Thick & Thin Thermal Oxide Deposition on Silicon Substrates

university wafer substrates

Thermal Oxide Uniformity on Si Wafers

By depositing a thermal oxide onto a silicon wafer, researchers can improve the surface quality of the substrate. This is important for many reasons, including the fabrication of electronic components and MEMS devices.

UniversityWafer, Inc. supplies wet and dry oxide services from 20nm to over 20 micron thick. Our oxide uniformity across the wafer is an industry best!

Get Your Thermal Oxide Quote FAST!

Thermal Oxide on In Stock Diameters

Buy the following online and save!

25.4mm send us your specs/quantity.

50.8mm

76.2mm

100mm

150mm

200mm

300mm - please send us your specs/quantity.

How To Make a Nano-Semiconductor

Researchers from Seoul National University in South Korea have used the following wafers to research fabricating micro (nano) semiconductors.

Thermal Oxide Item #2007
150mm P/B <100> 0-100 625um SSP Test Grade with 1,000A of thermal oxide

Thermal Oxide for Testing Wafer Processing Equipment

Researchers have used the following wet thermal oxide wafers for testing their substrate processing semiconductor equipment.

Si Item #2105

150mm P/B <100> 0-100 ohm-cm 625um SSP w/1000nm WET Thermal Oxide

Si Item #2069

100mm P/B <100> 0-100 500um SSP with 500nm of Thermal Oxide

Thermal Oxide Coated Silicon Wafers for Biomedical Applications

Scientists have used the following thermal oxide on silicon wafers for their biomedical research.

Item# 1583

100mm P/B <100> 0.001-0.005 500um SSP with 300nm of Thermal Oxide

How to Fabricatate Microfluidic Devices

The design is transferred to the photoresist layer by exposure to UV light through a photomask and the unexposed areas are washed off to obtain the main shape. The transparent film is used to create a photo - mask around the design, and 4 silicon wafers are used for spinning.

The microfluidic device is built by gluing a plate of polydimethylsiloxane (PDMS) to a glass slide. In order to produce a PD-MSM plate with microfluidic properties, a polymer mixture with PDms as hardening agent is produced. The mixture is desalted in a desiccator and poured onto the silicon wafers.

The polymer mixture is then cured in the oven at 70 degrees Celsius in the oven for 2 hours and then in a cold water bath for 3 hours.

After curing the polymer, the PDMS is peeled out of the mould and the input and output is punched into the biopsy mould. The final microfluidic device is produced by connecting the plate to the sliding glass by means of a plasma chamber. After the sonication with ethanol and dried nitrogen gas, both the PDMS coating and the glass slide are cleaned.

Fabricating Microdisks for Optical Application Thick Thermal Oxide on Silicon Wafers

A scientist needed to fabricate microdisks for optical application on small diameters silicon with a 5 micron thick oxide layer. But the lab budget was limited.

We have the solution with 50.8mm and 76.2mm thermal oxide coated wafers.

Items #3589, #3591, and #3592

Thermal Oxide to Fabricate Organic Field Effect Transistors (OFET)

OFET geometry is similar to that of a thin film transistor (TFT). It uses thermally grown oxide as a gate dielectric and a thin-film silicon transistor as a gate. The most common use of this geometry in silicon transistors is a geometry similar to that of the thin-film transistor.

Clients have used the following wafer for the OFET research:

100mm N/Ph (100) 1-10 ohm-cm SSP 500um with 300nm of Dry Thermal Oxide

What Silicon Wafer Should I Use for Raman, SEM, and AFM?

A scientists asked our help:

I am looking to buy Si wafers for Raman, SEM, and AFM. I was told to get some with a 300nm oxide layer, single side polished, and I want either 2- or 3-inch diameter. I am having trouble picking which ones to get, and I don't know how to tell if it has an oxide layer and how thick it is. Is this something you can help me with?

UniversityWafer, Quoted and scientist purchased:

2" P(100) 1-10 ohm-cm SSP 280um with 300nm oxide layer

Please contact us for pricing. High-quality at a low price!



Thermal Oxide Depositon on Silicon Wafers

Below are just some of our inventory of thermal oxide on silicon wafers. Please let us knowi f you can use or if we can quote you on another spec.

We have all diameters and grades. From mechanical grade to prime grade with the finest tolerances. Degenerately doped and Undoped Wafers in small and large quantities available. Dry and wet oxide from 10nm to 20,000 nanometers of thermal oxide.

