Degenerately Doped Silicon Wafers

university wafer substrates

What is a Degenerately Doped Silicon Wafer?

A PhD student asked the following question:

I am looking for a wafer which have resistivity lower than 1 ohm-cm. In order not to confront an unwanted case in the future, I just want to know what do you mean by "Degenerate Doped Si Wafer" in the description part. Do you want to say the energy difference between Fermi Level and valence band is less than 3kT or do you mean something else?

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UniversityWafer, Inc. Answered:

The concept of a degenerately doped semiconductor is not a precise one. A degenerately doped semiconductor is one that is so heavily doped that it starts acting like a metal. A degenerately doped semiconductor is one with Nc<1E18/cc which corresponds to p-type Ro<0.040 or n-type Ro<0.020. We consider degenerately doped Silicon to have Ro<0.020 Ohmcm. 

Below are some example specs that are degenerately doped Si.

Resitivities of

0.01-0.02 ohm-cm

0.001-0.005 ohm-cm

0.0001-0.0005 ohm-cm

We can also depost thermal oxide, nitride and metals on any degenerately doped silicon wafer in small and large quantities.

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Degenerately Doped Silicon for MEMS Devices

A University researcher requested the following quote:

Our lab is focused on MEMS devices. We usually use silicon and glass wafers for fabricating sensors and actuators.

In our project, we would like to pattern both top and bottom of the wafer and then etch it in a KOH solution up to the full thickness (~500µm) of the wafer. That is why I would like a thick oxide. Another option (which is actually better than just a thick oxide) is to deposit 100 nm or 300 nm LPCVD Nitride in this wafer. Is it possible? If so, what would be the price of 50 wafers (with 300 µm thermal oxide + 100/300 nm LPCVD nitride)?

We are currently looking for low resistivity (0.001-0.005 Ohm.cm) 4" silicon prime wafers, with 1µm of wet thermal oxide on both sides, similar to item 1583 in your catalog. But in our case, we would rather to have a DSP wafers (instead of the SSP of the item 1583). Is it possible to customize this item to our needs? Our idea is to buy up to 50 wafers, depending on the price.

UniversityWafer, Inc. Quoted:

4" P <100> .01-.05 ohm-cm 500+/-25 um DSP wafers with 3000A+/-15 % of thermal oxide on both sides

Please ask for pricing.

 

 

Why Does Degenerately Doped Silicon acts Like a Metal!

A semiconductor that is degenerately doped shows metal-like behavior when heated. This is because the degenerately doped silicon waafers acting like a metaldopants are much heavier than the host atoms, so they can accept an electron from their neighboring atom. This is a degenerate state, so it is not a true metal. However, it can behave like a metal if the doping is high enough.

A semiconductor that is heavily doped is called a degenerately doped semiconductor. When this happens, the material becomes a metal. This is due to the fact that the Nc value is greater than 1E18/cc. This corresponds to a p-type and an n-type. As a result, a semiconductor with this property would be more difficult to work with.

A semiconductor's electrical properties depend on the amount of impurities added. Light, moderate, or high doping is termed an extrinsic semiconductor. In contrast, degenerate silicon is degenerate, which means it acts like a metal. It's also called an activated semiconductor. In the semiconductor industry, this property is used to make transistors.

When the dopants are highly concentrated, the conductivity increases. More carriers are available to conduct, which makes degenerate semiconductors more commonly used in integrated circuits. To determine the level of doping in a semiconductor, superscript plus and minus symbols are used. The former signifies an n-type semiconductor with high doping, while the latter indicates a heavily doped p-type material. While degenerately doped semiconductors have higher conductivity than intrinsic crystalline silicon, they do not have as much energy.

PHD Candiate asks:

Yes, I am looking for a wafer which have resistivity lower than 1 ohm-cm. In order not to confront an unwanted case in the future, I just want to know what do you mean by "Degenerate Doped Si Wafer" in the description part. Do you want to say the energy difference between Fermi Level and valence band is less than 3kT or do you mean something else? I am looking forward to your reply. Thank you. 

Our Engineer's Reply:

Yes, though the concept of a degenerately doped semiconductor is not a precise one. A degenerately doped semiconductor is one that is so heavily doped that it starts acting like a metal. A degenerately doped semiconductor is one with Nc<1E18/cc which corresponds to p-type Ro<0.040 or n-type Ro<0.020. We consider degenerately doped Silicon to have Ro<0.020 Ohmcm. 

The following wafer item was purchased:

Si Wafer Item #785
100mm P/B <100> 0.001-0.005 ohm-cm 525um SSP Prime Grade

Below are just some of the degerately doped silicon that we have in stock:

150mm Degenerately Doped Silicon Wafer (Buy Online)

Item

Typ/Dop

Ori.

Dia.

Thck/(μm)

