100mm Silicon Wafers

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University Silicon Wafer for Production

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We have one of the world's largest selection of silicon wafers.

We have Total Thickness Varations (TTV) <1 micron in stock. We also sell 100mm Silicon Ingots.

We can dice your 100mm Silicon Wafers into any dimension and can laser the wafer into any diameter.

We have all grades including:

  • Prime Grade
  • Test Grade
  • Monitor/Mechanical Grade

We also have 100mm wafer that can be used as Carrier Wafers for all your wafer bonding needs.

100mm Silicon Wafer Test Grade

100mm (4 Inch) Silicon Wafers

We have a large selection of 100mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity.

Item Dia Type Dopant Orie Res (Ohm-cm) Thick (um) Polish Grade Description
452 100mm P B <100> 0-100 500um SSP Test The ever-versatile 4" Test-Grade. One of our most popular items!
453 100mm P B <100> 0-100 500um DSP Test Double-Side Polished Silicon Wafers at affordable prices!
589 100mm N P <100> 0-100 500um DSP Test Double Side Polished silicon wafers, test grade.
590 100mm N P <100> 0-100 500um SSP Test Silicon wafers, N-type, Test Grade.
775 100mm P B <100> 1 - 10 500um DSP Prime  
783 100mm P B <100> 1 - 10 500um SSP Prime  
785 100mm P B <100> 0.001 - 0.005 525um SSP Prime Degenerate doped Si wafers.
809 100mm N P <100> 1-10 500um SSP Prime  
1095 100mm N P <100> 1-10 525um DSP Prime  
1113 100mm N As <100> .001-.005 500 um SSP Prime Degenerately doped silicon. Double side polished wafers also available.
1114 100mm P B <100> 5-10 380um SSP  
1115 100mm P B <100> 10-20 500um DSP Prime  
1116 100mm P B <100> 10-20 500um SSP Prime  
1196 100mm ANY ANY ANY >500um SSP MECH MECHANICAL GRADE, POOR QUALITY.
1248 100mm N P <100> 10-9999 240-260um E/E  
1249 100mm P B <100> 10-9999 240-260um E/E  
1317 100mm P B <100> 1-20 1000um SSP Prime  
1575 100mm P B <100> 0.01-0.02 525um SSP Prime Primary flat SEMI (011)+/-1 deg., 30-35mm Secondary flat SEMI 90 +/-5 deg., 16-20mm
1720 100mm P B <100> 1-20 200um DSP  
1816 100mm P B <100> 5-10 525um SSP Test TTV<15um
 
Item Qty in Material Orient. Diam Thck Surf. Resistivity Comment
Stock (mm) (μm) Ωcm
1077 1 N/Ph [100] 100mm 470um DSP FZ >1,000 Buy as few as one online
2901 23 P/Boron [100] 100mm 200um DSP FZ >1000  
2648 200 Undoped [100] 100mm 500um SSP FZ >10,000  Prime Grade Lifetime >1,200us, Surface Roughness <5A
2950 200 Undoped [100] 100mm 500um DSP FZ >5000   
2272 300 Intrinsic Si:- [100] 100mm 500um DSP FZ >20,000 Prime Grade
MEMC150SB 150 N/Sb [100] 100mm 625 SSP 0.01-0.02 2 SEMI Flats
6268 14 p--type Si:B [110] ±0.5° 4" 500 P/E FZ >10,000 Prime, 2Flats, Empak cst, TTV<5μm
5585 50 p--type Si:B [110] ±0.5° 4" 200 P/P FZ 1--2 SEMI Prime, 2Flats, Empak cst
H585 14 p--type Si:B [110] ±0.5° 4" 200 P/P FZ 1--2 Prime, 2Flats, Empak cst
I585 9 p--type Si:B [110] ±0.5° 4" 200 P/P FZ 1--2 SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge
H201 45 p--type Si:B [100] 4" 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
G201 75 p--type Si:B [100] 4" 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
6269 14 p--type Si:B [100--4° towards[110]] ±0.5° 4" 525 P/E FZ >2,000 SEMI Prime, Empak cst, TTV<5μm
N942 67 p--type Si:B [100] 4" 420 C/C FZ 850--900 SEMI Prime, 2Flats, Empak cst
4902 119 p--type Si:B [100] 4" 250 P/P FZ 1--3 {0.97--1.01} SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs.
