Silicon Carbide to Replace Silicon Wafers in Semiconductor Devices

university wafer substrates

We have a large selection of Silicon Carbide Substrates 4H and 6H epi ready.

You can buy as few as one wafer in diameters ranging from 5mm x 5mm up to 150mm.

Many are in stock and ready to ship.

Get Your SiC Wafer Quote FAST!

Our Silicon Carbide (SiC) wafers are used to fabricate High-Powerd Devices

Silicon Carbide (SiC) Semiconductor Market - By Device

  • Discrete Device
  • Diode
  • Module
  • Bare Die

Silicon Carbide Semiconductor Market - By Vertical

  • Telecommunications
  • Energy & Power
  • Renewable Energy & Photovoltaic
  • Automotive
  • EV
  • HEV
  • Military & Defense

I need 15-30 mm thickness and 4 to 8 inch diameter wafer, it should be clear and no pipes inside. Like crystal clear and full white in color. 

White Silicon Carbide Ingot for Moissanite Diamond

This super white SiC crystal is using for Moissanite Diamond,"clear and no pipes inside. Like crystal clear and full white in color".

white sic moissanite diamond

Please ask for pricing.

Silicon Carbide (SiC) Thin Films

Let us know how we can help you!

SiC thin films were grown onto polished p-type Si (100) wafers. Good crystallinity in the thin layers is desirable, as it affects different material properties. Since the sIC thin film deposits in amorphous nanocrystalline structures at low temperatures, a post-treatment such as annealing is necessary to improve the crystallination of the material.

Research shows that the ionized state is in the range of 0.5 - 1.1% of the total area, depending on the separation parameters and target composition. This seems to be very attractive, as it produces stuttering atoms and thus facilitates the formation of a crystalline phase. These properties allow the deposition of thin layers of nanocrystalline structures at low temperatures and the formation of thin layers with high - or low - pressure. Although there are no known techniques, the crystallinity of SICs differs considerably in the methods used, but low-pressure plasma-based techniques have been studied to enable deposition at room temperature, such as plasma-enhanced chemical dapor deposition and plasmionization.

Further details on the HiPIMS reactor are elsewhere, but the target is maintained at 3 mTorr, which is a flow rate of 20 sccm. The thin film is applied to an Aln buffer, which is equipped with a high-temperature, low-pressure and high-volume reactor (HV).

The carrier holder is held at a cutting time and a target value - the distance between the carrier material is set to 60 min or 60 mm, and 200 or 400 w are embedded for film growth. The floating potential of the film increases to 1.5 mTorr, with a float rate of 20 sccm and a floating potential ratio of 2.0.

Silicon Carbide Wafer Specs to Fabricate Power Devices

A scientist requested a quote for SiC wafers:

We need to practice etching and do not have other specs yet, but should mimic power devices. Can you recommend and quote? Can you thin 500um SiC wafers down to 350um?

UniversityWafer Replied and Quoted:

Power devices do not use 500um thick wafers; for 100mm products, a thickness of 350um is used.  Will this meet your

No Integrated Device Mfg  (IDM) wants to back-grind this 500um wafer down to a thinner level for device performance (On Resistance).  350um is the standard thickness that meets the need for shape control in the fab and thin enough to minimize the back-grinding process at the end of line.

Please ask for the specs and quote. Reference #254927.

Silicon Carbide Wafers to Replace Silicon

Silicon Carbide (SiC) wafers are increasingly found semiconductor devices that were once dominated by silicon.   Researchers have found that SiC semiconductor devices advantages over silicon wafers based devices include:

  • Faster speed
  • Smaller stronger (Silicon Carbide is one of the strongest materials on earth.)
  • Greater efficiency in normal and adverse condition
  • Cost-effective in many applications.

Silicon Carbide can handle much higher temperatures and greater voltages than silicon semiconductors. This is great news for solar as SiC inverters are more robust. SiC can replace silicon in the following applications:

  • Solar Inverters and power electronic devices
  • Heat exchangers in solar concentrating power plants
  • Electric Vehicles (EVs)

    silicon carbide substrates

Which Silicon Carbide Wafer Can be Used to Make Sensitive van der Pauw sensor?

Researchers have used 50.8mm (0001) P-type 4H silicon carbide to fabricate van der Pauw strain sensor.

The van der Pauw sensor was fabricated with the followng SiC specs: 4° off-cut surface from the basal plane (0001) towards the 〈11[2 with combining macron]0〉 orientation. The 4H-SiC wafer has a thickness of 350 μm, wiht 1 μm p-type epilayer, 1 μm n-type buffer layer, and a low-doped n-type substrate. The p-type layer was formed using aluminum dopants, with a concentration of 1018 cm−3, while doping concentration of the n-type layer was also 1018 cm−3 with nitrogen dopants.

The following Specs Will Work For Your Research:

4H-SiC (0001) with 1 μm thick p-type epilayer with a concentration of 1018 cm−3" this P-type SiC epitaxial wafer

1> the wafer 3" to 6" diameter,but usually do 4" and 6"
2> thickness upon customer's requirement,as long as no less than 100nm
3> usually based on DSP SiC,SSP needs to do custom

What Silicon Carbide Wafer Specs Do Researchers Use?

Below is just an example of what specs university scientists need to conduct their research.

I am interested in purchasing a 6H SiC wafer, approximately 0.3-0.5mm thick, 2" diameter, high resistivity. It would ideally be double-side polished, but I would consider single-side. I am interested primarily in its optoelectronic properties, namely its bandgap energy and conduction band recombination time. Can you please send me details about the wafers you have in stock.

