(100) Orientation Silicon Wafers

university wafer, a researcher's best friend
University Silicon Wafer for Production

Get Your (100) Silicon Wafer Quote FAST!


 

(100) Oriented Silicon Wafers

We have a large selection fo (100) orientation Silicon Substrates in stock and ready to ship. Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item Qty in Material Orient. Diam Thck Surf. Resistivity Comment
Stock (mm) (μm) Ωcm
H201 45 p-type Si:B [100] 4" 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
G201 75 p-type Si:B [100] 4" 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
6269 14 p-type Si:B [100-4° towards[110]] ±0.5° 4" 525 P/E FZ >2,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
N942 67 p-type Si:B [100] 4" 420 C/C FZ 850-900 SEMI Prime, 2Flats, Empak cst
6288 11 p-type Si:B [100] 4" 200 ±10 P/P FZ 100-120 SEMI Prime, 1Flat, Empak cst
4902 94 p-type Si:B [100] 4" 250 P/P FZ 1-3 {0.97-1.01} SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs.
6100 4 p-type Si:B [100-6.0° towards[111]] ±0.5° 4" 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
5630 4 n-type Si:P [100] 4" 400 ±10 P/P FZ 6,000-8,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
3861 9 n-type Si:P [100] 4" 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back-side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
H411 2 n-type Si:P [100] 4" 380 P/E FZ 5,000-10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
J724 7 n-type Si:P [100] 4" 425 C/C FZ >5,000 2Flats (p-type flats on n-type wafers), Empak cst
2355 4 n-type Si:P [100-1.5° towards[110]] ±0.5° 4" 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
E454 17 n-type Si:P [100] 4" 500 G/G FZ 4,300-6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
G050 20 n-type Si:P [100] 4" 525 P/E FZ 4,200-8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
E180 13 n-type Si:P [100] ±0.2° 4" 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
6241 25 n-type Si:P [100] 4" 400 ±10 P/P FZ 3,100-6,800 SEMI Prime, 2Flats, TTV<5μm
I937 22 n-type Si:P [100] 4" 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
2454 6 n-type Si:P [100] 4" 400 P/E FZ 2,000-6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
5683 20 n-type Si:P [100] 4" 400 P/E FZ 2,000-6,500 SEMI, 2Flats, Empak cst
S5798 15 n-type Si:P [100] 4" 915 ±10 E/E FZ 2,000-3,000 1Flat at [100], Empak cst
E189 48 n-type Si:P [100] 4" 300 L/L FZ 1,100-1,600 SEMI, 1Flat, Empak cst
S6284 1 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
E290 9 n-type Si:P [100] 4" 200 ±10 BROKEN FZ 800-1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
D189 25 n-type Si:P [100] 4" 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
H189 25 n-type Si:P [100] 4" 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
5625 15 n-type Si:P [100] 4" 500 P/P FZ 400-1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5543 9 n-type Si:P [100] 4" 500 P/P FZ 198-200 SEMI Prime, 1Flat, Empak cst
6195 18 n-type Si:P [100] 4" 500 P/P FZ 50-70 SEMI Prime, 1Flat, Empak cst
5973 35 n-type Si:P [100] 4" 570 ±10 E/E FZ 50-70 SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs.