6100 4 p--type Si:B [100--6.0° towards[111]] ±0.5° 4" 350 P/P FZ 1--10 SEMI Prime, 2Flats, Empak cst
E791 4 p--type Si:B [100] 4" 500 P/P FZ 1--5 SEMI Prime, 2Flats, Empak cst
4219 50 p--type Si:B [111] ±0.5° 4" 400 ±15 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs
L173 71 p--type Si:B [111] ±0.5° 4" 397 P/E FZ 10,000--15,000 SEMI Prime, Backside ACID Etched, Empak cst
4400 50 n--type Si:P [110] ±0.5° 4" 500 P/P FZ >9,600 SEMI Prime, 2Flats -- Primary @ <111>±0.5° -- edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs
B400 12 n--type Si:P [110] ±0.5° 4" 500 P/P FZ 5,000--15,000 SEMI Prime, 2Flats -- Primary @ <111>±0.5° -- edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs
N391 21 n--type Si:P [110] ±0.5° 4" 500 P/P FZ 5,000--15,000 SEMI Prime, 2Flats -- Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs
5630 4 n--type Si:P [100] 4" 400 ±10 P/P FZ 6,000--8,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
3861 9 n--type Si:P [100] 4" 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back--side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
H411 2 n--type Si:P [100] 4" 380 P/E FZ 5,000--10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
J724 7 n--type Si:P [100] 4" 425 C/C FZ >5,000 2Flats (p--type flats on n--type wafers), Empak cst
2355 4 n--type Si:P [100--1.5° towards[110]] ±0.5° 4" 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
E454 17 n--type Si:P [100] 4" 500 G/G FZ 4,300--6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
G050 20 n--type Si:P [100] 4" 525 P/E FZ 4,200--8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
E180 13 n--type Si:P [100] ±0.2° 4" 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
6241 25 n--type Si:P [100] 4" 400 ±10 P/P FZ 3,100--6,800 SEMI Prime, 2Flats, TTV<5μm
I937 22 n--type Si:P [100] 4" 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
2454 6 n--type Si:P [100] 4" 400 P/E FZ 2,000--6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
5683 20 n--type Si:P [100] 4" 400 P/E FZ 2,000--6,500 SEMI, 2Flats, Empak cst
S5798 15 n--type Si:P [100] 4" 915 ±10 E/E FZ 2,000--3,000 1Flat at [100], Empak cst
E189 48 n--type Si:P [100] 4" 300 L/L FZ 1,100--1,600 SEMI, 1Flat, Empak cst
S6284 1 n--type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
E290 9 n--type Si:P [100] 4" 200 ±10 BROKEN FZ 800--1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
D189 25 n--type Si:P [100] 4" 300 L/L FZ 800--1,500 SEMI, 1Flat, Empak cst
H189 25 n--type Si:P [100] 4" 300 L/L FZ 800--1,500 SEMI, 1Flat, Empak cst
5625 15 n--type Si:P [100] 4" 500 P/P FZ 400--1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5543 9 n--type Si:P [100] 4" 500 P/P FZ 198--200 SEMI Prime, 1Flat, Empak cst
6195 18 n--type Si:P [100] 4" 500 P/P FZ 50--70 SEMI Prime, 1Flat, Empak cst
5973 35 n--type Si:P [100] 4" 570 ±10 E/E FZ 50--70 SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs.
F843 38 n--type Si:P [100] 4" 300 P/P FZ 1.2--2.0 SEMI Prime, 2Flats, MCC Lifetime (370--420)μs, Empak cst
G843 5 n--type Si:P [100] 4" 300 P/P FZ 1.2--2.0 SEMI Prime, 2Flats, MCC Lifetime (370--420)μs, Empak cst
6099 13 n--type Si:P [100--6°] ±0.5° 4" 350 P/P FZ 1--10 SEMI Prime, 2Flats, Empak cst
6128 4 n--type Si:P [100] 4" 525 P/P FZ 1--5 SEMI Prime, 2Flats, Empak cst
C976 5 n--type Si:P [100--4° towards[111]] ±0.5° 4" 525 P/E FZ 1--10 {3.2--4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
C170 19 n--type Si:P [111] ±0.5° 4" 500 P/E FZ 10,000--15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
K845 3 n--type Si:P [111] ±0.25° 4" 675 P/E FZ 10,000--20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst,
1679 7 n--type Si:P [111] ±0.5° 4" 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back--side Fine Ground
B465 14 n--type Si:P [111] ±0.5° 4" 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
D465 13 n--type Si:P [111] ±0.5° 4" 675 P/E FZ >7,000 SEMI, 1Flat, in Empak, Lifetime>1,600μs
E465 1 n--type Si:P [111] ±0.5° 4" 675 P/E FZ >7,000 SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs
G845 1 n--type Si:P [111] ±0.25° 4" 675 P/E FZ 7,000--10,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches
Q212 2 n--type Si:P [111] ±0.5° 4" 150 ±10 BROKEN FZ 5,000--10,000 Broken P/E wafers, in Empak
B852 25 n--type Si:P [111] ±0.5° 4" 525 P/E FZ >5,000 SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst
D852 1 n--type Si:P [111--1° towards[110]] ±0.5° 4" 525 P/E FZ >5,000 SEMI TEST (scratches on back--side), 1Flat, Empak cst
D850 8 n--type Si:P [111] ±0.25° 4" 675 P/E FZ 5,000--7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs
F845 1 n--type Si:P [111] ±0.25° 4" 675 P/E FZ 5,000--7,000 SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak
2773 20 n--type Si:P [111] ±0.5° 4" 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst
2777 21 n--type Si:P [111] ±0.5° 4" 525 P/P FZ >3,000 SEMI Prime, 1Flat (32.5mm)
G773 15 n--type Si:P [111] ±0.5° 4" 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers
L845 10 n--type Si:P [111] ±0.25° 4" 525 P/E FZ 3,000--5,000 SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers
M845 2 n--type Si:P [111] ±0.25° 4" 525 P/E FZ 3,000--5,000 SEMI TEST (light scratches), 1Flat, Empak cst
I192 5 n--type Si:P [111] ±0.5° 4" 290 ±10 P/P FZ 2,500--3,500 SEMI TEST (Surface defects), 2Flats, Empak cst
F278 12 n--type Si:P [111] ±1° 4" 380 P/E FZ 2,000--3,000 SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers
D717 9 n--type Si:P [111] ±0.5° 4" 525 P/E FZ 1,500--3,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs
B236 6 n--type Si:P [111] ±0.5° 4" 200 P/P FZ 430--550 SEMI Prime, 1Flat, Empak cst
C236 50 n--type Si:P [111] ±0.5° 4" 525 P/E FZ 430--550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
D236 10 n--type Si:P [111] ±0.5° 4" 525 P/E FZ 430--550 SEMI Prime, 1Flat, Empak cst, TTV<7μm
S5808 17 n--type Si:P [111] ±1° 4" 475 P/E FZ 400--800 Polished but unsealed and dirty. Can be polished and cleaned for additional charge. SEMI, 1Flat, Empak cst
2932 19 n--type Si:P [111] ±0.5° 4" 500 ±13 E/E FZ 6.03--7.37 SEMI, 2Flats
6122 10 n--type Si:P [111] ±0.5° 4" 1,000 P/P FZ 0.011--0.013 Prime, NO Flats, Empak cst
5731 25 n--type Si:P [112--3° towards[11--1]] ±0.5° 4" 762 P/P FZ >100 SEMI Prime, 1Flat, Empak cst
S5767 68 n--type Si:P [112--5° towards[11--1]] ±0.5° 4" 762 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm
5739 10 n--type Si:P [112--5° towards[11--1]] ±0.5° 4" 765 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm
B987 11 n--type Si:P [112--5° towards[11--1]] ±0.5° 4" 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
K184 12 Intrinsic Si:-- [110] 4" 500 P/P FZ >20,000 SEMI Test (Both sides with defects), 2Flats @ [111] -- Secondary 70.5° CCW from Primary, Empak cst
6301 100 Intrinsic Si:-- [100] 4" 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6266 50 Intrinsic Si:-- [100] 4" 300 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5821 25 Intrinsic Si:-- [100] 4" 400 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
I693 4 Intrinsic Si:-- [100] 4" 500 P/P FZ >20,000 SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides
S962 5 Intrinsic Si:-- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer
6051 50 Intrinsic Si:-- [100] 4" 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
F051 69 Intrinsic Si:-- [100] 4" 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
K146 2 Intrinsic Si:-- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
J146 5 Intrinsic Si:-- [100] 4" 1,000 P/P FZ >20,000 Prime, 1Flat, Empak cst
G444 4 Intrinsic Si:-- [100] 4" 300 P/E FZ 16,000--20,000 SEMI Prime, 1Flat, Empak cst, Back--side polish is imperfect
L330 1 Intrinsic Si:-- [100] 4" 500 P/E FZ 13,000--20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front--side Prime polish, Back--side light polish
6133 50 Intrinsic Si:-- [100] 4" 300 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
6061 40 Intrinsic Si:-- [100] 4" 500 P/E FZ >10,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
E775 4 Intrinsic Si:-- [100] 4" 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
G412 17 Intrinsic Si:-- [100] 4" 800 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
6297 50 Intrinsic Si:-- [100] 4" 1,000 P/P FZ >2,000 SEMI Prime, 1Flat, Empak cst
6137 57 Intrinsic Si:-- [111] ±0.5° 4" 500 P/P FZ >25,000 SEMI Prime, 1Flat, Empak cst
3697 46 Intrinsic Si:-- [111] ±0.5° 4" 300 P/E FZ 20,000--40,000 SEMI, 1Flat, TTV<5μm, Empak cst
E384 17 Intrinsic Si:-- [111] ±0.5° 4" 450 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
R698 4 Intrinsic Si:-- [111] ±0.5° 4" 500 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, Extra 3 free non--prime wafers included with 4 prime wafers
J219 25 Intrinsic Si:-- [111] ±0.5° 4" 500 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
5542 23 p--type Si:B [110] ±0.25° 4" 525 P/E 5--10 SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF, Empak cst
6097 75 p--type Si:B [110] ±0.25° 4" 525 P/E 5--10 SEMI Prime, 2Flats, Empak cst
F764 50 p--type Si:B [110] ±0.5° 4" 380 P/P 1--30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
D636 9 p--type Si:B [110] ±0.5° 4" 750 P/E 1--100 SEMI Prime (back--side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm
6243 12 p--type Si:B [100] 4" 1,000 P/P 200--700 Prime, NO Flats, Empak cst
5584 6 p--type Si:B [100] 4" 3,000 P/E 46--50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers
I808 4 p--type Si:B [100] 4" 500 P/P 10--20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
