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Popular Research Request:
"We need high Indium content (80-85%) InGaAs on InP for a p-i-n photodiode detector fabrication."
Our Solution: Reference #295539. We can customize the buffer layer and doping concentration (Zn, Si) to meet SWIR requirements.
Related Substrates
What is Indium Gallium Arsenide (InGaAs)?
Indium Gallium Arsenide is a ternary alloy of Indium, Gallium, and Arsenic. It is widely prized for its applications in high-frequency electronics and optics.
Because the bandgap can be tuned by changing the ratio of Indium to Gallium, InGaAs is the standard material for photodetectors operating in the near-infrared and Short-Wave Infrared (SWIR) spectrums (0.9 to 1.7 microns). To achieve high-quality crystals, InGaAs (specifically the In0.53Ga0.47As composition) is typically grown on Indium Phosphide (InP) substrates due to their matching lattice constants.
Key Applications
1. SWIR Photodetectors
InGaAs detectors are essential for night vision, optical coherence tomography (OCT), and fiber optic communications. They offer high sensitivity and fast response times compared to other IR materials.
2. High-Speed Electronics
Due to high electron mobility, InGaAs is used in High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) for radar and 5G communications.
Case Study: P-I-N Diode Fabrication
A university researcher recently contacted us regarding a P-I-N junction diode for particle detection. They required a thick layer structure (hundreds of microns).
The Challenge: Growing bulk crystals of In0.53Ga0.47As to 350µm thickness is generally not commercially viable. The standard industry approach is MOCVD epitaxy on an InP substrate.
The Solution (Quote HD68): We proposed an Epitaxial solution on a 2" InP substrate:
| Layer | Material | Thickness | Doping |
|---|---|---|---|
| Substrate | SI InP:Fe [100] | 350µm | Semi-Insulating |
| Epi 1 | n-type InGaAs | 40µm | Si (1E17/cc) |
| Epi 2 | p-type InGaAs | 0.5µm | Zn (1E18/cc) |
Research: RC Detector Stacks
Another client required a Resonant Cavity (RC) detector structure with a specific epitaxial stack. The challenge with these structures is often the lattice mismatch if the buffer layers are not designed correctly. Below is an example of a successful stack structure we discussed:
| Layer # | Material | Doping | Thickness (nm) |
|---|---|---|---|
| 8 | InP | p+ (1E18) | 50 |
| 7 | InGaAs | p++ (1E19) | 20 |
| 5 (Absorber) | InGaAs | NID | 100 |
| 1 (Buffer) | InGaAs | NID | 300 |
| Substrate | InP S.I. | - | 300µm |
Available Inventory (Ready to Ship)
We typically stock the following configurations. Contact us for current availability.
- 50.8mm Undoped InGaAs on InP: 350µm Thickness, SSP, Lattice Matched.
- Epi-Ready Wafers: Lattice matched p-type InGaAs:Zn on InP Substrates.
- Custom MOCVD: We can grow custom stacks based on your specific layer requirements.