1 Micron Total Thickness Variation (TTV) Silicon Wafers

university wafer substrates

Total Thickness Variation (TTV)

We have total thickness variation silicon wafer surface flatness as tight as 1 micron. The flatter the surface of the wafer the higher the yield during the photolithography process. A wafer's flatness is the linear thickness variation across the wafer.

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What is Total Thickness Variation (TTV)

Total Thickness Variation (TTV) is tThe variation of the total thickness is an important measurement that is carried out on the primary wafer during the final inspection. As shown, this is done with the above-mentioned ADE system, which can be done in different ways, as in the case of the above measurement.

The TTV represents the minimum and maximum thickness measured on the wafer, as seen on the wedge. The art of wafer polishing progresses naturally, and the better and better the TTV is reported, the greater the variation in total thickness. For example, 15 umm would be a good measure of the thickness of a 1 / 4 mm (0.5 mm) TTV, but this would only be seen from a different angle, for example from the left or right side.

Total Indicator Reading (TIR)

Site TIR (Total Indicator of Reading) for the first time in the history of the Office of Science and Technology of the US Department of Energy.

There are a few ways to do this measurement, but the only one that silicon people will admit is that there are no "flatness parameters" or even a site-to-site ratio. I'm not sure what to do. # I have already discussed global flatness, because I believe that the parameter alone, the "location Tir," is almost worthless. There are many other parameters such as temperature, pressure and temperature fluctuations.

Bow and Warp

First, I want to discuss Bow, a wafer that is in the unstressed state (Chuck) of a measuring system. Bow Warp is the final inspection to determine the quality of the wafers. The easiest way to imagine a "wafer" is to imagine the shell being turned upside down and turned to its side by turning it upside down. This would be 30% and how the deformations on the middle surface of each wafer behave concave or convex in the centre, regardless of the thickness variation.

This measurement is also done in an unloaded state, so I will talk about the warp thread next and talk to the wafer and its measuring system (Chuck).

Simply put, the simplest way to look at warp deformation is to look at the wafer as a potato chip. A good warp count on an 8 'wafer would be 20%, but there is a hiccup. Delay is the difference between the number of warp points on the warp and the time between them.


Ultra-Flat Silicon Wafers In Stock

Substrates with a Total Thickness Variation (TTV) of <1μm.

Below are just some of the ultra-flat silicon that we have in stock.

Item Qty in Material Orient. Diam Thck Surf. Resistivity Comment
Stock Dopant (mm) (μm) Ωcm
6971 5 n-type Si:P [100-25° towards[110]] ±1° 6" 675 P/P 1-100 SEMI notch Prime, Empak cst, TTV<1μm
S5594 2 P/B [100] 5" 990 ±8 P/P 1--25 SEMI Prime, Empak cst, TTV<1μm
S5597 23 n-type Si:Sb [100] ±1° 5" 1,200 ±10 P/E 0.001-0.025 SEMI Prime, SEMI notch, TTV<1μm Empak cst
F709 18 n-type Si:P [100] 5" 762 ±12 P/P 5--35 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<5μm, Warp<10μm
S6284 1 n-type Si:P [100] ±1° 4" 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
C310 5 Intrinsic Si:- [100] 4" 510 ±5 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
F103 10 Intrinsic Si:- [100] 4" 525 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst,
G706 7 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6356 10 Intrinsic Si:- [100] 4" 500 P/P FZ >20,000 SEMI Prime, 1Flat, TTV<1μm, Empak cst
J302 5 P/B [100] 4" 600 P/P 1--50 SEMI Prime, 1Flat, TTV<μm, Empak cst
C796 6 P/B [100] 4" 525 P/P 1--30 SEMI Prime, 1Flat, Empak cst, TTV<1μm
6570 25 n-type Si:P [100] 4" 400 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, With lasermark, Empak cst
4975 13 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P 0.01-0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
L302 13 P/B [100] 4" 625 P/P 1--50 SEMI Prime, 1Flat,TTV<1μm, Empak cst
J066 10 n-type Si:P [100] 4" 500 P/P 1-100 SEMI Prime, 2Flats, TTV<1μm, With Lasermark, Empak cst
4154 7 P/B [110] ±0.5° 3" 360 P/P 1--10 SEMI Prime, 2Flats, TTV<1μm, 1-2 weeks ARO o repolish
6710 5 P/B [100] 3" 375 P/P 1--20 SEMI Prime, 2Flats, Empak cst, TTV<1μm
6826 7 P/B [100] 3" 475 P/P 1--50 SEMI Prime, 2Flats, Empak cst, TTV<0.3μm
D750 14 P/B [100] 3" 420 P/P <1 SEMI Prime, 2Flats, Empak cst, TTV<1μm
S5580 5 n-type Si:P [100] ±1° 3" 2,286 ±13 P/P 15-28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
S5824 23 n-type Si:P [100] ±1° 3" 300 ±10 P/P 5--15 SEMI Prime, TTV<1μm, Empak cst
6400 4 n-type Si:P [100] 3" 350 P/P 1--25 SEMI Prime, 1Flat, TTV<1μm, Empak cst
6818 5 n-type Si:P [100] 3" 381 P/P 1--30 SEMI Prime, 2Flats, Empak cst, TTV<1μm
H988 20 P/B [100] 3" 580 P/P 1-100 SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst
H714 10 n-type Si:P [100] 3" 350 P/P 1--25 SEMI Prime, 1Flat, TTV<1μm, Empak cst