K483 200 p--type Si:B [100] 4" 515 ±10 P/P 10--20 SEMI Prime, 2Flats, Empak cst
5949 24 p--type Si:B [100] 4" 750 P/P 10--20 SEMI Prime, 2Flats, Empak cst
6159 275 p--type Si:B [100] 4" 1,000 P/P 10--20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6230 275 p--type Si:B [100] 4" 1,000 P/P 10--20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
G511 2 p--type Si:B [100] 4" 300 P/P 8--12 SEMI TEST -- Front--side badly polished, 2Flats, Empak cst
S5762 9 p--type Si:B [100] 4" 610 ±10 E/E 8--12 1Flat at [100], Empak cst
5994 25 p--type Si:B [100] 4" 300 P/P 5--10 {6--7} SEMI Prime, 2Flats, Empak cst, TTV<9μm
F994 24 p--type Si:B [100] 4" 300 P/P 5--10 {6--7} SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers
6274 600 p--type Si:B [100] 4" 300 P/P 5--10 SEMI Prime, 2Flats, Empak cst
5727 2 p--type Si:B [100] 4" 380 P/E 5--10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
6059 800 p--type Si:B [100] 4" 380 P/E 5--10 SEMI Prime, 2Flats, Empak cst
C649 1 p--type Si:B [100] 4" 380 P/E 5--10 SEMI TEST (with bad surface), 1Flat, Empak cst
D819 1 p--type Si:B [100] 4" 380 P/E 5--10 SEMI Prime, 1Flat, hard cst, Back--side slightly darker than normal
E136 24 p--type Si:B [100] 4" 380 P/E 5--10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee
C815 2 p--type Si:B [100] 4" 380 BROKEN 5--10 Broken P/E Wafers, 1Flat, in Empak
D259 2 p--type Si:B [100] 4" 380 BROKEN 5--10 Broken P/E Wafers, 2Flats, in Empak
D649 1 p--type Si:B [100] 4" 380 BROKEN 5--10 Broken (largest piece is ~30%), 1Flat, in Empak
6223 375 p--type Si:B [100] 4" 525 P/E 5--10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
B247 5 p--type Si:B [100] 4" 525 P/E 5--10 SEMI, 2Flats, Empak cst
E326 21 p--type Si:B [100] 4" 525 P/E 5--10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers
H452 24 p--type Si:B [100] 4" 525 P/E 5--10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
6019 175 p--type Si:B [100] 4" 1,000 P/E 5--10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6313 24 p--type Si:B [100] 4" 525 P/E 4.1--4.5 Prime, NO Flats, Empak cst
5644 23 p--type Si:B [100] 4" 250 ±10 P/P 1--5 {4.1--4.7} SEMI Prime, 2Flats, Empak cst, TTV<5μm
6273 10 p--type Si:B [100--4.0°] ±0.5° 4" 275 P/E 1--30 SEMI Prime, 1Flat, Empak cst, TTV<5μm
5997 9 p--type Si:B [100] 4" 300 P/P 1--10 SEMI Prime, 2Flats, Empak cst
E485 3 p--type Si:B [100--4° towards[110]] ±0.5° 4" 300 P/E 1--10 SEMI Test, 2Flats, Empak cst, Wafers with pits
M334 3 p--type Si:B [100] 4" 381 ±5 P/P 1--30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
G189 10 p--type Si:B [100] 4" 475 P/E 1--10 SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
5440 25 p--type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2--0.9)E16/cc per ASTM F1319, Oxygen content (9.4--8.8)E17/cc per ASTM F1188.
B742 25 p--type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319.
C742 25 p--type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319.
J440 20 p--type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3--2.2)E16/cc per ASTM F1319, Oxygen content (7.9--7.7)E17/cc per ASTM F1188.
K440 7 p--type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9--1.1)E16/cc per ASTM F1319, Oxygen content (8.4--8.0)E17/cc per ASTM F1188.
L440 50 p--type Si:B [100] 4" 500 P/P 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8--14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
6197 500 p--type Si:B [100] 4" 525 P/P 1--10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F307 12 p--type Si:B [100] 4" 525 P/P 1--10 SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
G672 24 p--type Si:B [100] 4" 525 P/P 1--10 SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
S216 100 p--type Si:B [100] 4" 525 P/P 1--5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
6200 15 p--type Si:B [100--4° towards[110]] ±0.5° 4" 525 P/E 1--20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6242 10 p--type Si:B [100] 4" 525 P/E 1--5 SEMI Prime, 1Flat, Empak cst
4959 25 p--type Si:B [100] 4" 525 NP/PN 1--10 SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
D959 25 p--type Si:B [100] 4" 525 NOxP/POxN 1--10 SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
S5841 26 p--type Si:B [100--0.5°] 4" 590 ±10 E/E 1--3 SEMI Prime, 2Flats
4829 25 p--type Si:B [100] 4" 2,100 P/E 1--100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
3996 7 p--type Si:B [100] 4" 3,000 P/E 1--100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
6058 10 p--type Si:B [100] 4" 3,000 P/E 1--30 SEMI, 2Flats, Individual cst
B594 10 p--type Si:B [100] 4" 3,175 P/P 1--10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
K588 2 p--type Si:B [100] 4" 3,175 P/P 1--10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
2586 9 p--type Si:B [100] 4" 3,200 P/E 1--100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
