We have a large selection fo (100) Ori Silicon Substrates in stock and ready to ship. Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
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Why do Silicon Wafers have Notches, Flats or are Perflectly Round?
Wafers under 200mm have Flats. Wafers that are 200mm or larger have notches. Notches were first introduced with 200mm wafers in 1992.
Flats help determine the silicon wafers crystalline Ori. But not always! Some clients perfer to have just one flat on their Si wafers for whatever reason. When you see Semiconductor or SEMI standards then you know you'll have the industry standard flats.
Silicon Wafer Flat Positions by Ori
(100) oriented wafers cleave easier and uniformily compared to other Oris such as (111).
Silicon Wafer Flat Length by Diameter
Below are the SEMI standard flat length by diameter. 200mm Silicon Wafers and larger usually have V notches instead of flats.
Diameter of Silicon Wafer: 50 mm (2") and Flat Length |
|
| 1. Primary flat | on (01 T) plane ± 0.5°. |
| 2. Secondary flat | 90° ± 1° ccw to primary flat |
| 3. Primary flat length: | 15.9 ± 1.5 mm |
| 4. Secondary flat length: | 8.0 ± 1.5 mm |
Diameter of Silicon Wafer: 75 mm (3") and Flat Length |
|
| 1. Primary flat | on (01 T) plane ± 0.5°. |
| 2. Secondary flat: | 90° ± 1° ccw to primary flat. |
| 3. Primary flat length: | 22.2 ± 2.0 mm |
| 4. Secondary flat length: | 11.2 ± 1.5 mm |
Diameter of Silicon Wafer: 100 mm (4") and Flat Length |
|
| Thickness: | 525 um (20.5 mils) |
| Primary flat length: | 32.5 mm |
| Secondary flat length: | 18.0 mm |
| Bow, max: | 40 um |
| Warp, max: | 40 um |
| TTV (flatness), max: | 10 um |
| Primary flat Ori: | <110> |
Diameter of Silicon Wafer: 150 mm (6") and Flat Length |
|
| Thickness: | 675 um (26.3 mils) |
| Primary flat length: | 57.5 mm |
| Secondary flat length: | 37.5 mm |
| Bow, max: | 60 um |
| Warp, max: | 60 um |
| TTV (flatness), max: | 10 um |
| Primary flat Ori: | <110> |
Related Silicon Wafer Products
- Silicon Wafers
- 200mm Silicon Wafers
- Float Zone Silicon Wafers
- Total Thickness Variation TTV
- Silicon-on-Insulator Wafers
Silicon Substrates with a (100) Orientation
Below are just some of the wafers that we have in stock.
| Item | Material | Orient. | Diam(mm) | Thck(μm) | Surf | Res Ωcm | Comment |
|---|---|---|---|---|---|---|---|
| H201 | P/B | [100] | 4" | 220 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
| G201 | P/B | [100] | 4" | 230 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
| 6269 | P/B | [100-4° towards[110]] ±0.5° | 4" | 525 | P/E | FZ >2,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| N942 | P/B | [100] | 4" | 420 | C/C | FZ 850-900 | SEMI Prime, 2Flats, Empak cst |
| 6288 | P/B | [100] | 4" | 200 ±10 | P/P | FZ 100-120 | SEMI Prime, 1Flat, Empak cst |
| 4902 | P/B | [100] | 4" | 250 | P/P | FZ 1-3 {0.97-1.01} | SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs. |
| 6100 | P/B | [100-6.0° towards[111]] ±0.5° | 4" | 350 | P/P | FZ 1-10 | SEMI Prime, 2Flats, Empak cst |
| 5630 | n-type Si:P | [100] | 4" | 400 ±10 | P/P | FZ 6,000-8,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 3861 | n-type Si:P | [100] | 4" | 200 ±10 | P/P | FZ >5,000 | SEMI TEST (Scratches & defects on back-side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst |
| H411 | n-type Si:P | [100] | 4" | 380 | P/E | FZ 5,000-10,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers |
| J724 | n-type Si:P | [100] | 4" | 425 | C/C | FZ >5,000 | 2Flats (p-type flats on n-type wafers), Empak cst |
| 2355 | n-type Si:P | [100-1.5° towards[110]] ±0.5° | 4" | 525 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Lifetime>980μs, in Empak |
| E454 | n-type Si:P | [100] | 4" | 500 | G/G | FZ 4,300-6,300 | SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst |
| G050 | n-type Si:P | [100] | 4" | 525 | P/E | FZ 4,200-8,000 | SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
| E180 | n-type Si:P | [100] ±0.2° | 4" | 380 ±10 | P/E | FZ >3,500 | SEMI TEST (in opened Empak cst), 1 Flat |
| 6241 | n-type Si:P | [100] | 4" | 400 ±10 | P/P | FZ 3,100-6,800 | SEMI Prime, 2Flats, TTV<5μm |
| I937 | n-type Si:P | [100] | 4" | 200 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs, |
| 2454 | n-type Si:P | [100] | 4" | 400 | P/E | FZ 2,000-6,500 | SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs |
| 5683 | n-type Si:P | [100] | 4" | 400 | P/E | FZ 2,000-6,500 | SEMI, 2Flats, Empak cst |
| S5798 | n-type Si:P | [100] | 4" | 915 ±10 | E/E | FZ 2,000-3,000 | 1Flat at [100], Empak cst |
| E189 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 1,100-1,600 | SEMI, 1Flat, Empak cst |
| S6284 | n-type Si:P | [100] ±1° | 4" | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<1μm, in Empak cst |
| E290 | n-type Si:P | [100] | 4" | 200 ±10 | BROKEN | FZ 800-1,500 | Broken P/E wafers, in various size pieces, Lifetime >1,000μs |
| D189 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 800-1,500 | SEMI, 1Flat, Empak cst |
| H189 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 800-1,500 | SEMI, 1Flat, Empak cst |
| 5625 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 400-1,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 5543 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 198-200 | SEMI Prime, 1Flat, Empak cst |
| 6195 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 50-70 | SEMI Prime, 1Flat, Empak cst |
| 5973 | n-type Si:P | [100] | 4" | 570 ±10 | E/E | FZ 50-70 | SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs. |
| F843 | n-type Si:P | [100] | 4" | 300 | P/P | FZ 1.2-2.0 | SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst |
| G843 | n-type Si:P | [100] | 4" | 300 | P/P | FZ 1.2-2.0 | SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst |
| 6099 | n-type Si:P | [100-6°] ±0.5° | 4" | 350 | P/P | FZ 1-10 | SEMI Prime, 2Flats, Empak cst |
| 6128 | n-type Si:P | [100] | 4" | 525 | P/P | FZ 1-5 | SEMI Prime, 2Flats, Empak cst |
| C976 | n-type Si:P | [100-4° towards[111]] ±0.5° | 4" | 525 | P/E | FZ 1-10 {3.2-4.0} | SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers |
| D301 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >30,000 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
| 6301 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >30,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 6367 | Intrinsic Si:- | [100] | 4" | 350 | P/P | FZ >20,000 | Prime, 1Flat, Empak cst, TTV<5μm |
| 5821 | Intrinsic Si:- | [100] | 4" | 400 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
| I693 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides |
| 6356 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<2μm |
| S962 | Intrinsic Si:- | [100] | 4" | 525 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer |
| F051 | Intrinsic Si:- | [100] | 4" | 525 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| J146 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >20,000 | Prime, 1Flat, Empak cst |
| K146 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >20,000 | Prime, 1Flat, Empak cst |
| G444 | Intrinsic Si:- | [100] | 4" | 300 | P/E | FZ 16,000-20,000 | SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect |
| L330 | Intrinsic Si:- | [100] | 4" | 500 | P/E | FZ 13,000-20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish |
| 6133 | Intrinsic Si:- | [100] | 4" | 300 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
| 6061 | Intrinsic Si:- | [100] | 4" | 500 | P/E | FZ >10,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| E775 | Intrinsic Si:- | [100] | 4" | 615 ±10 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
