Silicon oxide (SiO2) wafers are among the most widely used substrates in semiconductor fabrication, providing high-quality electrical insulation, surface passivation, and dielectric isolation for integrated circuits, MEMS, photonic devices, and advanced microelectronics. Silicon dioxide films may be produced by thermal oxidation, wet and dry oxidation, or CVD deposition, depending on the desired oxide thickness and device requirements. UniversityWafer supplies thermal oxide wafers, oxide-coated silicon wafers, and custom SiO2 coatings for research laboratories, universities, and commercial semiconductor manufacturing.
UniversityWafer supplies thermal oxide silicon wafers, deposited SiO2 films, and multilayer dielectric wafers for semiconductor fabrication, MEMS, MOS devices, wafer bonding, photonics, and university research.
Oxide-coated wafers can be supplied with custom wafer diameter, crystal orientation, resistivity, oxide thickness, film uniformity, polish, and single-side or double-side coatings. Additional films such as silicon nitride, TEOS oxide, and low-stress LPCVD layers may also be available.
A researcher from a small technology company requested a custom multilayer wafer configuration for device fabrication:
Requested quantity: 25 wafers
Reference number: 270575
This type of silicon oxide and silicon nitride stack may be used for MEMS structures, dielectric isolation, optical devices, passivation layers, masking, and multilayer semiconductor fabrication.
Tell us the wafer diameter, substrate type, oxide process, film thickness, coating side, quantity, and any required tolerances. Our team can help determine whether wet or dry thermal oxidation, CVD oxide, TEOS oxide, or a multilayer dielectric stack is best suited for your process.
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Silicon oxide, commonly written as SiO2 and also called silicon dioxide, is a dielectric material composed of silicon and oxygen. In semiconductor processing, it is commonly grown directly on a silicon surface through thermal oxidation or deposited using chemical vapor deposition.
SiO2 provides electrical insulation, surface passivation, chemical stability, and compatibility with lithography, diffusion, etching, and deposition processes. These properties make it important for MOS capacitors, CMOS devices, MEMS, integrated circuits, sensors, photonic structures, and wafer-level research.
Silicon oxide (SiO2) wafers are among the most widely used substrates in semiconductor manufacturing. A thin layer of silicon dioxide grown or deposited on a silicon wafer provides excellent electrical insulation, surface passivation, diffusion masking, and dielectric isolation for integrated circuits, MEMS devices, photonic components, and sensors.
UniversityWafer supplies thermal oxide wafers, oxide-coated silicon substrates, TEOS oxide wafers, LPCVD oxide films, and custom silicon dioxide thicknesses for university research, semiconductor development, and production applications.
Silicon dioxide performs several essential functions throughout the IC fabrication process. Depending on the required device structure, the oxide layer may serve as:
| Process | Advantages | Typical Uses |
|---|---|---|
| Thermal Oxidation | Highest interface quality, dense SiO₂, low defect density | MOS gates, high-performance ICs, MEMS |
| LPCVD / TEOS Oxide | Excellent thickness control and conformal coverage | Interlayer dielectrics, MEMS, multilayer devices |
| PECVD Oxide | Low-temperature deposition | Temperature-sensitive substrates and back-end processing |
Both thermal oxidation processes grow silicon dioxide directly from the silicon substrate, but they are optimized for different applications.
| Method | Characteristics | Applications |
|---|---|---|
| Dry Oxidation | Slower growth, extremely dense oxide, excellent electrical quality | Gate oxides, MOS capacitors, precision dielectric layers |
| Wet Oxidation | Much faster growth, ideal for thicker oxide films | Isolation layers, field oxides, MEMS structures |
| Oxide Thickness | Common Application |
|---|---|
| 10–100 nm | Gate oxide and MOS devices |
| 100–500 nm | Passivation and dielectric isolation |
| 0.5–2 µm | MEMS fabrication and masking layers |
| 2–10 µm | Thick oxide structures and specialty research |
Silicon oxide coated wafers are used throughout semiconductor manufacturing and advanced research including:
Selecting the proper silicon oxide wafer depends on several factors including oxide thickness, deposition method, wafer diameter, crystal orientation, polish, resistivity, and the intended fabrication process. Researchers developing MEMS, photonic devices, CMOS circuits, or power electronics often require different oxide specifications to optimize device performance.
UniversityWafer offers custom oxide thicknesses on silicon wafers, SOI wafers, and specialty semiconductor substrates for research and production quantities.
Thermal oxide is grown directly from the silicon wafer, producing a dense, high-quality silicon dioxide layer. CVD oxide is deposited onto the wafer and is commonly used when thicker films or lower processing temperatures are required.
Yes. Silicon oxide thicknesses can be customized from a few nanometers to several microns depending on the deposition process and research application.
Yes. UniversityWafer supplies wafers with thermal oxide, LPCVD silicon nitride, TEOS oxide, and other dielectric film combinations used in semiconductor fabrication.