The Total Thickness Variation (TTV) is the maximum difference in the thickness of a wafer across a given cross-section. The value of TTV is a very important measure for process stability, as well as for improving wafer quality. The TTV can be determined by measuring a wafer at 5 locations and calculating the maximum thickness differences.

Here are some guidelines to improve TTV: (1) make the measurement more accurate and repeatable, and (2) measure the TTV from different angles.

To minimize the TTV, silicon wafers with stock removal typically have a TTV of less than 0.7 mm. The optimal TTV is less than 0.1 mm. Generally, a TTV of less than 0.5 mm is acceptable. But the TTV can be much lower, down to 0.1 m. For this reason, the total thickness variation of silicon wafers should not exceed 20 ppm.

The total thickness variation is the most important parameter for substrate fabrication. In addition to TTV, the total width of the through-wafer wet etching membrane (TWWEM) process can also be affected by TTV. It is crucial to follow the recommended procedures for each step in the wafer fabrication process to ensure the best results possible. Once a manufacturer meets a strict requirement for TTV, the TTV is the best indicator for subsequent device quality assurance.

TTV can be measured using a specialized ADE system. The TTV is a linear thickness variation between the maximum and minimum of a wafer, which is used to measure the flatness of a wafer. It is a good indicator of polish quality. One-half-mom TTV is considered good. It is not an indication of quality. If TTV is too high or too low, it will reduce the yield of the photolithography process.

TTV is an important parameter for glass wafers. The difference between the minimum and maximum thickness of a wafer is the TTV. TTV is the difference between the minimum and maximum thickness of mirrored surfaces. The TTV of a glass wafer is measured in millimeters, and it is important to know the total thickness variation for accurate fabrication. It is very difficult to measure TTV on a thin glass-wafer without a reference flat.

Another important aspect of TTV is flatness. The TTV refers to the difference between the maximum and minimum values of the surface of the wafer. The STIR is the maximum peak-to-valley deviation. In contrast, TTV and STIR are the measurements of the thickness of a semiconductor wafer's local site. A high TTV is defined as a difference between the lowest and highest parts of a wafer.

TTV is a critical parameter for bonded wafers. It provides information about thinning, uniformity and deformation of the stack of wafers. TTV is critical for certain bonded wafer manufacturing processes, as non-planarity leads to problems during lithographic overlay or intermittent electrical contact between metal layers. A good TTV is typically less than one micrometer. However, it is still desirable to measure the TTV of a bonded wafer.

A silicon wafer is an excellent example of a semiconductor device. These devices are widely used in electronics and are extremely durable. They are also made of high-quality material. A semiconductor device can be a valuable asset for companies, but it may not be a viable option without a high-quality standard. In these situations, the TTV of a bonded silicon wafer is an essential parameter. It is a critical parameter for many industries.

A good TTV will be lower than the warp of a silicon wafer. This is beneficial for semiconductor devices. The thickness variation should be less than 50 nm. The lower the TTV, the better. Likewise, TTV should be greater than one millimeter. These differences are a good indication of the shape of a silicon wafer. To make sure that the TTV is lower, the thickness of the silicon wafer must be flat.

TTV is also an important factor for optical windows and substrates. A thin part with a high TTV may be a better choice for optical applications. The average thickness of a product will be greater than its maximum, while the maximum thickness will be thinner. It is important to keep the TTV under a certain range. If it is higher than that, the product will not meet customer specifications. The difference between the two values will be a better indication of the quality of a product.

We have a large selection of Silicon Wafers with TTV less than 1 and 2 microns in stock and ready to ship!

Please email us your specs for an immediate quote! Below are just some of the low ttv wafers that we have in stock.

Item | Qty | Type/Dop | Orient | Dia(mm) | Thck (μm) |
Pol | Resistivity Ωcm |
Specifications |
---|---|---|---|---|---|---|---|---|

S5838 | 12 | P/B | [100] ±1° | 6" | 575 |
DSP |
1-20 | SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<2μm |

S5837 | 25 | n-type Si:P | [100] | 6" | 250 ±5 |
DSP |
1-3 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |

E089 | 2 | n-type Si:P | [100] | 6" | 1,910 ±10 |
DSP |
1-100 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, in stacked trays of 2 wafers |

H240 | 11 | n-type Si:P | [100] | 6" | 725 |
DSP |
1-100 | SEMI notch Prime, Empak cst, TTV<1μm |

H503 | 50 | P/B | [100] | 6" | 735 |
DSP |
FZ >50 |
Prime, 1Flat, Empak cst, TTV<2μm |

S5821 | 17 | P/B | [100] | 6" | 275 |
DSP |
0.01-0.05 | SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |

E324 | 100 | n-type Si:P | [100] | 6" | 725 |
DSP |
5-35 | SEMI Prime, 1 SEMI Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst |

J324 | 3 | n-type Si:P | [100] | 6" | 725 |
DSP |
5-35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, with Laser Mark, Empak cst |

S5594 | 2 | P/B | [100] | 5" | 990 ±8 |
DSP |
1-25 | SEMI Prime, Empak cst, TTV<1μm |

S5597 | 23 | n-type Si:Sb | [100] ±1° | 5" | 1,200 ±10 |
SSP | 0.001-0.025 | SEMI Prime, SEMI notch, TTV<1μm Empak cst |

E804 | 17 | P/B | [100] | 5" | 762 |
DSP |
FZ 2,000-3,000 |
SEMI Prime, 1Flat, Empak cst, TTV<2μm, Bow<10μm, Warp<20μm |

S6284 | 1 | n-type Si:P | [100] ±1° | 4" | 200 ±10 |
DSP |
FZ >1,000 |
SEMI Prime, 1Flat, TTV<1μm, in Empak cst |

D301 | 5 | Intrinsic Si:- |
[100] | 4" | 500 | DSP |
FZ >30,000 |
SEMI Prime, 1Flat, Empak cst, TTV<1μm |

S962 | 5 | Intrinsic Si:- |
[100] | 4" | 525 | DSP |
FZ >20,000 |
SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer |

6356 | 75 | Intrinsic Si:- |
[100] | 4" | 500 | DSP |
FZ >20,000 |
SEMI Prime, 1Flat, Empak cst, TTV<2μm |

5771 | 25 | P/B | [100-4°] ±0.5° |
4" | 380 ±10 |
DSP |
0.01-0.02 | SEMI Prime, Empak cst, TTV<2μm |

5322 | 25 | n-type Si:P | [100] | 4" | 280 ±2 |
DSP |
1-10 | SEMI Prime, 1Flat, Empak cst, TTV<2μm |

4975 | 13 | n-type Si:Sb | [211] ±0.5° |
4" | 1,500 ±15 |
DSP |
0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |

5899 | 10 | n-type Si:Sb | [100] | 4" | 305 ±3 |
DSP |
0.010-0.025 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |

9544 | 125 | n-type Si:Sb | [111-4°] ±0.5° | 4" | 420 |
P/EOx | 0.008-0.018 {0.0138-0.0151} | SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal |

F103 | 10 | Intrinsic Si:- |
[100] | 4" | 525 | DSP |
FZ >20,000 |
SEMI Prime, 1Flat, Empak cst, TTV<1μm |

H412 | 15 | Intrinsic Si:- |
[100] | 4" | 650 |
DSP |
FZ >10,000 |
SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm |

J772 | 25 | P/B | [100] | 4" | 150 ±15 |
DSP |
0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<2μm |

J066 | 10 | n-type Si:P | [100] | 4" | 500 | DSP |
1-100 | SEMI Prime, 2Flats, Empak cst, TTV<1μm, With Lasermark |