Indium Gallium Arsenide (InGaAs)

university wafer, a researcher's best friend
University Silicon Wafer for Production

Get your InGaAs quote FAST! Guaranteed!

 


InGaAs Wafers In Stock

 

InGaAs is a high-mobility semiconductor that promises to increase a transistor's performance for high-frequency applications.

 

 

Current InGaAs Inventory - Buy Online!

 

50.8mm Undoped (100) 350um SSP

Epi: Lattice matched n-type InGaAs:Si[100]±0.5°, thickness: 1.0um(±20%), Nc=1E17 -1E18/cc.

Sealed in individual wafer container. Substrate: 2" Indium Phosphide wafers, P/E 2"Ø×350±25µm.

 

Epi: Lattice matched p-type InGaAs:Zn[100]±0.5°, thickness: 1.0um(±20%),Nc=1E17 -1E18/cc.

Sealed in individual wafer container. Substrate: Indium Phosphide wafers, P/E 2"Ø×350±25µm.

 

50.8mm InP/InGaAs/InP Epi wafers

Substrate: Indium Phosphide wafers, P/E 2"Ř×380ą25ľm,  n-type P:S[100]ą0.5°,EDP<1E4/cm2.

One-side-polished, back-side matte etched, SEMI Flats.

Epi 1: InGaAs:[100] (100nm, etching stop layer).

 Epi 2: InP:[100](50nm, bonding layer).

Indium Gallium Arsenide Applications

 

Photodetectors

Commonly used to measure optical power in the near IR (NIR) range.

Indium Gallium Arsenide Photodetector

Transitors

Indium Gallium Arsenide Transistor

We sell the InGaAs and InP Substrates.

 

One concern with growing InGaAs on silicon is lattice mismatch.


Our engineers may be able to help yu in this regard. Please email us today.