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UniversityWafer supplies R-plane sapphire wafers and epi-ready Al₂O₃ substrates for semiconductor research, Silicon-on-Sapphire fabrication, GaN growth, optical windows, RF devices, and thin-film deposition. We offer standard and custom sapphire wafer specifications for universities, laboratories, and production facilities.
R-plane sapphire is commonly used for Silicon-on-Sapphire (SOS) applications because of its excellent electrical insulation, high-temperature stability, mechanical hardness, and optical transparency. These properties make R-plane sapphire useful for integrated circuits, radiation-resistant electronics, MEMS devices, photonics, and photovoltaic research.
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R-Plane Sapphire for Semiconductor Applications
R-plane sapphire substrates are used in advanced semiconductor manufacturing because they provide a stable, insulating, and chemically resistant platform for epitaxial films. Researchers use R-plane Al₂O₃ wafers for heteroepitaxial silicon growth, compound semiconductor deposition, and device structures that require strong thermal and electrical performance.
These sapphire wafers are also used in GaN-on-Sapphire research, RF amplifier development, optical sensor fabrication, laser systems, and high-frequency electronic devices. Their crystal orientation can influence film quality, stress, and device performance during MOCVD, MBE, PLD, and other thin-film deposition processes.
R-plane sapphire can be compared with C-plane sapphire and A-plane sapphire depending on the desired epitaxial relationship, surface orientation, and application. Selecting the correct sapphire plane is important for semiconductor device fabrication, optical performance, and research repeatability.
Niobium Deposition on R-Plane Sapphire
Researchers have used R-plane sapphire wafers as substrates for depositing niobium (Nb) metal films. Sapphire’s smooth surface, thermal stability, and insulating properties make it useful for superconducting films, thin-film metals, sensors, and advanced materials research.
Example R-plane sapphire specifications requested:
Sapphire 10x10mm R-plane +/-0.3, 430~500 +/-25 µm, SSP
Sapphire 2 inch R-plane +/-0.3, 430 +/-25 µm, SSP
Reference #264147 for pricing.
Advantages of R-Plane Sapphire Wafers
R-Plane Sapphire (Al₂O₃) wafers are widely used as advanced substrates for semiconductor manufacturing, optical devices, RF electronics, MEMS fabrication, and heteroepitaxial growth. Their unique crystal orientation provides excellent thermal stability, electrical insulation, chemical resistance, and optical transparency, making them ideal for demanding research and production environments.
Researchers frequently select R-plane sapphire substrates for the growth of silicon, gallium nitride (GaN), indium nitride (InN), zinc telluride (ZnTe), and other compound semiconductor materials. The crystal structure promotes high-quality epitaxial growth and supports advanced microelectronic and photonic device fabrication.
Compared to many conventional substrate materials, R-plane sapphire offers superior hardness, excellent thermal conductivity, low dielectric loss, and exceptional surface quality. These characteristics make it valuable for RF amplifiers, microwave electronics, optical sensors, laser systems, LED manufacturing, and Silicon-on-Sapphire (SOS) technologies.
UniversityWafer stocks prime-grade and epi-ready R-plane sapphire wafers in multiple diameters, thicknesses, and surface finishes including SSP and DSP options. Custom specifications are also available for research, prototyping, and production applications.
R-Plane Sapphire Wafer Inventory
Our inventory includes prime-grade and epi-ready sapphire substrates suitable for MOCVD, MBE, PLD, thin-film deposition, semiconductor manufacturing, RF device fabrication, photonics, and optical research.
