Gallium Nitride-on-sapphire (GaN)

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Gallium Nitride on Sapphire (GaN)

GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate.   50 mm diam  on axis, n-type, GaN thickness ~0.5 umGallium Nitride on Sapphire Wafer

GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.

GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide.

50mm in diameter on-axis, n-type.

GaN thickness  ~(0.5-0.8) um.

AIN thickness ~0.1um.

GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire.

50mm in diameter, on-axis, n-type, GaN thickness  ~(0.5-0.8) um, AIN thickness ~0.1 um.

Item Typ/Dop Ori GaN (μm) Al203 (μm) Plane Pol Other Specs
2521 N <0001> 1 430 c SSP  
2649 Undoped <0001> 4-5 430 c SSP Useable surface area: > 90%, TTV: = 10um, BOW: = 10um, Warp: = 10um
2017   <0001> 4-6 600 c SSP