UniversityWafer provide the following:

6H SiC wafer, approximately 0.3-0.5mm thick, 2" diameter, Semi insulating type high resistivity >1E5 Ohm-cm, double-side polished, but I would consider single-side

2’’ SiC Specification_SI-type_2-6H-SI wafer
Material : High Purity Single Crystal Silicon Carbide
Polytype : Single-Crystal 6H
Orientation : On-axis<0001> +/-0.5 deg
Primary Flat : <11-20> +/-5 deg
Primary Flat length : 15.88 +/- 1.65 mm
Secondary Flat orientation : Si-face: 90° cw. from orientation flat +/-5°
Secondary Flat length : 8.0 +/- 1.65 mm
Diameter : 50.8 +/- 0.38 mm
Thickness : 330/430 +/- 25 um
TTV : </= 20 um WARP : </= 25 um
Si-face Surface & Roughness : CMP Epi-ready polish,Ra<0.5nm
C-face Surface & Roughness : Optical polished Ra<1nm or Fine ground
Dopant : V-Doped
Conduction Type : Semi insulating-type
Resistivity : >1E5
Micropipe Density : </= 30 micropipes/cm2
Laser Marking : Back Side @ C-face
Package : Neutral packaging,Single wafer box unless otherwise specified
Qty. 1pcs (Please contact us for pricing.)

Silicon Carbide Benefits Over Silicon

German automotive supplier Robert Bosch has taken a step to make electric vehicles more efficient and thus increase their range, Reuters reports. Tesla will use silicon carbide mosfets for its main inverter, according to a reverse engineering analysis by engineering firm Munro & Associates. [Sources: 11]

Compared to silicon, 650V silicon carbide mosses require less components and less energy than other inverters, such as lithium-ion batteries. They have a smaller footprint and a lower weight than silicon, for example, but require more power, more energy and less space in the inverter. [Sources: 3, 8]

In light of these limitations, we take a look at some of the benefits that silicon carbide power semiconductors, also known as SiC - mosfet, bring. Silicon carbide presents a challenge to silicon production, as silicon is more expensive to manufacture, which in turn presents a challenge for wider application due to cost increases. To generate more power from a very simple circuit, modules can incorporate multiple silicon carbide Mosfet chips into the same module, such as in a hybrid inverter or even an electric vehicle (EV). Silicon carbide and cascodes are a matter of course for hybrid devices, but represent a manufacturing problem compared to silicon due to their high costs. [Sources: 1, 12, 13, 14]

ST Microelectronics, ROHM Semiconductor and Infineon seem to be the technology leaders at the moment, but at Palmour we and others are working on how to optimize the modules to take full advantage of silicon carbide. Gallium nitride (GaN) devices provide photovoltaics while meeting the increasing energy demand. These technologies meet this demand from the specification point of view, but do not offer significant advantages over silicon. [Sources: 1, 7, 13, 15]

In addition, GaN has irregular clusters of carbon rings that interfere with electronic function, and this advantage is significantly impaired by the large number of connections between them. Even if the disturbing carbon clusters, which are only a few nanometres in size, can form, they can cause problems in the construction of silicon carbide. [Sources: 10]

The other main advantage (sic) is the high thermal conductivity of the silicon carbide and its high temperature. The temperature can be much higher than about 1,000 degrees Celsius, while silicon carbide can work at very high temperatures. As if that were not enough, silicone carbide parts can handle a variety of conditions, such as high pressure, low temperature, high humidity, etc. [Sources: 0, 1, 5]

To go a step further, the use of silicon carbide for energy conversion, which is often used in electronic systems, can increase the efficiency of solar systems. For example, a solar inverter can save 10 megawatts per gigawatt hour - and this is achieved by using this component instead of silicon, which represents considerable energy savings. Using a solar inverter, for example, can save 10 megawatts, while silicone carbides consume up to 10 gigawatts. [Sources: 3, 8]

For example, a solar inverter can save 10 megawatts per gigawatt hour, which represents a considerable energy saving. [Sources: 8]

One of the main advantages of this application is the high thermal conductivity of silicon carbide, which can dissipate frictional heat generated by friction at interfaces. The Solar Energy Technologies Office (SETO) supports research and development projects to promote the use of silicon carbide in solar inverters, solar photovoltaics and solar cells. Wolfspeed, named after its founder and CEO, Dr. David Wolf, is a professor of electrical engineering at the University of California, San Diego School of Engineering and a member of the MIT Department of Electrical Engineering and Computer Engineering. He was a key player in the development and implementation of a number of innovative technologies for the production of silicon carbonate and silicon carbide components and an example of why we were able to continue to play a leading role in this market. [Sources: 6, 8, 9]

The high bandgap requires a much stronger electric field to overcome this gap, and this makes silicon carbide much thinner than silicon components that can handle higher critical electric fields [sic], which further reduces resistance and power losses. [Sources: 2, 5]

In power electronics, semiconductors are based on silicon, and if the system voltage is below 1kV, the energy efficiency of silicon carbide would be much higher. If your system voltages are above 1Kv, this is very convincing, but in the long run it is not worth the cost. [Sources: 7, 10]

Power semiconductors manufactured with silicon carbide (SiC) have no such material limitation. In high-performance electronics, Si C has the ability to support the same energy efficiency as silicon MOSFETs, but at a much lower cost. [Sources: 2, 7]

Power semiconductors made of silicon carbide are capable of withstanding high temperatures, high pressure and high voltages, as well as high radiation levels. Compared to standard silicon, silicon carbide tolerates a much higher number of high and low pressure conditions. This means that even if you make a silicon MOSFET with a power semiconductor version the same size as the standard version, it will be blocked at higher temperatures by the silicon carbon fiber version. [Sources: 1, 4, 12]