F843 38 n-type Si:P [100] 4" 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
G843 5 n-type Si:P [100] 4" 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
6099 13 n-type Si:P [100-6°] ±0.5° 4" 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
6128 4 n-type Si:P [100] 4" 525 P/P FZ 1-5 SEMI Prime, 2Flats, Empak cst
C976 5 n-type Si:P [100-4° towards[111]] ±0.5° 4" 525 P/E FZ 1-10 {3.2-4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
D301 5 Intrinsic Si:- [100] 4" 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
6301 25 Intrinsic Si:- [100] 4" 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6367 50 Intrinsic Si:- [100] 4" 350 P/P FZ >20,000 Prime, 1Flat, Empak cst, TTV<5μm
5821 25 Intrinsic Si:- [100] 4" 400 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
I693 4 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides
6356 75 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<2μm
S962 5 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer
F051 69 Intrinsic Si:- [100] 4" 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
J146 9 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
K146 1 Intrinsic Si:- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
G444 4 Intrinsic Si:- [100] 4" 300 P/E FZ 16,000-20,000 SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
L330 1 Intrinsic Si:- [100] 4" 500 P/E FZ 13,000-20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish
6133 50 Intrinsic Si:- [100] 4" 300 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
6061 25 Intrinsic Si:- [100] 4" 500 P/E FZ >10,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
E775 4 Intrinsic Si:- [100] 4" 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
G412 17 Intrinsic Si:- [100] 4" 800 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
6297 50 Intrinsic Si:- [100] 4" 1,000 P/P FZ >2,000 SEMI Prime, 1Flat, Empak cst
6243 10 p-type Si:B [100] 4" 1,000 P/P 200-700 Prime, NO Flats, Empak cst
5584 6 p-type Si:B [100] 4" 3,000 P/E 46-50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
I808 4 p-type Si:B [100] 4" 500 P/P 10--20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
K483 175 p-type Si:B [100] 4" 515 ±10 P/P 10--20 SEMI Prime, 2Flats, Empak cst
5949 24 p-type Si:B [100] 4" 750 P/P 10--20 SEMI Prime, 2Flats, Empak cst
6159 225 p-type Si:B [100] 4" 1,000 P/P 10--20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6230 275 p-type Si:B [100] 4" 1,000 P/P 10--20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
G511 2 p-type Si:B [100] 4" 300 P/P 8--12 SEMI TEST - Front-side badly polished, 2Flats, Empak cst
S5762 9 p-type Si:B [100] 4" 610 ±10 E/E 8--12 1Flat at [100], Empak cst
F060 4 p-type Si:B [100] 4" 300 P/P 5--10 SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re-polished for extra fee
F994 24 p-type Si:B [100] 4" 300 P/P 5-10 {6-7} SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
6274 600 p-type Si:B [100] 4" 300 P/P 5--10 SEMI Prime, 2Flats, Empak cst
5727 2 p-type Si:B [100] 4" 380 P/E 5--10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
6059 800 p-type Si:B [100] 4" 380 P/E 5--10 SEMI Prime, 2Flats, Empak cst
C649 1 p-type Si:B [100] 4" 380 P/E 5--10 SEMI TEST (with bad surface), 1Flat, Empak cst
D819 1 p-type Si:B [100] 4" 380 P/E 5--10 SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal
E136 24 p-type Si:B [100] 4" 380 P/E 5--10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
C815 2 p-type Si:B [100] 4" 380 BROKEN 5--10 Broken P/E Wafers, 1Flat, in Empak
D259 2 p-type Si:B [100] 4" 380 BROKEN 5--10 Broken P/E Wafers, 2Flats, in Empak
D649 1 p-type Si:B [100] 4" 380 BROKEN 5--10 Broken (largest piece is ~30%), 1Flat, in Empak
6223 325 p-type Si:B [100] 4" 525 P/E 5--10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
B247 5 p-type Si:B [100] 4" 525 P/E 5--10 SEMI, 2Flats, Empak cst
E326 21 p-type Si:B [100] 4" 525 P/E 5--10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
H452 24 p-type Si:B [100] 4" 525 P/E 5--10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
6331 200 p-type Si:B [100] 4" 1,000 P/E 5--10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6313 23 p-type Si:B [100] 4" 525 P/E 4.1-4.5 Prime, NO Flats, Empak cst
5644 23 p-type Si:B [100] 4" 250 ±10 P/P 1-5 {4.1-4.7} SEMI Prime, 2Flats, Empak cst, TTV<5μm
6273 10 p-type Si:B [100-4.0°] ±0.5° 4" 275 P/E 1--30 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5997 9 p-type Si:B [100] 4" 300 P/P 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst
E485 3 p-type Si:B [100-4° towards[110]] ±0.5° 4" 300 P/E 1--10 ohm-cm SEMI Test, 2Flats, Empak cst, Wafers with pits
M334 3 p-type Si:B [100] 4" 381 ±5 P/P 1--30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
G189 10 p-type Si:B [100] 4" 475 P/E 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
5440 25 p-type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188.
