Silicon etching is a critical process used in semiconductor manufacturing, MEMS fabrication, microfluidic device development, wafer bonding, photonics, and sensor production. UniversityWafer supplies silicon wafers for etching applications, including (100) silicon wafers, double-side polished substrates, and custom thickness wafers for anisotropic etching, isotropic etching, DRIE processing, and anodic bonding applications.
UniversityWafer supplies etched silicon wafers for semiconductor fabrication, MEMS devices, microfluidic systems, anodic bonding, heat pipes, sensors, and advanced research applications. We offer <100> and <111> silicon wafers, double-side polished (DSP) substrates, custom wafer thicknesses, and wafer thinning services to support a wide range of microfabrication projects.
A university researcher recently requested silicon wafers for the fabrication of micro-planar heat pipes using silicon etching and anodic bonding techniques.
Research Request:
Double-side polished <100> silicon wafers with thicknesses between 1 mm and 2 mm for etching and anodic bonding to Borofloat® glass. Wafer diameters from 2 inch to 4 inch were acceptable, with quantities ranging from 1 to 5 wafers for prototype development and testing.
Reference #325439 for specifications and pricing.
In addition to standard silicon substrates, we offer custom wafer thinning, backside etching, DSP silicon wafers, and compatible Borofloat® glass substrates for anodic bonding and microfluidic device fabrication.
Request a Fast Quote for Etched Silicon Wafers or Buy Silicon Wafers Online and start your research today.
A silicon etchant is a chemical solution used to selectively remove silicon or silicon-based materials during wafer processing. Etching is an essential step in semiconductor manufacturing, MEMS fabrication, microfluidics, sensor production, and integrated circuit development.
Some of the most widely used silicon etchants include:
Silicon etching technologies are used to manufacture a wide variety of semiconductor and microfabricated devices, including:
The choice of etchant, wafer orientation, and polishing specifications depends on the desired structure, etch profile, and final device performance.
Silicon etching is a semiconductor fabrication process used to selectively remove material from a silicon wafer to create trenches, cavities, channels, membranes, and other microstructures. Etched silicon structures are commonly found in MEMS devices, microfluidic chips, sensors, photonics, power electronics, and advanced integrated circuits.
The choice of etching method depends on the desired geometry, etch depth, surface finish, and crystal orientation. The two primary categories are anisotropic silicon etching and isotropic silicon etching.
Anisotropic etching removes silicon at different rates depending on the crystal orientation of the wafer. This allows engineers to create highly controlled structures with predictable sidewall angles and precise dimensions.
Common anisotropic etchants include potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). These chemicals preferentially etch specific crystallographic planes, making them ideal for MEMS fabrication, pressure sensors, accelerometers, microfluidic devices, and silicon micromachining applications.
Silicon orientation plays a critical role in anisotropic etching. For example, <100> silicon wafers and <111> silicon wafers produce different etch profiles because each crystal plane exhibits a different etch rate. This property allows manufacturers to create V-grooves, cavities, diaphragms, and other precision structures used in semiconductor devices.
Advantages of anisotropic silicon etching include:
Isotropic silicon etching removes material uniformly in all directions. Unlike anisotropic etching, the etch rate is independent of crystal orientation, resulting in rounded profiles and undercutting beneath the masking layer.
This process is frequently used when smooth cavities, rounded structures, or uniform material removal are required. Isotropic etching can be performed using wet chemical processes or plasma-based dry etching technologies.
Applications include:
Wet etching is one of the most widely used silicon processing techniques. During the process, wafers are immersed in a liquid chemical solution that selectively removes exposed silicon. Common wet etchants include KOH, TMAH, hydrofluoric acid (HF), and buffered oxide etch (BOE).
Wet etching offers low processing costs, excellent selectivity, and the ability to process multiple wafers simultaneously. It is commonly used in MEMS manufacturing, wafer cleaning, microfabrication, and substrate preparation.
Dry etching uses plasma and reactive gases to remove silicon material with exceptional precision. One of the most advanced methods is Deep Reactive Ion Etching (DRIE), often referred to as the Bosch process.
DRIE alternates between etching and sidewall passivation steps, allowing engineers to create extremely deep trenches with high aspect ratios and nearly vertical sidewalls. These structures are essential for advanced MEMS sensors, microelectromechanical systems, photonics devices, and semiconductor packaging technologies.
Benefits of DRIE include:
Etched silicon wafers are used throughout the semiconductor industry and research community. Common applications include:
Whether using anisotropic wet etching, isotropic etching, or advanced DRIE processing, silicon etching remains one of the most important manufacturing techniques for creating high-performance semiconductor and microfabricated devices.