LPCVD and PECVD Silicon Nitride Wafers for MEMS and Semiconductor Research
UniversityWafer, Inc. supplies silicon nitride wafers (SiNx) with Low Pressure Chemical Vapor Deposition (LPCVD) and Plasma-Enhanced Chemical Vapor Deposition (PECVD) films for microelectromechanical systems (MEMS), semiconductor fabrication, wafer processing, dielectric isolation, KOH etching, passivation, and advanced device manufacturing. We stock a wide range of nitride-coated silicon wafers in small and large quantities, allowing researchers to purchase as few as one wafer for prototyping, laboratory testing, and production development.
Our most popular silicon nitride coatings include:
Stoichiometric LPCVD silicon nitride films are widely used as hard masks for potassium hydroxide (KOH) etching, bulk micromachining, reactive ion etching (RIE), oxidation barriers, dielectric layers, and passivation coatings. These thin films are frequently used to define active regions during field oxidation and are compatible with a variety of MEMS, microelectronics, and semiconductor wafer-processing techniques.
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Advantages of Silicon Nitride Thin Films
Silicon nitride provides excellent electrical insulation, chemical resistance, high-temperature strength, oxidation resistance, wear resistance, and low thermal expansion. These properties provide strong thermal-shock resistance and make silicon nitride an important dielectric and structural material for microelectronics, MEMS devices, pressure sensors, temperature sensors, silicon photonics, nanophotonics, microfluidics, and harsh-environment applications.
Low stress and super low stress silicon nitride films are especially useful for suspended membranes, cantilever beams, optical waveguides, photonic integrated circuits, and other microstructures where film stress, wafer bow, and dimensional stability must be carefully controlled.
Bulk Silicon Nitride Materials
Bulk silicon nitride materials are commonly manufactured using several processing methods:
- Reaction Bonded Silicon Nitride (RBSN)
- Hot Pressed Silicon Nitride (HPSN)
- Sintered Silicon Nitride (SSN)
These bulk ceramic materials differ from LPCVD and PECVD silicon nitride thin films deposited on semiconductor wafers. Bulk silicon nitride is generally used for structural and mechanical applications, while deposited SiNx films are widely used for dielectric isolation, passivation, etch masking, photonics, and semiconductor device fabrication.
Custom Silicon Nitride Film Specifications
UniversityWafer, Inc. can supply silicon nitride-coated silicon substrates with custom specifications including film thickness, intrinsic stress, refractive index, deposition method, substrate orientation, resistivity, wafer thickness, surface finish, and wafer diameter.
Custom LPCVD and PECVD film deposition is available for research involving thin-film deposition, plasma processing, MEMS fabrication, optical coatings, wafer-level packaging, sensor development, and semiconductor process integration.
Available Silicon Nitride Wafer Diameters
LPCVD and PECVD silicon nitride films can be deposited on silicon wafers in the following diameters:
- 25.4 mm (1 inch)
- 50.8 mm (2 inch)
- 76.2 mm (3 inch)
- 100 mm (4 inch)
- 150 mm (6 inch)
- 200 mm (8 inch)
- 300 mm (12 inch)
Custom wafer diameters, film thicknesses, stress levels, single-sided or double-sided coatings, and substrate specifications are available upon request for research and development applications.
LPCVD and PECVD Silicon Nitride Wafers in Stock
UniversityWafer, Inc. supplies silicon nitride wafers (SiNx) with LPCVD and PECVD films for microelectromechanical systems (MEMS), semiconductor fabrication, wafer processing, KOH etching, dielectric isolation, passivation layers, and advanced microelectronics manufacturing. We offer small and large quantities and can supply as few as one nitride-coated wafer for research, prototype development, and production.
Available silicon nitride coatings include:
- Stoichiometric LPCVD Silicon Nitride
- Low Stress Silicon Nitride
- Super Low Stress Silicon Nitride
- PECVD Silicon Nitride
- PECVD OxyNitride
- Low Stress PECVD Nitride
- PECVD Oxide
- PECVD Silicon Carbide
Stoichiometric LPCVD Silicon Nitride
Stoichiometric LPCVD silicon nitride provides excellent chemical resistance, dielectric properties, and long-term reliability. It is commonly used as a hard mask for Potassium Hydroxide (KOH) etching, an oxidation barrier, dielectric layer, and passivation coating in semiconductor devices. LPCVD nitride is also widely used for bulk micromachining, reactive ion etching (RIE), field oxidation, MEMS fabrication, and precision wafer processing.
Low Stress Silicon Nitride
Low stress silicon nitride retains the electrical and chemical properties of standard nitride films while minimizing intrinsic film stress. These coatings are widely used for MEMS devices, membranes, cantilever beams, pressure sensors, temperature sensors, microfluidic structures, and other mechanical components that require excellent dimensional stability and mechanical reliability.
Super Low Stress Silicon Nitride
Super low stress silicon nitride has been engineered for applications requiring extremely low intrinsic stress. Film stress can be customized to meet specific requirements, making these wafers ideal for silicon photonics, nanophotonics, MEMS, suspended structures, optical waveguides, photonic integrated circuits, and advanced sensor applications.
PECVD Silicon Nitride
Plasma-Enhanced Chemical Vapor Deposition (PECVD) silicon nitride is deposited at relatively low temperatures, making it suitable for wafers that cannot tolerate high-temperature processing. This thin-film deposition process provides excellent flexibility and allows silicon nitride films to be deposited over thermal oxide, TEOS oxide, metals, and other thin-film materials used in semiconductor manufacturing.
PECVD OxyNitride
PECVD oxynitride combines the properties of silicon dioxide and silicon nitride to provide excellent dielectric performance, refractive index control, and optical characteristics. It is frequently used in optical coatings, passivation layers, silicon photonics, and semiconductor processing applications requiring low thermal budgets.
Low Stress PECVD Nitride
Low stress PECVD nitride provides improved mechanical stability while maintaining the advantages of low-temperature deposition. These films are commonly used in MEMS, sensors, microelectronic devices, wafer-level packaging, and advanced semiconductor fabrication processes that require reduced wafer bow and low residual stress.
PECVD Oxide Films
PECVD oxide films offer greater process flexibility than thermal oxide because they can be deposited at lower temperatures. These films are widely used for insulation layers, passivation coatings, interlayer dielectrics, semiconductor fabrication, integrated circuits, and advanced wafer processing.
PECVD Silicon Carbide Coatings
PECVD silicon carbide coatings provide excellent chemical resistance, hardness, electrical insulation, and environmental durability. Low-temperature deposition allows these films to be integrated with other thin-film structures while minimizing thermal stress and simplifying semiconductor process integration.
Applications for Silicon Nitride Wafers
- MEMS devices and microsensors
- KOH etching hard masks
- Reactive ion etching (RIE)
- Bulk micromachining
- Cantilever beams and membranes
- Passivation layers
- Dielectric isolation layers
- Silicon photonics and nanophotonics
- Optical waveguides
- Photonic integrated circuits
- Microfluidic structures
- Pressure and temperature sensors
- Semiconductor fabrication
- Thin-film deposition
- Wafer-level packaging