Epitaxial Silicon Wafer

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Epitaxy is the depositing of a crystalline layer over a crystalline-based semiconductor substrate or surface (such as a Silicon Wafer). Epitaxial or epi-ready devices are comprised of thin nanolayers of semiconductor crystals. The tools used deposit the layer uniformly to form an epi-wafer. By combining different semiconductor materials and dopants in an epi wafer helps determine the performance capabilities of photonics and radio-frequency (RF) semiconductor components.

 

 

 

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Epitxial Silicon Wafers

6" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
G541 150 6"Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+

4" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Source Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
D274 6 4"Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 - 440 ITME n/n+
E4_151 8 4"Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5
22±1.5
p- Si:B
p- Si:B
3.6±10%
300±50
ITME aro 3wks P/P/P+
E4_134 7 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1
6.85±0.75
p- Si:B
p- Si:B
4.5±10%
0.75±0.15
ITME aro 3wks P/P/P+
E4_104 6 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% ITME aro 2 wks p/p+
E4_22 3 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% ITME aro 2 wks P/P+
E4_106 4 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% ITME aro 2 wks P/P+
E4_105 7 4"Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% ITME aro 2 wks P/P+
E4_26 10 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 ±10% ITME aro 2 wks P/P+
E4_107 8 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 200±10% ITME aro 2 wks P/P+
E4_108 9 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 80±10% ITME aro 2 wks P/P+
E4_42 4 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 32 p- Si:B 600 ±10% ITME aro 2 wks P/P+
E4_109 8 4"Øx440μm p- Si:B[111] 0.01-0.02 P/E 32.5 p- Si:B 100±10% ITME aro 2 wks P/P+
E4_21 5 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 40 p- Si:B 550 ±10% ITME aro 2 wks P/P+
E4_133 3 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 14
10
n- Si:P
p- Si:B
2.5±0.3
15
ITME aro 3wks N/P/P+
E4_135 2 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 14
10
n- Si:P
p- Si:B
2.5±10%
9±10%
ITME aro 3wks n/p/p+
E4_113 8 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20
10
p- Si:B
n- Si:P
10±1.5
5.5±0.7
ITME aro 3wks P/N/N+
E4_127 5 4"Øx381μm n- Si:As[111] 0.0010-0.0035 P/E 33
10
p- Si:B
n- Si:P
12±10%
4±10%
ITME aro 3wks P/N/N+
E4_147 9 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 33±5
9
p- Si:B
n- Si:P
12±2
4
ITME aro 3wks P/N/N+
E4_128 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37
16.5
p- Si:B
n- Si:P
35±10%
12.5±10%
ITME aro 3wks P/N/N+
E4_124 7 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45
7±1
p- Si:B
n- Si:P
13±10%
12±10%
ITME aro 3wks P/N/N+
E4_144 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45
7
p- Si:B
n- Si:P
14.5±10%
12±10%
ITME aro 3wks P/N/N+
E4_132 8 4"Øx525μm n- Si:As[111] 0.002-0.005 P/E 88
88
p- Si:B
n- Si:P
80.5±10%
27±10%
ITME aro 3wks P/N/N+
E4_145 7 4"Øx380μm n- Si:As[111] 0.002-0.005 P/E 105
26
p- Si:B
n- Si:P
0.0035±10%
5±10%
ITME aro 3wks P/N/N+
E4_122 5 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15
6.8±0.8
n- Si:P
n- Si:P
3.8±0.5
0.55±0.15
ITME aro 3wks N/N/N+
E4_84 9 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% ITME aro 2 wks N/N+
E4_143 8 4"Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3
54.5±3.6
n- Si:P
n- Si:P
25±5
4.4
ITME aro 3wks N/N/N+
E4_68 9 4"Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% ITME aro 2 wks N/N+
E4_90 8 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% ITME aro 2 wks N/N+
E4_10 25 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 90±10% ITME aro 2 wks N/N+
E4_89 9 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.07 ±10% ITME aro 2 wks N/N+
E4_91 9 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.13 ±10% ITME aro 2 wks N/N+
E4_92 11 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.15 ±10% ITME aro 2 wks N/N+
E4_93 7 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.19 ±10% ITME aro 2 wks N/N+
E4_30 7 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 65 ±10% ITME aro 2 wks N/N+
E4_116 5 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20
