We have total thickness variation silicon wafer surface flatness as tight as 1 micron. The flatter the surface of the wafer the higher the yield during the photolithography process. A wafer's flatness is the linear thickness variation across the wafer.
Total Thickness Variation (TTV) is tThe variation of the total thickness is an important measurement that is carried out on the primary wafer during the final inspection. As shown, this is done with the above-mentioned ADE system, which can be done in different ways, as in the case of the above measurement.
The TTV represents the minimum and maximum thickness measured on the wafer, as seen on the wedge. The art of wafer polishing progresses naturally, and the better and better the TTV is reported, the greater the variation in total thickness. For example, 15 umm would be a good measure of the thickness of a 1 / 4 mm (0.5 mm) TTV, but this would only be seen from a different angle, for example from the left or right side.
Site TIR (Total Indicator of Reading) for the first time in the history of the Office of Science and Technology of the US Department of Energy.
There are a few ways to do this measurement, but the only one that silicon people will admit is that there are no "flatness parameters" or even a site-to-site ratio. I'm not sure what to do. # I have already discussed global flatness, because I believe that the parameter alone, the "location Tir," is almost worthless. There are many other parameters such as temperature, pressure and temperature fluctuations.
The Total Thickness Variation (TTV) is an important measurement that represents the maximum variation in a wafer's thickness, generally calculated by measuring the thickness in five locations. This value is used to determine surface quality parameters for a thinned wafer, which in turn will affect the packaging process and the final quality of the chip. As a rule of thumb, the smaller the TTV, the better the quality of the chip.
Total thickness variation is typically measured in microns. The range is usually between 0.1 and 6.5 microns. It is important to note that there is a range of variation that applies to various substrates. It is important to check for this variation when designing optical components. For example, if the thickness variation is one micron, the material may be warped or bowing.
Substrates with a Total Thickness Variation (TTV) of <1μm.
Below are just some of the ultra-flat silicon that we have in stock.
Item |
Typ/Dolp |
Orient. |
Diam(mm) |
Thck(μm) |
Pol. |
Res Ωcm |
Comment |
6971 | N/Ph | [100-25° towards[110]] ±1° | 6" | 675 | P/P | 1-100 | SEMI notch Prime, Empak cst, TTV<1μm |
S5594 | P/B | [100] | 5" | 990 ±8 | P/P | 1-25 | SEMI Prime, Empak cst, TTV<1μm |
S5597 | N/Sb | [100] ±1° | 5" | 1,200 ±10 | P/E | 0.001-0.025 | SEMI Prime, SEMI notch, TTV<1μm Empak cst |
F709 | N/Ph | [100] | 5" | 762 ±12 | P/P | 5-35 | SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm |
S6284 | N/Ph | [100] ±1° | 4" | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<1μm, in Empak cst |
C310 | Intrinsic | [100] | 4" | 510 ±5 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
F103 | Intrinsic | [100] | 4" | 525 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst, |
G706 | Intrinsic | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
6356 | Intrinsic | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
J302 | P/B | [100] | 4" | 600 | P/P | 1-50 | SEMI Prime, 1Flat, TTV<μm, Empak cst |
C796 | P/B | [100] | 4" | 525 | P/P | 1-30 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
6570 | N/Ph | [100] | 4" | 400 | P/P | 1-10 | SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst |
4975 | N/Sb | [211] ±0.5° | 4" | 1,500 ±15 | P/P | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
L302 | P/B | [100] | 4" | 625 | P/P | 1-50 | SEMI Prime, 1Flat,TTV<1μm, Empak cst |
J066 | N/Ph | [100] | 4" | 500 | P/P | 1-100 | SEMI Prime, 2Flats, TTV<1μm, With Lasermark, Empak cst |
4154 | P/B | [110] ±0.5° | 3" | 360 | P/P | 1-10 | SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish |
6710 | P/B | [100] | 3" | 375 | P/P | 1-20 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
6826 | P/B | [100] | 3" | 475 | P/P | 1-50 | SEMI Prime, 2Flats, Empak cst, TTV<0.3μm |
D750 | P/B | [100] | 3" | 420 | P/P | <1 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
S5580 | N/Ph | [100] ±1° | 3" | 2,286 ±13 | P/P | 15-28 | SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers |
S5824 | N/Ph | [100] ±1° | 3" | 300 ±10 | P/P | 5-15 | SEMI Prime, TTV<1μm, Empak cst |
6400 | N/Ph | [100] | 3" | 350 | P/P | 1-25 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |
6818 | N/Ph | [100] | 3" | 381 | P/P | 1-30 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
H988 | P/B | [100] | 3" | 580 | P/P | 1-100 | SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst |
H714 | N/Ph | [100] | 3" | 350 | P/P | 1-25 | SEMI Prime, 1Flat, TTV<1μm, Empak cst |