6015 4 p--type Si:B [100] 4" 4,000 P/P 1--100 SEMI Prime, 2Flats, Individual cst
5737 4 p--type Si:B [100] 4" 890 ±15 P/P 0.5--10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
5990 100 p--type Si:B [100] 4" 525 P/E 0.1--0.2 SEMI Prime, 2Flats, Empak cst
2612 5 p--type Si:B [100] 4" 350 P/E 0.095--0.130 SEMI Prime, 2Flats, Empak cst
3031 5 p--type Si:B [100--6° towards[110]] ±0.5° 4" 525 P/E 0.015--0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
5833 450 p--type Si:B [100] 4" 300 E/E 0.01--0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
G780 141 p--type Si:B [100] 4" 300 E/E 0.01--0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
5771 25 p--type Si:B [100--4°] ±0.5° 4" 380 ±10 P/P 0.01--0.02 SEMI Prime, Empak cst, TTV<2μm
6140 90 p--type Si:B [100] 4" 525 P/E 0.01--0.02 SEMI, 2Flats, Empak cst, TTV<5μm
T155 10 p--type Si:B [100] 4" 525 P/POx 0.008--0.020 SEMI Prime, 2Flats, Empak cst
I135 44 p--type Si:B [100] 4" 500 P/P 0.001--0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
J135 25 p--type Si:B [100] 4" 500 P/P 0.001--0.005 SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened
6073 300 p--type Si:B [100] 4" 525 P/P 0.001--0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
6209 500 p--type Si:B [100] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst
K173 1 p--type Si:B [100] 4" 525 BROKEN 0.001--0.005 Broken wafer (shattered into many pieces), 1Flat
5420 85 p--type Si:B [100] 4" 800 C/C 0.001--0.005 SEMI, 2Flats, Empak cst, With striation marks
6214 5 p--type Si:B [100] 4" 2,000 P/P 0.001--0.005 SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
S5774 1 p--type Si:B [100] 4" ? P/P ? SEMI Test, 2Flats, Empak cst
D939 25 p--type Si:B [100] 4" 375 P/E <0.0015 {0.00091--0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
I374 15 p--type Si:B [111] 4" 350 P/E 2--3 Prime, NO Flats, Empak cst
L620 20 p--type Si:B [111] 4" 1,000 P/P 1--10 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers
M620 7 p--type Si:B [111] 4" 1,000 P/P 1--10 SEMI Prime, 1Flat, Empak cst
D677 15 p--type Si:B [111] ±0.5° 4" 1,000 P/E 1--10 SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
D891 3 p--type Si:B [111] ±0.5° 4" 525 P/P 0.2--1.0 SEMI Prime, 1Flat, Empak cst
E891 20 p--type Si:B [111] ±0.5° 4" 525 P/P 0.2--1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
4279 225 p--type Si:B [111--4°] ±0.5° 4" 525 P/E 0.01--0.02 SEMI Prime, 1Flat, Empak cst
C228 25 p--type Si:B [111--4°] ±0.5° 4" 525 ±15 P/EOx 0.005--0.015 {0.0086--0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back--side
1223 9 p--type Si:B [111--3°] ±0.5° 4" 525 P/E 0.002--0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
D858 20 p--type Si:B [111--3°] 4" 525 P/E 0.002--0.004 SEMI Prime, 1Flat, Empak cst
4949 75 p--type Si:B [111] ±0.5° 4" 1,000 P/E <0.01 SEMI Prime, 1Flat, Empak cst
L403 20 p--type Si:B [112] ±0.5° 4" 500 P/P 1--100 SEMI Prime, 1Flat at <1,1,--1>, Empak cst
3623 18 n--type Si:P [110] ±0.5° 4" 525 P/P 20--80 SEMI Prime, 2Flats @ [111] -- Secondary 70.5° CW from Primary, Empak cst
G538 14 n--type Si:P [110] ±0.5° 4" 500 P/P 3--10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
4891 25 n--type Si:P [110] ±0.3° 4" 525 P/P 3--10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
6021 200 n--type Si:P [110] ±0.3° 4" 525 P/P 3--10 Prime, 2Flats, Empak cst
H725 13 n--type Si:P [110] ±0.3° 4" 525 P/P 3--10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
5549 25 n--type Si:P [110] ±0.5° 4" 525 P/E 3--9 SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst
6014 325 n--type Si:P [110] ±0.5° 4" 525 P/E 3--9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
J615 8 n--type Si:P [110] ±0.2° 4" 525 P/E 3--10 SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst
D898 22 n--type Si:Sb [110] ±0.5° 4" 525 P/P 0.01--0.02 {0.0176--0.0180} Prime, 2Flats @ [111] -- Secondary 70.5° CW from Primary, Empak cst
4024 21 n--type Si:As [110] ±0.5° 4" 275 P/P 0.001--0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
Secondary at 70.5°±5° CW from Primary, Empak cst
4293 25 n--type Si:As [110] ±0.5° 4" 275 ±10 P/P 0.001--0.005 SEMI Prime, 2Flats @ [111] -- Secondary 70.5° CW from Primary, Empak cst, TTV<5μm
E024 13 n--type Si:As [110] ±0.5° 4" 275 ±10 P/P 0.001--0.005 SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst
I220 44 n--type Si:As [110] ±0.5° 4" 400 E/E 0.001--0.005 SEMI, 2Flats @ [111] -- Secondary 70.5° CW from Primary, Empak cst
S5002 8 n--type Si:P [100] 4" 310 ±10 P/P 20--30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee 
5892 21 n--type Si:P [100] 4" 350 P/P 20--23 SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
G827 14 n--type Si:P [100] 4" 525 P/E 10--30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
