Stochiometric Nitride on Silicon Wafer for R & D 

Stoichiometric LPCVD nitride on silicon wafers provides excellent electrical insulation, chemical resistance, and low defect density for MEMS fabrication, KOH etching masks, oxidation barriers, and microelectronics research. UniversityWafer supplies silicon nitride wafers with standard, low-stress, and super low-stress films in multiple diameters and thicknesses for semiconductor process development and advanced device applications.

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Stoichiometric LPCVD Nitride on Silicon Wafers

Stoichiometric LPCVD silicon nitride (Si3N4) is a high-quality dielectric film widely used in semiconductor fabrication, MEMS devices, and microfluidic applications. Nitride-coated silicon wafers provide excellent chemical resistance, low pinhole density, and superior insulating properties, making them ideal for advanced research and process development.

Stoichiometric LPCVD nitride is commonly used as a KOH etch mask, oxidation barrier, surface passivation layer, and electrical insulator. Its high mechanical strength and chemical stability make it suitable for pressure sensors, membranes, cantilevers, and other MEMS structures requiring precise film properties.

UniversityWafer supplies LPCVD nitride on silicon wafers in multiple diameters and film thicknesses, including standard, low-stress, and super low-stress silicon nitride coatings for research and production applications.

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What is Stoichiometric LPCVD Nitride?

Stoichiometric LPCVD silicon nitride (Si3N4) is a high-quality dielectric film deposited on silicon wafers using low-pressure chemical vapor deposition. It offers excellent electrical insulation, chemical resistance, and mechanical stability, making it ideal for MEMS fabrication, oxidation masking, passivation layers, and KOH etch masks.

Because of its uniform thickness and low defect density, stoichiometric LPCVD nitride is widely used throughout semiconductor manufacturing and research. Nitride-coated wafers are frequently utilized in sensors, microfluidics, pressure membranes, and integrated circuit fabrication.

Applications of LPCVD Silicon Nitride

  • KOH etching masks for anisotropic silicon etching
  • MEMS devices and pressure sensors
  • Electrical insulation layers
  • Oxidation masking during thermal processing
  • Surface passivation
  • Microelectronics and integrated circuits
  • Microfluidic devices
  • Thin-film semiconductor research

Available Nitride Thicknesses

UniversityWafer supplies nitride on silicon wafers with several LPCVD film thicknesses to meet different process requirements:

  • 100nm Stoichiometric LPCVD Nitride
  • 300nm Standard LPCVD Nitride
  • 620nm LPCVD Nitride
  • 100nm Low Stress LPCVD Nitride
  • 100nm Super Low Stress LPCVD Nitride
  • 200nm Low Stress Nitride
  • 2,000nm Low Stress LPCVD Nitride

Available Silicon Wafer Sizes

Our inventory includes prime-grade and test-grade silicon nitride wafers in multiple diameters:

  • 50.8mm (2 inch)
  • 76.2mm (3 inch)
  • 100mm (4 inch)
  • 150mm (6 inch)

Common wafer specifications include <100> orientation, boron or phosphorus doping, SSP and DSP finishes, and resistivities ranging from 0.001 to 100 Ω-cm.

In-Stock Nitride on Silicon Inventory

Browse our in-stock silicon nitride wafer inventory for a wide selection of stoichiometric and low-stress LPCVD nitride substrates suitable for semiconductor processing and research applications.

ID Diam Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Grade

100nm Stoichiometric LPCVD Nitride
3307 50.8mm P B <100> 0.001-0.005 270um SSP Prime
3538 50.8mm P B <100> 1-10 280um SSP Prime
3540 50.8mm P B <100> 1-10 280um SSP Prime
3546 50.8mm N P <100> 1-10 280um SSP Prime
3548 50.8mm N P <100> 1-10 280um SSP Prime
3554 76.2mm P B <100> 1-10 380um SSP Prime
3551 50.8mm N P <100> 1-10 280um SSP Prime
3556 76.2mm P B <100> 1-10 380um SSP Prime
3582 150mm P B <100> 1-100 625um SSP Prime
1911 100mm P B <100> 1-10 500um SSP Prime
1912 100mm P B <100> 0.001-0.005 500um SSP Prime
3580 150mm P B <100> 1-100 625um SSP Prime

300nm of Standard LPCVD Nitride
3541 50.8mm P B <100> 1-10 280um SSP Prime
3539 50.8mm P B <100> 1-10 280um SSP Prime
3547 50.8mm N P <100> 1-10 280um SSP Prime
3544 50.8mm P B <100> 1-10 280um SSP Prime
3549 50.8mm N P <100> 1-10 280um SSP Prime
3552 50.8mm N P <100> 1-10 280um SSP Prime
3555 76.2mm P B <100> 1-10 380um SSP Prime
3557 76.2mm P B <100> 1-10 380um SSP Prime
3563 76.2mm N P <100> 1-10 380um SSP Prime
3560 76.2mm P B <100> 1-10 380um SSP Prime
3568 76.2mm N P <100> 1-10 380um SSP Prime
1913 100mm P B <100> 1-10 500um SSP Prime
3570 100mm P B <100> 1-20 500um SSP Prime
3572 100mm P B <100> 1-20 500um SSP Prime
3583 150mm P B <100> 1-100 625um SSP Prime
3584 150mm P B <100> 1-100 625um SSP Prime
                 
3581 150mm P B <100> 1-100 625um SSP Prime
3565 76.2mm N P <100> 1-10 380um SSP Prime

620nm LPCVD Nitride
3445 50.8mm P B <100> 0-100 500um DSP Prime

2,000nm Low Stress LPCVD Nitride
3542 50.8mm P B <100> 1-10 280um SSP Prime
3550 50.8mm N P <100> 1-10 280um SSP Prime
3553 50.8mm N P <100> 1-10 280um SSP Prime
3569 76.2mm N P <100> 1-10 380um SSP Prime

200nm Low Stress Nitride

3446 76.2mm     <111>   250um DSP Test
3480 76.2mm ANY ANY <100>   250um DSP Test
3558 76.2mm P B <100> 1-10 380um SSP Prime
3566 76.2mm N P <100> 1-10 380um SSP Prime

100nm Low Stress LPCVD Nitride

3564 76.2mm N P <100> 1-10 380um SSP Prime

100nm Super Low Stress LPCVD Nitride
3567 76.2mm N P <100> 1-10 380um SSP Prime
1915 100mm N P <100> 1-10 500um SSP Prime
1917 100mm P B <100> 1-10 500um SSP Prime
1-10
1919 100mm N P <100> 1-10 500um SSP Prime
1-10
1921 100mm P B <100> 1-10 500um SSP Prime
1-10
1922 100mm P B <100> 0.001-0.005 500um SSP Prime
3455 100mm P B <100> 1-10 500 SSP Prime

2,000nm Low Stress LPCVD Nitride
3571 100mm P B <100> 1-20 500um SSP Prime
3573 100mm P B <100> 1-20 500um SSP Prime

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