ID Diam Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Description
2212 50.8mm P B <100> 0-100 300-350um SSP w/1,000nm Wet Thermal Oxide
2001 50.8mm P B <100> 0-100 300-350um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2002 50.8mm N P <100> 0-100 300-350um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2243 50.8mm P B <100> 0.001-0.005 280um SSP with 90nm of Thermal Oxide
2284 50.8mm P B <100> 0-100 325um SSP w/ 300nm Thermal Oxide. Thickness Tolerance+/-15%.
3475 50.8mm P B <100> 1--5 281um SSP W/ 300nm Wet Thermal Oxide, TTV <5um, Single Flat.
2726 50.8mm P B <100> 0-100 325um SSP w/ 100nm Wet Thermal oxide
3214 50.8mm N P <100> 1--10 270um SSP w/ 300nm Wet Thermal Oxide
3481 50.8mm P B <100> 1--10 270um SSP w/ 1,000nm Wet Thermal Oxide
3482 50.8mm P B <100> 1--10 270um SSP w/200nm Wet Thermal Oxide
3509 50.8mm P B <100> 0.001-0.005 280um SSP W/ 90nm of Thermal Oxide, Thickness Tolerance+/-15%. Sold "As-Is".
3510 50.8mm P B <100> 0.001-0.005 280um SSP W/ 300nm of Thermal Oxide, Thickness Tolerance+/-10%. Sold "As-Is".
3588 50.8mm P B <100> 1--10 280um SSP W/ 100nm Wet Thermal Oxide
3589 50.8mm P B <100> 1--10 280um SSP w/ 5000nm (5um) Wet Thermal Oxide
3590 50.8mm N P <100> 1--10 280um SSP W/ 100nm Wet Thermal Oxide
3593 50.8mm P B <100> 1--10 280um SSP W/ 90nm DRY Thermal Oxide
3594 50.8mm P B <100> 1--10 280um SSP W/ 300nm DRY Thermal Oxide
1428 76.2mm P B <100> 1--10 380um SSP W/ 300nm Wet Thermal Oxide
1430 76.2mm P B <100> 1--10 380um SSP w/ 1,000nm Wet Thermal Oxide
1431 76.2mm N P <100> 1--10 380um SSP w/ 1,000nm Wet Thermal Oxide
1455 76.2mm N P <100> 1--10 380um SSP w/ 300nm Wet Thermal Oxide
2003 76.2mm P B <100> 0-100 406-480um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2004 76.2mm N P <100> 0-100 406-480um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2645 76.2mm P B <100> 1--10 380um SSP w/ 100nm Wet Thermal Oxide
2715 76.2mm P B <100> 0-100 443um SSP w/ 1,000nm Wet Thermal oxide
2802 76.2mm P B <100> 0-100 450um SSP w/ 150nm Wet Thermal Oxide
2881 76.2mm N P <100> 1--10 380um SSP w/ 50nm WET Thermal Oxide
3038 76.2mm P B <100> 0-100 450um SSP w/ 100nm Wet Thermal Oxide
3075 76.2mm N P   0-100 425um SSP w/ 1um Wet Thermal Oxide, unknown orientation. NON-REFUNDABLE, POOR QUALITY. Sold "As-Is".
3219 76.2mm P B <100> 5--10 380um SSP w/ 100A Dry Thermal Oxide
3332 76.2mm P B <100> 1--10 380um SSP w/ 90nm Wet Thermal Oxide
3400 76.2mm P B <100> <0.005 380um SSP w/200nm Wet Thermal Oxide
3459 76.2mm P B <100> 1--10 380um SSP w/ 285nm Wet Thermal Oxide
3591 76.2mm P B <100> 1--10 380um SSP w/ 5000nm (5um) Wet Thermal Oxide
3595 76.2mm P B <100> 1--10 380 SSP W/ 90nm DRY Thermal Oxide
3596 76.2mm P B <100> 1--10 380um SSP W/ 300nm DRY Thermal Oxide
1066 100mm P B <100> 1--10 500um SSP w/ 100nm Wet Thermal Oxide
1385 100mm P B <100> 1--10 500um SSP w/1000nm Wet Thermal Oxide
1432 100mm P B <100> 1--10 500um SSP W/ 300nm wet thermal oxide
1433 100mm N P <100> 1--10 500um SSP w/ 300nm Wet Thermal Oxide. Great sputtering wafer for thin film deposition.
1435 100mm N P <100> 1--10 500um SSP w/ 1,000nm Wet Thermal Oxide
1583 100mm P B <100> 0.001-0.005 500um SSP w/ 300nm Wet Thermal Oxide with Thickness Tolerance +/- 7%
1782 100mm N As <100> 0.001-0.005 500um SSP W/ 285nm Wet Thermal Oxide, WITH DOPANT RINGS, item sold "AS - IS".
2069 100mm P B <100> 0 - 100 500um SSP w/ 500nm Wet Thermal Oxide
1854 100mm N P <100> 1--10 500um SSP w/ 100nm Wet Thermal Oxide
2005 100mm P B <100> 0-100 500um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2006 100mm N P <100> 0-100 500um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2104 100mm P B <100> 0-100 500um SSP w/ 1,000nm WET Thermal Oxide
2236 100mm P P <100> 1--10   SSP w/ 100nm Wet Thermal Oxide. Wafers have haze on the surface. NON-REFUNDABLE, POOR QUALITY. Sold "As-Is".
