Float Zone Silicon Wafer Highest Purity

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Float Zone Silicon Used for THz Applications

Researchers have used our float zone wafer spec below. Please ask for pricing.

Item  
GY50d

Description

Silicon wafers, per SEMI, P/P 2"Ø×1,000±25µm, FZ Intrinsic undoped Si [100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, SEMI primary Flat (one):15.88±1.65mm @ 110±1°, Single wafer boxes, MCC Lifetime>1,000µs.

Price: Reference #266760. For GaP wafers click.

Helping Researchers Scope Their FZ Needs

This page specifies the requirements of n-type silicon wafers, having crystal orientation
<100> & <111>, to be used in the manufacture of UV/Photovoltaic and other Silicon Photodetectors.

2 REQUIREMENTS

2.1 2" Wafer Specifications
Orientation: <100> Material growth method: Float zone Diameter: 50.8mm ±1mm
Dopant species: N-type/Phosphorous
Primary flat: Per SEMI standard Dislocation Density: 500/cm2 maximum Parallelism (Taper): 5mm maximum
Edges: Wafer edges to be machined to a rounded profile.
For lapped surfaces: Surface to be chemically etched sufficiently to remove damage. For Resistivity, Lifetime, Thickness and Finish requirements, see Table 1.

Item # RES
(W cm)		 LIFETIME (µ SEC.) THICK
(µm)		 Pol
1 300 ±10% 1000 min. 430 ±25 Lapped & etched both sides
2 10±10% 500 min. 430 ±25 Same as dash 1
3 300±10% 1000 min. 405 ±25 Lapped & etched one side, polished other side
4 300±10% 1000 min. 250 ±25 Same as dash 3
5 300±10% 1000 min. 300 ±10 Same as dash 3
6 300±10% 1000 min. 380 ±12 Same as dash 1

2.2          4" Wafer Specifications

a)   GENERAL
Orientation:                                               <100> [for N<100> Type, see Table 2]
<111> [for N<111> Type, see Table 3]
Material growth method:                          Float zone Si
Diameter:                                                  100mm ± 1mm
Dopant species:                                         N-type/Phosphorous
Primary flat:                                              30-35mm @ [110] ± 1
Secondary flat:                                          Per Semi Standard
Resistivity:                                                Per Table 2 for N <100> Per Table 3 for N <111>
Radial Resistivity Variation (RRV):         < 10%
Thickness:                                                 Per Table 2 for N <100> Per Table 3 for N <111>

Lifetime:                                                   Per Table 2 for N <100> Per Table 3 for N <111>
Parallelism (Taper):                                  10µm maximum
Edges:                                                       Wafer edges to be machined to a rounded profile.
Surface Finish:                                          Per Table 2 for N <100> Per Table 3 for N <111>
For lapped surfaces:       Surface to be chemically etched sufficiently to remove all surface damages.  Final  surface  to  be  free  of  chemical  thinning  stains. SEMI  M1-94  specification  shall  apply  for  surface  defects  and defect limits.
For polished surfaces:    Surface to be polished sufficiently (i.e., 2mil min) to remove all surface damages including lapping induced defects. SEMI M1-94 specification shall apply for surface defects and defect limits.
b)   STRUCTURAL (Crystal Perfection)
Dislocation Density (EPD):          None typical; 2/cm2 maximum (cumulative) Lineage:                                        None typical
Slip:                                              None typical
Swirls:                                           None typical
Stacking Faults:                            None typical Oxide Precipitates (BMD):           None Typical
Point Defects:                               None typical; 2/cm2 maximum (cumulative)
NOTE: "Point Defects" include "Haze", "Pits", "Particulate Contamination", etc.
- For "NOMENCLATURE DEFINITION: ASTM F154-88" standard of “STRUCTURAL
DEFECTS" shall apply.
- For any other non-specified specifications SEMI standards shall apply.

TABLE 2
RESISTIVITY, LIFETIME, THICKNESS AND FINISH REQUIREMENTS [FOR N <100> -TYPE]
DASH # MATERIAL GRADE RESISTIVITY
(W cm)		 LIFETIME
(µ sec.)		 THICKNESS
(µm)		 FINISH
10 FZ-NTD 300 ±10% 300 min.
> 600 typ.		 300 ±15 Lapped & etched one side, polished other side
11 FZ-NTD 300 ±10% 300 min.
> 600 typ.		 400 ±15 Same as dash 10
12 FZ-NTD 300 ±10% 300 min.
> 600 typ.		 500 ±15 Same as dash 10
13 FZ-HPS 10 ±15% 500 min.
> 1000 typ.		 400 ±15 Same as dash 10
14 FZ-HPS 1 ±15% 500 min.
> 1000 typ.		 400 ±15 Same as dash 10
15 FZ-NTD 1,000 ±10% 300 min.
> 750 typ.		 400 ±15 Same as dash 10
16 FZ-NTD 1,000 ±10% 300 min.
> 750 typ.		 300 ±20 Same as dash 10
17 FZ-NTD 100 ±10% 150 min.
> 300 typ.		 400 ±15 Same as dash 10
18 FZ-NTD 300 ±10% 300 min.
> 600 typ.		 400 ±15 Polished both sides
19 FZ-NTD 500 ±10% 300 min.
> 750 typ.		 400 ±15 Same as dash 10
20 FZ-HPS 5,000 ±30% > 1,000 400 ±15 Same as dash 10
  CAGE CODE CODE CAGE
6 9 2 7 6		 NO. DE DOCUMENT/DOCUMENT NO.
2  5  7  5  5  2  6        REV
FEUILLE                            DE
SHEET                6       OF                     8                  10