| G412 | Intrinsic Si:- | [100] | 4" | 800 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
| 6297 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >2,000 | SEMI Prime, 1Flat, Empak cst |
| 6243 | P/B | [100] | 4" | 1,000 | P/P | 200-700 | Prime, NO Flats, Empak cst |
| 5584 | P/B | [100] | 4" | 3,000 | P/E | 46-50 | SEMI Prime, 1Flat, Individual cst, Group of 6 wafers |
| I808 | P/B | [100] | 4" | 500 | P/P | 10-20 | SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly |
| K483 | P/B | [100] | 4" | 515 ±10 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst |
| 5949 | P/B | [100] | 4" | 750 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst |
| 6159 | P/B | [100] | 4" | 1,000 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 6230 | P/B | [100] | 4" | 1,000 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| G511 | P/B | [100] | 4" | 300 | P/P | 8-12 | SEMI TEST - Front-side badly polished, 2Flats, Empak cst |
| S5762 | P/B | [100] | 4" | 610 ±10 | E/E | 8-12 | 1Flat at [100], Empak cst |
| F060 | P/B | [100] | 4" | 300 | P/P | 5-10 | SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re-polished for extra fee |
| F994 | P/B | [100] | 4" | 300 | P/P | 5-10 {6-7} | SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers |
| 6274 | P/B | [100] | 4" | 300 | P/P | 5-10 | SEMI Prime, 2Flats, Empak cst |
| 5727 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI TEST (in Opened cassette), 2Flats, Empak cst |
| 6059 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI Prime, 2Flats, Empak cst |
| C649 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI TEST (with bad surface), 1Flat, Empak cst |
| D819 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal |
| E136 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee |
| C815 | P/B | [100] | 4" | 380 | BROKEN | 5-10 | Broken P/E Wafers, 1Flat, in Empak |
| D259 | P/B | [100] | 4" | 380 | BROKEN | 5-10 | Broken P/E Wafers, 2Flats, in Empak |
| D649 | P/B | [100] | 4" | 380 | BROKEN | 5-10 | Broken (largest piece is ~30%), 1Flat, in Empak |
| 6223 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| B247 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI, 2Flats, Empak cst |
| E326 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers |
| H452 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI Test, Dirty and scratched, 2Flats, Empak cst |
| 6331 | P/B | [100] | 4" | 1,000 | P/E | 5-10 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 6313 | P/B | [100] | 4" | 525 | P/E | 4.1-4.5 | Prime, NO Flats, Empak cst |
| 5644 | P/B | [100] | 4" | 250 ±10 | P/P | 1-5 {4.1-4.7} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 6273 | P/B | [100-4.0°] ±0.5° | 4" | 275 | P/E | 1-30 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 5997 | P/B | [100] | 4" | 300 | P/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
| E485 | P/B | [100-4° towards[110]] ±0.5° | 4" | 300 | P/E | 1-10 ohm-cm | SEMI Test, 2Flats, Empak cst, Wafers with pits |
| M334 | P/B | [100] | 4" | 381 ±5 | P/P | 1-30 | SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst |
| G189 | P/B | [100] | 4" | 475 | P/E | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth |
| 5440 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188. |
| B742 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319. |
| C742 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319. |
| J440 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188. |
| K440 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188. |
| L440 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188. |
| 6197 | P/B | [100] | 4" | 525 | P/P | 1-5 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| F307 | P/B | [100] | 4" | 525 | P/P | 1-10 ohm-cm | SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers |
