1.008 | SEMI TEST, 1Flat, TTV<2μm, Epak cst |
| TS052 | P/B | [111] ±1° | 3" | 400 ±19 | SSP | 0.0436-0.0590 {0.0437-0.0446} | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
| H120 | P/B | [111-4°] ±0.5° | 3" | 381 | SSPOx | 0.01-0.02 {0.0145-0.0148} | SEMI Prime, 1Flat, Empak cst |
| 6464 | P/B | [111-4.0° towards[112]] ±0.5° | 3" | 406 | SSP | 0.005-0.015 | SEMI Prime, 1Flat, Empak cst |
| 7157 | P/B | [111] ±0.5° | 3" | 600 | DSP | 0.005-0.020 | SEMI Prime, 1Flat, Empak cst |
| 6722 | P/B | [111-3.5°] | 3" | 300 | SSP | 0.004-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS042 | P/B | [111-3°] ±0.5° | 3" | 381 | SSP | 0.004-0.008 {0.0049-0.0058} | SEMI Prime, 1Flat, Free of Striations, Empak cst |
| S5909 | P/B | [111-4° towards[-211]] ±0.5° | 3" | 890 | SSP | 0.001-0.005 | Test, 2Flats, Soft cst, Can be repolished for additional fee |
| B788 | N/As | [110] ±0.5° | 3" | 420 | DSP | 0.001-0.007 | SEMI Prime, in Empak, Primary Flat @ [1,-1,0] |
| S5580 | N/Ph | [100] ±1° | 3" | 2,286 ±13 | DSP | 15-28 | SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers |
| J763 | N/Sb | [100] | 3" | 300 | SSP | 0.02-0.04 | SEMI Prime, 2Flats, in hard cassettes of 2 wafers |
| 4200 | N/Sb | [100] | 3" | 381 | SSP | 0.008-0.020 {0.013-0.019} | SEMI Prime, 2Flats, Empak cst |
| TS136 | N/As | [100] ±1° | 3" | 381 | SSP | 0.002-0.004 {0.0028-0.0036} | SEMI Prime, 2Flats, TTV<7μm, Empak cst |
| U156 | N/As | [100] | 3" | 300 | SSP | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, Back-side has a non-Prime polish |
| 4096 | N/As | [100] | 3" | 380 | SSPOx | 0.001-0.005 | SEMI Prime, 2Flats, LTO Back-side seal 0.5μm thick, Empak cst |
| 6354 | N/As | [100] | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| TS041 | N/As | [100] | 3" | 889 | SSPOx | 0.001-0.005 {0.0028-0.0037} | SEMI Prime, 2Flats, Back-side: LTO 500nm thick, Empak cst |
| TS079 | N/As | [100] | 3" | 889 | SSPOx | 0.001-0.005 {0.0028-0.0037} | SEMI Prime, 2Flats, Back-side: LTO 500nm thick, Empak cst |
| 1912 | N/As | [211] ±0.5° | 3" | 550 | E/E | 0.0030-0.0042 | SEMI Prime, 1Flat, in Empak cassettes of 7, 8 & 8 wafers |
| TS132 | N/Ph | [111] ±0.5° | 3" | 525 | C/C | 0.5-50.0 {0.89-0.98} | SEMI, 1Flat, Empak cst |
| F136 | N/Ph | [111] ±0.5° | 3" | 1,000 | DSP | 0.5-2.0 | SEMI Prime, 2Flats, Empak cst |
| 2256 | N/Sb | [111] ±0.5° | 3" | 380 | SSP | 0.019-0.026 | SEMI Prime, 2Flats, in Empak cassettes of 5 wafers |
| 4296 | N/Sb | [111] | 3" | 380 | SSP | 0.008-0.025 | SEMI Prime, 2Flats, Empak cst |
| TS024 | N/Sb | [111-3.5°] ±0.5° | 3" | 381 | SSP | 0.008-0.016 {0.0142-0.0155} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| TS131 | N/Sb | [111-3.5°] ±0.5° | 3" | 381 | SSP | 0.008-0.016 {0.0118-0.0133} | SEMI Prime, 2Flats, TTV<6μm, Empak cst |
| S5845 | N/Sb | [111] ±0.5° | 3" | 380 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| TS025 | N/Sb | [111-2.5°] ±0.5° | 3" | 381 | SSP | 0.005-0.016 {0.0125-0.0130} | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS070 | N/Sb | [111-2.5°] ±0.5° | 3" | 381 | SSP | 0.005-0.016 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| TS056 | N/Sb | [111-1.5°] ±0.5° | 3" | 700 | SSP | 0.005-0.018 {0.0154-0.0172} | SEMI Prime, 2Flats, Empak cst (14+15+25+25 wafers) |
| TS022 | N/As | [111-3°] ±0.5° | 3" | 381 | SSP | 0.002-0.004 {0.0025-0.0028} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| TS133 | N/As | [111-3°] ±0.5° | 3" | 381 | SSP | 0.002-0.004 {0.0023-0.0028} | SEMI Prime, 2Flats, Empak cst |
| 6431 | N/As | [111] ±0.5° | 3" | 320 | DSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 6385 | N/As | [111] ±0.5° | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 6530 | N/As | [111] ±0.5° | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<6μm One partial cassette of 18 wafers and 21 wafers |
| E380 | N/As | [111-4°] ±0.5° | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| F385 | N/As | [111-4°] ±0.5° | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| G385 | N/As | [111] ±0.5° | 3" | 380 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| TS023 | N/As | [111-3°] ±0.5° | 3" | 381 | SSP | 0.0010-0.0045 {0.0027-0.0037} | SEMI Prime, 2Flats, Empak cst |
| TS026 | N/As | [111-2.5°] ±0.5° | 3" | 381 | SSP | 0.001-0.005 {0.0030-0.0032} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| TS071 | N/As | [111-2.5°] ±0.5° | 3" | 381 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, TTV<5μm, Bow<10μm, Warp<15μm, Empak cst (6+14 wafers) |
| TS134 | N/As | [111-3°] ±0.5° | 3" | 381 | SSP | 0.001-0.005 {0.0033-0.0035} | SEMI Prime, 2Flats, TTV<6μm, Empak cst |
| TS135 | N/As | [111-3°] ±0.5° | 3" | 381 | SSP | 0.001-0.005 {0.0036-0.0042} | SEMI Prime, 2Flats, Empak cst |
| TS046 | N/As | [111-4°] | 3" | 889 | SSPOx | 0.001-0.004 {0.0032-0.0035} | SEMI Prime, 2Flats, Back-side: LTO 500nm, Empak cst |
| S5858 | N/As | [112-3° towards[111]] ±0.5° | 3" | 890 | SSP | 0.002-0.003 | Prime, 2Flats, Empak cst |
| D158 | N/As | [225] | 3" | 300 | SSP | 0.001-0.003 | SEMI Prime, 1Flat, Empak cst |
| 3185 | P/B | [100] | 3" | 500 | OxDSPOx | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, Both-sides-polished, with Thermal Oxide 1.0μm±5% thick |
50.8mm Degenerately Doped Silicon Wafer (Buy Online) |
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| Item | Typ/Dop | Ori. | Dia. | Thck/(μm) | Polish | Res Ωcm | Specs |
| N610 | P/B | [100] | 2" | 280 | DSP | 0.4-0.6 | SEMI Prime, 2Flats, hard cst |
| 6084 | P/B | [100] | 2" | 275 | SSP | 0.2-0.4 | SEMI Prime, 2Flats, hard cst |
| 6479 | P/B | [100] | 2" | 279 | DSP | 0.08-0.12 | SEMI Prime, 1Flat, hard cst |
| H995 | P/B | [100] | 2" | 300 | SSP | 0.016-0.017 | Prime, NO Flats, hard cst |
| L163 | P/B | [100] | 2" | 250 | DSP | 0.015-0.020 | SEMI Prime, 1Flat, hard cst |
| M163 | P/B | [100] | 2" | 250 | DSP | 0.015-0.020 | SEMI Prime, 1Flat, hard cst |
| T154 | P/B | [100] | 2" | 250 | DSP | 0.015-0.020 | SEMI Prime, 1Flat, hard cst |
| E918 | P/B | [100] | 2" | 280 | DSP | 0.015-0.020 | Prime, NO Flats, hard cst |
| 5918 | P/B | [100] | 2" | 3,000 | SSP | 0.015-0.020 | Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects |
| D570 | P/B | [100] | 2" | 250 | DSP | 0.01-0.02 | SEMI Prime, 1Flat, hard cst, TTV<5μm |
| 3489 | P/B | [100] | 2" | 300 | SSP | 0.01-0.02 | SEMI, 2Flats, hard cst |
| 6077 | P/B | [100] | 2" | 500 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, hard cst |
| 5916 | P/B | [100] | 2" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, hard cst |
| 5959 | P/B | [100] | 2" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, hard cst |