Polish

Res Ωcm
SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Non-standard Edge profile, Oxygen=(11-13)ppma, Carbon<1ppma, Empak cst
TS006 P/B [100] 6" 525 ±15 SSP MCZ 0.01-0.02 {0.015-0.017}
SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Oxygen=(3-9)ppma, Carbon<1ppma, Back-side: Acid etch, Empak cst
TS004 P/B [100] 6" 675 ±15 SSP MCZ 0.01-0.02 {0.013-0.017}
SEMI Prime, 1Flat 57.5mm @ <001>±0.5° {not @ <011>}, Oxygen=(3-9)ppma, Carbon<1ppma, Back-side: Acid etch, Empak cst
TS005 P/B [100] 6" 675 ±15 SSP MCZ 0.01-0.02 {0.013-0.016}
SEMI Prime, JEIDA Flat 47.5mm, Back-side LTO (0.3-0.4)μm, TTV<6μm, Empak cst
TS104 P/B [100] 6" 625 ±15 SSPOx 0.01-0.02 {0.0139-0.0144}
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
F253 P/B [100] 6" 1,500 DSP 0.01-0.02
SEMI, 1Flat (57.5mm), Empak cst
7258 P/B [100] 6" 650 DSP 0.001-0.005
L066 N/Sb [100] 6" 675 SSP 0.01-0.02
C673 N/Sb [100] 6" 675 SSP 0.008-0.020
TS037 N/Ph [111-1.5°] ±0.5° 6" 675 SSP 3-12 {5.0-8.8}
TS037 N/Ph [111-1.5°] ±0.5° 6" 675 SSP 3-12 {5.0-8.8}
6484 P/B [100] 6" 675 SSP 0.001-0.005
SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst
TS109 N/As [111-4°] ±0.5° 6" 508 ±15 SSP 0.0023-0.0026
TS109 N/As [111-4°] ±0.5° 6" 508 ±15 SSP 0.0023-0.0026
TS108 P/B [111-3°] ±0.5° 6" 625 ±15 SSP 0.01-0.02
SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm
J668 P/B [111] ±0.5° 6" 675 E/E 0.010-0.025
SEMI Prime, 1Flat (57.5mm), Back-side LTO 400±40nm, TTV<6μm, Empak cst
TS105 P/B [111-1.5°] ±0.35° 6" 675 SSPOx 0.001-0.002 {0.0017-0.0018}
SEMI, 1Flat(57.5mm), in individual wafer cassettes
2533 N/As [100] 6" 1,000 L/L 0.0033-0.0037
E533 N/As [100] 6" 1,000 L/L 0.0033-0.0037
SEMI Prime, 2Flats (PF @ <110>±1°, SF 135° from PF}, Laser Mark, Empak cst
TS018 N/As [100] 6" 575 ±15 DSP 0.001-0.005 {0.0040-0.0041}
SEMI Prime, 1Flat (57.5mm), Empak cst, Back-side LTO (0.64-0.666)um, TTV<4μm, Bow/Warp<20μm
4204 N/As [100] 6" 675 SSPOx 0.001-0.005  
SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32-0.46)Ohmcm, 3.20±0.16μm thick, Empak cst
5541 N/Ph [100] 6" 675 SSPOx 0.001-0.002
SEMI Prime, 1Flat (57.5mm), TTV<5μm, LTO (0.3-0.6)μm, Empak cst
TS101 N/As [100] 6" 675 ±15 SSPOx 0.001-0.005 {0.0036-0.0041}  
TS037 N/Ph [111-1.5°] ±0.5° 6" 675 SSP 3-12 {5.0-8.8} SEMI Prime, 1Flat (57.5mm), Empak cst
6559 N/Ph [111] ±0.5° 6" 675 SSP 1-100 Prime, NO Flats, Empak cst
TS112 N/As [111-4°] ±0.5° 6" 508 SSP 0.0038-0.0042 SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst
TS034 N/As [111-4°] ±0.25° 6" 625 ±15 SSPOx 0.0024-0.0035 {0.0029-0.0030} SEMI Prime, 1Flat (57.5mm), Back-side: LTO 600nm thick, Empak cst
TS109 N/As [111-4°] ±0.5° 6" 508 ±15 SSP 0.0023-0.0026 SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
TS102 N/As [111-4°] ±0.5° 6" 675 SSP 0.001-0.005  
SEMI Prime, JEIDA Flat (47.5mm), Back-side LTO (0.45-0.55)μm, TTV<6μm, Empak cst
TS107 N/As [111-2.5°] ±0.5° 6" 625 ±15 SSPOx 0.001-0.004 {0.0021-0.0036}  
SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst
1660 N/As [100] 6" 675 OxSSPOx 0.001-0.005  

125mm Degenerately Doped Silicon Wafer
Item Typ/Dop Ori. Dia. Thck/(μm) Polish Res Ωcm Specs
9228 P/B [100] 5" 525 SSPOx 0.002-0.004 {0.0031-0.0035} SEMI Prime, 1Flat, Free of Striations, TTV<5μm, Back-Side LTO seal 0.50±0.05μm thick, in Empak csts (7+7) wafers
X7134 N/As [100] 5"   E/E 0.001-0.005 SEMI Test, 1Flat, in opened Empak cst
TS003 N/As [100-1°] ±0.25° 5" 375 SSPOx 0.0010-0.0035 {0.0029-0.0032} SEMI, 1Flat, HBSD+LTO 800nm, Empak cst
6985 N/As [100] 5" 625 SSP 0.001-0.007 SEMI TEST, 2Flats, Empak cst
X7167 N/Sb [100] 5" 740 E/E   SEMI 2Flats (2nd @135°), in opened Empak cst, 125.63mm diameter
B862 N/Sb [111-3.0°] ±0.5° 5" 625 SSP 0.015-0.020 {0.0152-0.0185} SEMI Prime, 2Flats, Empak cst
TS106 N/Sb [111-4°] ±0.5° 5" 525 SSPOx 0.008-0.020 {0.0160-0.0168} SEMI Prime, 1Flat, Back-side LTO (0.45-0.55)μm, TTV<8μm, Empak cst, Cassettes of 25 + 10 + 10 wafers
6664 N/Sb [111-3.5°] ±1.0° 5" 375 ±15 SSP 0.005-0.020 SEMI Prime, 2Flats, Empak cst
TS060 N/Ph [111-4°] ±0.5° 5" 433 SSPOx 0.001-0.002 {0.0014-0.0017} SEMI Prime, 1Flat, Back-side: LTO 850nm, Free of Striations, Empak cst
7188 N/As [111] 5" 625 E/E 0.001-0.005 1Flat, Empak cst
6683 P/B [111-3.5°] ±1.0° 5" 375 ±15 OxSSPOx 0.012-0.018 Prime, 1Flat, Empak cst
E683 P/B [111-3.5°] ±1.0° 5" 375 ±15 OxSSPOx 0.012-0.018 Prime, 1Flat, Empak cst
D925 N/As [100] 5" 625 OxSSPOx 0.001-0.007 SEMI Prime, 2Flats, Thermal Oxide 3.5±0.5μm thick, Empak cst