| G672 | P/B | [100] | 4" | 525 | P/P | 1-10 ohm-cm | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee |
| S216 | P/B | [100] | 4" | 525 | P/P | 1-5 | SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches |
| 6200 | P/B | [100-4° towards[110]] ±0.5° | 4" | 525 | P/E | 1-20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 6242 | P/B | [100] | 4" | 525 | P/E | 1-5 | SEMI Prime, 1Flat, Empak cst |
| F485 | P/B | [100] | 4" | 525 | P/E | 1-20 | Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst |
| 4959 | P/B | [100] | 4" | 525 | NP/PN | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides |
| D959 | P/B | [100] | 4" | 525 | NOxP/POxN | 1-10 ohm-cm | SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst |
| S5841 | P/B | [100-0.5°] | 4" | 590 ±10 | E/E | 1-3 | SEMI Prime, 2Flats |
| 6347 | P/B | [100] | 4" | 1,200 | P/P | 1-15 | SEMI Prime, 2Flats, Empak cst |
| N347 | P/B | [100] | 4" | 1,200 | P/P | 1-15 | Prime, 1Flat, Empak cst |
| 4829 | P/B | [100] | 4" | 2,100 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers |
| 3996 | P/B | [100] | 4" | 3,000 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers |
| 6058 | P/B | [100] | 4" | 3,000 | P/E | 1-30 | SEMI, 2Flats, Individual cst |
| B594 | P/B | [100] | 4" | 3,175 | P/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
| K588 | P/B | [100] | 4" | 3,175 | P/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
| 2586 | P/B | [100] | 4" | 3,200 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers |
| 6015 | P/B | [100] | 4" | 4,000 | P/P | 1-100 | SEMI Prime, 2Flats, Individual cst |
| 5737 | P/B | [100] | 4" | 890 ±15 | P/P | 0.5-10.0 | SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst |
| 6348 | P/B | [100] | 4" | 525 | P/E | 0.1-0.2 | SEMI Prime, 2Flats, Empak cst |
| 2612 | P/B | [100] | 4" | 350 | P/E | 0.095-0.130 | SEMI Prime, 2Flats, Empak cst |
| 3031 | P/B | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers |
| 5833 | P/B | [100] | 4" | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
| G780 | P/B | [100] | 4" | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
| 5771 | P/B | [100-4°] ±0.5° | 4" | 380 ±10 | P/P | 0.01-0.02 | SEMI Prime, Empak cst, TTV<2μm |
| 6349 | P/B | [100] | 4" | 525 | P/E | 0.01-0.02 | SEMI, 2Flats, Empak cst |
| T155 | P/B | [100] | 4" | 525 | P/POx | 0.008-0.020 | SEMI Prime, 2Flats, Empak cst |
| 5419 | P/B | [100] | 4" | 300 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| I135 | P/B | [100] | 4" | 500 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Wafers with striation marks |
| 6073 | P/B | [100] | 4" | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm |
| 6209 | P/B | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| K173 | P/B | [100] | 4" | 525 | BROKEN | 0.001-0.005 | Broken wafer (shattered into many pieces), 1Flat |
| 5420 | P/B | [100] | 4" | 800 | C/C | 0.001-0.005 | SEMI, 2Flats, Empak cst, With striation marks |
| 6214 | P/B | [100] | 4" | 2,000 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers |
| S5774 | P/B | [100] | 4" | ? | P/P | ? | SEMI Test, 2Flats, Empak cst |
| D939 | P/B | [100] | 4" | 375 | P/E | <0.0015 {0.00091-0.00099} | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
| S5002 | n-type Si:P | [100] | 4" | 310 ±10 | P/P | 20-30 | SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee |
| 5892 | n-type Si:P | [100] | 4" | 350 | P/P | 20-23 | SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst |
| G827 | n-type Si:P | [100] | 4" | 525 | P/E | 10-30 | SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers |
| 5924 | n-type Si:P | [100] | 4" | 5,800 | P/E | 10-100 | SEMI Prime, 2Flats, Individual cst |
| D389 | n-type Si:P | [100] | 4" | 5,800 | P/E | 10-100 | SEMI Prime, 2Flats, Individual cst |