5924 5 n--type Si:P [100] 4" 5,800 P/E 10--100 SEMI Prime, 2Flats, Individual cst
D389 5 n--type Si:P [100] 4" 5,800 P/E 10--100 SEMI Prime, 2Flats, Individual cst
5337 11 n--type Si:P [100--4° towards[111]] 4" 525 P/E 9--11 SEMI Prime, 2Flats, Empak cst
5849 23 n--type Si:P [100] 4" 525 P/E 7--11 SEMI Prime, 2Flats, Empak cst
P849 18 n--type Si:P [100] 4" 525 P/E 7--11 SEMI Prime, 2Flats, Empak cst
5171 25 n--type Si:P [100] 4" 224 P/E 5--10 SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers
D033 23 n--type Si:P [100] 4" 224 BROKEN 5--10 SEMI Test, 2Flats, Empak cst
L758 3 n--type Si:P [100] 4" 500 P/P 4--6 SEMI Prime, 2Flats, Empak cst
D830 13 n--type Si:P [100] 4" 350 ±10 P/P 3--5 SEMI Prime, 2Flats, in Empak cassettes of 5 & 8 wafers
E830 8 n--type Si:P [100] 4" 350 P/P 3--5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches
B752 38 n--type Si:P [100] 4" 450 C/C 3--5 SEMI Prime, 2Flats, Empak cst
6032 275 n--type Si:P [100] 4" 525 P/E 3--9 SEMI Prime, 2Flats, Empak cst, TTV<5μm
C925 14 n--type Si:P [100] 4" 500 ±10 P/P 2--5 SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers
D123 19 n--type Si:P [100] 4" 500 ±10 P/P 2--5 SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers
6224 275 n--type Si:P [100] 4" 525 ±10 P/P 2--6 SEMI Prime, 1Flat, Empak cst
S5920 2 n--type Si:P [100] 4" 250 ±5 P/P 1--100 SEMI Prime, TTV<3μm, Empak cst
5322 25 n--type Si:P [100] 4" 280 ±2 P/P 1--10 SEMI Prime, 1Flat, Empak cst, TTV<2μm
O173 100 n--type Si:P [100] 4" 280 P/P 1--5 SEMI Prime, 2Flats, Empak cst
5772 5 n--type Si:P [100] ±0.2° 4" 400 ±10 P/P 1--3 SEMI Prime, 1Flat, Empak cst, TTV<5μm
6001 250 n--type Si:P [100] 4" 400 ±10 P/P 1--10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
F209 7 n--type Si:P [100] 4" 400 ±5 P/P 1--10 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<20μm, Warp<20μm
J762 25 n--type Si:P [100] ±1° 4" 400 ±10 P/P 1--10 SEMI Test, 2Flats, Empak cst, TTV<5μm
5903 6 n--type Si:P [100] 4" 400 P/E 1--6 SEMI Prime, 2Flats, Empak cst
S5763 11 n--type Si:P [100] ±1° 4" 465 ±10 E/E 1--3 SEMI, 1Flat, Empak cst
6246 11 n--type Si:P [100] 4" 500 ±10 P/P 1--100 SEMI, 2Flats, Empak cst
5841 23 n--type Si:P [100] 4" 525 P/E 0.3--0.5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
6082 75 n--type Si:P [100] 4" 525 P/E 0.3--0.5 SEMI Prime, 2Flats, Empak cst
6158 200 n--type Si:P [100] 4" 525 P/E 0.3--0.5 SEMI Prime, 2Flats, Empak cst
P243 24 n--type Si:P [100] 4" 300 P/E 0.29--0.31 SEMI Prime, 2Flats, Empak cst
6134 12 n--type Si:P [100] 4" 200 P/P 0.10--0.15 SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched
E134 40 n--type Si:P [100] 4" 200 P/P 0.10--0.15 SEMI Test, 2Flats, Empak cst, Both sides with scratches
F134 25 n--type Si:P [100] 4" 200 P/E 0.10--0.15 SEMI Prime, 2Flats, Empak cst, Front--side Prime, Back--side Test grade polish
E031 25 n--type Si:Sb [100--6° towards[110]] ±0.5° 4" 525 P/E 0.015--0.020 SEMI Prime, 2Flats, Empak cst
5899 10 n--type Si:Sb [100] 4" 305 ±3 P/P 0.010--0.025 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6138 150 n--type Si:Sb [100] 4" 525 P/E 0.01--0.02 SEMI Prime, 2Flats, Empak cst
F138 75 n--type Si:Sb [100] 4" 525 P/E 0.01--0.02 SEMI Prime, 2Flats, Empak cst
U671 15 n--type Si:As [100] 4" 545 E/E 0.002--0.004 SEMI, 1Flat, Empak cst
F562 3 n--type Si:As [100] 4" 525 PlyAP/E 0.001--0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
[More Info]
5677 68 n--type Si:As [100] 4" 525 P/P 0.001--0.005 SEMI Prime, 1Flat, Empak cst
F219 1 n--type Si:As [100] 4" 525 P/E 0.001--0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
F734 275 n--type Si:As [100] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst
J220 2 n--type Si:As [100] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm
E720 44 n--type Si:As [100] 4" 550 ±10 P/P 0.001--0.005 SEMI Prime, 2Flats, Empak cst
4975 13 n--type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01--0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
F975 4 n--type Si:Sb [211] ±0.5° 4" 1,600 C/C 0.01--0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
E395 21 n--type Si:P [111] 4" 1,200 P/P 35--85 SEMI Prime, 2Flats, Empak cst
G925 4 n--type Si:P [111] ±0.5° 4" 1,500 P/E >20 {24--29} SEMI Prime, 2Flats, TTV<5μm, in Empak cassettes of 2 wafers
J329 21 n--type Si:P [111] ±0.5° 4" 250 P/E 18--25 SEMI Prime, 2Flats, Empak cst
4387 75 n--type Si:P [111] ±0.5° 4" 500 P/P 11--15 SEMI Prime, 2Flats, Empak cst, Both--sides Epi Ready polished
5259 50 n--type Si:P [111] ±0.5° 4" 525 P/E 1--5 SEMI Prime, 2Flats, Empak cst
5637 11 n--type Si:P [111] ±0.5° 4" 750 P/P 1--100 SEMI Prime, 2Flats, Empak cst, TTV<5μm
E677 10 n--type Si:P [111] ±0.5° 4" 1,000 P/E 1--10 SEMI Prime, 2Flats, in Empak cassettes of 3, 3 & 4 wafers.