100mm Degenerately Doped Silicon Wafer (Buy Online)
Item Typ/Dop Ori. Dia. Thck/(μm) Polish Res Ωcm Specs
I046 P/B [100] 4" 250 DSP 0.1-0.5 SEMI Prime, 2Flats, Empak cst
6854 P/B [100] 4" 525 SSP 0.1-0.2 SEMI Prime, 2Flats, Empak cst
E654 P/B [100] 4" 320 DSP 0.08-0.12 SEMI Test, 2Flats, Empak cst, TTV<2μm, SURFACE DEFECTS
7010 P/B [100] 4" 250 DSP 0.025-0.035 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Diameter 100.0±0.2mm
6881 P/B [100] 4" 500 DSP 0.025-0.035 SEMI Prime, 1Flat, Empak cst, TTV<5μm
3031 P/B [100-6° towards[110]] ±0.5° 4" 525 SSP 0.015-0.020 SEMI Prime, 2Flats, Empak cst
X090 P/B [100] 4" 300 ±7 DSP 0.014-0.021 Prime, 2Flats, Empak cst, TTV<1μm
7089 P/B [100] 4" 381 ±7 DSP 0.014-0.021 SEMI Prime, 2Flats, TTV<1μm, Empak cst.
7340 P/B [100] 4" 250 DSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
F966 P/B [100] 4" 250 DSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
S5896 P/B [100] ±1° 4" 300 DSP 0.01-0.05 SEMI Prime, Empak cst, TTV<2μm
5833 P/B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
6349 P/B [100] 4" 525 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm
M066 P/B [100] 4" 525 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm
7085 P/B [100] 4" 800 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
TS021 P/B [100] 4" 525 SSPOx 0.009-0.015 {0.0123-0.0140} SEMI Prime, 2Flats, Back-side: LTO 400nm, Free of Striations, Empak cst
T155 P/B [100] 4" 525 DSPOx 0.008-0.020 SEMI Prime, 2Flats, Empak cst
6952 P/B [100] 4" 3,100 DSP 0.006-0.009 SEMI Prime, 2Flats, Individual cst, Group of 4 wafers
5419 P/B [100] 4" 300 DSP 0.001-0.005 SEMI Test, 2Flats, Empak cst, Both sides with scratches
L419 P/B [100] 4" 300 DSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst
6919 P/B [100] 4" 300 SSP 0.001-0.010 SEMI Prime, 2Flats, Empak cst
D919 P/B [100] 4" 300 SSP 0.001-0.010 SEMI TEST - scratches, in unsealed cst, 2Flats, Lasermark, Empak cst
I135 P/B [100] 4" 500 DSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
7282 P/B [100] 4" 525 DSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Free of striation marks
6719 P/B [100] 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6900 P/B [100] 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
7383 P/B [100] 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
I383 P/B [100] 4" 525 SSP 0.001-0.002 SEMI Prime, 2Flats, Empak cst, TTV<5μm
K173 P/B [100] 4" 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces), 1Flat
5420 P/B [100] 4" 800 C/C 0.001-0.005 SEMI, 2Flats, Empak cst, With striation marks
G134 P/B [100] 4" 1,000 ±50 DSP 0.001-0.005 Prime, NO Flats, Empak cst
L135 P/B [100] 4" 2,000 ±50 DSP 0.001-0.003 Prime, NO Flats, Individual cst
D372 P/B [111-3°] 4" 400 SSP 0.015-0.018 SEMI Prime, 1Flat, Empak cst
TS008 P/B [111] ±1° 4" 380 ±10 SSP 0.010-0.015 {0.0124-0.0136} SEMI Prime, 1Flat, Empak cst, TTV<8μm
TS117 P/B [111-3°] ±0.5° 4" 381 ±15 SSPOx 0.01-0.02 {0.0168-0.0172} SEMI Prime, 1Flat, Back-side LTO (0.8-0.9)μm, TTV<5μm Cassettes of 22 wafers
4279 P/B [111-4°] ±0.5° 4" 525 SSP 0.01-0.02 SEMI Prime, 1Flat, Empak cst
F508 P/B [111] ±0.5° 4" 525 SSP 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<3μm, Bow<10μm, Warp<30μm
G508 P/B [111] ±0.5° 4" 525 SSP 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<3μm, Bow<10μm, Warp<30μm
TS033 P/B [111-4°] ±0.5° 4" 525 SSP 0.01-0.02 {0.0140-0.0186} SEMI Prime, 1Flat, Back-side: Hard-Damage, Empak cst
TS077 P/B [111-4°] ±0.5° 4" 525 SSP 0.01-0.02 {0.0140-0.0186} SEMI Prime, 1Flat, Empak cst (4+5+5+10+15+20 wafers)
TS114 P/B [111-3.5°] ±0.5° 4" 525 SSP 0.01-0.02 {0.0132-0.0136} SEMI Prime, 1Flat, TTV<5μm, Empak cst, Cassettes of 22 + 19
TS115 P/B [111-3°] ±0.5° 4" 525 ±15 SSP 0.01-0.02 {0.0165-0.0169} SEMI Prime, 1Flat, TTV<5μm, Lasermarked, Cassettes of 21 + 13 wafers
TS116 P/B [111-3°] ±0.5° 4" 525 ±15 SSP 0.01-0.02 {0.0158-0.0168} SEMI Prime, 1Flat, TTV<5μm, Empak cst, Cassettes of 22 wafers
TS038 P/B [111-3.5°] ±0.5° 4" 525 ±15 SSP 0.007-0.009 {0.0071-0.0085} SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS069 P/B [111-3.5°] ±0.5° 4" 525 ±15 SSP 0.007-0.009 {0.0071-0.0085} SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS031 P/B [111-3.5°] ±1° 4" 475 SSP 0.005-0.020 {0.0138-0.0150} SEMI Prime, 1Flat, Back-side Acid Etch, Empak cst
C228 P/B [111-4°] ±0.5° 4" 525 ±15 SSPOx 0.005-0.015 {0.0086-0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back-side
