I'd like a quote for 10x of wafer #3328 (100mm Prime Undoped high Resistivity Float Zone Si Wafer), with some customization. Firstly, I'd like it thinned to 270um. Secondly, I need it DSP. I'm also curious about your oxide capabilities and the added cost. I will need an oxide hard mask for DRIE, and I am determining if it makes more sense for me to add oxide myself or not. Can you do a 3um thermal oxide? and what is the additional cost. Thank you!
What Float Zone Silicon Wafer Do I Need?
A PhD candidate requested a quote for the following.
Reference #321322 for specs and pricing.
Let us know your research is and we'll quote the FZ Silicon in small and large quantities.
Fill out the form for an immediate quote! Or, Buy Online and Start Researching Today!
Float Zone Silicon Used for THz Applications
Researchers have used our float zone wafer spec below. Please ask for pricing.
Item
GY50d
Description
Silicon wafers, per SEMI, P/P 2"Ø×1,000±25µm, FZ Intrinsic undoped Si [100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, SEMI primary Flat (one):15.88±1.65mm @ 110±1°, Single wafer boxes, MCC Lifetime>1,000µs.
Price: Reference #266760. For GaP wafers click.
Helping Researchers Scope Their FZ Needs
This page specifies the requirements of n-type silicon wafers, having crystal Ori
<100> & <111>, to be used in the manufacture of UV/Photovoltaic and other Silicon Photodetectors.
2 REQUIREMENTS
2.1 2" Wafer Specifications
Ori: <100> Material growth method: Float zone Diameter: 50.8mm ±1mm
Dopant species: N-type/Phosphorous
Primary flat: Per SEMI standard Dislocation Density: 500/cm2 maximum Parallelism (Taper): 5mm maximum
Edges: Wafer edges to be machined to a rounded profile.
For lapped surfaces: Surface to be chemically etched sufficiently to remove damage. For Resistivity, Lifetime, Thickness and Finish requirements, see Table 1.
| Item # | RES (W cm) |
LIFETIME (µ SEC.) | THICK (µm) |
Pol | |||||||||
| 1 | 300 ±10% | 1000 min. | 430 ±25 | Lapped & etched both sides | |||||||||
| 2 | 10±10% | 500 min. | 430 ±25 | Same as dash 1 | |||||||||
| 3 | 300±10% | 1000 min. | 405 ±25 | Lapped & etched one side, polished other side | |||||||||
| 4 | 300±10% | 1000 min. | 250 ±25 | Same as dash 3 | |||||||||
| 5 | 300±10% | 1000 min. | 300 ±10 | Same as dash 3 | |||||||||
| 6 | 300±10% | 1000 min. | 380 ±12 | Same as dash 1 | |||||||||
2.2 4" Wafer Specifications
a) GENERAL
Ori: <100> [for N<100> Type, see Table 2]
<111> [for N<111> Type, see Table 3]
Material growth method: Float Zone Si
Diameter: 100mm ± 1mm
Dopant species: N-type/Phosphorous
Primary flat: 30-35mm @ [110] ± 1
Secondary flat: Per SEMI Standard
Resistivity: Per Table 2 for N <100> / Per Table 3 for N <111>
Radial Resistivity Variation (RRV): <10%
Thickness: Per Table 2 for N <100> / Per Table 3 for N <111>
Lifetime: Per Table 2 for N <100> / Per Table 3 for N <111>
Parallelism (Taper): 10µm maximum
Edges: Wafer edges to be machined to a rounded profile.
Surface Finish: Per Table 2 for N <100> / Per Table 3 for N <111>
For lapped surfaces, the wafer surface should be chemically etched to remove all damage and meet SEMI M1-94 defect specifications.
For polished surfaces, sufficient polishing should remove lapping-induced defects and comply with SEMI M1-94 requirements.
Structural (Crystal Perfection)
- Dislocation Density (EPD): None typical; 2/cm² maximum
- Lineage: None typical
- Slip: None typical
- Swirls: None typical
- Stacking Faults: None typical
- Oxide Precipitates (BMD): None typical
- Point Defects: None typical; 2/cm² maximum
ASTM F154-88 and SEMI standards apply for all structural defect definitions.
