M-plane sapphire substrates are non-polar single-crystal Al₂O₃ wafers widely used for epitaxial growth of gallium oxide (Ga₂O₃), gallium nitride (GaN), aluminum nitride (AlN), and other advanced semiconductor materials. UniversityWafer supplies epi-ready M-plane sapphire wafers in multiple diameters, thicknesses, orientations, and custom miscut angles for MOCVD, MBE, photonics, RF electronics, UV optoelectronics, and next-generation power device research.
A university researcher requested a quote for M-plane sapphire substrates for use in advanced semiconductor research:
Research Inquiry:
I'm interested in purchasing M-plane sapphire wafers for epitaxial growth of gallium oxide using MOCVD. I would like pricing for quantities of 10–20 wafers. Do you offer miscut M-plane sapphire substrates with 2° and 4° off-axis orientations? Additionally, what RMS surface roughness values are available for your epi-ready M-plane sapphire wafers?
Reference #276030 for pricing and technical specifications.
Get Your M-Plane Sapphire Wafer Quote FAST! Or, Buy Online and Start Researching Today!
UniversityWafer supplies M-plane sapphire wafers for gallium oxide (Ga₂O₃), gallium nitride (GaN), aluminum nitride (AlN), and other advanced semiconductor materials. Our sapphire substrates are available in multiple diameters, thicknesses, orientations, and surface finishes to support research, prototyping, and production applications.
We offer epi-ready sapphire wafers, custom miscut angles, precision polishing, and low surface roughness specifications for demanding epitaxial growth requirements. M-plane sapphire is commonly selected for MOCVD and MBE growth because its non-polar orientation can improve crystal quality and device performance.
Whether you need a single wafer for laboratory testing or larger quantities for university and industrial research programs, UniversityWafer can provide high-quality M-plane sapphire substrates with fast turnaround times.
UniversityWafer supplies high-quality M-plane sapphire substrates for semiconductor research, epitaxial growth, photonics, and advanced materials development. Our sapphire wafers are available in multiple diameters, thicknesses, and surface finishes, including epi-ready polished surfaces suitable for demanding research applications.
M-plane sapphire (Al₂O₃) is a non-polar sapphire crystal orientation commonly used as a substrate for the growth of gallium nitride (GaN), gallium oxide (Ga₂O₃), aluminum nitride (AlN), and other compound semiconductor materials. Unlike conventional C-plane sapphire, M-plane sapphire reduces polarization effects, making it attractive for advanced optoelectronic and high-power electronic devices.
The M-plane orientation corresponds to the (10-10) crystallographic plane and offers unique surface properties that can improve epitaxial film quality, crystal alignment, and device performance. Researchers frequently select M-plane sapphire for applications requiring anisotropic crystal behavior and reduced internal electric fields.
M-plane sapphire wafers are widely used as substrates for MOCVD growth, molecular beam epitaxy (MBE), and other thin-film deposition processes. The orientation supports the growth of high-quality semiconductor layers used in:
Researchers often request miscut M-plane sapphire substrates with precise off-axis orientations such as 2° or 4° miscuts to optimize surface morphology and crystal growth characteristics.
UniversityWafer offers epi-ready M-plane sapphire wafers with low surface roughness and precision polishing. Typical applications include research involving gallium oxide power devices, GaN electronics, UV photonics, quantum technologies, and next-generation semiconductor materials.
If your project requires a specific diameter, thickness, surface finish, orientation tolerance, or miscut angle, our engineering team can help identify the best sapphire substrate for your application.