Gallium Nitride on Sapphire Wafers

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1. GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate.   50 mm diam  on axis, n-type, GaN thickness ~0.5 um 
2. GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.  
3. GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness  ~(0.5-0.8) um.  AIN thickness ~0.1um.
4. GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire.  50mm in diameter, on-axis, n-type, GaN thickness  ~(0.5-0.8) um, AIN thickness ~0.1 um.

What are Gallium Nitride on Sapphire Wafers?

Gallium nitride (GaN) is a type of material that is used to make very small, very fast electronic devices. It is made up of atoms of gallium and nitrogen, and it is very good at conducting electricity and heat.

GaN wafers are very thin slices of GaN material that are used to make tiny electronic devices, like transistors and light-emitting diodes (LEDs). Transistors are like little switches that can turn electronic signals on and off very quickly, and LEDs are tiny light bulbs that can be used to make different colors of light.

GaN wafers are used in a lot of different things, like phones, TVs, and computers. They are also used in special machines that use a lot of electricity, like airplanes and electric cars.

GaN wafers are made using very advanced machines and techniques, and it takes a lot of time and skill to make them. They are very important for a lot of different technologies, and they help make our lives easier and more convenient.

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