| 7315 | P/B | [100] | 2" | 300 | SSP | 0.001-0.005 | Prime, NO Flats, hard cst |
| B833 | P/B | [100] | 2" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, hard cst |
| H607 | P/B | [100] | 2" | 525 | DSP | <0.01 {0.0076-0.0078} | SEMI Prime, 2Flats, in hard cassettes of 5 wafers. |
| J096 | P/B | [111-10° towards[112]] | 2" | 280 | SSP | 0.5-0.6 | SEMI Prime, 1Flat, hard cst |
| L445 | P/B | [111] ±0.5° | 2" | 275 | DSP | 0.1-0.3 | SEMI Prime, 1Flat, hard cst |
| I096 | P/B | [111] ±0.5° | 2" | 280 | SSP | 0.1-1.0 | SEMI Prime, 1Flat, hard cst |
| J445 | P/B | [111] ±0.5° | 2" | 500 | DSP | 0.1-0.3 | SEMI Prime, 1Flat, hard cst |
| G776 | P/B | [111] | 2" | 1,000 | SSP | 0.001-0.005 | SEMI Prime, 1Flat, hard cst |
| 5533 | P/B | [111] ±0.5° | 2" | 500 | DSP | <0.01 | SEMI Prime, 1Flat, hard cst |
| 5596 | P/B | [111] ±0.5° | 2" | 500 | DSP | <0.01 {0.00087-0.00100} | SEMI Prime, 1Flat, hard cst |
| 7027 | P/Ga | Poly. | 2" | C/C | 0.024-0.036 | Gallium doped Concentrate (each with measured Gallium content) | |
| O763 | N/Sb | [110] | 2" | 375 | SSP | 0.005-0.020 | SEMI, 1Flat, hard cst |
| P763 | N/Sb | [110] | 2" | 375 | SSP | 0.005-0.020 | SEMI, 1Flat, hard cst |
| E858 | N/As | [110] ±0.5° | 2" | 280 | SSP | 0.001-0.005 {0.0048-0.0049} | SEMI Prime, 1Flat, hard cst |
| F858 | N/As | [110] ±0.5° | 2" | 280 | SSP | 0.001-0.005 {0.0048-0.0049} | SEMI Prime, 1Flat, hard cst, cassettes of 10 + 10 wafers |
| J237 | N/Sb | [100] | 2" | 300 | SSP | 0.01-0.02 | SEMI Prime, 2Flats, hard cst |
| D576 | N/Sb | [100] | 2" | 500 | DSP | 0.01-0.02 | SEMI Prime, 2Flats, in hard cassettes of 5 wafers |
| 4501 | N/As | [100] | 2" | 7,050 | SSP | 0.0031-0.0038 | SEMI Prime, 2Flats, Individual cst Group of 2 wafers |
| 6075 | N/As | [100] | 2" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, hard cst |
| 6931 | N/As | [100] | 2" | 300 | SSP | 0.001-0.006 | SEMI Prime, 2Flats, hard cst |
| 7355 | N/As | [100] | 2" | 300 | SSP | 0.001-0.005 | SEMI Prime, 2Flats, hard cst |
| 2039 | N/As | [100] | 2" | 420 ±15 | DSP | 0.001-0.005 {0.0030-0.0034} | SEMI Prime, 2Flats, Empak cst |
| D10 | N/Ph | [111] | 2" | 400 | L/L | 120-170 | Lapped & edged |
| K615 | N/Sb | [111] ±0.5° | 2" | 300 | SSP | 0.05-0.09 | SEMI Prime, 2Flats, hard cst |
| Q962 | N/Sb | [111-3.5°] ±0.5° | 2" | 300 | SSP | 0.05-0.09 | SEMI Prime, 2Flats, in hard cassettes of 5 & 8 wafers |
| 4958 | N/Sb | [111] | 2" | 2,900 | DSP | 0.013-0.015 | Prime, NO Flats, Individual cst, Group of 5 wafers |
| 9358 | N/Sb | [111-2.5°] ±0.5° | 2" | 280 | SSP | 0.012-0.017 | SEMI, 2Flats, hard cst |
| 6529 | N/As | [111] ±0.5° | 2" | 279 | SSP | 0.001-0.005 | SEMI Prime, 1Flat, hard cst |
| 6649 | N/As | [100] | 2" | 380 | OxSSPOx | 0.001-0.005 | SEMI Test, TTV<5μm, 1,000A oxide on both sides, wafers with visible dopant rings. Group of 38 wafers |
25.5mm Degenerately Doped Silicon Wafer (Buy Online) |
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| Item | Typ/Dop | Ori. | Dia. | Thck/(μm) | Polish | Res Ωcm | Specs |
| 5092 | P/B | [100] | 1" | 275 | SSP | 0.015-0.020 | SEMI Prime, 1Flat, Soft cst |
| 6879 | P/B | [100] | 1" | 275 | SSP | 0.0022-0.0025 | Prime, NO Flats, Soft cst |
| 6908 | P/B | [100] | 1" | 250 ±10 | DSP | <0.02 | Prime, NO Flats, Soft cst |