| 5337 | n-type Si:P | [100-4° towards[111]] | 4" | 525 | P/E | 11-Sep | SEMI Prime, 2Flats, Empak cst |
| 5849 | n-type Si:P | [100] | 4" | 525 | P/E | 11-Jul | SEMI Prime, 2Flats, Empak cst |
| P849 | n-type Si:P | [100] | 4" | 525 | P/E | 11-Jul | SEMI Prime, 2Flats, Empak cst |
| 5171 | n-type Si:P | [100] | 4" | 224 | P/E | 5-10 | SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers |
| D033 | n-type Si:P | [100] | 4" | 224 | BROKEN | 5-10 | SEMI Test, 2Flats, Empak cst |
| L758 | n-type Si:P | [100] | 4" | 500 | P/P | 3-6 | SEMI Prime, 2Flats, Empak cst |
| D830 | n-type Si:P | [100] | 4" | 350 ±10 | P/P | 3-5 | SEMI Prime, 2Flats, Empak cst |
| E830 | n-type Si:P | [100] | 4" | 350 | P/P | 3-5 | SEMI Test, 2Flats, Empak cst, Haze, pits, scratches |
| B752 | n-type Si:P | [100] | 4" | 450 | C/C | 3-5 | SEMI Prime, 2Flats, Empak cst |
| 6032 | n-type Si:P | [100] | 4" | 525 | P/E | 3-9 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| C925 | n-type Si:P | [100] | 4" | 500 ±10 | P/P | 5-Feb | SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers |
| 6224 | n-type Si:P | [100] | 4" | 525 ±10 | P/P | 6-Feb | SEMI Prime, 1Flat, Empak cst |
| S5920 | n-type Si:P | [100] | 4" | 250 ±5 | P/P | 1-100 | SEMI Prime, TTV<3μm, Empak cst |
| 5322 | n-type Si:P | [100] | 4" | 280 ±2 | P/P | 1-10 ohm-cm | SEMI Prime, 1Flat, Empak cst, TTV<2μm |
| O173 | n-type Si:P | [100] | 4" | 280 | P/P | 1-5 | SEMI Prime, 2Flats, Empak cst |
| 5772 | n-type Si:P | [100] ±0.2° | 4" | 400 ±10 | P/P | 1-3 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 6001 | n-type Si:P | [100] | 4" | 400 ±10 | P/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| I762 | n-type Si:P | [100] ±1° | 4" | 400 ±10 | P/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| J762 | n-type Si:P | [100] ±1° | 4" | 400 ±10 | P/P | 1-10 ohm-cm | SEMI Test, 2Flats, Empak cst, TTV<5μm |
| 5903 | n-type Si:P | [100] | 4" | 400 | P/E | 6-Jan | SEMI Prime, 2Flats, Empak cst |
| S5763 | n-type Si:P | [100] ±1° | 4" | 465 ±10 | E/E | 1-3 | SEMI, 1Flat, Empak cst |
| 6246 | n-type Si:P | [100] | 4" | 500 ±10 | P/P | 1-100 | SEMI, 2Flats, Empak cst |
| F826 | n-type Si:P | [100] | 4" | 10,000 | E/E | 1-100 | SEMI Test, 2Flats, Individual cst |
| 6082 | n-type Si:P | [100] | 4" | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst |
| 6158 | n-type Si:P | [100] | 4" | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst |
| P243 | n-type Si:P | [100] | 4" | 300 | P/E | 0.29-0.31 | SEMI Prime, 2Flats, Empak cst |
| 6134 | n-type Si:P | [100] | 4" | 200 | P/P | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched |
| E134 | n-type Si:P | [100] | 4" | 200 | P/P | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Both sides with scratches |
| F134 | n-type Si:P | [100] | 4" | 200 | P/E | 0.10-0.15 | SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish |
| E031 | n-type Si:Sb | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst |
| 5899 | n-type Si:Sb | [100] | 4" | 305 ±3 | P/P | 0.010-0.025 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
| 6138 | n-type Si:Sb | [100] | 4" | 525 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| F138 | n-type Si:Sb | [100] | 4" | 525 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 6304 | n-type Si:As | [100] | 4" | 525 | P/E | 0.0025-0.0035 | SEMI Prime, 2Flats, Empak cst |
| J304 | n-type Si:As | [100] | 4" | 525 | P/E | 0.0025-0.0035 | SEMI Prime, 2Flats, Empak cst |
| U671 | n-type Si:As | [100] | 4" | 545 | E/E | 0.002-0.004 | SEMI, 1Flat, Empak cst |
| F562 | n-type Si:As | [100] | 4" | 525 | PlyAP/E | 0.001-0.005 | With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, |
| 5677 | n-type Si:As | [100] | 4" | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
| F219 | n-type Si:As | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Test (Chipped edge), 2Flats, Empak cst |