2253 100mm P B <100> 0-100 500um SSP w/ 300nm Wet Thermal Oxide. Thickness Tolerance+/-15%.
2360 100mm P B <100> 1--10 525um SSP w/ 10,000nm (10um THICK) WET THERMAL OXIDE
2366 100mm N P <100> 1--10 500um SSP w/ 300nm Wet Thermal Oxide with defects on wafers. NON-REFUNDABLE, POOR QUALITY. Sold "As-Is".
2470 100mm P B <100> 0-100 500um SSP W/ 200nm Wet Thermal Oxide
2570 100mm N P <100> 1--10 500um SSP w/ 2um Wet Thermal Oxide (2,000nm)
3533 100mm P B <100> 0.001-0.005 450um SSP 300nm Wet Thermal Oxide
2795 100mm P B <100> 1--20 625um SSP w/ 300nm Wet Thermal Oxide
2820 100mm P B <100> 0.001-0.005 500um SSP w/ 300nm Wet Thermal Oxide, Poor Quality; Sold As-Is. NON-REFUNDABLE.
2865 100mm P B <100> 1--10 500um SSP W/ 300nm Wet Thermal Oxide, AND: In-situ sputter etch followed by sputter deposition of 200Å Ti and 2,000Å Pt.
2893 100mm P B <100> 0.001-0.005 525um SSP w/ 90nm Dry Thermal Oxide
2946 100mm P B <100> 0.01-0.02 525um SSP w/300nm WET Thermal Oxide
2952 100mm P B <100> 1--10 500um SSP w/ 300nm Wet Thermal Oxide, POOR QUALITY, with visual discolorations of the thermal oxide film. Sold "As-is".
3081 100mm   As <111> 0.001-0.004 525um SSP W/ 285nm Wet Thermal Oxide, WITH DOPANT RINGS, item sold "AS - IS".
3092 100mm P B <100> 1--10 500um SSP With 50nm Wet Thermal Oxide. AND; Stains on oxide, NON-REFUNDABLE, POOR QUALITY. Sold "As-Is".
3141 100mm P B <100> 0.001-0.005 500um SSP UNKNOWN LAYERS - W/290nm Wet Thermal Oxide, AND another UNKNOWN LAYER. NON-REFUNDABLE, POOR QUALITY. Sold "As-Is".
3201 100mm P B <100> 0-100 500um SSP NO FLATS, 1um Wet Thermal Oxide
3220 100mm N As <100> 0.001-0.005 500um SSP w/ 285nm Wet Thermal oxide, Thickness Tolerance+/-15%. WITH DOPANT RINGS, item sold "AS - IS".
3312 100mm P B <111> <0.005 525um SSP w/ 50nm DRY thermal oxide on POLISHED side only.
3333 100mm P B <100> 1--10 500um SSP w/ 285nm Wet Thermal Oxide
3349 100mm P B <100> 0.001-0.005 500um SSP w/ 280um Wet Thermal Oxide with Thickness Tolerance +/- 7%
3369 100mm P B <100> 0.001-0.005 500um SSP w/ ~240nm Wet Thermal Oxide, Poor Quality OXIDE LAYER. Sold "As-Is".
3370 100mm P B <100> 1--10 500um SSP w/1,500nm Wet Thermal Oxide
3393 100mm P B <100> 0-100 500um SSP w/ 1275nm Wet Thermal Oxide
3412 100mm P B <100> 0.01-0.05 525um SSP w/ 2um Wet Thermal Oxide (2,000nm)
3464 100mm P B <100> 10--20 500um SSP w/1,000nm Wet Thermal Oxide
3473 100mm P   <100> 1--10 500um SSP W/ 2,000nm Wet Thermal Oxide
3592 100mm P B <100> 1--10 500um SSP w/ 5000nm (5um) Wet Thermal Oxide
3597 100mm P B <100> 1--10 500um SSP W/ 90nm DRY Thermal Oxide
3598 100mm P B <100> 1--10 500um SSP W/ 300nm DRY Thermal Oxide
2007 150mm P B <100> 0-100 625um SSP w / 1,000A and up to 10,000A Wet Thermal Oxide. Buyer MUST email or call with exact Oxide amount needed!
2026 150mm P B <100> 0-100 675um SSP w/ 300nm Wet Thermal Oxide, Thickness Tolerance+/-15%.
2105 150mm P B <100> 0-100 625um SSP w/1000nm WET Thermal Oxide
3495 150mm P B <100> 1--30 620-675um SSP WITH 300nm Wet Thermal Oxide
3599 200mm P B <100> 1--10 725um SSP W/ 100nm Wet Thermal Oxide, with Thickness Tolerance +/-15%
3600 200mm P B <100> 1--10 725um SSP W/ 300nm Wet Thermal Oxide, with Thickness Tolerance +/-15%
3601 200mm P B <100> 1--10 725um SSP w/ 1,000nm (1um) Wet Thermal Oxide, with Thickness Tolerance +/-7%
3602 200mm P B <100> 1--10 725um SSP w/ 2,000nm(2um) Wet Thermal Oxide, with Thickness Tolerance +/-7%
3603 200mm P B <100> 1-100 725um SSP W/ 100nm Wet Thermal Oxide
3604 200mm P B <100> 1-100 725um SSP W/ 300nm Wet Thermal Oxide
3605 200mm P B <100> 1-100 725um SSP W/ 1000nm (1um) Wet Thermal Oxide
3606 200mm P B <100> 1-100 725um SSP W/ 2000nm (2um) Wet Thermal Oxide
3607 200mm P B <100> 1-100 725um SSP W/ 5000nm (5um) Wet Thermal oxide
3608 200mm P B <100> 1-100 725um SSP W/ 90nm DRY Thermal Oxide
3609 200mm P B <100> 1-100 725um SSP W/ 300nm DRY Thermal Oxide

