(100) Orientation Silicon Wafers with Standard Flats or Notches

university wafer substrates

(100) Oriented Silicon Wafers

We have a large selection fo (100) orientation Silicon Substrates in stock and ready to ship. Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Get Your (100) Silicon Wafer Quote FAST!


Why do Silicon Wafers have Notches, Flats or are Perflectly Round?

Wafers under 200mm have Flats. Wafers that are 200mm or larger have notches. Notches were first introduced with 200mm wafers in 1992.

Flats help determine the silicon wafers crystalline orientation. But not always! Some clients perfer to have just one flat on their Si wafers for whatever reason. When you see Semiconductor or SEMI standards then you know you'll have the industry standard flats.

Silicon Wafer Flat Positions by Orientation

(100) oriented wafers cleave easier and uniformily compared to other orientations such as (111).

Slicon Wafer Orienting Flats Position

 

Silicon Wafer Flat Length by Diameter

Below are the SEMI standard flat length by diameter. 200mm Silicon Wafers and larger usually have V notches instead of flats.

Diameter of Silicon Wafer: 50 mm (2") and Flat Length

1. Primary flat  on (01 T) plane ± 0.5°.
2. Secondary flat  90° ± 1° ccw to primary flat
3. Primary flat length:  15.9 ± 1.5 mm
4. Secondary flat length:  8.0 ± 1.5 mm

Diameter of Silicon Wafer: 75 mm (3") and Flat Length

1. Primary flat  on (01 T) plane ± 0.5°.
2. Secondary flat:  90° ± 1° ccw to primary flat.
3. Primary flat length:  22.2 ± 2.0 mm
4. Secondary flat length:  11.2 ± 1.5 mm

Diameter of Silicon Wafer: 100 mm (4") and Flat Length

Thickness: 525 um (20.5 mils)
Primary flat length: 32.5 mm
Secondary flat length: 18.0 mm
Bow, max: 40 um
Warp, max: 40 um
TTV (flatness), max: 10 um
Primary flat orientation: <110>

Diameter of Silicon Wafer: 150 mm (6") and Flat Length

Thickness: 675 um (26.3 mils)
Primary flat length: 57.5 mm
Secondary flat length: 37.5 mm
Bow, max: 60 um
Warp, max: 60 um
TTV (flatness), max: 10 um
Primary flat orientation: <110>

 

Silicon Substrates with a (100) Orientation

Below are just some of the wafers that we have in stock.

