Sapphire Wafers for Bragg Reflections in XRD
Sapphire Substrates In Stock
Researchers rejoice! We have a large inventory of sapphire substrates in stock. Below is just a few of what's available.
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Sapphire Wafer Packaging
Please see below for how very secure our sapphire wafer packaging is. 2 spring (claw) on (Spring 2# ) and below （Spring 1#）the wafer to hold the wafer no shifting in the box.
Typical Single Wafer Carrier
Sapphire Semiconductor Substrates are available in all Orientations
Orientations include
Sapphire substrates are available in various shapes (circular, rectangle, or square), from a few mm up to 200mm in size, and finishes according to customer specification. Primary flats(as per industry standards) are provided on circular substrates for orientation purposes; secondary flats are available on request. Substrate thickness' range from 0.013" (0.25mm) to 0.025" (0.675mm), depending on your particular application requirements.
We have wafers in stock!
The sapphire wafers have a high purity >99.996%. See below for impurity analysis for Al2O3 sapphire windows.
Sapphire Wafers for Cryogenic Design
Researcher:
As we are working on cryogenic design. Could you please provide thermal behavior and data file for the sapphire substrate so that we can simulate and use in the fabrication.
UniversityWafer, Inc. Replied:
Pls see below for all the property of the sapphire wafer
" Dielectric properties and optical properties :
Sr. No. Property Value
1 Material 99.996% pure Al2O3 (Alumina)
2 Material class according to DIN EN 60672 C795
3 Density 3.73 g/cc
4 Coefficient of thermal expansion
100° – 200° C 6.0 – 8.0 * 10 -6 /K
100° – 300° C 6.0 – 8.0 * 10 -6 /K
100° – 600° C 6.7 – 8.7 * 10 -6 /K
100° – 800° C 7.0 – 9.0 * 10 -6 /K
5 Dielectric constant (10 MHz to 1 GHz) 8.3 – 11.3
6 Dielectric loss factor (10 MHz to 1 GHz) ≤ 5 * 10 -3
7 Breakdown field ≥ 15 kV/mm
8 E-Modulus ≥ 300 GPa
9 Thermal conductivity at 20° C ≥ 22 W/m K
10 Volume resistivity at
20° C ≥1013 Ω-cm
200° C ≥1011 Ω-cm
400° C ≥109 Ω-cm
600° C ≥107 Ω-cm
11 Water absorption ≤ 0.1%
12 Light transmission characteristics: T>/=80% (0.3～5μm)
Refractive index: no =1.768 ne =1.760
Sapphire Ingot Grow Methods
We grow are sapphire wafers using several methods
- Czochralski (CZ) - process is known to be more efficient for c-axis sapphire substrate production.
- Heat Exchanger Method (HEM) - Used to grow sapphire crystal in volume.
- Kyropoulos (KY) - grows high quality sapphire but requires an enormous amount of electricity.
- Edge defined, Film-fed (EFG) - FG technique. A crystal growth process to manufacture more than 10 crystals at one time up to 1.5mm thick per crystal using multi-tip EFG
Below is an example of pricing for the different growth methods.
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CZ Grown Sapphire Substrates
CZ 2", 430 um, double side polished, C plane +/- 0.5 degree,Qty is
$15.86usd/ea for 25 wafers
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HEM Grown Sapphire Substrates
2", 430 um, double side polished, C plane +/- 0.5 degree,Qty is 50.
$15.86usd/ea
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KY Grown Sapphire Substrates
2", 430 um, double side polished, C plane +/- 0.5 degree,Qty is 50.
$11.86usd/ea
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EFG Grown Sapphire Substrates
2", 430 um, double side polished, C plane +/- 0.5 degree,Qty is 50.
$11.86usd/ea
Z-cut Sapphire substrates [Z-cut / C-axis / (0001)]
10x10 mm, thickness 500 micron,
double-side polished
Surface roughness:<5A
Quantity: 20 pieces.
