Si Item #2270
50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP Prime $6.90 In stock
Si Item #695
76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP Prime $9.90 In stock
Si Item #2462
100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP Prime $13.90 In stock
Si Item #2509 - 150mm N-type Antimony Doped (Sb) (111) 0.008-0.02 ohm-cm 675um SSP $9.90 In stock
Si Item #2518 - 200mm N-type Phosphorus Doped (100) 24-36 ohm-cm 725um SSP $19.90 In stock
The following n-type silicon wafers were used to fabricate low-cost UV-Visible broadband photodetectors. Research has discovered many new and wide ranging applications.
Si Item #589 - 100mm N/Ph (100) 1-10 ohm-cm DSP 500um Prime Grade
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Below are just some of our silicon properties that we have on sale!
We have plenty of silicon wafers at a low price and small quantitiesof partial cassettes so you can buy less than 25 wafers and as few as one Si wafer.
We carry a large selection of Silicon wafers with:
Researchers from Sweden have used our products as their silicon substrate controls. To help their work, flat silicon, phosphorus doped wafers with a resistivity of 1-10 Ohm-cm were used. This was a control substrate. The overall goal of the research was to find a way to deliver drugs to retinal cells for growth.
Control substrates, denominated flat silicon (“flat Si” or “Si flat” in Figures) consisted of (100) n-type (phosphorus) silicon wafers with a resistivity of 1–10 Ohm cm (University Wafer).
Si NW substrates were prepared by metal assisted chemical etching (MACE) of crystalline silicon in hydrofluoric acid (HF)/silver nitrate (AgNO3) aqueous solution, as previously described.16 In brief, silicon wafers [as those used as controls: (100) n-type (phosphorus), resistivity of 1–10 Ohm cm], were cleaned in acetone and isopropanol, rinsed in Milli-Q water and immersed in a piranha solution (3[thin space (1/6-em)]:[thin space (1/6-em)]1 concentrated H2SO4[thin space (1/6-em)]:[thin space (1/6-em)]30% H2O2) for 15 min at 80 °C, followed by copious rinsing in Milli-Q water. Arrays of Si NW were obtained by chemical etching of the substrate in HF/AgNO3 (6.3 M/0.02 M) Milli-Q water solution at 55 °C for 10 min. Silver was removed by immersing the substrates in two successive 4 hour-long baths of nitric acid (HNO3) at room temperature, rinsing in Milli-Q running flow during 1 min and further rinsing in a Milli-Q water bath overnight. Fig. 1 shows scanning electron microscopy (SEM) images of the main type of Si NW substrates used in this study, with 4.4 μm long nanowires of diameter ranging from 20 to 120 nm. Nanowires of different lengths (200 nm, 800 nm and 1.8 μm) were also prepared with 1 min, 3 min and 6 min etching durations, respectively. Mechanical properties of silicon.
N-type Silicon
Buy as few as one silicon n-type wafer!
FZ 6"Ø×25mm n-type Si:P[100],(7,025-7,865)Ohmcm, 1 SEMI Flat We have a large selection of Prime, Test and Mechanical Grade Undoped, Low doped and Highly doped Silicon wafers 1" - 12" Silicon Wafers low doped and highly doped in stock and ready to ship. Examples full and partial silicon wafer cassettes include:
We have Ultra-Flat Silicon with the following spec
Prime Silicon Wafers 100mm P-type /Boron doped <1-0-0> 490-510 micron 0.005-.020 ohm-cm Semi Std Double Side Polished Total Thickness Variation (TTV)<1 um. These are great for making SOI or MEMS!
The majority of our Prime Grade wafers have a roughness value Ra<5Å.
A Si wafer, or substrate, or silicon is grown in a tube from a seed into a long ingot that is then sliced into various thicknesses used in electronics for the fabrication of integrated circuits and in photovoltaics. The wafer serves as the substrate for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials, and photolithographic patterning. Finally the individual microcircuits are separated (dicing) and packaged.
Yes! We sell Platinised and thin films of almost all the metals! Just let us know the specs and quantity for an immediate quote!
Yes! We sell as few as one Silicon wafer. We sell in individual wafer carrier.
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing.
Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.[1][2][3] It involves the following chemical processes performed in sequence: Removal of the organic contaminants (organic clean + particle clean) Removal of thin oxide layer (oxide strip, optional) Removal of ionic contamination (ionic clean)
Yes! We can laser down the wafer so you could get two 100mm from one 200mm wafers including flats!
It's when you have a wafer that has thin films or oxide etc on them and we strip and clean them so the wafers can be reused. Often companies that want to save money or protect their intellectual property will reclaim their wafers.
Researcher:
I am looking to get quotes for N-type polysilicon wafers for use in MOCVD depositions. I am interested in 3" and 4" wafers with thicknesses between 200-500 um, DSP with doping greater than or equal to 10e17. The crystal quality needs to be suitable for use in a solar cell. I need 25-50 wafers.
