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Ultra-Thin Silicon Wafers
Soitec Silicon on Insulator Wafers

Silicon Carbide (SiC) Wafers

 

5x5mm, 6x6mm, 10x10mm 6H wafers and 5x5, 10x10, and 2" diameter 4H wafers in stock.

 

All of these SiC wafers are N-type, resistivity ~0.1-0.01 Ohm.cm

For 4H 1sp wafer, price is $320/each for 10x10 pcs, $160/each for 5x5 pcs,

For 6H 1sp wafer, price is $265/each for 10x10 pcs, $165/each for 5x5 pcs,

 

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Solar Silicon Wafers

Solar Wafers

Below are just some of our Silicon Carbide Wafers

 

No.1

2" 6H N-Type

6H-N 2" dia,

Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:0.02-0.2 Ω·cm

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      327.80

No.2

2" 6H N-Type

6H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT 0.02 ~ 0.2 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      454.45

No.3

2" 4H N-Type

4H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                       D Grade:RT:0.01-0.1 Ω·cm                   D Grade,Bow/Warp/TTV<25um

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      327.80

No.4

2" 4H N-Type

4H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                           B Grade:RT:0.01 - 0.1 Ω·cm                  B Grade,Bow/Warp/TTV<25um

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      454.45

No.5

3" 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen

Orientation :4 degree+/-0.5 degree

Thickness : 350 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:0.01-0.1Ω·cm                    D Grade,Bow/Warp/TTV<35um

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      573.65

No.6

3" 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen

Orientation : 4 degree+/-0.5 degree

Thickness : 350 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:0.01 - 0.1Ω·cm                   B Grade,Bow/Warp/TTV<35um

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      864.20

No.7

3" 4H SI

4H-SI 3" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 350 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

4-10pcs

 $      849.30

No.8

3" 4H SI

4H-SI 3" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 350 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:80 % ≥1E5 Ω·cm

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

4-10pcs

 $   2,354.20

No.9

2" 6H SI

6H-SI 2" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      573.65

No.10

2" 6H SI

6H-SI 2" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:85 % ≥1E5 Ω·cm

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

5-10pcs

 $   1,132.40

No.11

4" 4H N-Type

4H-N 4"dia.(100mm±0.38mm),

Type/ Dopant : N / Nitrogen

Orientation : 4.0°±0.5°

Thickness : 350μm±25μm

D Grade,MPDä100 cm-2                      D Grade,0.01~0.1Ω•cm                         D Grade,TTV/Bow /Warp<45um

 

Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

<4pcs

 $   1,005.75

 

 

 

>=4pcs

 $      923.80

 

 

 

>=10pcs

 $      879.10

 

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