SIMOX Silicon on Insulator (SOI) Wafers Thin Device Layer

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SIMOX SOI Wafers

SIMOX represents a significant breakthrough in thermal expansion. SIMOX stands for Single- Molecule Oxygen Complex and is made from pure silicon on insulator. The silicon on insulator forms a semi-solid layer upon which a powder of tungsten carbide is bonded. SIMOX has unique abilities to expand to very large dimensions, up to ten times its initial volume. This property makes SIMOX very useful for use in applications requiring high temperature expansion.

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Why use SIMOX Silicon-on-Insulator (SOI) Substrates?

SOI wafers that implants the buried, or oxide layer is referred to as Separation by Implantation Of Oxygen (SIMOX).today an Unlike bonded SOI which requires are usually have a silicon device layer of 1 micron minimum, SIMOX SOI implants the oxygen directly into a silicon wafer. This allows silicon device layers that are only a few nanometers thick.

Thin device layers of 220nm, for example improve the performance of sensors and silicon actuators. Thus high temperature SOI sensors (up to 300 °C) with low noise and high dynamic range provide an affordable priced substrate that can help researchers with device minturization, and smart sensors using conventional semiconductor tools.

Piezoresistive pressure sensors benefit from Simox SOI. These products in the following areas:

  • Biomedical applications
  • Automotive industry
  • Household appliances
  • Military Technology

For piezoresistive detection, the silicon top layer (0.2 μm thick) is used as an active material with the excellent properties of the single-crystalline silicon.

The following Separation by Implantation Of Oxygen (SIMOX) SOI spec is often used:

Simox SOI Item #3381 - 150mm P/B <100> 10-20 ohm-cm 675um SSP Prime - Buy as few as one wafer

Diced pieces of the wafer above are also available for a deep discount.

 

 

SIMOX Silicon-on-Insulator-Inventory

Below are just some fo the thin device layer SOI that we sell online.

If you don't see a spec that you can use, please fill out the form for an immediate quote.

Item

Dia

Typ/Dop

Ori

Res ohm-cm

Handle

Device nm

Oxide μm (or nm)

2327 25mm sq P/B (100) 14-22 625 500 3
2377 150mm P/B (100) 14-22 675 100 200nm
2415 150mm P/B (100) 13.5-22.5 625 500 3
2265 200mm P/B (100) 9-16 725 145 135
2266 200mm P/B (100) 9-16 725 190 150
2551 200mm P/B (100) 1-20 725 70 2,000nm
2268 300mm P/B (100) 9-16 775 50 145

What is SIMOX Silicon-on-Insulator (SOI)

SIMOX is ideal for use in the surgical industry in that it offers a safe, non-invasive way of implanting micro implants directly into the body. Micro implantation is an essential part of the minimally invasive procedure, and it is performed through a specially adapted injection gun. One of the benefits of the SIMOX process smart cut is that it allows for the use of soiled dressings to be inserted into the implants, as opposed to traditional dressings used prior to the procedure. This is made possible through the use of soi wafers, which have been designed to insert into the silicon based micro implant. Once the wafer is adhered to the silicon layer within the implant, the dressings are removed and the micro implant is then inserted into the body.

In addition to the use of soi wafers for inserting and removal of the dressings, SIMOX uses a novel silicon on insulator technique. This technique is not commonly used in other applications, but is especially useful for use in the manufacturing industry. The silicon on insulator technique is like a molecular model of the human skin in that it mimics the natural insulating layer found on the surface of the skin. Because of this, the surface tension of the silicon based material is less than that of natural silicon, which reduces the resistance of the material and allows for it to be placed more easily and with greater precision. As a result, it allows for greater precision and control when working with materials, such as solid polymers and polyurethane. It also allows for the incorporation of micro-fabricated parts into otherwise difficult to work with components.

SIMOX's goal is to create a fully-functional miniature electronic device out of a semi-conductor material such as silicon, tantalum and gallium arsenide. The device would contain a high-level source of power (lowered via a microchip), and would contain multiple conductors in the form of diodes or semiconductors. The device could be programmed to perform a variety of different functions, depending on the type of micro circuitry that was used to design the device in the first place.

The wafer bonding process that makes SIMOX unique is accomplished by using an innovative technique called wafer bonding. The procedure involves placing the wafer material directly onto the surface of the silicon semiconductor layer, which then allows for the electronic layer to be bonded directly to the wafer. This is a unique way to layer the wafers without using the traditional oxide layer which can be bonded using several oxides. Instead, this is a method where only the topmost layer of wafers is used in order to provide the very highest level of uniformity. In fact, because there is no oxide layer involved, the wafer bonding process allows for greater purity and stability compared to other similar processes.

The wafer bonding process also involves a second Si layer which is used to create a barrier between the silicon and the gate. This creates a second barrier of insulator which allows for the gate to be open at all times. One benefit of the silicon-on-insulator layer is that the gate can be opened more quickly compared to other methods of opening it. In addition, the insulator layer provides an additional level of durability to the device, as it can provide sufficient energy to the silicon during charging and discharging. Another advantage of the silicon-on-insulator layer is that it allows for a transfer of energy across the device from the source silicon to the device, while still protecting the device from over current or power surges.

The SIMOX substrate has a very high level of selectivity, as it only allows the transfer of certain energy states. For instance, the silicon-on-insulator and the oxide layer thickness can determine whether or not the device can accept or release electrons. In fact, the oxide layer thickness can determine how stable the device is, as it is the thickness of the oxide film that determines how quickly charge and discharge currents are present. However, the substrate can also affect the device's stability, as the amount of charge carriers present can affect the device's behavior when placed in a magnetic field.

The final step in the fabrication process is the soiling or scuffing of the silicon wafer. During this step, the surface of the silicon wafer is coated with small amounts of metallic substances such as copper, cobalt, or tin. These metallic substances are used to create a physical barrier, which prevents the electrical current from flowing between the silicon and the electrode. However, the conductivity of the silicon can be increased by the addition of the sulfur compound, which increases the number of conductive sites.