What are Some Thermal Oxide Deposit Methods?

The process of thermal oxide deposition can be described by two models: wet oxidation and dry oxidation. Wet oxidation involves exposing the silicon wafer surface to an oxidizing agent and growing an oxide layer on top of it. DRY Thermal Optics is similar, but the thickness of the oxide layer should be higher than the wet version. Both types of films should have the same properties. Wet oxidation produces a thin layer of SiO2 and a thicker film should have the same characteristics as a thick film.

Thermal oxidation is a multi-step process involving diffusion of oxidants, chemical reactions and volume increase. It transforms silicon substrates into SiO2. The temperature, pressure, and crystal orientation influence the oxidation process. The oxidation ambient can be controlled, thereby enabling precise process control. For the best results, thermal oxidation should be performed on a bare silicon surface. This is a common process for creating semiconductor devices and is a very effective way of producing high-quality semiconductors.

The process is complex, involving diffusion of oxidants and oxygen atoms, a chemical reaction, and a volume increase. It is used to deposit dense layers of silicon on a variety of surfaces, such as semiconductors, and consists of three main stages: silicon oxidation and thermal oxidation. The reaction time of the oxidants and the oxidation rate are dependent on the oxygen diffusion velocity through the silicon dioxide layer. The growth rate decreases as the silicon dioxide layer becomes thicker. This process produces amorphous SiO2 which is amorphous, meaning that not all of the bonds are intact.

In thermal oxidation, the process involves a chemical reaction and a volume increase. This process transforms silicon substrates into SiO2 by converting silicon into the corresponding oxidation product. The oxidation ambient is highly dependent on the oxidant species, temperature, and crystal orientation. The growth rate is higher when dopants are introduced inside the substrate. Its efficiency depends on the size of the oxidation chamber.

Wet Thermal Oxide Deposition: The process of thermal oxide deposition involves the use of pure steam or heat to grow the silicon dioxide layer. It is a relatively simple process, though, with the same advantages as the dry deposition. It is also a viable alternative to ion-sputtering and other high-temperature methods. It can produce thinner layers and improve the surface of semiconductors, reducing edges and improving a semiconductor's electrical conductivity.

Aside from its utility as a gate oxide for silicon semiconductors, thermal oxides can also be used to improve the surface of the silicon substrate. For example, they can be used to improve the surface of a silicon wafer. The process is complex and requires multiple layers, but it is the most popular way to improve a semiconductor. The method is used for fabrication of many types of electronic components, including LEDs and high-speed sensors.

In addition to semiconductor applications, thermal oxide wafers are also used in MEMS devices. The process improves the surface of silicon wafers by removing unwanted particles. The film has high electric strength and is very pure. This process is also a good choice for making thin films. These films have many advantages over conventional ion-sputtering. The advantage of this method is that it produces more uniform layer. Its benefits are many.

The preferred electrode substrate is composed of a conductive material, such as Cu, W, or Ta. The first and second oxides are deposited on the surface of the substrate using the water law etch process. The second layer is then deposited over the first layer. This process is a good choice for many applications. The invention will be a valuable asset for companies looking to build semiconductors and other electronic devices. While the method may be complex, it does have many benefits for electronics manufacturers.

The preferred electrode substrate is made of a conductive material, such as Cu. It is useful for many applications in transistors, capacitors, and decoupling capacitors. The other important use of the material is as a dielectric material. It is very durable and resists moisture. This process also provides an excellent way to make thin films for the manufacture of optical fibers. It is also advantageous for the manufacturing of high-quality electronics.