TS032 P/B [111-3.5°] ±0.5° 4" 525 SSP 0.004-0.008 {0.0059-0.0071} SEMI Prime, 1Flat, Free of Striations, Empak cst (7+19+22+3×25 wafers)
TS113 P/B [111-3.5°] ±0.5° 4" 525 SSP 0.004-0.008 {0.0054-0.0067} SEMI Prime, 1Flat, TTV<6μm, Empak cst, Cassettes of 22 wafers
TS016 P/B [111] ±1° 4" 350 ±10 DSP 0.002-0.005 {0.0039-0.0042} SEMI Prime, 1Flat, Free of Striations, Empak cst
1223 P/B [111-3°] ±0.5° 4" 525 SSP 0.002-0.016 SEMI Prime, 1Flat, in Empak cassettes of 4 & 5 wafers
D858 P/B [111-3°] 4" 525 SSP 0.002-0.004 SEMI Prime, 1Flat, Empak cst
E389 P/B [111] ±0.5° 4" 300 DSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, With Lasermark, With striation marks
TS049 P/B [111-3.5°] ±1° 4" 300 ±15 SSP 0.001-0.002 {0.0018-0.0019} Prime, 1Flat, TTV<5μm, Free of Striations, Empak cst
7284 P/B [111] ±0.5° 4" 525 SSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS009 P/B [111-3°] ±0.5° 4" 750 SSP 0.001-0.005 {0.0035-0.0042} SEMI Prime, 1Flat, Edge profile: R type, Empak cst, cassettes of 7 + 12 wafers
D599 P/B [111] ±0.5° 4" 1,000 DSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst
F022 P/B [111] ±0.3° 4" 350 ±5 DSP <0.05 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow/Wrp<15μm
4949 P/B [111] ±0.5° 4" 1,000 SSP <0.01 SEMI Prime, 1Flat, Empak cst
4024 N/As [110] ±0.5° 4" 275 DSP 0.001-0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst
4293 N/As [110] ±0.5° 4" 275 ±10 DSP 0.001-0.005 SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst, TTV<5μm
E024 N/As [110] ±0.5° 4" 275 ±10 DSP 0.001-0.005 SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst
L808 N/As [110] ±0.5° 4" 500 DSP 0.001-0.005 SEMI Prime, 1Flat @ [111], Empak cst
H562 N/As [110] ±0.5° 4" 525 SSP 0.001-0.005 Prime, 1Flat @ <1,-1,0>, Empak cst
6562 N/As [110] ±0.5° 4" 525 E/E 0.001-0.005 SEMI Prime, 1Flat @ <1,-1,0>, Empak cst
6535 N/Ph [100] 4" 525 SSP 0.3-0.5 SEMI, 2Flats, Empak cst
E134 N/Ph [100] 4" 275 DSP 0.10-0.15 SEMI Test, 2Flats, Empak cst, Both sides with scratches
7017 N/Sb [100] 4" 450 SSP ~0.03 SEMI Prime, 1Flat, Empak cst, Cassettes of 1 + 3 wafers
H304 N/Sb [100] 4" 525 SSP 0.020-0.022 Prime, 2Flats, Empak cst
E031 N/Sb [100-6° towards[110]] ±0.5° 4" 525 SSP 0.015-0.020 SEMI Prime, 2Flats, Empak cst
K932 N/Sb [100] 4" 275 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
TS126 N/Sb [100] ±1° 4" 300 SSP 0.01-0.02 {0.0143-0.0156} SEMI Prime, 2Flats, Empak cst
B905 N/Sb [100] 4" 310 ±15 DSP 0.010-0.025 SEMI Test, 2Flats, TTV<5μm, Light defects on back side, Empak cst
TS027 N/Sb [100-2.5°] ±0.5° 4" 380 ±10 DSPOx 0.01-0.02 {0.0119-0.0131} SEMI Prime, 2Flats, Empak cst, TTV<5μm, Back-side LTO 5,000A
TS028 N/Sb [100-2.5°] ±0.5° 4" 500 ±10 DSP 0.01-0.02 {0.0144-0.0148} SEMI Prime, 2Flats, Empak cst, TTV<5μm
TS125 N/Sb [100] 4" 525 SSPOx 0.01-0.02 {0.0149-0.0156} SEMI Prime, 2Flats, Back-side LTO (0.45-0.55)μm, TTV<7μm, Cassettes of 22 wafers
6790 N/Sb [100] 4" 525 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F138 N/Sb [100] 4" 525 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
TS040 N/Sb [100] ±1° 4" 525 SSPOx 0.005-0.020 {0.0161-0.0182} SEMI Prime, 2Flats, Back-Side: LTO 400nm, TTV<5μm, Bow<5μm, Warp<10μm, Empak cst.
TS044 N/Sb [100] 4" 525 SSP 0.005-0.020 {0.0133-0.0155} SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS127 N/As [100] ±1° 4" 360 ±15 DSP 0.004-0.008 {0.0054-0.0067} SEMI Prime, 2Flats, TTV<5μm, Cassettes of 22 + 21 + 19 wafers
6304 N/As [100] 4" 525 SSP 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
S5889 N/As [100] 4" 440 ±10 DSP 0.002-0.004 SEMI Test, 1Flat, Empak cst, TTV<1μm, Non-Prime wafers, cannot be reworked
TS128 N/As [100] 4" 525 SSP 0.002-0.005 {0.0026-0.0030} SEMI Prime, 2Flats, TTV<7μm, Empak cst, Cassettes of 22 wafers
U671 N/As [100] 4" 545 E/E 0.002-0.004 SEMI, 1Flat, Empak cst
6403 N/As [100] 4" 525 DSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6401 N/As [100] 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F219 N/As [100] 4" 525 SSP 0.001-0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
TS062 N/As [100] 4" 525 SSP 0.001-0.005 {0.0029-0.0037} SEMI Prime, 2Flats, Empak cst, TTV<7μm, Bow<20μm, Warp<25μm
F562 N/As [100] 4" 525 PlyASSP 0.001-0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
[More Info]
E720 N/As [100] 4" 550 ±10 DSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst
7347 N/As [100] 4" 300 SSP <0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
4975 N/Sb [211] ±0.5° 4" 1,500 ±15 DSP 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