Table 2
Resistivity, Lifetime, Thickness and Finish Requirements for N <100> Type
| DASH # | MATERIAL GRADE | RESISTIVITY (W cm) |
LIFETIME (µ sec.) |
THICKNESS (µm) |
FINISH | |||||||||
| 10 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
300 ±15 | Lapped & etched one side, polished other side | |||||||||
| 11 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
400 ±15 | Same as dash 10 | |||||||||
| 12 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
500 ±15 | Same as dash 10 | |||||||||
| 13 | FZ-HPS | 10 ±15% | 500 min. > 1000 typ. |
400 ±15 | Same as dash 10 | |||||||||
| 14 | FZ-HPS | 1 ±15% | 500 min. > 1000 typ. |
400 ±15 | Same as dash 10 | |||||||||
| 15 | FZ-NTD | 1,000 ±10% | 300 min. > 750 typ. |
400 ±15 | Same as dash 10 | |||||||||
| 16 | FZ-NTD | 1,000 ±10% | 300 min. > 750 typ. |
300 ±20 | Same as dash 10 | |||||||||
| 17 | FZ-NTD | 100 ±10% | 150 min. > 300 typ. |
400 ±15 | Same as dash 10 | |||||||||
| 18 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
400 ±15 | Polished both sides | |||||||||
| 19 | FZ-NTD | 500 ±10% | 300 min. > 750 typ. |
400 ±15 | Same as dash 10 | |||||||||
| 20 | FZ-HPS | 5,000 ±30% | > 1,000 | 400 ±15 | Same as dash 10 | |||||||||
| CAGE CODE CODE CAGE 6 9 2 7 6 |
NO. DE DOCUMENT/DOCUMENT NO. 2 5 7 5 5 2 6 REV FEUILLE DE SHEET 6 OF 8 10 |
|||||||||||||
TABLE 3
RESISTIVITY, LIFETIME, THICKNESS AND FINISH REQUIREMENTS [FOR N <111> -TYPE]
| DASH # | MATERIAL GRADE | RESISTIVITY (W cm) |
LIFETIME (µ sec.) |
THICKNESS (µm) |
FINISH | |||||||||||||
| 30 | FZ-HPS | 1,000 ±25% | >1,000 typ. | 300 ±15 | Lapped & etched one side, polished other side |
|||||||||||||
| 31 | FZ-HPS | 3,000 ±30% | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
| 32 | FZ- HPS | 5,000 ±30% | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
| 33 | FZ-HPS | 5,000 ±30% | >1,000 typ. | 250 ±15 | Polished both sides | |||||||||||||
| 34 | FZ-HPS | 7,500 ±30% | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
| 35 | FZ-HPS | 7,500 ±30% | >1,000 typ. | 250 ±15 | Same as dash 30 | |||||||||||||
| 36 | FZ-HPS | >10,000 <20,000 | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
| 37 | FZ-HPS | >10,000 <20,000 | >1,000 typ. | 250 ±15 | Same as dash 30 | |||||||||||||
| 38 | FZ-HPS | >10,000 <20,000 | >1,000 typ. | 200 ±15 | Same as dash 30 | |||||||||||||
| 39 | FZ-HPS | >10,000 | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
| 40 | FZ-HPS | 300 ±10% | 300 min. >600 typ. |
300 ±15 | Same as dash 30 | |||||||||||||
| 41 | FZ-NTD | 1200–1650 | >2000 typ. | 400 ±15 | Same as dash 30 | |||||||||||||
| 42 | FZ-NTD | 1200-1650 | >300 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
| CAGE CODE CODE CAGE 6 9 2 7 6 |
NO. DE DOCUMENT/DOCUMENT NO. 2 5 7 5 5 2 6 REV FEUILLE DE SHEET 7 OF 8 10 |
|||||||||||||||||
Configuration and Quality Assurance Provisions
Identification
- Manufacturer name, logo, trademark, or code.
- Part number and product description.
- Excelitas part number.
- Identification requirements per SEMI M1.12.2-94.
Traceability & Certification
- Ingot, batch, log, and material control references supplied.
- Certificate of Conformance provided with shipment.
- External processing sources identified when applicable.
- Resistivity, lifetime, thickness, diameter, and taper reports supplied.
- Crystallographic perfection reports supplied.
- Applicable SEMI standards followed for testing and qualification.