F677 7 n--type Si:P [111] ±0.5° 4" 1,000 P/E 1--10 SEMI Prime, 2Flats, Empak cst
E601 5 n--type Si:P [111] ±0.5° 4" 10,000 P/E 1--100 {8.3--9.9} Prime, NO Flats, Individual cst, groups of 5 wafers
S5810 3 n--type Si:P [111] ±1.0° 4" 525 P/E 0.3--50.0 SEMI Prime, 2Flats, Empak cst
S5840 47 n--type Si:P [111] ±1.0° 4" 565 ±10 E/E 0.3--50.0 SEMI Prime, Empak cst
4420 10 n--type Si:Sb [111] 4" 525 P/E 0.016--0.020 SEMI Prime, 2Flats, Empak cst
5546 25 n--type Si:Sb [111] 4" 525 P/E 0.016--0.020 SEMI Prime, 2Flats, Empak cst
9544 125 n--type Si:Sb [111--4°] ±0.5° 4" 420 P/EOx 0.008--0.018 {0.0138--0.0151} SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal
B786 19 n--type Si:Sb [111--4.0°] ±0.5° 4" 475 ±15 P/E 0.005--0.020 {0.0113--0.0156} SEMI Prime, 2Flats, Empak cst
N758 20 n--type Si:As [111] 4" 450 P/E 0.004--0.005 SEMI Prime, 1Flat, Empak cst
5890 25 n--type Si:As [111] ±0.5° 4" 750 P/E 0.004--0.006 SEMI Prime, 2Flats, Empak cst
5740 50 n--type Si:As [111--4°] ±0.5° 4" 300 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted
5741 25 n--type Si:As [111--4°] ±0.5° 4" 325 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal
D741 14 n--type Si:As [111--4°] ±0.5° 4" 300 P/E 0.001--0.005 SEMI Prime, 2Flats, Back--side Sand--blasted with LTO seal, in Empak cassettes of 7 wafers
9239 150 n--type Si:As [111--2°] ±0.5° 4" 400 P/EOx 0.001--0.004 {0.0018--0.0036} SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst
6219 300 n--type Si:As [111--4°] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst
J656 15 n--type Si:As [111--4°] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst
3556 137 n--type Si:As [111] ±0.5° 4" 1,000 P/E 0.001--0.005 {0.0031--0.0040} SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
X7299 125 n--type Si:As [111--4°] 4" ? L/L ? SEMI TEST (in Opened Empak cst), 2Flats (2nd @ 45°)
H151 2 n--type Si:P [112] ±0.5° 4" 500 P/P 11--15 SEMI Prime, 1Flat, in Empak cassettes of 2 wafers
S5775 3 Si ? 4" ? P/P ? SEMI TEST (Unsealed), Empak cst
5784 4 Si [110] ±0.5° 4" 525 C/C ? Empak cst
5029 17 p--type Si:B [100] 4" 380 OxP/EOx 5--10 SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick
S5776 25 Si ? 4" ? P/P ? SEMI TEST (Unsealed), Empak cst
F837 21 n--type Si:P [100] 4" 500 P/P FZ 198--200 SEMI Prime, 2Flats, Empak cst
H412 15 Intrinsic Si:-- [100] 4" 650 P/P FZ >10,000 SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm
17F3 13 p--type Si:B [110] ±0.5° 4" 525 P/E 4--6 SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF, Empak cst
13S2 15 p--type Si:B [110] 4" 525 P/E 2--10 PF<111> SF 109.5°
16L 4 p--type Si:B [100] 4" 300 P/E 800--5,400 SEMI Prime, 1Flat, Empak cst
15W2 25 p--type Si:B [100] 4" 500 P/P 10--20 SEMI Prime, 2Flats, Empak cst
21F 10 p--type Si:B [100] 4" 3,000 P/E/P 10--15 SEMI Prime, 1Flat, Individual cst
16P1 7 p--type Si:B [100--6°] 4" 250 P/E 8--12 SEMI Prime, 2Flats, Empak cst
16A2 9 p--type Si:B [100--2°] 4" 300 P/E 6--7 SEMI Prime, 2Flats, Empak cst
15U2 25 p--type Si:B [100] 4" 1,000 P/E 6--7 SEMI Prime, 2Flats, Empak cst
21Q1 25 p--type Si:B [100] 4" 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst
16F 13 p--type Si:B [100--6°] 4" 525 P/E 4--6 SEMI Prime, 2Flats, Empak cst
1.60E+04 22 p--type Si:B [100] 4" 200 P/P 1--20 SEMI Prime, 1Flat, Empak cst
15V2 25 p--type Si:B [100] 4" 250 P/E 1--10 SEMI Prime, 2Flats, Empak cst
16R3 25 p--type Si:B [100] 4" 300 P/E/P 1--10 SEMI Prime, 2Flats, Empak cst
16H2 8 p--type Si:B [100--10°] 4" 300 P/E 1--10 SEMI Prime, 2Flats, Empak cst
16C1 10 p--type Si:B [100] 4" 500 P/P 1--10 SEMI Prime, 2Flats, Empak cst
16B2 13 p--type Si:B [100--6°] 4" 525 P/E 1--100 SEMI Prime, 1Flat, Empak cst
21A1 25 p--type Si:B [100] 4" 1,200 P/P 1--15 SEMI Prime, 2Flats, Empak cst
17U1 50 p--type Si:B [100] 4" 800 P/EP 0.01--0.02 SEMI Prime, 2Flats, Empak cst
20W2 27 p--type Si:B [100] 4" 3,100 P/P CZ 0.006--0.009 SEMI Prime, 2Flats, Individual cst
17V1 10 p--type Si:B [100--6°] 4" 525 P/E 0.0042--0.0047 SEMI Prime, 2Flats, Empak cst
J772 25 p--type Si:B [100] 4" 150 ±15 P/P 0.001--0.005 SEMI Prime, 2Flats, Empak cst, TTV<2μm
13R1 25 p--type Si:B [111--3°] 4" 300 P/E 3--4 SEMI Prime, 2Flats, Empak cst
13V1 15 p--type Si:B [111--4°] 4" 525 P/E 1.5--6.0 SEMI Prime, 1Flat, Empak cst
15F2 25 p--type Si:B [111--3°] 4" 400 P/E 0.015--0.018 SEMI Prime, 1Flat, Empak cst
14T1 16 p--type Si:B [111] 4" 525 P/E 0.005--0.006 SEMI Prime, 1Flat, Empak cst
15B1 20 p--type Si:B [111--1.5°] 4" 525 P/E 0.002--0.004 SEMI Prime, 1Flat, Empak cst
15D1 15 p--type Si:B [111] 4" 300 P/E 0.001--0.005 SEMI Prime, 1Flat, Empak cst
15I1 21 n--type Si:P [110] 4" 1,000 P/E 12--15 ??