B742 25 p-type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
C742 25 p-type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
J440 20 p-type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188.
K440 7 p-type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188.
L440 50 p-type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
6197 500 p-type Si:B [100] 4" 525 P/P 1--5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F307 12 p-type Si:B [100] 4" 525 P/P 1--10 ohm-cm SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
G672 24 p-type Si:B [100] 4" 525 P/P 1--10 ohm-cm SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
S216 100 p-type Si:B [100] 4" 525 P/P 1--5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
6200 15 p-type Si:B [100-4° towards[110]] ±0.5° 4" 525 P/E 1--20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6242 20 p-type Si:B [100] 4" 525 P/E 1--5 SEMI Prime, 1Flat, Empak cst
F485 8 p-type Si:B [100] 4" 525 P/E 1--20 Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst
4959 23 p-type Si:B [100] 4" 525 NP/PN 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
D959 25 p-type Si:B [100] 4" 525 NOxP/POxN 1--10 ohm-cm SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
S5841 26 p-type Si:B [100-0.5°] 4" 590 ±10 E/E 1--3 SEMI Prime, 2Flats
6347 18 p-type Si:B [100] 4" 1,200 P/P 1--15 SEMI Prime, 2Flats, Empak cst
N347 5 p-type Si:B [100] 4" 1,200 P/P 1--15 Prime, 1Flat, Empak cst
4829 25 p-type Si:B [100] 4" 2,100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
3996 7 p-type Si:B [100] 4" 3,000 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
6058 10 p-type Si:B [100] 4" 3,000 P/E 1--30 SEMI, 2Flats, Individual cst
B594 10 p-type Si:B [100] 4" 3,175 P/P 1--10 ohm-cm SEMI Prime, 2Flats, Individual cst, TTV<8μm
K588 2 p-type Si:B [100] 4" 3,175 P/P 1--10 ohm-cm SEMI Prime, 2Flats, Individual cst, TTV<8μm
2586 9 p-type Si:B [100] 4" 3,200 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
6015 3 p-type Si:B [100] 4" 4,000 P/P 1-100 SEMI Prime, 2Flats, Individual cst
5737 4 p-type Si:B [100] 4" 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
6348 300 p-type Si:B [100] 4" 525 P/E 0.1-0.2 SEMI Prime, 2Flats, Empak cst
2612 5 p-type Si:B [100] 4" 350 P/E 0.095-0.130 SEMI Prime, 2Flats, Empak cst
3031 5 p-type Si:B [100-6° towards[110]] ±0.5° 4" 525 P/E 0.015-0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
5833 425 p-type Si:B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
G780 141 p-type Si:B [100] 4" 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
5771 25 p-type Si:B [100-4°] ±0.5° 4" 380 ±10 P/P 0.01-0.02 SEMI Prime, Empak cst, TTV<2μm
6349 300 p-type Si:B [100] 4" 525 P/E 0.01-0.02 SEMI, 2Flats, Empak cst
T155 10 p-type Si:B [100] 4" 525 P/POx 0.008-0.020 SEMI Prime, 2Flats, Empak cst
5419 25 p-type Si:B [100] 4" 300 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
I135 44 p-type Si:B [100] 4" 500 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
6073 300 p-type Si:B [100] 4" 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
