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3", 350um, DSP
Quantity: 25 wafers
Polycrystalline silicon wafers inhomogeneous background makes it difficult for researchers to automatically segment defects.
A computer can't know what a defect on a silicon wafer looks like. So it needs to be told what a defect looks like. The computer has to be taught. It has to be shown lots of examples of what a defect looks like, and it has to be shown lots of examples of what the silicon wafer background looks like. And then, after the computer has been taught what a defect looks like, and what the silicon wafer background looks like, the computer can look at a new image and tell whether it contains defects or not.
The mathematical model used to calculate surface roughness is as follows:
1. The cutting depth of abrasives is discretized as the cutting groove and wire profile during the sawing process.
2. Material removal mode of abrasives is judged by cutting depth.
3. According to the calculation nodes closest to the sawn surface, the wafer surface profile and roughness along the feed speed direction are calculated. 4. The results showed that the relationships between surface roughness and feed speed Vf, wire speed Vs and their ratio Vf /Vs satisfied power functions. 5.
Finally, the calculation result of surface roughness was used to generate a 3D surface morphology of wafer.
Polycrystalline silicon is the most commonly used material for silicon solar cells. The slicing process is the first mechanical processing step of battery cells, the quality of sawn surface affects the cost of subsequent processes such as texture making, also affects the breaking strength of battery cells and the photoelectric conversion efficiency and other performances. In this paper, polycrystalline silicon sawing experiments are carried out, and the effects of main process parameters, such as the workpiece feed speed, the wire moving speed, the ratio of the workpiece feed speed to the wire moving speed, and the sawn workpiece size, on the surface morphology and roughness Ra of the photovoltaic polycrystalline silicon slice are analyzed. Orthogonal experimental method was used to analyze the primary and secondary order and positive and negative effects of various factors on surface morphology and surface roughness, the optimum process parameters were obtained, and the wear morphology and mechanism of wire were analyzed. The research results show that: within the range of process parameters studied in this paper, the surface morphology of polycrystalline silicon slices shows a comprehensive effect of material ductility and brittleness removal.