| F734 | n-type Si:As | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| E720 | n-type Si:As | [100] | 4" | 550 ±10 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
| 5029 | P/B | [100] | 4" | 380 | OxP/EOx | 5-10 | SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick |
| D234 | n-type Si:P | [100] | 4" | 500 | P/P | FZ >5,000 | Prime, NO Flats, Empak cst |
| 5198 | n-type Si:P | [100] | 4" | 800 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
| 5798 | n-type Si:P | [100] | 4" | 800 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat at [100], TTV<5μm, Empak cst |
| F837 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 198-200 | SEMI Prime, 2Flats, Empak cst |
| E099 | n-type Si:P | [100-6°] ±0.5° | 4" | 325 | P/P | FZ 1-10 | SEMI Prime, 2Flats, Empak cst |
| F266 | Intrinsic Si:- | [100] | 4" | 300 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| F103 | Intrinsic Si:- | [100] | 4" | 525 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
| 6103 | Intrinsic Si:- | [100] | 4" | 525 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| H412 | Intrinsic Si:- | [100] | 4" | 650 | P/P | FZ >10,000 | SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm |
| 16L | P/B | [100] | 4" | 300 | P/E | 800-5,400 | SEMI Prime, 1Flat, Empak cst |
| 15W2 | P/B | [100] | 4" | 500 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst |
| S5755 | P/B | [100] | 4" | 1,500 | P/P | >10 | SEMI Prime, 2Flats, TTV<2μm, Empak cst, |
| 21F | P/B | [100] | 4" | 3,000 | P/E/P | 10-15 | SEMI Prime, 1Flat, Individual cst |
| 16P1 | P/B | [100-6°] | 4" | 250 | P/E | 8-12 | SEMI Prime, 2Flats, Empak cst |
| 15U2 | P/B | [100] | 4" | 1,000 | P/E | 6-7 | SEMI Prime, 2Flats, Empak cst |
| 21Q1 | P/B | [100] | 4" | 1,600 | P/P | ~6 | SEMI Prime, 1Flat, Individual cst |
| 16F | P/B | [100-6°] | 4" | 525 | P/E | 3-6 | SEMI Prime, 2Flats, Empak cst |
| S5793 | P/B | [100] | 4" | 500 | P/P | 2-10 | SEMI Prime, 2Flats, Empak cst |
| 1.60E+04 | P/B | [100] | 4" | 200 | P/P | 1-20 | SEMI Prime, 1Flat, Empak cst |
| H684 | P/B | [100] | 4" | 200 | P/P | 1-5 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
| 15V2 | P/B | [100] | 4" | 250 | P/E | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
| 16R3 | P/B | [100] | 4" | 300 | P/E/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
| 16H2 | P/B | [100-10°] | 4" | 300 | P/E | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
| 16C1 | P/B | [100] | 4" | 500 | P/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
| S5750 | P/B | [100] | 4" | 500 | P/P | 2-10 | SEMI Prime, 2Flats, Empak cst |
| 16B2 | P/B | [100-6°] | 4" | 525 | P/E | 1-100 | SEMI Prime, 1Flat, Empak cst |
| 5778 | P/B | [100] ±1° | 4" | 480 | P/P | 0.1-1.0 | SEMI Prime, TTV<3μm, Empak cst |
| S5809 | P/B | [100-4°] ±0.5° | 4" | 381 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 17U1 | P/B | [100] | 4" | 800 | P/EP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
| 20W2 | P/B | [100] | 4" | 3,100 | P/P | CZ 0.006-0.009 | SEMI Prime, 2Flats, Individual cst |
| 17V1 | P/B | [100-6°] | 4" | 525 | P/E | 0.0042-0.0047 | SEMI Prime, 2Flats, Empak cst |
| J772 | P/B | [100] | 4" | 150 ±15 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<2μm |
| 16Y2 | n-type Si:P | [100] | 4" | 200 | P/P | 49-57 | SEMI Prime, 2Flats, Empak cst |
| 16Z6 | n-type Si:P | [100] | 4" | 400 | P/E | 32-70 | SEMI Prime, 2Flats, Empak cst |
| 18S1 | n-type Si:P | [100] | 4" | 400 | P/P | 17-19 | Prime, NO Flats, Empak cst |
| 16V4 | n-type Si:P | [100] | 4" | 700 | P/E | 14-18 | Prime, NO Flats, Empak cst |
| 18U2 | n-type Si:P | [100] | 4" | 250 | P/E | 11-13 | SEMI Prime, 2Flats, Empak cst |
| 18V1 | n-type Si:P | [100] | 4" | 400 | P/P | 10-18 | SEMI Prime, 2Flats, Empak cst |
| 16T1 | n-type Si:P | [100] | 4" | 525 | P/E | 5-10 | SEMI Prime, 1Flat, Empak cst |
