Below is a list of gettering techniques used to remove defects.
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Gettering is the process of removing impurities from the active circuit on a wafer that is normally carried out during crystal growth. It also serves as an important ingredient to facilitate the profit of VLSI production.
Defects such as precipitation and contortions are usually caught in this area of the device and the collection is divided into two types, the complicated extrinsic type. These tend to go through the process of diffusion in silicon and cause defects in the active circuit.
This tends to reduce the load on the wafer during annealing, causing a warping and thus serving as a processing point. The extrinsic nature of the toothing has to do with the stress generated by external influences to magnify the defects that must be caught by impurities that form on the back of the wafers. As for the external method of toothing, it requires sandblasting and grooving, both of which have the ability to generate stresses in the rear part of the wafer.
This method is achieved by placing loads on the back and sides without damaging the material, which normally has different semiconductor and thermal properties. The main obstacle to this method was the ability to initiate and spread micro-cracks that may be defective or may be affected by mechanical forces of the wafer. The production of wafers is a complex process in which powerful tools must be used to remove the surface of a wafer. Patterned getter materials are used, while microelectronics often provide ultra-high vacuum to seal the holes. Another form of defect on a wafer conveyor belt is mass - but the process of removing the container and collecting the lid is more difficult to get out of the container and remove it, as it tends to trap itself.
Unstable pipes can form, which leads to considerable disturbances in the ionization process. Since a little gas in an isolated part of a vacuum can affect the value of the entire system, getter is often used to supply the vacuum.
In summary, it is necessary to understand that the coated plate of the getter material is heated before the getter is inserted into the vacuum chamber part. Microelectronics uses patterned deposited materials, which are normally packed in a very high vacuum created by the closing of the holes.
To improve the effectiveness of the pump performance, activation must be maximized, but it must be done without process limitations. Finally, it is important to note that it is not advisable to listen to the getter if the entire system is not in a good vacuum.
Here we describe a silicon wafer getering design that uses the implantation of hydrocarbon molecule ions to produce CMOS image sensors. In this work, we introduce extrinsic phosphorus getterings and perform them on a high-quality silicon substrate produced for heterojunction solar cells. We study the use of extrins in the production of oxygen precipitation and oxygen oxides in high-quality photovoltaics and conduct a CMos heat treatment simulation to measure the amount of carbon dioxide (CO 2) and phosphorus (P) produced from oxygen precipitation with the same ingot on which the semiconductor silicon discs were manufactured (13A1017). Here we perform extrINSic phosphorus getter on semiconductors on silicon wafers that are produced with their oxygen content and investigate their effects on the oxygen concentrations of silicon substrates. [Sources: 0, 3, 13]
The reason why the leakage current in the SRAM is so large before this state of the art is considered to be the presence of a metal contamination which serves as the generating centre of the charge which exists in the exhaustion layer of the pn junction. V characteristic, the leakage currents are significantly reduced if they are accompanied by diffuse defects. [Sources: 1, 4]
The semiconductor silicon wafer obtained in this way is oxidized by oxidation - by stacking defects, so that its back side becomes the metal processing site. The oxygen diffuses through the metal, eliminating the defects, and oxidation leads to the formation of a new layer of pn transition. [Sources: 1, 13]
The stack fault acts as an extrinsic getter location where the impurities found in the wafer migrate and are trapped. The SiO2 side attracts ionic impurities from the silicon wafers, preventing these impurities from contaminating the device region. Since crystal defects that form during crystal growth and defects that form during metal diffusion and heat treatment are inevitable, the contaminants are deposited on the getter's deposit basins. [Sources: 5, 6, 11]
The process of intrinsic getering includes the removal of impurities from silicon wafers in the form of dopant chemical impurities. Chemical impurities are added to the polysilicon by dopsant, which, depending on the specific doping agent used, results in either N or P-type silicon. [Sources: 5, 7]
This can reduce the amount of metallic impurities that diffuse into the element - forming regions. The OISF test should have an excellent gearing effect compared to other methods such as getering or trapping, as the back side of the OisF density is much higher than the front side (e.g. silicon wafers). The resulting porous silicon layer is of great importance because it has the ability to extract the contamination from the sample. Next, we will explain the mechanism by which boron-doped amorphous silicon films achieve the excellent "getering" effect. [Sources: 1, 4, 9]
In the conventional assessment of gearing capability, it is not possible to assess whether crystal defects are necessarily present in the wafer. Therefore, there is a need for a solution that allows a complete polishing as long as the wafer still has extrinsic getter capabilities. The advantages are associated with double polishing of both sides, as particles can still be retained from the surface roughness. To prevent the contribution of intrinsic getter, which cannot be avoided by conventional methods, it will be necessary to evaluate the feasibility of extrinsic getering to silicon wafers produced with high accuracy. The ability of the Extrinsics to process offers many advantages over conventional techniques, such as using a single side polish, but without the advantages of the OISF test. [Sources: 6, 11]
Extrinsic getering is achieved by introducing a small amount of damage to the back of the wafer. Silicon wafers  are immersed in a silicon carbide powder for a short time until they completely cover the wafer . This process creates a dislocation paradise, which is delimited on the surface of the device by a pure defect - free silicon layer - which is more resistant to defects than the normal silicon wade surface. The most commonly used method is sandblasting, in which fine silicon particles of fine sand are sprayed onto the back and sides of a semiconductor wafer (silicon wafer), forming a fine grain with a surface roughness of about 1 mm (0.5 mm) per square inch . [Sources: 8, 9, 11, 13]
But this also has limitations: In order to achieve the desired concentration, large quantities of metallic impurities must be introduced into the silicon . Organic impurities are used, characterized by the presence of metals such as arsenic, cadmium, lead, mercury and lead oxide [17, 18]. [Sources: 2, 8]
The getttering process is carried out by moving impurities and impurities into the semiconductor wafer. [Sources: 5, 8, 9]
In many practical cases, the gearing process can remove impurities from the semiconductor wafer, but in some cases, it can also remove impurities. [Sources: 4]
In many practical cases, some kind of intrinsic error can be caused by the collapse of a vacancy cluster, while a variety of crystalline growth anomalies are responsible for both extrinsic and intrinsic errors. [Sources: 10, 12]