When researchers need the higher purity Silicon, they use FZ Silicon substrates instead of Czochralski grown silicon.
Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications.
Below are just some of the Float Zone wafers that we have in stock.
Float-zone (FZ) silicon wafers also called undoped or intrinsic are used in applications that require purity that is much higher than Czochralski (CZ) grown silicon.
We have a large selection in stock, but we can customize any order in small and large quantities.
Researchers use the following silicon specs to fabricate Schottky barrier and heterojunction diodes:
100mm NTD FZ wafer Resistivity: 10 Ohm-mm Orientation: <111>
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Silicon wafers, especially those very high resistivity, are transparent to IR. I attach article in pdf format, providing many details on the si transparency subject. If you need silicon which is less IR transparent, we recommend using highly doped CZ wafers.
Item Qty. Description
GP15. 50/100 Silicon wafers, per SEMI Prime, P/P 4"Ø×380±5µm,
FZ Intrinsic undoped Si:-±0.5°, Ro > 20,000 Ohmcm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
Please let us know and we return with the offer.
The Infrared (IR) Transmission through undoped FZ crystallized double-side-polished Silicon wafer is >52% but only in the wavelength range (1.2-6.5) µm. Again, absorption is nill and transmission is limited by surface reflections. However, at longer wavelengths, specifically (8-14)µm, lattice absorption becomes significant and transmission drops markedly.
25.4mm Intrinsic (100) >2,000 ohm-cm SSP 280 micron
50.8mm N-Type Phosphorous Float Zone (FZ) (111) >200 ohm-cm SSP 200um
76.2mm Undoped (100) >5,000 ohm-cm SSP 500um
100mm, 150mm and 200umm Undoped Silicon Wafers in stock. All orientations, resistivities and other specs in stock.
There are a number of interesting applications of silicon wafers, largely due to the addition of technological sophistication, but also due to their practical and easy application. [Sources: 5, 7]
Speaking of product range: The study divides the market for float zone silicon wafers into P-type and N-type. On the demand side, this report focuses on the use of silicon wafers in the production of high-performance electronics, medical devices and other applications. A large stock of silicon wafers, which are available as P-type boron-doped wafers with primary flat-cut technology, is maintained as they are frequently used. This provides a good basis for research and development of the Float Zone (FZ), a test wafer that is available on request. [Sources: 0, 7, 9]
Doped silicon wafers, which are produced by adding certain impurities or doping to the silicon crystals of a manufactured prime wafer, are considered to be the highest possible silicon wafer quality. However, there are a number of prime quot wafers and the concentration and size of oxide clusters and nuclei in a given silicon wafer depends on the proportion of ingot the silicon wafer takes up. [Sources: 6, 9]
In this embodiment, the silicon wafer may be rectangular and possibly flaked off, but the excited beam may also flake off and move relative to the surface of the wafer. In addition, a silicon workpiece with a float zone can comprise a square silicon wafer with a thickness of 2 - 70 microns, which can form a floating zone with a diameter of 1.5 microns and a surface area of about 1,000 microns with a thickness of 160 - 600 microns. [Sources: 4]
In one embodiment, the floating silicon workpiece may be a wafer with a diameter of 1.5 micrometers and a surface area of about 1,000 micrometers, which is 160-600 micrometers thick, and in another, an energy-energized beam may encompass a floating zone of up to 2-70 micrometers and may chip off and move relative to the surface of the wafers. The peeling process revealed here could be used to create floating zones on silicon wadding, which have already been reduced to thicknesses of 200 to 600 micrograms, a method known as "art." A high pressure, low temperature and non-corrosive laser penetrates the surface - distributing floating silicon zones evenly - and produces a 58 mm diameter "wafer" with a depth of 2.4 - 3.2 micron needles (1 - 4.0 microns), a width of 0.1 micron watt hours (0 - 1 mm) and a floating zone with an average surface area of about 1 million square meters. [Sources: 4]
The method disclosed here for producing a large number of silicon wafers from a silicon float zone workpiece may include selective reception and retention of the float zone on the silicon workpiece, which has a peeling effect from the surface. The method may also include cutting, moving and conveying multiple silicon "wafers" from multiple silicon wafers, cutting and moving those wafers, or a combination of both. [Sources: 4]
A microwave is preferably positioned to emit an energy beam towards the peeling, removing silicon wafers less than 100 micrometers from the surface. [Sources: 4]
The thickness of the silicon wafer  is therefore defined as the minimum thickness necessary to produce the design desired by the application. The penetrating layer of silicon is peeled (i.e., peeled) and then peeled off to produce a thinner silicon wafer from the original silicon wafer as a workpiece. Silicon that is flaked off, such as microfibers or microfluidic devices, preferably has a thickness of between 2 and 70 micrometers. [Sources: 4, 10]
The float zone method is the be-all and end-all for the technology when a wafer requires high-purity silicon with little or no impurities. When it comes to growing silicon crystals on silicon wafers, the FZ method can be used in a variety of applications such as microfibers and microfluidic devices, but is typically limited to about 150 mm and can have a thickness of between 2 and 70 micrometers (ki / c cm). Silicon waves generated using float zone methods are typically described in detail in the article "Silicon Wafer Design and Production" (please contact us today) . [Sources: 1, 6, 9]
With the development of silicon wafer production technology towards integrated circuit chips (ICs) and microfluidic devices (microfibers), silicon wafers have expanded to a size of about 25 mm silicon wafers. The lower ASP of silicone wafers is due to the pressure of the solar and PV cell industry. [Sources: 3, 9]
If you are looking for a highly efficient wafer for radio frequency technology, float zone wafers may be the right choice for you. Silicon for the floating zone is a good choice of material and is used for detector applications, but can also be used in other applications, for example as detector material for high performance sensors. [Sources: 2, 8]
If you contact UniversityWafer, Inc. today, you can learn more and purchase your float zone silicon wafers from the best floating zone wafer vendors. UniversityWafer, Inc. is one of the leading suppliers of high-quality float zone silicon wafers and makes you your silicon wafer supplier. True - premium wafers are the product of UniversityWafer, Inc., a leading supplier of silicon wafers. The manufacturing company with over 30 years of experience in the semiconductor manufacturing sector offers all services for silicone wafer recovery and polishing for 100 - 300 mm silicon wafers. [Sources: 1, 9]