Thermal Oxide Growth Calculator

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University Silicon Wafer for Production

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Oxide Growth Visualizer

Please provide oxidation data
Starting Thickness:
Ǻ
Final Thickness:
Ǻ
Temperature:
°C (700 to 1200)
Oxidation Time:
hh:mm:ss
Crystal Orientation:
Environment:

Physical Constants

Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific heat (J/g°C)
1.0
Film stress (at 25°C) dynes/cm2
2-4 x 109
IR absorption peak (mm)
9.3
Etch rate BHF (49%) nm/min
100

Result