6209 450 p-type Si:B [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
K173 1 p-type Si:B [100] 4" 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces), 1Flat
5420 85 p-type Si:B [100] 4" 800 C/C 0.001-0.005 SEMI, 2Flats, Empak cst, With striation marks
6214 5 p-type Si:B [100] 4" 2,000 P/P 0.001-0.005 SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
S5774 1 p-type Si:B [100] 4" ? P/P ? SEMI Test, 2Flats, Empak cst
D939 25 p-type Si:B [100] 4" 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
S5002 8 n-type Si:P [100] 4" 310 ±10 P/P 20-30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee 
5892 21 n-type Si:P [100] 4" 350 P/P 20-23 SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
G827 14 n-type Si:P [100] 4" 525 P/E 10--30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
5924 5 n-type Si:P [100] 4" 5,800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
D389 5 n-type Si:P [100] 4" 5,800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
5337 11 n-type Si:P [100-4° towards[111]] 4" 525 P/E 11-Sep SEMI Prime, 2Flats, Empak cst
5849 23 n-type Si:P [100] 4" 525 P/E 11-Jul SEMI Prime, 2Flats, Empak cst
P849 18 n-type Si:P [100] 4" 525 P/E 11-Jul SEMI Prime, 2Flats, Empak cst
5171 25 n-type Si:P [100] 4" 224 P/E 5--10 SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers
D033 23 n-type Si:P [100] 4" 224 BROKEN 5--10 SEMI Test, 2Flats, Empak cst
L758 3 n-type Si:P [100] 4" 500 P/P 3--6 SEMI Prime, 2Flats, Empak cst
D830 8 n-type Si:P [100] 4" 350 ±10 P/P 3--5 SEMI Prime, 2Flats, Empak cst
E830 8 n-type Si:P [100] 4" 350 P/P 3--5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches
B752 38 n-type Si:P [100] 4" 450 C/C 3--5 SEMI Prime, 2Flats, Empak cst
6032 275 n-type Si:P [100] 4" 525 P/E 3--9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
C925 14 n-type Si:P [100] 4" 500 ±10 P/P 5-Feb SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers
6224 250 n-type Si:P [100] 4" 525 ±10 P/P 6-Feb SEMI Prime, 1Flat, Empak cst
S5920 2 n-type Si:P [100] 4" 250 ±5 P/P 1-100 SEMI Prime, TTV<3μm, Empak cst
5322 25 n-type Si:P [100] 4" 280 ±2 P/P 1--10 ohm-cm SEMI Prime, 1Flat, Empak cst, TTV<2μm
O173 100 n-type Si:P [100] 4" 280 P/P 1--5 SEMI Prime, 2Flats, Empak cst
5772 5 n-type Si:P [100] ±0.2° 4" 400 ±10 P/P 1--3 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6001 125 n-type Si:P [100] 4" 400 ±10 P/P 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm
I762 100 n-type Si:P [100] ±1° 4" 400 ±10 P/P 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm
J762 25 n-type Si:P [100] ±1° 4" 400 ±10 P/P 1--10 ohm-cm SEMI Test, 2Flats, Empak cst, TTV<5μm
5903 6 n-type Si:P [100] 4" 400 P/E 6-Jan SEMI Prime, 2Flats, Empak cst
S5763 11 n-type Si:P [100] ±1° 4" 465 ±10 E/E 1--3 SEMI, 1Flat, Empak cst
6246 11 n-type Si:P [100] 4" 500 ±10 P/P 1-100 SEMI, 2Flats, Empak cst
F826 1 n-type Si:P [100] 4" 10,000 E/E 1-100 SEMI Test, 2Flats, Individual cst
6082 25 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
6158 200 n-type Si:P [100] 4" 525 P/E 0.3-0.5 SEMI Prime, 2Flats, Empak cst
