Researcher Request:
Could you please provide pricing for 30mm <100> heavily doped silicon wafers (P/B acceptable) with 2850 Angstrom dry thermal oxide? Also, what is the minimum order quantity?
Researchers Using Heavily Doped Silicon Wafers
Heavily doped silicon wafers are widely used in semiconductor research, MEMS fabrication, RF electronics, power devices, sensors, and advanced materials studies. Their low resistivity and high carrier concentration make them ideal for applications requiring excellent electrical conductivity, oxide growth, and reliable device performance.
A PhD researcher recently requested the following heavily doped silicon wafer specification for device fabrication and testing:
Reference #211189 for specifications, pricing, and availability.
Available Heavily Doped Silicon Wafer Options
UniversityWafer, Inc. supplies heavily doped silicon wafers in multiple diameters, resistivity ranges, orientations, and oxide thicknesses for research and production applications.
- 50.8mm P-Type (100) | 0.001-0.005 ohm-cm | SSP | 280µm | Prime Grade
- 76.2mm P-Type (100) | 0.001-0.005 ohm-cm | SSP | 380µm | Prime Grade
- 100mm N-Type Arsenic (100) | 0.001-0.005 ohm-cm | SSP | 500µm | Prime Grade
- 150mm P-Type (100) | 0.001-0.005 ohm-cm | SSP | 675µm | Prime Grade
- 200mm and 300mm heavily doped silicon wafers available upon request
Custom Doping and Oxide Options
Researchers frequently request custom wafer specifications including:
- Boron-doped (P-Type) silicon wafers
- Phosphorus-doped silicon wafers
- Arsenic-doped (N-Type) silicon wafers
- Antimony-doped silicon wafers
- Dry thermal oxide coatings
- Wet thermal oxide coatings
- Double-side polished (DSP) wafers
- Prime-grade and test-grade substrates
We can also provide wafers with custom oxide thicknesses, resistivity ranges, crystal orientations, and diameters for semiconductor process development, MOS structures, MEMS devices, RF circuits, and power electronics research.
Get Your Heavily Doped Silicon Wafer Quote FAST! Or, Buy Online and Start Researching Today!
What Are Heavily Doped Silicon Wafers Used For?
Heavily doped silicon wafers are low-resistivity silicon substrates used when high electrical conductivity, controlled doping, and reliable device performance are required. These wafers are commonly used in semiconductor device manufacturing, MEMS fabrication, RF devices, solar cells, power electronics, sensors, and advanced research applications.
By adding dopants such as boron, phosphorus, arsenic, or antimony, silicon wafers can be made either P-type or N-type. The dopant concentration controls the wafer’s resistivity, carrier concentration, and electrical behavior.
Common Applications for Heavily Doped Silicon
- Semiconductor fabrication: Used as conductive substrates for device processing, thin-film deposition, oxide growth, and electrical testing.
- MEMS devices: Used for sensors, actuators, microfluidics, and microelectromechanical structures.
- Solar cells: Used to form p-n junctions and support photovoltaic device research.
- RF and analog devices: Used in applications where substrate conductivity, grounding, or electrical isolation must be carefully controlled.
- Power devices: Used in diodes, rectifiers, thyristors, IGBTs, and other high-current semiconductor devices.
- Oxide-coated wafers: Heavily doped silicon with thermal oxide is used for gate dielectric studies, MOS structures, sensors, and device prototyping.
Buy Heavily Doped Silicon Wafers Online
UniversityWafer, Inc. supplies low-resistivity silicon wafers in multiple diameters, orientations, dopants, thicknesses, and polish options. Common stock includes P-type boron-doped and N-type arsenic-doped wafers with resistivity ranges such as 0.01-0.02 ohm-cm and 0.001-0.005 ohm-cm.
What Is Degenerately Doped Silicon?
Degenerately doped silicon is silicon that has been doped so heavily that it begins to behave more like a metal than a conventional semiconductor. This occurs when the carrier concentration becomes high enough to create very low resistivity and strong electrical conductivity.
UniversityWafer, Inc. generally considers silicon with resistivity below 0.020 ohm-cm to be degenerately doped. Degenerate silicon is useful when a project requires high carrier density, low contact resistance, and conductive silicon behavior.
Typical Degenerately Doped Silicon Guideline:
P-type silicon may be considered degenerately doped when resistivity is below approximately 0.040 ohm-cm. N-type silicon may be considered degenerately doped when resistivity is below approximately 0.020 ohm-cm. UniversityWafer, Inc. typically classifies degenerately doped silicon as material with resistivity below 0.020 ohm-cm.
Reference #224057 for more information.
Why Researchers Use Degenerately Doped Silicon
- High electrical conductivity
- Low contact resistance
- High carrier concentration
- Improved current spreading
- Useful behavior for MOS, MEMS, RF, and power device research
- Compatibility with thermal oxide and thin-film deposition
P-Type and N-Type Heavily Doped Silicon
Heavily doped silicon wafers are available in both P-type and N-type materials. P-type silicon is commonly doped with boron, while N-type silicon may be doped with phosphorus, arsenic, or antimony. The correct dopant depends on the electrical requirements of the device or experiment.
Researchers often specify wafer diameter, orientation, resistivity, dopant, thickness, polish, and oxide thickness when requesting heavily doped silicon wafers.
Typical Heavily Doped Silicon Wafer Specifications
- Diameters: 25.4mm, 50.8mm, 76.2mm, 100mm, 150mm, 200mm, and 300mm
- Orientations: <100>, <111>, and custom orientations
- Types: P/B, N/P, N/As, and N/Sb
- Resistivity: low-resistivity and ultra-low-resistivity ranges available
- Polish: SSP, DSP, prime grade, test grade, and custom polish
- Films: thermal oxide, dry oxide, wet oxide, nitride, and custom thin films
Need low-resistivity silicon wafers? Send your required diameter, dopant, orientation, resistivity, thickness, polish, oxide thickness, and quantity for a fast quote.