UniversityWafer, Inc. Quoted:
N-type polysilicon wafers 4" wafers with thicknesses between 200-500 um, DSP resistivity < 0.1 ohm-cm
Price $Reference #259882
Researchers have used the following silicon wafers as an ultrasmooth surface for nanomaterials/nanosheets to take and record Atomic Force Microscopy (AFM) Images.
Item #809
100mm N/Ph (100) 1-10 ohm-cm SSP 500um Prime Grade
There are several different types of silicon wafers. SOI (silicon on insulator) wafers are made of a thin, insulator-silicium layer on a silicon substrate. This type of wafer is widely used in the fabrication of MEMS devices and thin Si optical channels. SoI wafers are grown as single crystals with a regular repeating structure, and are sliced from an ingot. The orientation of a silicon wavefront determines its electrical response, and it can be affected by ion implantation, etching, or integration with other materials.
SOI wafers are made with a thin silicon layer on a sapphire substrate. The sapphire insulator is typically un-doped. SOS wafers are used in applications that require electrical insulation. Inseto uses several parameters to distinguish between these two types of silicon wafers. Ultimately, SOS wafers can be divided into three main categories, each with their own advantages and disadvantages.
While un-doped silicon wafers are considered pure, doped silicon wafers contain impurities in the form of dopants. These wafers are generally referred to as intrinsic, extrinsic, or degenerate, depending on how much dopant is present. These are the most commonly used types in industry. A common example of a semiconductor is an LED.
Prime silicon wafers are also known as Device Grade and Particle Grade wafers. They have tighter specs and are most often used for photolithography, particle monitors, and semiconductor devices. Test and reclaimed silicon wafers have a much wider range of specifications and are called N-type wafers. They are also known as P-Type, but have a wider tolerance than prime ones.
Reclaimed wafers are also a form of silicon. These wafers have been used in semiconductor production for many years and are used as the primary component of most semiconductors. These reclaimed wafers are made in the same process as virgin wafers, but have been treated to make them suitable for reuse. These reclaimed wafers are a great way to save money.
Polished silicon wafers are mirror-smooth. Compared to unpolished silicon, they are much more uniform and have a high quality reputation. They meet the age requirements for ULSI. Glass wafers are used where transparency is required. The difference between these two types of silicon wafers is quite large. You should make sure you choose the right material for your particular project.
In semiconductor manufacturing, reclaimed silicon wafers have been stripped of the processing and are called N+. They are the most expensive to manufacture and are used in advanced CMOS devices. They can be obtained from reclaimed silicon wafers as well. These products are considered the most desirable types of silicon wafers. Once they are reclaimed, they are often sold again. But the only difference between these two types is the size.
Reclaimed silicon wafers are different from N-type. They are stripped of all previous processing and are more expensive than N-type. They are usually not transparent. However, transparent silicon wafers are used in optical devices. They are also the most expensive to produce. But they are cheaper than n-type products. This is a huge advantage of reclaimed silicon, as reclaimed silicon is much more durable than n-type.
Prime and N-grade silicon wafers are the same. They are both made from the same basic material. There are some differences, but the same fundamental principles apply to all types. Premium silicon wafers are free of defects that are common with other kinds of silicon. Despite these differences, reclaimed silicon is the most expensive type. If it's a premium grade, it has fewer imperfections.
The undoped silicon wafer is a pure silicon crystal. It's the best type of semiconductor, and is the only one that can be used for sensitive electronics. While it's not the most expensive, it's the least expensive. The only downside is that it's brittle. The silicon wafers are very sensitive to heat. They are easily cracked or chipped. In addition, they can lose their properties if they are heated.
Scientists have use the following wafers for their nanotechnology research.
Silicon (100) wafers (prime grade, 100 mm diameter, n-type, phosphorous doped, resistivity = 5{10 ohm-cm) were purchased from University Wafer. 38% HCl (aq) and 30% NH4OH (aq) were obtained from J. T. Baker; methanol and 30% H2O2 were obtained from Fisher Scientic; tetrahydrofuran (THF) and toluene were obtained from Caledon Laboratories Ltd. Ultrapure water with > 18 M cm from a Millipore Milli-Q system was used for all experiments. Six sizes of cylinder-forming PS-b-P2VP BCPs were obtained from Polymer Source: PS(125k)-b-P2VP(58.5k), PS(56k)-b-P2VP(21k), PS(50k)-b- P2VP(16.5k), PS(44k)-b-P2VP(18.5k), PS(32k)-b-P2VP(12.5k), and PS(23.6k)- b-P2VP(10.4k). Polystyrene with Mw = 192 kg/mol was obtained from Sigma Aldrich. The metallization salts Na2PtCl4 xH2O and Na2PdCl4 3H2O were obtained from Strem Chemicals.
Please contact us for complete wafer specs.