Heterojunction Bipolar Transistor

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Gallium Arsenide for Heterojunction Bipolar Transistors

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Item   Qty.   Description
FM91b. 1   Substrate: GaAs 3”Ø 
                    Epi layer 1: 500 nm AlGaAs sacrificial layer 
                    Epi layer 2: 10 nm undoped, lattice matched InGaP 
                    Epi layer 3a: 60 nm lattice matched InGaAsP barrier 
                    Epi layer 3b: 5 nm compressively strained InGaP QW with PL around 670 nm 
                    Epi layer 3c: 10 nm lattice matched InGaAsP barrier 
                    Epi layer 3d: 5 nm compressively strained InGaP QW with PL around 670 nm 
                    Epi layer 3e: 10 nm lattice matched InGaAsP barrier 
                    Epi layer 3f: 5 nm compressively strained InGaP QW with PL around 670 nm 
                    Epi layer 3g: 60 nm lattice matched InGaAsP barrier 
                    Epi layer 4: 10 nm undoped, lattice matched InGaP 
                    Epi layer 5: 100 nm AlGaAs cap