Indium Phosphide (InP) Substrates

university wafer substrates

Indium Phopshide (InP)

InP's exceptional electron velocity over silicon and gallium arsenide substrates is used in high-power and high-frequency electronics.

Indium Gallium Arsenide (InGaAs) are used in pseudomorphic heterojunction bipolar transistor that operate at 604 GHz.

InP's direct bandgap makes it into optoelectronics devices like laser diodes that are used in the optical telecommunications industry, to enable wavelength-division multiplexing.

 

InP Wafer Fast Quote Guaranteed!


 

What Substrate Should I Use for THz modulation?

A scientist asked the following:

I am interested in using them for THz modulation. I basically need a semiconductor with low bandgap, in order to use infrared light (1030 nm) to photo-excite carriers, but at the same time I'd need it to be almost dispersionless and with low absorption in the THz region. I am currently using Germanium, but I would like to explore other possibilities. Would have any suggestions, by any chance?

 

UniversityWafer, Inc. Quoted:

 

Lowest Energy Gap Semiconductors

For Indium Phosphide we suggest the following. I would suggest Gallium Antimonide (GaSb) and Indium Antimony (InSb), for these are the lowest energy gap semiconductors.

For THz modulators people also use InP. We have the following cubes of InP that were prepared specifically for such use.

 

Description: All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
Item Material Orient. Diam (mm) Thck(μm) Pol ResistivityΩcm Nca/cm3 Mobilcm2/Vs EPD/cm2
D745 SI InP:Fe cube [100] 8×4 3,500 P/P 2.50E+07 1.30E+08 2,330 6.80E+04

 

 

Below are just some of the Indium Phosphide wafers that we have in stock.

 

We also have InP specials that you can buy online here!

 

Item Qty in
Stock
Material Orient. Diam
(mm)
Thck
(μm)
Surf.
5176 2 InP:S+Zn [100] 2" 400 SSP
5243 4 SI InP:Fe [100] 2" 350 SSP
C745 3 SI InP:Fe cube [100] 8x4 3,500 DSP
D745 18 SI InP:Fe cube [100] 8×4 3,500 DSP
5052 5 undoped InP:- [100] 2" 350 SSP
F745 3 undoped InP:- Seed crystal [100] 16x16 75,000  
G745 10 undoped InP:-Seed crystal [100] 8x8 mm 75,000  
K661 5 undoped InP:- [111A] ±0.5° 2" 350 SSP
B745 7 n-type InP:S [100] 2" 2,000 SSP
L206 0.55 InP:(S+Zn) Ingot [100] 2"    
J206 1.35 n-type InP:S Ingot [100] 2" 133,400  
2206 1.2 n-type InP:S Ingot [100] 2" 117,490  
O206 0.3 p-type InP:Zn Ingot [100] 2" 31,750  
P206 0.63 InP:(S+Zn) Ingot [100] 2" 33,500  
N206 1.41 n-type InP:S Ingot [100] 2" 114,300  
M206 1.4 n-type InP:S Ingot [100] 2" 95,000  
R206 3 n-type InP:S Ingot [100] 2" 101,600  
S206 0.45 n-type InP:S Ingot Poly 2" 20,000  
H206 0.57 n-type InP:S Ingot [100] 2" 54,000  
K206 0.66 n-type InP:S Ingot [100] 2" 63,500  
I206 0.26 n-type InP:S Ingot [100] 2" 28,600  
Q206 1.48 n-type InP:S Ingot [100] 2" 158,750  
P050 5 n-type InP:(S+Zn) [100] 2" 400 SSP
P040 1 n-type InP:S [100] 2" 350 SSP
41 2 n-type InP:S [100] 2" 400 SSP
P041 2 n-type InP:S [100] 2" 400 SSP
P029 5 n-type InP:S [100] 2" 400 SSP
474A 3 n-type InP:S [100] 2" 400 SSP
474 4 n-type InP:S [100] 2" 400 SSP
636 4 n-type InP:S [115] 2" 400 SSP

Indium Phosphide Substrates are Great For:

Indium Phosphide Substrate

  • Lasers
  • Photodetectors
  • HEMTs
  • HBTs

Indium Phosphide (InP) for High-Power Electronics

Indium Phosphide Night Vision Goggles

When Silicon and Gallium Arsenide won't work for your High-Power, High-Frequency Electronics, choose Indium Phosphide wafers for the results you desire!

Spaced Based Indium Phosphide (InP) for long duration missions in medium-to-high radiation orbits

 

Indium Phosphide Solar Cells