Item Material Orient. Diam(mm) Thck(μm) Surf Res Ωcm Comment
H201 P/B [100] 4" 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
G201 P/B [100] 4" 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
6269 P/B [100-4° towards[110]] ±0.5° 4" 525 P/E FZ >2,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
N942 P/B [100] 4" 420 C/C FZ 850-900 SEMI Prime, 2Flats, Empak cst
6288 P/B [100] 4" 200 ±10 P/P FZ 100-120 SEMI Prime, 1Flat, Empak cst
4902 P/B [100] 4" 250 P/P FZ 1-3 {0.97-1.01} SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs.
6100 P/B [100-6.0° towards[111]] ±0.5° 4" 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
5630 n-type Si:P [100] 4" 400 ±10 P/P FZ 6,000-8,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
3861 n-type Si:P [100] 4" 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back-side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
H411 n-type Si:P [100] 4" 380 P/E FZ 5,000-10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
J724 n-type Si:P [100] 4" 425 C/C FZ >5,000 2Flats (p-type flats on n-type wafers), Empak cst
2355 n-type Si:P [100-1.5° towards[110]] ±0.5° 4" 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
E454 n-type Si:P [100] 4" 500 G/G FZ 4,300-6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
G050 n-type Si:P [100] 4" 525 P/E FZ 4,200-8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
E180 n-type Si:P [100] ±0.2° 4" 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
6241 n-type Si:P [100] 4" 400 ±10 P/P FZ 3,100-6,800 SEMI Prime, 2Flats, TTV<5μm
I937 n-type Si:P [100] 4" 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
2454 n-type Si:P [100] 4" 400 P/E FZ 2,000-6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
5683 n-type Si:P [100] 4" 400 P/E FZ 2,000-6,500 SEMI, 2Flats, Empak cst
S5798 n-type Si:P [100] 4" 915 ±10 E/E FZ 2,000-3,000 1Flat at [100], Empak cst
E189 n-type Si:P [100] 4" 300 L/L FZ 1,100-1,600 SEMI, 1Flat, Empak cst
S6284 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
E290 n-type Si:P [100] 4" 200 ±10 BROKEN FZ 800-1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
D189 n-type Si:P [100] 4" 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
H189 n-type Si:P [100] 4" 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
5625 n-type Si:P [100] 4" 500 P/P FZ 400-1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5543 n-type Si:P [100] 4" 500 P/P FZ 198-200 SEMI Prime, 1Flat, Empak cst
6195 n-type Si:P [100] 4" 500 P/P FZ 50-70 SEMI Prime, 1Flat, Empak cst
5973 n-type Si:P [100] 4" 570 ±10 E/E FZ 50-70 SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs.
F843 n-type Si:P [100] 4" 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
G843 n-type Si:P [100] 4" 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
6099 n-type Si:P [100-6°] ±0.5° 4" 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
6128 n-type Si:P [100] 4" 525 P/P FZ 1-5 SEMI Prime, 2Flats, Empak cst
C976 n-type Si:P [100-4° towards[111]] ±0.5° 4" 525 P/E FZ 1-10 {3.2-4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
D301 Intrinsic Si:- [100] 4" 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
6301 Intrinsic Si:- [100] 4" 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6367 Intrinsic Si:- [100] 4" 350 P/P FZ >20,000 Prime, 1Flat, Empak cst, TTV<5μm
5821 Intrinsic Si:- [100] 4" 400 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
I693 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides
6356 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<2μm
S962 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer
F051 Intrinsic Si:- [100] 4" 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
J146 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
K146 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
G444 Intrinsic Si:- [100] 4" 300 P/E FZ 16,000-20,000 SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
L330 Intrinsic Si:- [100] 4" 500 P/E FZ 13,000-20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish
6133 Intrinsic Si:- [100] 4" 300 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
6061 Intrinsic Si:- [100] 4" 500 P/E FZ >10,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
E775 Intrinsic Si:- [100] 4" 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
G412 Intrinsic Si:- [100] 4" 800 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
6297 Intrinsic Si:- [100] 4" 1,000 P/P FZ >2,000 SEMI Prime, 1Flat, Empak cst
6243 P/B [100] 4" 1,000 P/P 200-700 Prime, NO Flats, Empak cst
5584 P/B [100] 4" 3,000 P/E 46-50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