P243 20 n-type Si:P [100] 4" 300 P/E 0.29-0.31 SEMI Prime, 2Flats, Empak cst
6134 7 n-type Si:P [100] 4" 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched
E134 40 n-type Si:P [100] 4" 200 P/P 0.10-0.15 SEMI Test, 2Flats, Empak cst, Both sides with scratches
F134 25 n-type Si:P [100] 4" 200 P/E 0.10-0.15 SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish
E031 25 n-type Si:Sb [100-6° towards[110]] ±0.5° 4" 525 P/E 0.015-0.020 SEMI Prime, 2Flats, Empak cst
5899 10 n-type Si:Sb [100] 4" 305 ±3 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6138 150 n-type Si:Sb [100] 4" 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
F138 75 n-type Si:Sb [100] 4" 525 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
6304 50 n-type Si:As [100] 4" 525 P/E 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
J304 5 n-type Si:As [100] 4" 525 P/E 0.0025-0.0035 SEMI Prime, 2Flats, Empak cst
U671 15 n-type Si:As [100] 4" 545 E/E 0.002-0.004 SEMI, 1Flat, Empak cst
F562 3 n-type Si:As [100] 4" 525 PlyAP/E 0.001-0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
[More Info]
5677 68 n-type Si:As [100] 4" 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst
F219 1 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
F734 200 n-type Si:As [100] 4" 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
E720 44 n-type Si:As [100] 4" 550 ±10 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
5029 17 p-type Si:B [100] 4" 380 OxP/EOx 5--10 SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick
D234 10 n-type Si:P [100] 4" 500 P/P FZ >5,000 Prime, NO Flats, Empak cst
5198 5 n-type Si:P [100] 4" 800 P/P FZ 2,000-3,000 SEMI Prime, 1Flat, TTV<5μm, Empak cst
5798 10 n-type Si:P [100] 4" 800 P/P FZ 2,000-3,000 SEMI Prime, 1Flat at [100], TTV<5μm, Empak cst
F837 21 n-type Si:P [100] 4" 500 P/P FZ 198-200 SEMI Prime, 2Flats, Empak cst
E099 12 n-type Si:P [100-6°] ±0.5° 4" 325 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
F266 25 Intrinsic Si:- [100] 4" 300 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
F103 10 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
6103 25 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
H412 15 Intrinsic Si:- [100] 4" 650 P/P FZ >10,000 SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm
16L 4 p-type Si:B [100] 4" 300 P/E 800-5,400 SEMI Prime, 1Flat, Empak cst
15W2 25 p-type Si:B [100] 4" 500 P/P 10--20 SEMI Prime, 2Flats, Empak cst
S5755 21 p-type Si:B [100] 4" 1,500 P/P >10 SEMI Prime, 2Flats, TTV<2μm, Empak cst,
21F 10 p-type Si:B [100] 4" 3,000 P/E/P 10--15 SEMI Prime, 1Flat, Individual cst
16P1 7 p-type Si:B [100-6°] 4" 250 P/E 8--12 SEMI Prime, 2Flats, Empak cst
15U2 25 p-type Si:B [100] 4" 1,000 P/E 6--7 SEMI Prime, 2Flats, Empak cst
21Q1 25 p-type Si:B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst
16F 13 p-type Si:B [100-6°] 4" 525 P/E 3--6 SEMI Prime, 2Flats, Empak cst
S5793 25 p-type Si:B [100] 4" 500 P/P 2--10 SEMI Prime, 2Flats, Empak cst
1.60E+04 22 p-type Si:B [100] 4" 200 P/P 1--20 SEMI Prime, 1Flat, Empak cst
