Si Item #2270
50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP Prime $6.90 In stock
Si Item #695
76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP Prime $9.90 In stock
Si Item #2462
100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP Prime $13.90 In stock
Si Item #2509 - 150mm N-type Antimony Doped (Sb) (111) 0.008-0.02 ohm-cm 675um SSP $9.90 In stock
Si Item #2518 - 200mm N-type Phosphorus Doped (100) 24-36 ohm-cm 725um SSP $19.90 In stock
The following n-type silicon wafers were used to fabricate low-cost UV-Visible broadband photodetectors. Research has discovered many new and wide ranging applications.
Si Item #589 - 100mm N/Ph (100) 1-10 ohm-cm DSP 500um Prime Grade
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Below are just one of the wafer specs that we have on sale!
We have plenty of silicon wafers at a low price and small quantitiesof partial cassettes so you can buy less than 25 wafers and as few as one Si wafer.
We carry a large selection of Silicon wafers with:
Researchers from Sweden have used our products as their silicon substrate controls. To help their work, flat silicon, phosphorus doped wafers with a resistivity of 1-10 Ohm-cm were used. This was a control substrate. The overall goal of the research was to find a way to deliver drugs to retinal cells for growth.
Control substrates, denominated flat silicon (“flat Si” or “Si flat” in Figures) consisted of (100) n-type (phosphorus) silicon wafers with a resistivity of 1–10 Ohm cm (University Wafer).
Si NW substrates were prepared by metal assisted chemical etching (MACE) of crystalline silicon in hydrofluoric acid (HF)/silver nitrate (AgNO3) aqueous solution, as previously described.16 In brief, silicon wafers [as those used as controls: (100) n-type (phosphorus), resistivity of 1–10 Ohm cm], were cleaned in acetone and isopropanol, rinsed in Milli-Q water and immersed in a piranha solution (3[thin space (1/6-em)]:[thin space (1/6-em)]1 concentrated H2SO4[thin space (1/6-em)]:[thin space (1/6-em)]30% H2O2) for 15 min at 80 °C, followed by copious rinsing in Milli-Q water. Arrays of Si NW were obtained by chemical etching of the substrate in HF/AgNO3 (6.3 M/0.02 M) Milli-Q water solution at 55 °C for 10 min. Silver was removed by immersing the substrates in two successive 4 hour-long baths of nitric acid (HNO3) at room temperature, rinsing in Milli-Q running flow during 1 min and further rinsing in a Milli-Q water bath overnight. Fig. 1 shows scanning electron microscopy (SEM) images of the main type of Si NW substrates used in this study, with 4.4 μm long nanowires of diameter ranging from 20 to 120 nm. Nanowires of different lengths (200 nm, 800 nm and 1.8 μm) were also prepared with 1 min, 3 min and 6 min etching durations, respectively.
FZ 6"Ø×25mm n-type Si:P,(7,025-7,865)Ohmcm, 1 SEMI Flat We have a large selection of Prime, Test and Mechanical Grade Undoped, Low doped and Highly doped Silicon wafers 1" - 12" Silicon Wafers low doped and highly doped in stock and ready to ship. Examples full and partial silicon wafer cassettes include:
We have Ultra-Flat Silicon with the following spec
Prime Silicon Wafers 100mm P-type /Boron doped <1-0-0> 490-510 micron 0.005-.020 ohm-cm Semi Std Double Side Polished Total Thickness Variation (TTV)<1 um. These are great for making SOI or MEMS!
The majority of our Prime Grade wafers have a roughness value Ra<5Å.
A Si wafer, or substrate, or silicon is grown in a tube from a seed into a long ingot that is then sliced into various thicknesses used in electronics for the fabrication of integrated circuits and in photovoltaics. The wafer serves as the substrate for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials, and photolithographic patterning. Finally the individual microcircuits are separated (dicing) and packaged.
Yes! We sell Platinised and thin films of almost all the metals! Just let us know the specs and quantity for an immediate quote!
Yes! We sell as few as one Silicon wafer. We sell in individual wafer carrier.
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing.
Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America. It involves the following chemical processes performed in sequence: Removal of the organic contaminants (organic clean + particle clean) Removal of thin oxide layer (oxide strip, optional) Removal of ionic contamination (ionic clean)
Yes! We can laser down the wafer so you could get two 100mm from one 200mm wafers including flats!
It's when you have a wafer that has thin films or oxide etc on them and we strip and clean them so the wafers can be reused. Often companies that want to save money or protect their intellectual property will reclaim their wafers.
I am looking to get quotes for N-type polysilicon wafers for use in MOCVD depositions. I am interested in 3" and 4" wafers with thicknesses between 200-500 um, DSP with doping greater than or equal to 10e17. The crystal quality needs to be suitable for use in a solar cell. I need 25-50 wafers.
UniversityWafer, Inc. Quoted:
N-type polysilicon wafers 4" wafers with thicknesses between 200-500 um, DSP resistivity < 0.1 ohm-cm
Price $Reference #259882