F975 N/Sb [211] ±0.5° 4" 1,600 C/C 0.01-0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
S5810 N/Ph [111] ±1.0° 4" 525 SSP 0.3-50.0 SEMI Prime, 2Flats, Empak cst
S5840 N/Ph [111] ±1.0° 4" 565 ±10 E/E 0.3-50.0 SEMI Prime, Empak cst
TS067 N/Sb [111-4°] ±0.5° 4" 457 SSP 0.02-0.05 {0.0204-0.0342} SEMI Prime, 2Flats, Empak cst
TS078 N/Sb [111-4°] ±0.5° 4" 457 SSP 0.02-0.05 {0.0204-0.0342} SEMI Prime, 2Flats, Empak cst
7360 N/Sb [111] 4" 525 SSP 0.0113-0.0118 Prime, 2Flats, Empak cst
TS029 N/Sb [111-3°] ±0.5° 4" 381 ±15 SSP 0.01-0.02 {0.014-0.018} SEMI Prime, 2Flats, Back-side: Acid etch, Laser Mark, Empak cst (3+22+5×25 wafers)
6433 N/Sb [111-0.5° towards[-1,-1,2]] ±0.1° 4" 525 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
TS118 N/Sb [111-4°] ±0.5° 4" 381 SSP 0.008-0.020 {0.0116-0.0194} SEMI Prime, 2Flats, HBSD, Empak cst, Cassettes of 22 wafers
TS119 N/Sb [111-4°] ±0.5° 4" 381 SSP 0.008-0.020 {0.0108-0.0141} SEMI Prime, 2Flats, HBSD, Cassettes of 7 + 3 wafers
TS139 N/Sb [111-4°] ±0.5° 4" 381 SSP 0.008-0.020 SEMI Prime, 2Flats, HBSD, Empak cst, Cassettes of 5 + 15 wafers
9544 N/Sb [111-4°] ±0.5° 4" 420 SSPOx 0.008-0.018 {0.0138-0.0151} SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal
TS020 N/Sb [111-4°] ±0.5° 4" 490 SSP 0.007-0.020 {0.016-0.017} SEMI Prime, 2Flats, Empak cst
TS064 N/Sb [111-4°] ±0.5° 4" 525 SSP 0.007-0.020 {0.0157-0.0171} SEMI Prime, 2Flats, Empak cst
TS068 N/Sb [111-3°] ±0.5° 4" 525 ±15 SSP 0.006-0.020 {0.0094-0.0184} SEMI Prime, 1Flat, Empak cst
TS073 N/Sb [111-3°] ±0.5° 4" 525 ±15 SSP 0.006-0.020 {0.0094-0.0184} SEMI Prime, 1Flat, Empak cst (20+20 wafers}
TS120 N/Sb [111-2.5°] ±0.5° 4" 400 ±15 SSP 0.005-0.018 {0.0150-0.0174} SEMI Prime, 1Flat, HBSD, Empak cst, Cassettes of 22 wafers each
B786 N/Sb [111-4.0°] ±0.5° 4" 475 ±15 SSP 0.005-0.020 {0.0113-0.0156} SEMI Prime, 2Flats, Empak cst
TS014 N/Sb [111-1.5°] ±0.15° 4" 525 SSPOx 0.005-0.018 {0.0129-0.0161} SEMI Prime, 2Flats, Back-side: LTO 400nm thick , Empak cst
TS015 N/Sb [111-1.5°] ±0.15° 4" 525 SSPOx 0.005-0.018 {0.0129-0.0161} SEMI Prime, 2Flats, Back-side LTO 400nm, Empak cst
TS065 N/Sb [111-3°] ±0.2° 4" 525 SSP 0.005-0.015 {0.0117-0.0143} SEMI Prime, 2Flats, Empak cst
TS066 N/Sb [111-3°] ±0.5° 4" 525 SSP 0.005-0.020 {0.0182-0.0199} SEMI Prime, 2Flats, Empak cst
TS121 N/As [111-3°] ±0.5° 4" 380 ±15 SSPOx 0.004-0.008 {0.0041-0.0044} SEMI Prime, 2Flats, Back-side LTO (0.75-0.95)μm, TTV<5μm, Cassettes of 22 wafers
TS138 N/As [111-3°] ±0.5° 4" 380 ±15 SSPOx 0.004-0.008 {0.0041-0.0044} SEMI Prime, 2Flats, Back-side LTO (0.75-0.95)μm, TTV<5μm, Cassettes of 22 wafers
5890 N/As [111] ±0.5° 4" 750 SSP 0.004-0.006 SEMI Prime, 2Flats, Empak cst
TS045 N/As [111-2.5°] ±0.5° 4" 525 SSPOx 0.003-0.004 {0.0034-0.0037} SEMI Prime, 2Flats, TTV<4μm, Back-side: LTO 500nm, Empak cst
TS122 N/As [111-4°] ±0.5° 4" 525 SSP 0.002-0.005 {0.0027-0.0033} SEMI Prime, 2Flats, HBSD, TTV<8μm, Cassettes of 22 wafers
TS123 N/As [111-4°] ±0.5° 4" 525 SSP 0.0020-0.0035 {0.0017-0.0030} SEMI Prime, 2Flats, TTV<8μm, Cassettes of 22 wafers
TS110 N/As [111-4°] ±0.5° 4" 280 ±15 SSP 0.001-0.004 SEMI Prime, 2Flats, Empak (several partial) csts
5740 N/As [111-4°] ±0.5° 4" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted
5741 N/As [111-4°] ±0.5° 4" 325 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal
D741 N/As [111-4°] ±0.5° 4" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
9239 N/As [111-2°] ±0.5° 4" 400 SSPOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst
TS039 N/As [111-1.5°] ±0.15° 4" 525 SSPOx 0.001-0.002 {0.00165-0.00198} SEMI Prime, 2Flats, Back-side LTO 400nm, Empak cst
TS080 N/As [111-1.5°] ±0.15° 4" 525 SSPOx 0.001-0.002 {0.00165-0.00198} SEMI Prime, 2Flats, Back-side LTO 400nm, Empak cst
6432 N/As [111-4°] ±0.5° 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst
6774 N/As [111] ±0.5° 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
J656 N/As [111-4°] 4" 525 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst
TS030 N/As [111-4°] ±0.5° 4" 525 SSP 0.001-0.005 {0.0036-0.0044} SEMI Prime, 2Flats, Empak (several partial) csts
TS124 N/As [111-3.5°] ±0.5° 4" 525 SSP 0.001-0.005 {0.0039-0.0045} SEMI Prime, 2Flats, HBSD, Taper<5μm, Empak cst
TS051 N/As [111-4°] ±1° 4" 889 ±15 SSPOx 0.001-0.005 {0.0031-0.0033} SEMI Prime, 2Flats, Back-side: LTO 500nm, Empak cst
3556 N/As [111] ±0.5° 4" 1,000 SSP 0.001-0.005 {0.0031-0.0040} SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm

76.2mm Degenerately Doped Silicon Wafer (Buy Online)
Item Typ/Dop Ori. Dia. Thck/(μm) Polish Res Ωcm Specs
H173 P/B [110] ±0.5° 3" 381 SSP 0.085-0.115 SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
2714 P/B [110] ±0.3° 3" 381 SSP 0.0448-0.0672 SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
G714 P/B [110] ±0.3° 3" 381 SSP 0.0448-0.0672 SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, in hard cassettes of 5 wafers
E455 P/B [110] ±0.5° 3" 381 SSP 0.003-0.005 SEMI Prime, Empak cst, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] (109.5±2° CW from Primary)
4394 P/B [100] 3" 300 DSP 0.5-10.0 SEMI Prime, 1Flat, TTV<2μm, Empak cst
S5853 P/B [100] 3" 315 DSP 0.5-10.0 SEMI Prime, 1Flat, Empak cst, TTV<3μm
S5610 P/B [100] 3" 890 ±13 DSP 0.5-10.0 SEMI, Empak cst, TTV<8μm
T206 P/B [100] 3" 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly)
3014 P/B [100] 3" 250 SSP 0.15-0.20 SEMI TEST (Scratches), 2Flats, in sealed Empak cassettes of 3 wafers
J014 P/B [100] 3" 250 BROKEN 0.15-0.20 Broken wafers, in Epak cst
H558 P/B [100] 3" 356 DSP 0.015-0.020 SEMI, 2Flats, Empak cst
S5843 P/B [100-4° towards[110]] ±0.5° 3" 230 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm
2248 P/B [100] 3" 300 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
4989 P/B [100] 3" 380 DSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
5862 P/B [100] 3" 380 DSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
G989 P/B [100] 3" 380 DSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
5907 P/B [100] 3" 380 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
7140 P/B [100] 3" 380 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
S5844 P/B [100-4° towards[110]] ±0.5° 3" 381 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm, Cassettes of 4 and 20 wafers
S5801 P/B [100] 3" 435 ±10 E/E 0.01-0.02 {0.011-0.013} SEMI, 2Flats, TTV<2μm, coin roll
S5795 P/B [100] 3" 450 ±10 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
6701 P/B [100] 3" 100 DSP 0.0026-0.0030 SEMI Prime, 2Flats, Empak cst
7056 P/B [100] 3" 100 DSP 0.0026-0.0030 SEMI Prime, 2Flats, Empak cst
TS129 P/B [100] 3" 381 SSP 0.002-0.005 {0.0032-0.0041} SEMI Prime, 2Flats, TTV<5μm, Empak cst
TS130 P/B [100] 3" 381 SSP 0.002-0.005 {0.0037-0.0039} SEMI Prime, 2Flats, TTV<7μm, Empak cst
D414 P/B [100] 3" 380 DSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, NOTE: Visible striation marks
6414 P/B [100] 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst
S5800 P/B [111] ±0.5° 3" 508 E/E 0.792-1.008 SEMI TEST, 1Flat, TTV<2μm, Epak cst
TS052 P/B [111] ±1° 3" 400 ±19 SSP 0.0436-0.0590 {0.0437-0.0446} SEMI Prime, 1Flat, Empak cst, TTV<3μm
H120 P/B [111-4°] ±0.5° 3" 381 SSPOx 0.01-0.02 {0.0145-0.0148} SEMI Prime, 1Flat, Empak cst
6464 P/B [111-4.0° towards[112]] ±0.5° 3" 406 SSP 0.005-0.015 SEMI Prime, 1Flat, Empak cst
7157 P/B [111] ±0.5° 3" 600 DSP 0.005-0.020 SEMI Prime, 1Flat, Empak cst
6722 P/B [111-3.5°] 3" 300 SSP 0.004-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS042 P/B [111-3°] ±0.5° 3" 381 SSP 0.004-0.008 {0.0049-0.0058} SEMI Prime, 1Flat, Free of Striations, Empak cst
S5909 P/B [111-4° towards[-211]] ±0.5° 3" 890 SSP 0.001-0.005 Test, 2Flats, Soft cst, Can be repolished for additional fee
B788 N/As [110] ±0.5° 3" 420 DSP 0.001-0.007 SEMI Prime, in Empak, Primary Flat @ [1,-1,0]
S5580 N/Ph [100] ±1° 3" 2,286 ±13 DSP 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