I808 P/B [100] 4" 500 P/P 10-20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
K483 P/B [100] 4" 515 ±10 P/P 10-20 SEMI Prime, 2Flats, Empak cst
5949 P/B [100] 4" 750 P/P 10-20 SEMI Prime, 2Flats, Empak cst
6159 P/B [100] 4" 1,000 P/P 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6230 P/B [100] 4" 1,000 P/P 10-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
G511 P/B [100] 4" 300 P/P 8-12 SEMI TEST - Front-side badly polished, 2Flats, Empak cst
S5762 P/B [100] 4" 610 ±10 E/E 8-12 1Flat at [100], Empak cst
F060 P/B [100] 4" 300 P/P 5-10 SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re-polished for extra fee
F994 P/B [100] 4" 300 P/P 5-10 {6-7} SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
6274 P/B [100] 4" 300 P/P 5-10 SEMI Prime, 2Flats, Empak cst
5727 P/B [100] 4" 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
6059 P/B [100] 4" 380 P/E 5-10 SEMI Prime, 2Flats, Empak cst
C649 P/B [100] 4" 380 P/E 5-10 SEMI TEST (with bad surface), 1Flat, Empak cst
D819 P/B [100] 4" 380 P/E 5-10 SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal
E136 P/B [100] 4" 380 P/E 5-10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
C815 P/B [100] 4" 380 BROKEN 5-10 Broken P/E Wafers, 1Flat, in Empak
D259 P/B [100] 4" 380 BROKEN 5-10 Broken P/E Wafers, 2Flats, in Empak
D649 P/B [100] 4" 380 BROKEN 5-10 Broken (largest piece is ~30%), 1Flat, in Empak
6223 P/B [100] 4" 525 P/E 5-10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
B247 P/B [100] 4" 525 P/E 5-10 SEMI, 2Flats, Empak cst
E326 P/B [100] 4" 525 P/E 5-10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
H452 P/B [100] 4" 525 P/E 5-10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
6331 P/B [100] 4" 1,000 P/E 5-10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6313 P/B [100] 4" 525 P/E 4.1-4.5 Prime, NO Flats, Empak cst
5644 P/B [100] 4" 250 ±10 P/P 1-5 {4.1-4.7} SEMI Prime, 2Flats, Empak cst, TTV<5μm
6273 P/B [100-4.0°] ±0.5° 4" 275 P/E 1-30 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5997 P/B [100] 4" 300 P/P 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst
E485 P/B [100-4° towards[110]] ±0.5° 4" 300 P/E 1-10 ohm-cm SEMI Test, 2Flats, Empak cst, Wafers with pits
M334 P/B [100] 4" 381 ±5 P/P 1-30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
G189 P/B [100] 4" 475 P/E 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
5440 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188.
B742 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
C742 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
J440 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188.
K440 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188.
L440 P/B [100] 4" 500 P/P 1-50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
6197 P/B [100] 4" 525 P/P 1-5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F307 P/B [100] 4" 525 P/P 1-10 ohm-cm SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
G672 P/B [100] 4" 525 P/P 1-10 ohm-cm SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
S216 P/B [100] 4" 525 P/P 1-5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
6200 P/B [100-4° towards[110]] ±0.5° 4" 525 P/E 1-20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6242 P/B [100] 4" 525 P/E 1-5 SEMI Prime, 1Flat, Empak cst
F485 P/B [100] 4" 525 P/E 1-20 Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst
4959 P/B [100] 4" 525 NP/PN 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
D959 P/B [100] 4" 525 NOxP/POxN 1-10 ohm-cm SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
S5841 P/B [100-0.5°] 4" 590 ±10 E/E 1-3 SEMI Prime, 2Flats
6347 P/B [100] 4" 1,200 P/P 1-15 SEMI Prime, 2Flats, Empak cst
N347 P/B [100] 4" 1,200 P/P 1-15 Prime, 1Flat, Empak cst
4829 P/B [100] 4" 2,100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
3996 P/B [100] 4" 3,000 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
6058 P/B [100] 4" 3,000 P/E 1-30 SEMI, 2Flats, Individual cst
B594 P/B [100] 4" 3,175 P/P 1-10 ohm-cm SEMI Prime, 2Flats, Individual cst, TTV<8μm
K588 P/B [100] 4" 3,175 P/P 1-10 ohm-cm SEMI Prime, 2Flats, Individual cst, TTV<8μm
2586 P/B [100] 4" 3,200 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
6015 P/B [100] 4" 4,000 P/P 1-100 SEMI Prime, 2Flats, Individual cst
5737 P/B [100] 4" 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
6348 P/B [100] 4" 525 P/E 0.1-0.2 SEMI Prime, 2Flats, Empak cst
2612 P/B [100] 4" 350 P/E 0.095-0.130 SEMI Prime, 2Flats, Empak cst
3031 P/B [100-6° towards[110]] ±0.5° 4" 525 P/E 0.015-0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
