Indium Gallium Arsenide (InGaAs) Wafers for Research

university wafer substrates

Indium Gallium Arsenide Wafers In Stock

 

InGaAs is a high-mobility semiconductor that promises to increase a transistor's performance for high-frequency applications.

 

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Indium Gallium Arsenide (InGaAs) to Fabricate pn Junction Diode

I was wondering if you had InGaAs wafers. (In:Ga ratio 53:47) I need thick layers for my application, so the thickness needs to be thicker than 50 microns. Also, would it be possible to know which materials are available as wafers? (several hundred microns thick) I am looking for thick semiconducting materials for a detector application, but I want to also base my material choice on its availability. Please let me know.


It would be great if you could recommend to me the material, after I explain what the purpose of my device is. I am trying to create a structure like the image below:

 

InGaAs pn Junction Diode

It is a pn junction diode, which I plan to operate under reverse bias.
This is to create and collect charges as charged particles travel through the depletion zone. (My device is a particle detector)

fabricating pn-junction diodes

I am wondering if the parts marked in red could be purchased from University wafer.
The material needs to be an n-type, with a window of p-type implant on the top surface.
I am planning to deposit metal on both top and bottom for electrodes, so it would be nice if the bottom layer has a material suitable for forming ohmic contact with metals. (the electrodes will probably be Cu/Au or Ti/Au).

The thickness of the bulk layer should be hundreds of microns, which I think is achievable with wafers.
Can you give me a list of wafers from the inventory which this setup would be possible?
After that, I can pick a suitable wafer from the list.

 

UniversityWafer, Inc. Quoted Replied:


I am not aware of any facility that grows bulk crystals of In(0.53)Ga(0.47)As alloy from which one could make wafers 50, or 100, or 350µm thick.

On the other hand, it is common to grow an Epi layer or layers of In(0.53)Ga(0.47)As on InP wafers (since the lattices match).
It is entirely common to grow a Zn doped p-type InGaAs on top of a Si doped n-type InGaAs layer.
However, in most such cases, the total InGaAs layer is about 1µm thick.

In theory, it is possible to grow a 40µm thick layer of InGaAs on an InP substrate. However, most such growth is done by the MOCVD process and this process gets very expensive for very thick InGaAs layers. However, if your budget can support it then we can make such wafers for you.

A characteristic of the MOCVD process is that it allows one to create very sharp transitions between n-type and p-type regions.

 

We shall try to offer the following:


Item Qty. Description
HD68. 2/10 Epi wafers, 2"Ø×350±25µm
Substrate: SI InP:Fe[100]±0.5°, Ro > 1E7 Ohmcm,
One-side-polished, back-side Alkaline etched,
Epi Layer 1: 40µm thinck, n-type In(0.53)Ga(0.47)As layer, Si doped, Nc=1E17/cc,
Epi Layer 2: 0.5µm thick, p-type In(0.53)Ga(0.47)As layer, Zn doped, Nc=1E18/cc
We are working on this RFQ, we should have a quote in a few days.

Please verify that this is what you need. We can offer double-side polished substrates and possibly substrates doped differently. We can offer different levels of doping and different thicknesses of the p-type layer.

 

I shall try to give you an idea of the incremental cost of the InGaAs layer thickness.

 

 

 


InGaAs Research Questions

 

A research client from a large semiconductor equipment manufacturer was interested in our InGaAs wafers.

 

Can you give me quotes on the 2" InGaAs wafers for the items below? 1. bare wafers, qty=10 to 100 2. Epi: Lattice matched n-type InGaAs:Si[100]±0.5°, thickness: 1.0um(±20%), Nc=1E17/cc, qty=10 to 100 3. InP/InGaAs/InP Epi wafers, qty=10 to 100

 

UniversityWafer, Inc. asked the following Questions.

 

Y ou want me to quote the three structures shown in the image below? Material Stack. Is that correct?

Regarding (1)
a. Semi-Insulating InP - that is to be 2"Ø InP:Fe(100) substrate wafer and it is to be 400µm {not 400nm} thick. Is that correct?
b. 150nm InP layer - that is to be n-type InP:Si, Nc=(3-8)E18/cc. Is that correct ?
c. 850nm InGaAs layer - that is undoped, lattice matched In(0.53)Ga(0.47)As - Is that correct ?
d. 160nm GaAsSb layer - that is p-type (Zn doped), lattice matched GaAs(0.51)Sb(0.49):Zn - is that correct?
Nc=2E10/cc is unrealistic, if you want p+ then perhaps (3-8)E18/cc or even (1-3)E19/cc is reasonable - please decide

Regarding (2)
a. Semi-Insulating InP - that is to be 2"Ø InP:Fe(100) substrate wafer and it is to be 400µm {not 400nm} thick. Is that correct?
b. 150nm InP layer - that is to be n-type InP:Si, Nc=(3-8)E18/cc. Is that correct ?
c. 2,000nm InGaAs layer - that is undoped, lattice matched In(0.53)Ga(0.47)As - Is that correct ?
d. 160nm GaAsSb layer - that is p-type (Zn doped), lattice matched GaAs(0.51)Sb(0.49):Zn - is that correct?
Nc=2E10/cc is unrealistic, if you want p+ then perhaps (3-8)E18/cc or even (1-3)E19/cc is reasonable - please decide

Regarding (3)
a. Is the substrate to be 2"Ø Semi-Insulating GaAs:-(100), 400µm thick ?
b. The three layers, 1,600nm, 300nm and 100nm are these all undoped GaAs or should they be doped to different degrees?
What do you mean by HT
c. 10× - that is to be 10 layers of In(0.16)Ga(0.84)As, 12nm thick, interspersed with 0 layers of GaAs, 12nm thick - is that correct?
Are these to be undoped or doped to be p-type ? Do specify target Nc.
d. The 400 nm GaAs spacer - is that to be undoped ?
e. 10×- that is to be 10 layers of In(0.16)Ga(0.84)As, 12nm thick, interspersed with 0 layers of GaAs, 12nm thick - is that correct?
Are these to be undoped or doped to be n-type ? Do specify target Nc.
f. 750 nm n+ GaAs - is that to be GaAs:Si, Nc=(3-8)E18/cc ?

 

indium gallium arsenide substrates

 

 

Please answer above to clarify what is needed.

 

Are you asking us to quote to make structures that you already use, or is this an experimental project/ If it is experimental then perhaps 1 wafer would be a better quantity to start with.

Do you actually need above structures or are you trying to get budgetary estimates. If these are budgetary estimates then I can give you an overall cost structure and you would not have to detail each request {for example, within broad limits the type and degree of doping has no influence on cost}.

 

We do want to help you any way that we can.

 

For your item 1:

What do you mean by "bare InGaAs" wafer?
Do you mean bulk InGaAs wafers, say 400µm thick?
What In:Ga ratio do you require?, Is it In(0.53)Ga(0.47)As or some other In;Ga ratio?
Are the wafers to be one-side-polished or double-side-polished ?

For your item 2:
What is the Epi-layer thickness? what is the Epi-layer doping?
The substrate InP wafer, is it to be Semi-Insulating or n-type Semi-Conducting?
Here is an example of such a wafer:


Item Qty. Description
GD16. 2/3/10 InGaAs:Si on InP:Fe Epi wafers,
Substrate: P/P 2"Ø×350±25µm InP:Fe[100]±0.5°, Ro>1E7 Ohmcm, EPD<1E4/cm²,
Both-sides-polished, EJ Flats (two),
EPI Layer: 0.75±0.15µm thick, n-type Lattice matched In(0.53)Ga(0.47)As:Si, Nc>2E18/cc
Note: Epi layer roughness close to one molecular layer; Some backside deposits expected.
Sealed in single wafer cassettes
Price: Depends on Qauntitiy

For your item 3
What is the IP Epi-layer thickness? what is the Epi-layer doping?
What is the InGaAs Epi-layer thickness? what is the Epi-layer doping?
The substrate InP wafer, is it to be Semi-Insulating or n-type Semi-Conducting?

 


Current InGaAs Inventory - Buy Online!

 

50.8mm Undoped (100) 350um SSP

Epi: Lattice matched n-type InGaAs:Si[100]±0.5°, thickness: 1.0um(±20%), Nc=1E17 -1E18/cc.

Sealed in individual wafer container. Substrate: 2" Indium Phosphide wafers, P/E 2"Ø×350±25µm.

 

Epi: Lattice matched p-type InGaAs:Zn[100]±0.5°, thickness: 1.0um(±20%),Nc=1E17 -1E18/cc.

Sealed in individual wafer container. Substrate: Indium Phosphide wafers, P/E 2"Ø×350±25µm.

 

50.8mm InP/InGaAs/InP Epi wafers

Substrate: Indium Phosphide wafers, P/E 2"Ř×380ą25ľm,  n-type P:S[100]ą0.5°,EDP<1E4/cm2.

One-side-polished, back-side matte etched, SEMI Flats.

Epi 1: InGaAs:[100] (100nm, etching stop layer).

 Epi 2: InP:[100](50nm, bonding layer).

 

Wafers for InGaAs Detectors

A scientist prototyping Indium Gallium Arsenide detectors. The research required that a 5 mm diameter InGaAs detector (used at 1590 nm) cost too much.

The scientist asked me to look into alternatives including potentially purchasing a full wafer or more (they expect to need about 350-400 detectors per year) and having someone cut and mount the detectors. I have no idea if this kind of thing is feasible or practical so wanted to start with the simple question of is this kind of approach at all viable? Does your company do things like this (ie. grow the wafers, and have the capability to cut and mount individual detectors)?

 

UniversityWafer, Inc. quoted the following:

5 mm diameter InGaAs detector (used at 1590 nm), we only offer chips:

 

Please contact us for pricing.

Indium Gallium Arsenide Applications

 

Photodetectors

Commonly used to measure optical power in the near IR (NIR) range.

Indium Gallium Arsenide Photodetector

Transitors

Indium Gallium Arsenide Transistor

We sell the InGaAs and InP Substrates.

 

One concern with growing InGaAs on silicon is lattice mismatch.


Our engineers may be able to help yu in this regard. Please email us today.