10
n- Si:P
n- Si:P
7±10%
2±0.4
ITME aro 3wks N/N/N+
E4_69 8 4"Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% ITME aro 2 wks N/N+
E4_117 11 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5
28.5
n- Si:P
n- Si:P
12±10%
2±10%
ITME aro 3wks N/N/N+
E4_129 9 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26
11
n- Si:P
n- Si:P
18±10%
2±10%
ITME aro 3wks N/N/N+
E4_54 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% ITME aro 2 wks N/N+
E4_52 15 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 ITME aro 2 wks N/N+
E4_53 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% ITME aro 2 wks N/N+
E4_125 14 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28
8 - 12
n- Si:P
n- Si:P
11±10%
1 - 3
ITME aro 3wks N/N/N+
E4_120 19 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28
9 - 11
n- Si:P
n- Si:P
8 - 11
1 - 3
ITME aro 3wks N/N/N+
E4_111 20 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30
15
5
n- Si:P
n- Si:P
n- Si:P
11±10%
4±10%
1.5±10%
ITME aro 3wks N/N/N/N+
E4_123 10 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 39.5
12
n- Si:P
n- Si:P
29±10%
4±10%
ITME aro 3wks N/N/N+
E4_81 20 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >300 ±10% ITME aro 2 wks N/N+
E4_77 18 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >200 ITME aro 2 wks N/N+
E4_17 2 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% ITME aro 2 wks N/N+
E4_79 8 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 ITME aro 2 wks N/N+
E4_16 1 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% ITME aro 2 wks N/N+
E4_115 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50
15
n- Si:P
n- Si:P
36±4
5.4±0.7
ITME aro 3wks N/N/N+
E4_24 10 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% ITME aro 2 wks N/N+
E4_59 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% ITME aro 2 wks N/N+
E4_5 15 4"Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% ITME aro 2 wks N/N+
E4_94 5 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% ITME aro 2 wks N/N+
E4_112 4 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80
10
n- Si:P
n- Si:P
60±10%
2±1
ITME aro 3wks N/N/N+
E4_146 7 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80
10
n- Si:P
n- Si:P
70±10%
2±1
ITME aro 3wks N/N/N+
E4_137 8 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5
15
p- Si:B
n- Si:P
15±10%
6±0.9
ITME aro 3wks P/N/N+
E4_136 7 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38
18
p- Si:B
n- Si:P
55±10%
10±10%
ITME aro 3wks P/N/N+
E4_9 4 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 14 n- Si:P 4.25 ±10% ITME aro 2 wks N/N+
E4_55 4 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 15 n- Si:P 90 ±10% ITME aro 2 wks N/N+
E4_27 10 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 18 n- Si:P 0.25 ±10% ITME aro 2 wks N/N+
E4_56 6 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% ITME aro 2 wks N/N+
E4_57 8 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% ITME aro 2 wks N/N+
E4_58 3 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 101 ±10% ITME aro 2 wks N/N+
E4_98 5 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% ITME aro 2 wks N/N+
E4_97 9 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% ITME aro 2 wks N/N+
E4_100 15 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% ITME aro 2 wks N/N+
E4_2 16 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% ITME aro 2 wks N/N+
E4_14 2 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% ITME aro 2 wks N/N+
E4_66 5 4"Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% ITME aro 2 wks N/N+
E4_95 10 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% ITME aro 2 wks N/N+
E4_138 4 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58
15
5
n- Si:P
n- Si:P
n- Si:P
60±10%
8±10%
3±10%
ITME aro 3wks N/N/N/N+
E4_148 9 4"Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60
20
n- Si:P
n- Si:P
40.5±4.5
10±2
ITME aro 3wks N/N/N+
E4_60 9 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 60 ±10% ITME aro 2 wks N/N+
E4_12 10 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% ITME aro 2 wks N/N+
E4_19 6 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 70 n- Si:P 60 ±10% ITME aro 2 wks N/N+
E4_61 9 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 75 n- Si:P 125 ±10% ITME aro 2 wks N/N+
E4_44 6 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 100 n- Si:P 420±10% ITME aro 2 wks N/N+

3" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Source Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
K827 4 3"Øx508μm p- Si:B[111] 0.008-0.020 P/E 12.5
140±10
p- Si:B
n- Si:P
2.35
33.60
ITME p+
8611 50 3"Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 - 0.33 ITME n/n+
F667 120 3"Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 - 1.4 Motrla n/n+, Sealed in cassettes of 24 wafers
E3_32 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% ITME aro 2 wks N/N+
E3_40 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% ITME aro 2 wks N/N+
E3_2 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% ITME aro 2 wks N/N+
E3_54 8 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% ITME aro 2 wks N/N+
E3_55 12 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% ITME aro 2 wks N/N+
E3_24 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% ITME aro 2 wks N/N+
E3_38 15 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% ITME aro 2 wks N/N+
E3_62 14 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% ITME aro 2 wks N/N+
E3_30 15 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% ITME aro 2 wks N/N+
E3_48 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% ITME aro 2 wks N/N+
E3_22 12 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% ITME aro 2 wks N/N+
E3_42 4 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 0.05±10% ITME aro 2 wks N/N+
E3_3 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4.8±10% ITME aro 2 wks N/N+
E3_5 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% ITME aro 2 wks N/N+
E3_27 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% ITME aro 2 wks N/N+
E3_63 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 16.5±10% ITME aro 2 wks N/N+
E3_17 6 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 4±10% ITME aro 2 wks N/N+
E3_25 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 20±10% ITME aro 2 wks N/N+
E3_53 8 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 30 n- Si:P 4.5±10% ITME aro 2 wks N/N+
E3_15 15 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 9.5±10% ITME aro 2 wks N/N+
E3_16 15 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 12±10% ITME aro 2 wks N/N+
E3_51 8 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 11±10% ITME aro 2 wks N/N+
E3_4 9 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 36 n- Si:P 4±10% ITME aro 2 wks N/N+
E3_23 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% ITME aro 2 wks N/N+
E3_1 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 41 n- Si:P 25±10% ITME aro 2 wks N/N+
E3_41 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 42 n- Si:P 20.5±10% ITME aro 2 wks N/N+
E3_19 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 42.5 n- Si:P 17±10% ITME aro 2 wks N/N+
E3_14 8 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 52.5 n- Si:P 12.5±10% ITME aro 2 wks N/N+
E3_56 19 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 56 n- Si:P 12±10% ITME aro 2 wks N/N+
E3_45 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 70 n- Si:P 73±10% ITME aro 2 wks N/N+
E3_33 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 72 n- Si:P 12.5±10% ITME aro 2 wks N/N+
E3_7 19 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 73 n- Si:P 84±10% ITME aro 2 wks N/N+
E3_44 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 13±10% ITME aro 2 wks N/N+
E3_49 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 11±10% ITME aro 2 wks N/N+
E3_12 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 12±10% ITME aro 2 wks N/N+
E3_10 15 3"Øx375μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 22.5 ±10% ITME aro 2 wks N/N+
E3_34 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 19.5±10% ITME aro 2 wks N/N+
E3_20 20 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 66±10% ITME aro 2 wks N/N+
E3_59 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 90
18
n- Si:P
n- Si:P
41±10%
5±10%
ITME aro 2 wks N/N/N+
E3_43 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% ITME aro 2 wks N/N+
E3_11 19 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% ITME aro 2 wks N/N+
E3_13 2 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% ITME aro 2 wks N/N+
E3_21 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% ITME aro 2 wks N/N+
E3_8 5 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% ITME aro 2 wks N/N+
E3_37 14 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% ITME aro 2 wks N/N+
E3_39 4 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% ITME aro 2 wks N/N+
E3_29 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% ITME aro 2 wks N/N+
E3_26 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% ITME aro 2 wks N/N+
E3_9 3 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% ITME aro 2 wks N/N+
E3_28 15 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% ITME aro 2 wks N/N+
E3_31 10 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% ITME aro 2 wks N/N+
E3_35 15 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% ITME aro 2 wks N/N+
E3_6 12 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% ITME aro 2 wks N/N+
E3_64 10 3"Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75
25
n- Si:P
n- Si:P
40±10%
2.5±10%
ITME aro 2 wks N/N/N+

 


100mm P/B (100) 525μm 0.008-0.020 ohm-cm DSP
100±10 N/PHn 40 - 60 ohm-cm n/p+, Back-side polished after Epi deposition
certificate available

100mm P/B (111) 400μm .01-0.10 ohm-cm SSP
6.522±1.5 p- Si:B p- Si:B .6±10% 300±50 P/P/P+

76.2mm N/As (111) 0.001-0.005 ohm-cm SSP
75 n- Si:P 11±10% N/N+