What Substrates are Used to Fabricate Film Bulk Acoustic Resonators?

Get Your Quote FAST!

We’d like to get a quote for fifty 1 inch silicon wafers with (111) orientation; or 25 1’’  (111) and 25 1’’ (100). This material plus the shipment to Mexico City.

Please tell me also how much is the minimum amount of Si wafers per order for p - i - n types (111).

If you have any other Si sales promotion now going on, please let me know, it doesn’t matter that the wafer’s diameter is not 1’’.

We are going to use these wafers for biosensor applications using FBARs. Based on your experience, would you recommend any specific kind of Si for
this purposes?

 

What is Film Bulk Acoustic Resonator?

A film bulk acoustic resonator (FBAR) is a type of resonator that uses a thin film of piezoelectric material to generate acoustic waves. These acoustic waves can be used to filter and amplify signals in electronic circuits. FBARs are commonly used in wireless communication devices such as cell phones and GPS receivers. They offer advantages over other types of resonators such as high frequency stability, low power consumption, and small size.

What Substrates are Used?

FBARs typically use a piezoelectric material, such as aluminum nitride (AlN), as the substrate. Other materials such as zinc oxide (ZnO) and Lithium Niobate (LiNbO3) can also be used. The choice of substrate material depends on the specific application requirements and performance characteristics needed. For example, AlN is often used for high frequency applications due to its high acoustic velocity and low mechanical losses, while LiNbO3 is used for its high electromechanical coupling coefficient.