J763 N/Sb [100] 3" 300 SSP 0.02-0.04 SEMI Prime, 2Flats, in hard cassettes of 2 wafers
4200 N/Sb [100] 3" 381 SSP 0.008-0.020 {0.013-0.019} SEMI Prime, 2Flats, Empak cst
TS136 N/As [100] ±1° 3" 381 SSP 0.002-0.004 {0.0028-0.0036} SEMI Prime, 2Flats, TTV<7μm, Empak cst
U156 N/As [100] 3" 300 SSP 0.001-0.005 SEMI Prime, 1Flat, Empak cst, Back-side has a non-Prime polish
4096 N/As [100] 3" 380 SSPOx 0.001-0.005 SEMI Prime, 2Flats, LTO Back-side seal 0.5μm thick, Empak cst
6354 N/As [100] 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
TS041 N/As [100] 3" 889 SSPOx 0.001-0.005 {0.0028-0.0037} SEMI Prime, 2Flats, Back-side: LTO 500nm thick, Empak cst
TS079 N/As [100] 3" 889 SSPOx 0.001-0.005 {0.0028-0.0037} SEMI Prime, 2Flats, Back-side: LTO 500nm thick, Empak cst
1912 N/As [211] ±0.5° 3" 550 E/E 0.0030-0.0042 SEMI Prime, 1Flat, in Empak cassettes of 7, 8 & 8 wafers
TS132 N/Ph [111] ±0.5° 3" 525 C/C 0.5-50.0 {0.89-0.98} SEMI, 1Flat, Empak cst
F136 N/Ph [111] ±0.5° 3" 1,000 DSP 0.5-2.0 SEMI Prime, 2Flats, Empak cst
2256 N/Sb [111] ±0.5° 3" 380 SSP 0.019-0.026 SEMI Prime, 2Flats, in Empak cassettes of 5 wafers
4296 N/Sb [111] 3" 380 SSP 0.008-0.025 SEMI Prime, 2Flats, Empak cst
TS024 N/Sb [111-3.5°] ±0.5° 3" 381 SSP 0.008-0.016 {0.0142-0.0155} SEMI Prime, 2Flats, Empak cst, TTV<5μm
TS131 N/Sb [111-3.5°] ±0.5° 3" 381 SSP 0.008-0.016 {0.0118-0.0133} SEMI Prime, 2Flats, TTV<6μm, Empak cst
S5845 N/Sb [111] ±0.5° 3" 380 SSP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
TS025 N/Sb [111-2.5°] ±0.5° 3" 381 SSP 0.005-0.016 {0.0125-0.0130} SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS070 N/Sb [111-2.5°] ±0.5° 3" 381 SSP 0.005-0.016 SEMI Prime, 1Flat, Empak cst, TTV<5μm
TS056 N/Sb [111-1.5°] ±0.5° 3" 700 SSP 0.005-0.018 {0.0154-0.0172} SEMI Prime, 2Flats, Empak cst (14+15+25+25 wafers)
TS022 N/As [111-3°] ±0.5° 3" 381 SSP 0.002-0.004 {0.0025-0.0028} SEMI Prime, 2Flats, Empak cst, TTV<5μm
TS133 N/As [111-3°] ±0.5° 3" 381 SSP 0.002-0.004 {0.0023-0.0028} SEMI Prime, 2Flats, Empak cst
6431 N/As [111] ±0.5° 3" 320 DSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6385 N/As [111] ±0.5° 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6530 N/As [111] ±0.5° 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<6μm One partial cassette of 18 wafers and 21 wafers
E380 N/As [111-4°] ±0.5° 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst
F385 N/As [111-4°] ±0.5° 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
G385 N/As [111] ±0.5° 3" 380 SSP 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<5μm
TS023 N/As [111-3°] ±0.5° 3" 381 SSP 0.0010-0.0045 {0.0027-0.0037} SEMI Prime, 2Flats, Empak cst
TS026 N/As [111-2.5°] ±0.5° 3" 381 SSP 0.001-0.005 {0.0030-0.0032} SEMI Prime, 2Flats, Empak cst, TTV<5μm
TS071 N/As [111-2.5°] ±0.5° 3" 381 SSP 0.001-0.005 SEMI Prime, 2Flats, TTV<5μm, Bow<10μm, Warp<15μm, Empak cst (6+14 wafers)
TS134 N/As [111-3°] ±0.5° 3" 381 SSP 0.001-0.005 {0.0033-0.0035} SEMI Prime, 2Flats, TTV<6μm, Empak cst
TS135 N/As [111-3°] ±0.5° 3" 381 SSP 0.001-0.005 {0.0036-0.0042} SEMI Prime, 2Flats, Empak cst
TS046 N/As [111-4°] 3" 889 SSPOx 0.001-0.004 {0.0032-0.0035} SEMI Prime, 2Flats, Back-side: LTO 500nm, Empak cst
S5858 N/As [112-3° towards[111]] ±0.5° 3" 890 SSP 0.002-0.003 Prime, 2Flats, Empak cst
D158 N/As [225] 3" 300 SSP 0.001-0.003 SEMI Prime, 1Flat, Empak cst
3185 P/B [100] 3" 500 OxDSPOx 0.01-0.02 SEMI Prime, 2Flats, Empak cst, Both-sides-polished, with Thermal Oxide 1.0μm±5% thick

