Vertical Gallium Nitride for Research & Production 

Vertical gallium nitride (Vertical GaN) is an emerging wide-bandgap semiconductor technology that enables higher voltage operation, lower conduction losses, and faster switching than conventional lateral GaN devices. Built on low-defect bulk GaN substrates, vertical GaN is being developed for electric vehicle power electronics, renewable energy systems, industrial motor drives, data centers, and next-generation high-efficiency power conversion applications.

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Request Vertical GaN Wafers

UniversityWafer supplies vertical gallium nitride wafers and custom GaN epitaxial structures for high-voltage power device research. Vertical GaN is used in next-generation power devices, vertical MOSFETs, Schottky diodes, and wide-bandgap semiconductor applications.

We can help source bulk GaN substrates, n-type drift layers, vertical MOSFET epitaxy, diode structures, and SBD structures for research and limited production.

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Vertical GaN Wafer Options

  • Bulk GaN substrates
  • n-type GaN drift layers
  • Vertical MOSFET epitaxial structures
  • Schottky diode and SBD stacks
  • Research-grade and production-grade material

Vertical GaN FAQs

What makes Vertical GaN different?

Vertical GaN conducts current through the GaN wafer thickness, enabling higher voltage and lower resistance than many lateral GaN designs.

What substrates does Vertical GaN require?

Vertical GaN devices typically require low-defect bulk GaN substrates and carefully controlled epitaxial drift layers.

What applications use Vertical GaN?

Vertical GaN is used for EV power electronics, solar inverters, data centers, industrial drives, grid infrastructure, and high-voltage power conversion.

What Is Vertical Gallium Nitride?

Vertical Gallium Nitride (Vertical GaN) is an advanced wide-bandgap semiconductor technology designed for next-generation high-power electronic devices. Unlike conventional lateral GaN devices, where current flows across the wafer surface, vertical GaN devices conduct current through the thickness of the wafer. This architecture enables higher voltage capability, greater current density, and improved thermal performance.

Vertical GaN is being developed for electric vehicles, renewable energy systems, industrial automation, data centers, and smart grid infrastructure because it combines the excellent electrical properties of GaN with a device structure optimized for high-voltage operation.

Vertical GaN device structure showing drift layer and vertical current flow

How Vertical GaN Works

A vertical GaN device conducts electrons through a thick n-type drift layer grown on a low-defect bulk GaN substrate. Since current flows vertically rather than laterally, the active device area can support much higher blocking voltages while maintaining low on-resistance. This makes Vertical GaN particularly attractive for applications requiring both high efficiency and compact device size.

Comparison of lateral and vertical GaN devices

Advantages of Vertical GaN

  • Higher blocking voltage than conventional lateral GaN devices.
  • Lower specific on-resistance (RDS(on)) for improved efficiency.
  • Excellent thermal performance for demanding power applications.
  • High switching frequency to reduce passive component size.
  • Improved scalability for high-current power electronics.
  • Suitable for 1.2 kV to 10 kV-class power devices.

Available Vertical GaN Materials

UniversityWafer supplies materials for vertical power device development, including research-grade and production-grade bulk GaN substrates, custom epitaxial structures, drift layers, and device-ready wafers for advanced semiconductor research.

Specification Typical Offering
Wafer Diameter 2", 4", and 6" Bulk GaN
Substrate Type Low-defect Bulk GaN
Drift Layer Custom n-type epitaxy
Device Structures Vertical MOSFETs, Schottky Diodes, SBDs
Voltage Class 1.2–10 kV
Surface Finish Double-side polished and epi-ready options

Applications of Vertical Gallium Nitride in electric vehicles, renewable energy, and industrial power electronics

Applications of Vertical GaN

Vertical GaN technology is expected to transform high-power electronics by delivering higher efficiency, faster switching, and lower system losses. Common research and commercial applications include:

  • Electric vehicle traction inverters
  • Solar power inverters
  • Grid-scale power conversion
  • Industrial motor drives
  • High-efficiency data center power supplies
  • Renewable energy storage systems
  • Advanced aerospace and defense electronics

Why Choose UniversityWafer?

  • Research-grade and production-quality bulk GaN wafers
  • Custom vertical MOSFET and Schottky diode epitaxial structures
  • Low-defect GaN substrates optimized for high-voltage devices
  • Fast quotations for universities, national laboratories, and commercial R&D
  • Worldwide shipping and technical support

Related Vertical GaN Resources