16Y2 15 n--type Si:P [100] 4" 200 P/P 49--57 SEMI Prime, 2Flats, Empak cst
16Z6 25 n--type Si:P [100] 4" 400 P/E 32--70 SEMI Prime, 2Flats, Empak cst
18S1 25 n--type Si:P [100] 4" 400 P/P 17--19 Prime, NO Flats, Empak cst
16V4 25 n--type Si:P [100] 4" 700 P/E 14--18 Prime, NO Flats, Empak cst
18U2 25 n--type Si:P [100] 4" 250 P/E 11--13 SEMI Prime, 2Flats, Empak cst
18V1 20 n--type Si:P [100] 4" 400 P/P 10--18 SEMI Prime, 2Flats, Empak cst
16T1 50 n--type Si:P [100] 4" 525 P/E 5--10 SEMI Prime, 1Flat, Empak cst
16X3 24 n--type Si:P [100] 4" 259 P/P 3--5 SEMI Prime, 2Flats, Empak cst
18Q1 11 n--type Si:P [100--4°] 4" 525 P/E/P 1--10 SEMI Prime, 2Flats, Empak cst
16U2 14 n--type Si:P [100--2°] 4" 525 P/E >1 SEMI Prime, 2Flats, Empak cst
17C2 6 n--type Si:P [100] 4" 1,000 P/P 1--20 SEMI Prime, 2Flats, Empak cst
21S3 7 n--type Si:P [100] 4" 2,500 P/P 1--100 SEMI Prime, 2Flats, Individual cst
18L1 4 n--type Si:Sb [100] 4" 450 P/E ~0.03 SEMI Prime, 1Flat, Empak cst
18H1 6 n--type Si:Sb [100] 4" 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
18K1 18 n--type Si:Sb [100] 4" 600 P/E 0.01--0.03 Strange Flats
21V 8 n--type Si:Sb [100--4°] 4" 1,500 P/E/P 0.005--0.030 SEMI Prime, 2Flats, Empak cst
20X1 17 n--type Si:Sb [100] 4" 1,500 P/E/P 0.001--0.030 SEMI Prime, 2Flats, Empak cst
22K1 15 n--type Si:P [111] 4" 1,500 P/E >20 SEMI Prime, 2Flats, Empak cst
13U1 75 n--type Si:P [111] 4" 250 P/E 18--25 SEMI Prime, 2Flats, Empak cst
14C1 75 n--type Si:P [111] 4" 250 P/E 18--25 SEMI Prime, 2Flats, Empak cst
13W3 12 n--type Si:P [111] 4" 280 P/E 2--5 SEMI Prime, 2Flats, Empak cst
22J1 6 n--type Si:P [111] 4" 2,500 P/P 2.0--2.5 SEMI Prime, 2Flats, Individual cst
14A1 200 n--type Si:P [111] 4" 280 P/E 1--2 SEMI Prime, 2Flats, Empak cst
13M1 12 n--type Si:P [111--4°] 4" 525 P/E 1--15 SEMI Prime, 1Flat, Empak cst
13P3 6 n--type Si:P [111--1.5°] 4" 525 P/E 1--2 SEMI Prime, 2Flats, Empak cst
13J4 50 n--type Si:P [111] 4" 1,000 P/E 1--10 SEMI Prime, 2Flats, Empak cst
13Q4 3 n--type Si:P [111] 4" 1,000 P/E 1--10 SEMI Prime, 2Flats, Empak cst
14M1 75 n--type Si:Sb [111--4°] 4" 450 P/E 0.025--0.045 SEMI Prime, 2Flats, Empak cst
14W1 10 n--type Si:Sb [111--2.5°] 4" 625 P/E 0.021--0.023 SEMI Prime, 2Flats, Empak cst
1.40E+02 25 n--type Si:Sb [111] 4" 525 P/E 0.016--0.020 SEMI Prime, 2Flats, Empak cst
14G1 125 n--type Si:Sb [111--4°] 4" 525 P/E 0.010--0.020 SEMI Prime, 2Flats, Empak cst
14I2 25 n--type Si:Sb [111--2°] 4" 380 P/E 0.008--0.018 SEMI Prime, 1Flat, Empak cst
14F2 600 n--type Si:Sb [111--3°] 4" 400 P/E 0.008--0.018 SEMI Prime, 1Flat, Empak cst
15A1 50 n--type Si:Sb [111--3°] 4" 400 P/E 0.005--0.018 SEMI Prime, 2Flats, Empak cst
15G2 25 n--type Si:As [111] 4" 450 P/E 0.004--0.005 SEMI Prime, 1Flat, Empak cst
14N1 50 n--type Si:As [111--3°] 4" 400 P/E 0.001--0.005 SEMI Prime, 1Flat, Empak cst
14D4 50 n--type Si:As [111--4°] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst
14K1 10 n--type Si:As [111--4°] 4" 525 P/E 0.001--0.005 SEMI Prime, 1Flat, Empak cst
14P1 25 n--type Si:As [111--2.5°] 4" 525 P/E 0.001--0.005 SEMI Prime, 1Flat, Empak cst
14R1 25 n--type Si:As [111--3°] 4" 525 P/E 0.001--0.005 SEMI Prime, 2Flats, Empak cst
17H1 3 Intrinsic Si:-- [100] 4" 525 P/E 400--1,000 SEMI Prime, 1Flat, Empak cst