| R-Plane Sapphire Substrate Inventory List | |||||||
| Item No. | Size | Orientation | Thickness (µm) | Surface | Quantity | Remarks / Status | Wafer Grade |
|---|---|---|---|---|---|---|---|
| 1 | 10x10mm | R-plane +/-0.3 | 430~500 +/-25 | SSP | 175 | - | Prime, Epi-ready |
| 2 | 10x10mm | R-plane +/-0.3 | 430~500 +/-25 | DSP | 86 | - | Prime, Epi-ready |
| 3 | 2" | R-plane +/-0.3 | 330 +/-25 | SSP | 45 | - | Prime, Epi-ready |
| 4 | 2" | R-plane +/-0.3 | 430 +/-25 | SSP | 195 | - | Prime, Epi-ready |
| 5 | 2" | R-plane +/-0.3 | 430 +/-25 | DSP | 143 | - | Prime, Epi-ready |
| 6 | 3" | R-plane +/-0.5 | 350 +/-20 | SSP | 10 | - | Prime, Epi-ready |
| 7 | 3" | R-plane +/-0.5 | 500 +/-10 | SSP | 45 | - | Prime, Epi-ready |
| 8 | 3" | R-plane +/-0.5 | 500 +/-10 | DSP | 15 | - | Prime, Epi-ready |
| 9 | 4" | R-plane +/-0.5 | 475 +/-25 | SSP | 7 | Double Flat Cut, SEMI STD | Prime, Epi-ready |
| 10 | 4" | R-plane +/-0.5 | 475 +/-25 | SSP | 24 | HEM Method | Prime, Epi-ready |
| 11 | 4" | R-plane +/-0.5 | 475 +/-25 | SSP | 379 | - | Prime, Epi-ready |
| 12 | 4" | R-plane +/-0.5 | 475 +/-25 | DSP | 383 | - | Prime, Epi-ready |
| 13 | 4" | R-plane +/-0.5 | 500 +/-25 | DSP | 97 | - | Prime, Epi-ready |
| 14 | 4" | R-plane +/-0.5 | 900 +/-25 | SSP | 117 | L/L, Un-polished | - |
| 15 | 6" | R-plane +/-0.5 | 600 +/-25 | SSP | 237 | - | Prime, Epi-ready |
| 16 | 6" | R-plane +/-0.5 | 600 +/-25 | DSP | 103 | L/L, Un-polished | - |
| 17 | 8" | R-plane +/-1.0 | 725 +/-25 | SSP | 78 | L/L, Un-polished | - |
| 18 | 8" | R-plane +/-1.0 | 725 +/-25 | DSP | 46 | L/L, Un-polished | - |
Additional Specifications Available:
1. Custom dimensions, thicknesses, and orientations are available upon request.
2. Prime-grade and epi-ready wafers are typically available for rapid shipment.
3. Standard substrates conform to SEMI industry specifications.
R-Plane Sapphire for Epitaxy, LEDs, and Semiconductor Manufacturing
R-plane sapphire substrates are extensively used in heteroepitaxial growth processes involving GaN, InN, ZnTe, silicon, and other III-V semiconductor materials. Their crystallographic orientation influences film stress, defect density, optical performance, and overall device reliability.
Researchers use R-plane sapphire with advanced deposition technologies such as Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Pulsed Laser Deposition (PLD), and Atomic Layer Deposition (ALD). These processes enable fabrication of high-performance LEDs, photonic devices, optical coatings, semiconductor sensors, and RF electronics.
The excellent thermal stability and electrical insulation properties of sapphire make it an attractive substrate for microwave devices, RF amplifiers, MEMS sensors, surface acoustic wave (SAW) devices, and advanced integrated circuits. Sapphire also offers exceptional resistance to harsh semiconductor processing environments.
R-plane sapphire is frequently selected for GaN-on-Sapphire structures, Silicon-on-Sapphire technologies, optical windows, infrared imaging systems, laser applications, and advanced photonics research. Its high transparency and mechanical durability support both electronic and optical device development.
Additional applications include MEMS fabrication, microelectronics, quantum technologies, power electronics, telecommunications, and next-generation sensor platforms. As semiconductor technologies continue to evolve, R-plane sapphire remains one of the most versatile substrate materials available for research and manufacturing.