(110) Silicon Wafer Orientation

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(110) Silicon Wafers

Please see below for just a short list of the (110) Silicon Substrates that we have in stock and ready to ship. If you don't see what you need then please email us your specs.

Diam Material Orient. Thck Surf. Resistivity Comment
(mm) Dopant (μm) Ωcm
6" p--type Si:B [110] ±0.5° 390 ±10 C/C >10 Prime, 2Flats, Empak cst
4" p--type Si:B [110] ±0.5° 500 P/E FZ >10,000 Prime, 2Flats, Empak cst, TTV<5μm
4" p--type Si:B [110] ±0.5° 200 P/P FZ 1--2 Prime, 2Flats, Empak cst
4" p--type Si:B [110] ±0.5° 200 P/P FZ 1--2 SEMI Prime, 2Flats, Empak cst
4" p--type Si:B [110] ±0.5° 200 P/P FZ 1--2 SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge
4" n--type Si:P [110] ±0.5° 500 P/P FZ >9,600 SEMI Prime, 2Flats -- Primary @ <111>±0.5° -- edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs
4" n--type Si:P [110] ±0.5° 500 P/P FZ 5,000--15,000 SEMI Prime, 2Flats -- Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs
4" n--type Si:P [110] ±0.5° 500 P/P FZ 5,000--15,000 SEMI Prime, 2Flats -- Primary @ <111>±0.5° -- edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs
4" Intrinsic Si:-- [110] 500 P/P FZ >20,000 SEMI Test (Both sides with defects), 2Flats @ [111] -- Secondary 70.5° CCW from Primary, Empak cst
4" Intrinsic Si:-- [110] ±0.5° 500 P/E FZ >15,000 Prime, 2Flats, Empak cst
4" Intrinsic Si:-- [110] ±0.5° 500 P/E FZ >15,000 Test, Small Surface Defects, 2Flats, Empak cst
4" p--type Si:B [110] ±0.25° 525 P/E 5--10 SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF, Empak cst
4" p--type Si:B [110] ±0.25° 525 P/E 5--10 SEMI Prime, 2Flats, Empak cst
4" p--type Si:B [110] ±0.5° 750 P/E 1--100 SEMI Prime (back--side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm
4" p--type Si:B [110] ±0.5° 380 P/P 1--30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
4" n--type Si:P [110] ±0.5° 525 P/P 20--80 SEMI Prime, 2Flats @ [111] -- Secondary 70.5° CW from Primary, Empak cst
4" n--type Si:P [110] ±0.5° 500 P/P 3--10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
4" n--type Si:P [110] ±0.2° 525 P/E 3--10 SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst
4" n--type Si:P [110] ±0.3° 525 P/P 3--10 SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
4" n--type Si:P [110] ±0.3° 525 P/P 3--10 SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
4" n--type Si:P [110] ±0.5° 525 P/E 3--9 SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst
4" n--type Si:P [110] ±0.5° 525 P/E 3--9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
4" n--type Si:P [110] ±0.3° 525 P/P 3--10 SEMI Prime, TTV<10�m, Bow/ Warp<30�m, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
4" n--type Si:Sb [110] ±0.5° 525 P/P 0.01--0.02 {0.0176--0.0180} Prime, 2Flats @ [111] -- Secondary 70.5° CW from Primary, Empak cst
4" ShowShoppingCartTally(); n--type Si:As [110] ±0.5° 275 P/P 0.001--0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst