⚡ HEMT Structure Special
2" GaN on Sapphire (HEMT)
Structure: AlGaN Barrier / GaN Channel
Mobility: >1500 cm²/V·s
Ideal for RF Power Amplifier research.
GaN Epitaxy Quote
Specify your layer structure (e.g., 4µm UID GaN).
Or, Buy Online and Start Researching Today!
Why GaN on Sapphire?
- Wide Bandgap: 3.4 eV bandgap allows high-voltage operation.
- Mature Tech: Sapphire is the most cost-effective substrate for GaN growth compared to SiC or Bulk GaN.
- Applications: Blue/White LEDs, RF Power Amps, Power Switching.
In-Stock GaN Epitaxial Wafers
We stock standard GaN templates on C-plane Sapphire. Custom structures available upon request.
| Substrate | Diameter | Doping | GaN Thickness | Application | Link |
|---|---|---|---|---|---|
| Sapphire (0001) | 2" (50.8mm) | UID (Undoped) | 4-5 µm | HEMT / Buffer | Buy |
| Sapphire (0001) | 2" (50.8mm) | N-type (Si) | 4-5 µm | LED / Power | Buy |
| Sapphire (0001) | 4" (100mm) | UID (Undoped) | 5 µm | RF / Sensors | Buy |
| Sapphire (0001) | 4" (100mm) | P-type (Mg) | 0.5-1 µm | LED / Laser | Buy |
Application Spotlights
📡 Case Study: HEMT for RF Power
The Challenge: A researcher needed a High Electron Mobility Transistor (HEMT) structure for microwave applications. They required a specific stack: UID GaN channel (4µm) + AlGaN barrier.
The Solution: We supplied 4-inch GaN-on-Silicon (111) and Sapphire wafers with a 0.5nm surface roughness. The unpolished epitaxial surface was perfect for device fabrication without further processing.
💡 Case Study: Nanophotonics & LEDs
The Application: A photonics lab was building GaN nanostructures and required thin, high-quality GaN layers.
The Solution: We provided 4-inch Un-doped GaN on SSP Sapphire with ultra-thin layers (100nm and 150nm). This precise thickness control allowed for the etching of nanophotonic crystals.
⚡ Case Study: P-GaN for Nanowires
The Challenge: A PhD student was struggling to grow vertically oriented ZnO nanowires on p-type GaN.
The Solution: We supplied P-GaN (Mg-doped) on Sapphire. We clarified that the growth method was MOCVD and confirmed the polarity, helping the student reproduce their experimental results successfully.
Technical Data: GaN Properties
Gallium Nitride is a binary III/V direct bandgap semiconductor with a Wurtzite crystal structure. It is robust, hard, and thermally stable.
- Bandgap: ~3.4 eV (Wide Bandgap)
- Crystal Structure: Wurtzite
- Thermal Conductivity: Lower than Silicon Carbide (SiC), but sufficient for many RF applications when grown on Sapphire.
- Refractive Index: Variable with photon energy, crucial for LED light extraction.
Need Measurement Data? We can provide DCXRD Rocking curves, Room Temperature Raman Spectra, PL mapping, and AFM data for your specific batch upon request (additional fee may apply).