H684 5 p-type Si:B [100] 4" 200 P/P 1--5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
15V2 25 p-type Si:B [100] 4" 250 P/E 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst
16R3 25 p-type Si:B [100] 4" 300 P/E/P 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst
16H2 8 p-type Si:B [100-10°] 4" 300 P/E 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst
16C1 10 p-type Si:B [100] 4" 500 P/P 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst
S5750 25 p-type Si:B [100] 4" 500 P/P 2--10 SEMI Prime, 2Flats, Empak cst
16B2 13 p-type Si:B [100-6°] 4" 525 P/E 1-100 SEMI Prime, 1Flat, Empak cst
5778 13 p-type Si:B [100] ±1° 4" 480 P/P 0.1-1.0 SEMI Prime, TTV<3μm, Empak cst
S5809 14 p-type Si:B [100-4°] ±0.5° 4" 381 P/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst
17U1 50 p-type Si:B [100] 4" 800 P/EP 0.01-0.02 SEMI Prime, 2Flats, Empak cst
20W2 27 p-type Si:B [100] 4" 3,100 P/P CZ 0.006-0.009 SEMI Prime, 2Flats, Individual cst
17V1 10 p-type Si:B [100-6°] 4" 525 P/E 0.0042-0.0047 SEMI Prime, 2Flats, Empak cst
J772 25 p-type Si:B [100] 4" 150 ±15 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, TTV<2μm
16Y2 15 n-type Si:P [100] 4" 200 P/P 49-57 SEMI Prime, 2Flats, Empak cst
16Z6 25 n-type Si:P [100] 4" 400 P/E 32-70 SEMI Prime, 2Flats, Empak cst
18S1 25 n-type Si:P [100] 4" 400 P/P 17-19 Prime, NO Flats, Empak cst
16V4 25 n-type Si:P [100] 4" 700 P/E 14-18 Prime, NO Flats, Empak cst
18U2 25 n-type Si:P [100] 4" 250 P/E 11--13 SEMI Prime, 2Flats, Empak cst
18V1 20 n-type Si:P [100] 4" 400 P/P 10--18 SEMI Prime, 2Flats, Empak cst
16T1 50 n-type Si:P [100] 4" 525 P/E 5--10 SEMI Prime, 1Flat, Empak cst
16X3 24 n-type Si:P [100] 4" 259 P/P 3--5 SEMI Prime, 2Flats, Empak cst
R610 10 n-type Si:P [100] 4" 475 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<2μm
J066 10 n-type Si:P [100] 4" 500 P/P 1-100 SEMI Prime, 2Flats, Empak cst, TTV<1μm, With Lasermark
5777 2 n-type Si:P [100] 4" 525 ±10 P/P 1-100 SEMI Prime, 1Flat, Empak cst, TTV<5μm
18Q1 11 n-type Si:P [100-4°] 4" 525 P/E/P 1--10 ohm-cm SEMI Prime, 2Flats, Empak cst
16U2 14 n-type Si:P [100-2°] 4" 525 P/E >1 SEMI Prime, 2Flats, Empak cst
L353 5 n-type Si:P [100] 4" 600 P/P 1-100 SEMI Prime, 2Flats, TTV<2μm, Bow<20μm, Warp<30μm, Empak cst
17C2 6 n-type Si:P [100] 4" 1,000 P/P 1--20 SEMI Prime, 2Flats, Empak cst
21S3 7 n-type Si:P [100] 4" 2,500 P/P 1-100 SEMI Prime, 2Flats, Individual cst
18L1 4 n-type Si:Sb [100] 4" 450 P/E ~0.03 SEMI Prime, 1Flat, Empak cst
18H1 6 n-type Si:Sb [100] 4" 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
T169 3 n-type Si:Sb [100] ±0.2° 4" 250 P/P 0.01-0.05 SEMI Prime, 2Flats, Empak cst
K725 23 n-type Si:Sb [100] 4" 310 ±15 P/P 0.010-0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
18K1 18 n-type Si:Sb [100] 4" 600 P/E 0.01-0.03 Strange Flats
21V 8 n-type Si:Sb [100-4°] 4" 1,500 P/E/P 0.005-0.030 SEMI Prime, 2Flats, Empak cst
20X1 17 n-type Si:Sb [100] 4" 1,500 P/E/P 0.001-0.030 SEMI Prime, 2Flats, Empak cst
17H1 3 Intrinsic Si:- [100] 4" 525 P/E 400-1,000 SEMI Prime, 1Flat, Empak cst