TABLE 3
RESISTIVITY, LIFETIME, THICKNESS AND FINISH REQUIREMENTS [FOR N <111> -TYPE]

DASH # MATERIAL GRADE RESISTIVITY
(W cm)		 LIFETIME
(µ sec.)		 THICKNESS
(µm)		 FINISH
30 FZ-HPS 1,000 ±25% >1,000 typ. 300 ±15 Lapped & etched one
side, polished other side
31 FZ-HPS 3,000 ±30% >1,000 typ. 300 ±15 Same as dash 30
32 FZ- HPS 5,000 ±30% >1,000 typ. 300 ±15 Same as dash 30
33 FZ-HPS 5,000 ±30% >1,000 typ. 250 ±15 Polished both sides
34 FZ-HPS 7,500 ±30% >1,000 typ. 300 ±15 Same as dash 30
35 FZ-HPS 7,500 ±30% >1,000 typ. 250 ±15 Same as dash 30
36 FZ-HPS >10,000 <20,000 >1,000 typ. 300 ±15 Same as dash 30
37 FZ-HPS >10,000 <20,000 >1,000 typ. 250 ±15 Same as dash 30
38 FZ-HPS >10,000 <20,000 >1,000 typ. 200 ±15 Same as dash 30
39 FZ-HPS >10,000 >1,000 typ. 300 ±15 Same as dash 30
40 FZ-HPS 300 ±10% 300 min.
>600 typ.		 300 ±15 Same as dash 30
41 FZ-NTD 1200–1650 >2000 typ. 400 ±15 Same as dash 30
42 FZ-NTD 1200-1650 >300 typ. 300 ±15 Same as dash 30
  CAGE CODE CODE CAGE
6 9 2 7 6		 NO. DE DOCUMENT/DOCUMENT NO.
2  5  7  5  5  2  6        REV
FEUILLE                            DE
SHEET                7       OF                     8                  10
3             CONFIGURATION AND QUALITY ASSURANCE PROVISIONS
3.1          Identification
The packaging shall be marked, as a minimum, with the following:
a)   Manufacturer's name, trade mark, logo or code.
b)   Manufacturer's part/or MIL specification number, description and product trade name.
c)   Excelitas part number, (consisting of the seven figure drawing number).
d)   Any other identification requirement shall meet M1.12.2-94 SEMI specification.
3.2          Traceability/Certification
a)   Ingot, batch, log and material control references shall be supplied with the material.
b)   A Certificate  of  Conformance,  signed  by a  cognizant  and  responsible  company official (e.g.  Head  of  Quality  Control)  shall  be  supplied  with  the  material  shipped  verifying conformance to this specification and all other specifications invoked. Reference shall be given  to  the  manufacturer's  Ingot,  batch  or  lot  numbers  and  date  codes  of  the  subject material.
c)   For any process, material preparation, or testing that is not performed by the Vendor, the Vendor  must  identify  (in  the  CFC)  the  external  parties  involved  and  the  process  steps handled by these parties. The Vendor must also disclose the date these process steps were performed and the full address and contact name of the external parties involved.
d)   Written approval must be obtained  by Excelitas  for any services provided by non  ISO- 9001  qualified  facilities.  For  any subcontract  parties  that  are  not  ISO  9001/2  qualified, Excelitas also reserves the right to perform an inspection audit of their facilities in order to approve/qualify the services provided.
e)   Resistivity,  lifetime,  thickness,  diameter and  taper  shall  be  measured  on  a  sample  basis and  a  test  report  supplied.  Wafers  used  for  these  tests  shall  be  packaged  as  per  4.0  c). Resistivity and lifetime of Ingot must also be measured along Ingot's length from which material lot/batch is shipped to Excelitas and plotted graph results supplied.
f)   A  "Crystallographic  Perfection"  test  report  for  Ingot  from  which  material  lot/batch  is shipped to Excelitas must be supplied with batch shipped to Excelitas. This report must be signed   by   a   cognizant   and   responsible   company   official.   The   "Crystallographic Perfection" test methods shall be in accordance with M1.9.13-94 SEMI specification.
g)   For any of  applicable tests specified in 3.2 e) or  3.2 f) which can not be performed by Vendor  (i.e.  F416  "Oxidation  Induced  Defects")  M1.11.2-94  SEMI  specification  shall apply.