50.8mm Degenerately Doped Silicon Wafer (Buy Online)
Item Typ/Dop Ori. Dia. Thck/(μm) Polish Res Ωcm Specs
N610 P/B [100] 2" 280 DSP 0.4-0.6 SEMI Prime, 2Flats, hard cst
6084 P/B [100] 2" 275 SSP 0.2-0.4 SEMI Prime, 2Flats, hard cst
6479 P/B [100] 2" 279 DSP 0.08-0.12 SEMI Prime, 1Flat, hard cst
H995 P/B [100] 2" 300 SSP 0.016-0.017 Prime, NO Flats, hard cst
L163 P/B [100] 2" 250 DSP 0.015-0.020 SEMI Prime, 1Flat, hard cst
M163 P/B [100] 2" 250 DSP 0.015-0.020 SEMI Prime, 1Flat, hard cst
T154 P/B [100] 2" 250 DSP 0.015-0.020 SEMI Prime, 1Flat, hard cst
E918 P/B [100] 2" 280 DSP 0.015-0.020 Prime, NO Flats, hard cst
5918 P/B [100] 2" 3,000 SSP 0.015-0.020 Groups of 5 + 5 + 6 wafers, Test, 2Flats, Individual cst, Wafers with defects
D570 P/B [100] 2" 250 DSP 0.01-0.02 SEMI Prime, 1Flat, hard cst, TTV<5μm
3489 P/B [100] 2" 300 SSP 0.01-0.02 SEMI, 2Flats, hard cst
6077 P/B [100] 2" 500 DSP 0.01-0.02 SEMI Prime, 2Flats, hard cst
5916 P/B [100] 2" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, hard cst
5959 P/B [100] 2" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, hard cst
7315 P/B [100] 2" 300 SSP 0.001-0.005 Prime, NO Flats, hard cst
B833 P/B [100] 2" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, hard cst
H607 P/B [100] 2" 525 DSP <0.01 {0.0076-0.0078} SEMI Prime, 2Flats, in hard cassettes of 5 wafers.
J096 P/B [111-10° towards[112]] 2" 280 SSP 0.5-0.6 SEMI Prime, 1Flat, hard cst
L445 P/B [111] ±0.5° 2" 275 DSP 0.1-0.3 SEMI Prime, 1Flat, hard cst
I096 P/B [111] ±0.5° 2" 280 SSP 0.1-1.0 SEMI Prime, 1Flat, hard cst
J445 P/B [111] ±0.5° 2" 500 DSP 0.1-0.3 SEMI Prime, 1Flat, hard cst
G776 P/B [111] 2" 1,000 SSP 0.001-0.005 SEMI Prime, 1Flat, hard cst
5533 P/B [111] ±0.5° 2" 500 DSP <0.01 SEMI Prime, 1Flat, hard cst
5596 P/B [111] ±0.5° 2" 500 DSP <0.01 {0.00087-0.00100} SEMI Prime, 1Flat, hard cst
7027 P/Ga Poly. 2"   C/C 0.024-0.036 Gallium doped Concentrate (each with measured Gallium content)
O763 N/Sb [110] 2" 375 SSP 0.005-0.020 SEMI, 1Flat, hard cst
P763 N/Sb [110] 2" 375 SSP 0.005-0.020 SEMI, 1Flat, hard cst
E858 N/As [110] ±0.5° 2" 280 SSP 0.001-0.005 {0.0048-0.0049} SEMI Prime, 1Flat, hard cst
F858 N/As [110] ±0.5° 2" 280 SSP 0.001-0.005 {0.0048-0.0049} SEMI Prime, 1Flat, hard cst, cassettes of 10 + 10 wafers
J237 N/Sb [100] 2" 300 SSP 0.01-0.02 SEMI Prime, 2Flats, hard cst
D576 N/Sb [100] 2" 500 DSP 0.01-0.02 SEMI Prime, 2Flats, in hard cassettes of 5 wafers
4501 N/As [100] 2" 7,050 SSP 0.0031-0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers
6075 N/As [100] 2" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, hard cst
6931 N/As [100] 2" 300 SSP 0.001-0.006 SEMI Prime, 2Flats, hard cst
7355 N/As [100] 2" 300 SSP 0.001-0.005 SEMI Prime, 2Flats, hard cst
2039 N/As [100] 2" 420 ±15 DSP 0.001-0.005 {0.0030-0.0034} SEMI Prime, 2Flats, Empak cst
D10 N/Ph [111] 2" 400 L/L 120-170 Lapped & edged
K615 N/Sb [111] ±0.5° 2" 300 SSP 0.05-0.09 SEMI Prime, 2Flats, hard cst
Q962 N/Sb [111-3.5°] ±0.5° 2" 300 SSP 0.05-0.09 SEMI Prime, 2Flats, in hard cassettes of 5 & 8 wafers
4958 N/Sb [111] 2" 2,900 DSP 0.013-0.015 Prime, NO Flats, Individual cst, Group of 5 wafers
9358 N/Sb [111-2.5°] ±0.5° 2" 280 SSP 0.012-0.017 SEMI, 2Flats, hard cst
6529 N/As [111] ±0.5° 2" 279 SSP 0.001-0.005 SEMI Prime, 1Flat, hard cst
6649 N/As [100] 2" 380 OxSSPOx 0.001-0.005 SEMI Test, TTV<5μm, 1,000A oxide on both sides, wafers with visible dopant rings. Group of 38 wafers

25.5mm Degenerately Doped Silicon Wafer (Buy Online)
Item Typ/Dop Ori. Dia. Thck/(μm) Polish Res Ωcm Specs
5092 P/B [100] 1" 275 SSP 0.015-0.020 SEMI Prime, 1Flat, Soft cst
6879 P/B [100] 1" 275 SSP 0.0022-0.0025 Prime, NO Flats, Soft cst
6908 P/B [100] 1" 250 ±10 DSP <0.02 Prime, NO Flats, Soft cst