5833 P/B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
G780 P/B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
5771 P/B [100-4°] ±0.5° 4" 380 ±10 P/P 0.01-0.02 SEMI Prime, Empak cst, TTV<2μm
6349 P/B [100] 4" 525 P/E 0.01-0.02 SEMI, 2Flats, Empak cst
T155 P/B [100] 4" 525 P/POx 0.008-0.020 SEMI Prime, 2Flats, Empak cst
5419 P/B [100] 4" 300 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
I135 P/B [100] 4" 500 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
6073 P/B [100] 4" 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
6209 P/B [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
K173 P/B [100] 4" 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces), 1Flat
5420 P/B [100] 4" 800 C/C 0.001-0.005 SEMI, 2Flats, Empak cst, With striation marks
6214 P/B [100] 4" 2,000 P/P 0.001-0.005 SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
S5774 P/B [100] 4" ? P/P ? SEMI Test, 2Flats, Empak cst
D939 P/B [100] 4" 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
S5002 n-type Si:P [100] 4" 310 ±10 P/P 20-30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee 
5892 n-type Si:P [100] 4" 350 P/P 20-23 SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
G827 n-type Si:P [100] 4" 525 P/E 10-30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
5924 n-type Si:P [100] 4" 5,800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
D389 n-type Si:P [100] 4" 5,800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
5337 n-type Si:P [100-4° towards[111]] 4" 525 P/E 11-Sep SEMI Prime, 2Flats, Empak cst
5849 n-type Si:P [100] 4" 525 P/E 11-Jul SEMI Prime, 2Flats, Empak cst
P849 n-type Si:P [100] 4" 525 P/E 11-Jul SEMI Prime, 2Flats, Empak cst
5171 n-type Si:P [100] 4" 224 P/E 5-10 SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers
D033 n-type Si:P [100] 4" 224 BROKEN 5-10 SEMI Test, 2Flats, Empak cst
L758 n-type Si:P [100] 4" 500 P/P 3-6 SEMI Prime, 2Flats, Empak cst
D830 n-type Si:P [100] 4" 350 ±10 P/P 3-5 SEMI Prime, 2Flats, Empak cst
E830 n-type Si:P [100] 4" 350 P/P 3-5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches
B752 n-type Si:P [100] 4" 450 C/C 3-5 SEMI Prime, 2Flats, Empak cst
6032 n-type Si:P [100] 4" 525 P/E 3-9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
C925 n-type Si:P [100] 4" 500 ±10 P/P 5-Feb SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers
6224 n-type Si:P [100] 4" 525 ±10 P/P 6-Feb SEMI Prime, 1Flat, Empak cst
S5920 n-type Si:P [100] 4" 250 ±5 P/P 1-100 SEMI Prime, TTV<3μm, Empak cst
5322 n-type Si:P [100] 4" 280 ±2 P/P 1-10 ohm-cm SEMI Prime, 1Flat, Empak cst, TTV<2μm
O173 n-type Si:P [100] 4" 280 P/P 1-5 SEMI Prime, 2Flats, Empak cst
5772 n-type Si:P [100] ±0.2° 4" 400 ±10 P/P 1-3 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6001 n-type Si:P [100] 4" 400 ±10 P/P 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm
I762 n-type Si:P [100] ±1° 4" 400 ±10 P/P 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm
J762 n-type Si:P [100] ±1° 4" 400 ±10 P/P 1-10 ohm-cm SEMI Test, 2Flats, Empak cst, TTV<5μm
5903 n-type Si:P [100] 4" 400 P/E 6-Jan SEMI Prime, 2Flats, Empak cst
S5763 n-type Si:P [100] ±1° 4" 465 ±10 E/E 1-3 SEMI, 1Flat, Empak cst
6246 n-type Si:P [100] 4" 500 ±10 P/P 1-100 SEMI, 2Flats, Empak cst
F826 n-type Si:P [100] 4" 10,000 E/E 1-100 SEMI Test, 2Flats, Individual cst
6082 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
6158 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
P243 n-type Si:P [100] 4" 300 P/E 0.29-0.31 SEMI Prime, 2Flats, Empak cst
6134 n-type Si:P [100] 4" 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched
E134 n-type Si:P [100] 4" 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Both sides with scratches
F134 n-type Si:P [100] 4" 200 P/E 0.10-0.15 SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish
E031 n-type Si:Sb [100-6° towards[110]] ±0.5° 4" 525 P/E 0.015-0.020 SEMI Prime, 2Flats, Empak cst
5899 n-type Si:Sb [100] 4" 305 ±3 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6138 n-type Si:Sb [100] 4" 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
F138 n-type Si:Sb [100] 4" 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
6304 n-type Si:As [100] 4" 525 P/E 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
J304 n-type Si:As [100] 4" 525 P/E 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
U671 n-type Si:As [100] 4" 545 E/E 0.002-0.004 SEMI, 1Flat, Empak cst
F562 n-type Si:As [100] 4" 525 PlyAP/E 0.001-0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
 