| 16X3 | n-type Si:P | [100] | 4" | 259 | P/P | 3-5 | SEMI Prime, 2Flats, Empak cst |
| R610 | n-type Si:P | [100] | 4" | 475 | P/P | 1-100 | SEMI Prime, 2Flats, Empak cst, TTV<2μm |
| J066 | n-type Si:P | [100] | 4" | 500 | P/P | 1-100 | SEMI Prime, 2Flats, Empak cst, TTV<1μm, With Lasermark |
| 5777 | n-type Si:P | [100] | 4" | 525 ±10 | P/P | 1-100 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
| 18Q1 | n-type Si:P | [100-4°] | 4" | 525 | P/E/P | 1-10 ohm-cm | SEMI Prime, 2Flats, Empak cst |
| 16U2 | n-type Si:P | [100-2°] | 4" | 525 | P/E | >1 | SEMI Prime, 2Flats, Empak cst |
| L353 | n-type Si:P | [100] | 4" | 600 | P/P | 1-100 | SEMI Prime, 2Flats, TTV<2μm, Bow<20μm, Warp<30μm, Empak cst |
| 17C2 | n-type Si:P | [100] | 4" | 1,000 | P/P | 1-20 | SEMI Prime, 2Flats, Empak cst |
| 21S3 | n-type Si:P | [100] | 4" | 2,500 | P/P | 1-100 | SEMI Prime, 2Flats, Individual cst |
| 18L1 | n-type Si:Sb | [100] | 4" | 450 | P/E | ~0.03 | SEMI Prime, 1Flat, Empak cst |
| 18H1 | n-type Si:Sb | [100] | 4" | 400 | P/E | ~0.02 | SEMI Prime, 2Flats, Empak cst |
| T169 | n-type Si:Sb | [100] ±0.2° | 4" | 250 | P/P | 0.01-0.05 | SEMI Prime, 2Flats, Empak cst |
| K725 | n-type Si:Sb | [100] | 4" | 310 ±15 | P/P | 0.010-0.025 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
| 18K1 | n-type Si:Sb | [100] | 4" | 600 | P/E | 0.01-0.03 | Strange Flats |
| 21V | n-type Si:Sb | [100-4°] | 4" | 1,500 | P/E/P | 0.005-0.030 | SEMI Prime, 2Flats, Empak cst |
| 20X1 | n-type Si:Sb | [100] | 4" | 1,500 | P/E/P | 0.001-0.030 | SEMI Prime, 2Flats, Empak cst |
| 17H1 | Intrinsic Si:- | [100] | 4" | 525 | P/E | 400-1,000 | SEMI Prime, 1Flat, Empak cst |
What Are (100) Oriented Silicon Wafers Used For?
In semiconductor research and manufacturing, (100) oriented silicon wafers are widely used due to their favorable properties for various applications. Here are some key uses:
1. CMOS and Integrated Circuits (ICs)
- Most commercial silicon-based CMOS devices, microprocessors, and memory chips are built on (100) wafers.
- The (100) orientation allows for easier fabrication of transistor structures and better dopant diffusion control.
2. Microelectromechanical Systems (MEMS)
- Many MEMS devices, such as accelerometers, gyroscopes, and pressure sensors, are fabricated on (100) silicon wafers due to their well-understood mechanical and etching properties.
3. Photovoltaics (Solar Cells)
- High-efficiency silicon solar cells, including monocrystalline solar cells, are often fabricated on (100) wafers because they provide good electrical properties and are easier to process.
4. Thin-Film Deposition and Oxidation
- (100) silicon wafers provide uniform oxide growth, making them ideal for thermal oxidation used in gate dielectrics and passivation layers.
- They also offer good adhesion properties for thin films deposited using techniques like CVD, PVD, and ALD.
5. Epitaxial Growth
- (100) wafers are the standard for epitaxial silicon growth, where a high-quality crystalline silicon layer is grown on a substrate for advanced electronic applications.
6. Anisotropic Wet Etching
- The (100) orientation is commonly used in anisotropic wet etching with KOH or TMAH, where it etches faster than (111) planes, leading to well-defined, sloped sidewalls.
- This property is useful for fabricating trenches, cavities, and microfluidic channels.
7. Optoelectronic Devices
- Some optoelectronic devices, such as photodetectors and infrared sensors, use (100) wafers due to their compatibility with silicon-based fabrication processes.
Overall, (100) silicon wafers dominate the semiconductor industry because of their favorable mechanical, electrical, and processing characteristics, making them ideal for integrated circuits, MEMS, and other advanced technologies.