Sapphire grown using the CZ, HEM or KY methods is used for increasing and expand the production, capacity. EFG are usually used for small volume production.
Let us know if you ever receive a better price! We will beat it!
Buy Sapphire Wafers Online and SAVE!
50.8mm 430um SSP and DSP C-M 0.2 Deg
50.8mm 100um SSP and DSP C-plane off to M Plane 0.2 Deg
50.8mm - Other specs and orienations available
100mm 650um SSP
100mm MECH GRADE - LOW PRICE!
Other diameters from but not limited to 10mm x 10mm, 76.2mm, 150mm and 200mm.
Sapphire Wafer Products
Sapphire semiconductor substrates are manufactured at Sapphire Products from high quality optical grade Czochralski sapphire. Our integrated facilities allow regulation of the production of substrates from crystal growth to fabrication, and to accommodate special requests on very short notice.
GaN on Sapphire SECTION BLUE LED SUBSTRATES
Sapphire Products is a leading provider of high quality sapphire substrates to the expanding Gallium Nitride LED based market. Substrate tolerances and surface finish are keys to Gallium Nitride device production and yield. Sapphire Products sets the standards for flatness and surface finish.Our strong product development team uses industry standard measurement techniques, such as Atomic Force Microscopy (AFM), X-ray rocking curves and surface analysis to study surface and crystalline quality of substrates. C-axis [0001] wafers precisely oriented to within ± 0.25° and primary flat tolerances to ± 0.5° are available in 2" diameter. Other sapphire orientations, misoriented substrates, and wafer tolerances are available.
Sapphire Wafers for Dropcasting Materials
A scientists asked the following:
" I am looking for a sapphire substrate for optical characterization (high transmission) by dropcasting materials onto a wafer. The 10 x 10 mm wafer is slightly too small for my application. Is there any possibility of obtaining several 0.5 x 0.5 in (or 12.5 x 12.5 mm) wafers for this application?"
Maximum transmission across 0.2 – 5 um. Other specs as listed for the 10 x 10 mm should be fine. For quantity, what would be the cost for 5, 10, and 20 respectively?
UniversityWafer, Inc. Quoted:
These are optically transparent sapphire
Sapphire Optical Transparent Glass Wafer
DSP surface
size: 12.5x12.5x0.5mm
Please contact us for pricing.
We can guarantee the transmission could be over 80% from 260~3000nm spectrum range.
Sapphire Wafers for MOCVD growth of Gallium Nitride (GaN) Thin-Films
Clients requests sapphire substrates for to grow MOCVD Growth.
Pls see below for the offer,and see the attached for the manufacturer details and brochures
1. Crystal Materials: 99.995 (or equivalent), High Purity, Monocrystalline Al2O3.
2. Orientation: M-plane (1-100) Patterned Sapphire Substrate (PSS)
3: Diameter: 50.8 mm ± 0.1 mm (2 inch standard diameter).
4. Thickness: 430 μm ± 25 μm (or equivalent).
5. Primary Orientation Flat (OF): A-plane (1 1 -2 0) ± 0.2° (or equivalent).
6. Secondary Orientation Flat: NO
7. Front Surface: Epi-polished, Ra 0.3 nm (by AFM) (or better).
8. Back Surface: Fine-ground, Ra =0.5 - 1.2 um (or equivalent).
9. PSS Shape: Cone
10. PSS Dimension: Height 1.5 um, Diameter 1.2-1.8 um, Pitch 1.2-1.8 um.
11. Packaging: Class 100 clean room and vacuum packaging.
12. Packaging Quantity: 25 pieces per cassette.
13. Product Origin: Taiwan . see attached for the manufacturer details and brochures.
14. M-PSS wafers are to be used for MOCVD growth of gallium nitride (GaN) thin-films.
15. Qty. [50 Unit ]
Pelase contact us for pricing.