5677 n-type Si:As [100] 4" 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst
F219 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
F734 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
E720 n-type Si:As [100] 4" 550 ±10 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
5029 P/B [100] 4" 380 OxP/EOx 5-10 SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick
D234 n-type Si:P [100] 4" 500 P/P FZ >5,000 Prime, NO Flats, Empak cst
5198 n-type Si:P [100] 4" 800 P/P FZ 2,000-3,000 SEMI Prime, 1Flat, TTV<5μm, Empak cst
5798 n-type Si:P [100] 4" 800 P/P FZ 2,000-3,000 SEMI Prime, 1Flat at [100], TTV<5μm, Empak cst
F837 n-type Si:P [100] 4" 500 P/P FZ 198-200 SEMI Prime, 2Flats, Empak cst
E099 n-type Si:P [100-6°] ±0.5° 4" 325 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
F266 Intrinsic Si:- [100] 4" 300 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
F103 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
6103 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
H412 Intrinsic Si:- [100] 4" 650 P/P FZ >10,000 SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm
16L P/B [100] 4" 300 P/E 800-5,400 SEMI Prime, 1Flat, Empak cst
15W2 P/B [100] 4" 500 P/P 10-20 SEMI Prime, 2Flats, Empak cst
S5755 P/B [100] 4" 1,500 P/P >10 SEMI Prime, 2Flats, TTV<2μm, Empak cst,
21F P/B [100] 4" 3,000 P/E/P 10-15 SEMI Prime, 1Flat, Individual cst
16P1 P/B [100-6°] 4" 250 P/E 8-12 SEMI Prime, 2Flats, Empak cst
15U2 P/B [100] 4" 1,000 P/E 6-7 SEMI Prime, 2Flats, Empak cst
21Q1 P/B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst
16F P/B [100-6°] 4" 525 P/E 3-6 SEMI Prime, 2Flats, Empak cst
S5793 P/B [100] 4" 500 P/P 2-10 SEMI Prime, 2Flats, Empak cst
1.60E+04 P/B [100] 4" 200 P/P 1-20 SEMI Prime, 1Flat, Empak cst
H684 P/B [100] 4" 200 P/P 1-5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
15V2 P/B [100] 4" 250 P/E 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst
16R3 P/B [100] 4" 300 P/E/P 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst
16H2 P/B [100-10°] 4" 300 P/E 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst
16C1 P/B [100] 4" 500 P/P 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst
S5750 P/B [100] 4" 500 P/P 2-10 SEMI Prime, 2Flats, Empak cst
16B2 P/B [100-6°] 4" 525 P/E 1-100 SEMI Prime, 1Flat, Empak cst
5778 P/B [100] ±1° 4" 480 P/P 0.1-1.0 SEMI Prime, TTV<3μm, Empak cst
S5809 P/B [100-4°] ±0.5° 4" 381 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
17U1 P/B [100] 4" 800 P/EP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
20W2 P/B [100] 4" 3,100 P/P CZ 0.006-0.009 SEMI Prime, 2Flats, Individual cst
17V1 P/B [100-6°] 4" 525 P/E 0.0042-0.0047 SEMI Prime, 2Flats, Empak cst
J772 P/B [100] 4" 150 ±15 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<2μm
16Y2 n-type Si:P [100] 4" 200 P/P 49-57 SEMI Prime, 2Flats, Empak cst
16Z6 n-type Si:P [100] 4" 400 P/E 32-70 SEMI Prime, 2Flats, Empak cst
18S1 n-type Si:P [100] 4" 400 P/P 17-19 Prime, NO Flats, Empak cst
16V4 n-type Si:P [100] 4" 700 P/E 14-18 Prime, NO Flats, Empak cst
18U2 n-type Si:P [100] 4" 250 P/E 11-13 SEMI Prime, 2Flats, Empak cst
18V1 n-type Si:P [100] 4" 400 P/P 10-18 SEMI Prime, 2Flats, Empak cst
16T1 n-type Si:P [100] 4" 525 P/E 5-10 SEMI Prime, 1Flat, Empak cst
16X3 n-type Si:P [100] 4" 259 P/P 3-5 SEMI Prime, 2Flats, Empak cst
R610 n-type Si:P [100] 4" 475 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<2μm
J066 n-type Si:P [100] 4" 500 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<1μm, With Lasermark
5777 n-type Si:P [100] 4" 525 ±10 P/P 1-100 SEMI Prime, 1Flat, Empak cst, TTV<5μm
18Q1 n-type Si:P [100-4°] 4" 525 P/E/P 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst
16U2 n-type Si:P [100-2°] 4" 525 P/E >1 SEMI Prime, 2Flats, Empak cst
L353 n-type Si:P [100] 4" 600 P/P 1-100 SEMI Prime, 2Flats, TTV<2μm, Bow<20μm, Warp<30μm, Empak cst
17C2 n-type Si:P [100] 4" 1,000 P/P 1-20 SEMI Prime, 2Flats, Empak cst
21S3 n-type Si:P [100] 4" 2,500 P/P 1-100 SEMI Prime, 2Flats, Individual cst
18L1 n-type Si:Sb [100] 4" 450 P/E ~0.03 SEMI Prime, 1Flat, Empak cst
18H1 n-type Si:Sb [100] 4" 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
T169 n-type Si:Sb [100] ±0.2° 4" 250 P/P 0.01-0.05 SEMI Prime, 2Flats, Empak cst
K725 n-type Si:Sb [100] 4" 310 ±15 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
18K1 n-type Si:Sb [100] 4" 600 P/E 0.01-0.03 Strange Flats
21V n-type Si:Sb [100-4°] 4" 1,500 P/E/P 0.005-0.030 SEMI Prime, 2Flats, Empak cst
20X1 n-type Si:Sb [100] 4" 1,500 P/E/P 0.001-0.030 SEMI Prime, 2Flats, Empak cst
17H1 Intrinsic Si:- [100] 4" 525 P/E 400-1,000 SEMI Prime, 1Flat, Empak cst