Sapphire Wafers (Al2O3): Optical & Semiconductor Grade

Single crystal sapphire substrates for LEDs (GaN growth), RFICs (Silicon-on-Sapphire), and Infrared Optics. Available in C-plane, R-plane, and A-plane orientations.

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🔵 Best Seller: C-Plane Sapphire

2 Inch (50.8mm) Wafer
Orientation: C-Plane (0001) ±0.2°
Thickness: 430µm
Polish: Single Side Polished (SSP)
The standard substrate for GaN LED research.

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Why Buy From Us?

  • All Orientations: We stock C, R, A, and M-plane.
  • Small Quantities: Buy 1 wafer or a full cassette of 25.
  • Custom Thickness: We can polish down to 100µm or provide thick 1mm+ windows.

In-Stock Sapphire Inventory

We carry standard sizes from 10mm squares up to 8-inch wafers.

Diameter Orientation Thickness Polish Application Link
2" (50.8mm) C-Plane (0001) 430µm SSP GaN / LED Buy
2" (50.8mm) R-Plane (1-102) 430µm DSP SOS / RFIC Buy
4" (100mm) C-Plane (0001) 650µm SSP Microfluidics Buy
6" (150mm) C-Plane (0001) 1,000µm DSP Optical Window Buy
10x10mm A-Plane (11-20) 500µm DSP Hybrid Circuits Buy
Diagram of Sapphire Al2O3 crystal structure showing C-Plane (0001), A-Plane (11-20), R-Plane (1-102), and M-Plane orientations.

Selecting the Right Orientation

Sapphire is anisotropic, meaning its properties depend on the crystal cut. Choosing the wrong orientation can ruin your epitaxial growth.

1. C-Plane (0001)

The most common orientation. It is chemically stable and has a lattice match suitable for Gallium Nitride (GaN) growth, making it the industry standard for blue/green LEDs and laser diodes.

2. R-Plane (1-102)

Preferred for Silicon-on-Sapphire (SOS) applications. R-plane sapphire allows for the hetero-epitaxial growth of silicon, used in high-speed RFICs and pressure sensors due to its excellent electrical isolation.

3. A-Plane (11-20)

Used for hybrid microelectronic applications requiring a uniform dielectric constant and high insulating characteristics. It is also often used for optical windows where birefringence needs to be minimized along specific axes.

Optical transmission spectrum of uncoated Sapphire (Al2O3) showing high transmission from 150nm (UV) to 5.5 microns (IR).

Growth Methods: KY vs. CZ vs. EFG

Not all sapphire is created equal. The growth method determines the defect density and cost.

Method Full Name Characteristics Best For
KY Kyropoulos High optical quality, low defect density. Large diameter (6"+) LEDs & Optics
CZ Czochralski Fast growth rate, good for C-axis rods. Laser rods, smaller substrates
EFG Edge-defined Film-fed Grows ribbons/tubes/sheets directly. Cost-effective tubes, specialized shapes
HEM Heat Exchanger Large boules, good homogeneity. Large optical windows

Optical Properties

Sapphire is a rugged optical material with a transmission range from 150nm (UV) to 5500nm (IR). It is extremely hard (Mohs 9), second only to diamond, making it scratch-resistant and ideal for harsh environments.

  • Refractive Index: ~1.77 (Visible)
  • Thermal Conductivity: ~25 W/m·K (at 100°C) – significantly better than glass.
  • Melting Point: 2040°C – survives high-temperature processing where quartz would fail.

🔬 Case Study: Durability & Cleaving

The Challenge: A researcher needed 4" and 6" substrates capable of withstanding:

  • High temperatures (up to 200°C).
  • Highly alkaline solutions (pH > 12).
  • Multiple reworks (stripping photoresist and reusing the wafer).

The Solution: We supplied C-Plane Sapphire. Beyond its chemical inertness, C-Plane is the "softest" orientation relative to others, making it the easiest plane to cleave for downstream processing.

Reference Case #199562