What is a Micropipe?

university wafer substrates

What is a Micropipe Density?

A micropipe is a sustrate surfce flaw that can be found in all substrates. Micropes flaws are hexagonal in shape. This cavity starts on the surface and burrows into the wafer like a pothole. The surface damage caused by micropipes can short circuit an electronic device and or chip causing the device to fail.

Thus, low micropipe denisity results in higher device/chip yields.

Get Your Quote FAST!

Silicon Carbide Micropipe Defect Denisity

Both 4h and 6h Silicon Carbide (SiC) substrates used when power semiconductors are needed can suffer from micropipe defect density. The greater the defect, the greater the negative affect on the wafer's performace caused by the defect breakdown the voltage, changing thermal conductivity of solid state electronic circuits.


What Is A Micropipe?

One of the most common defects found in the growth of semiconducting materials is a dislocation of the open core coil, known as a micropipe. The defect has the right aspect ratio and the process error is processed, but it has the right aspect ratio. A microtube, also known as a microfluidic defect, micrometer or micrometer or size defect (M - M), is a crystallographic defect in a single crystal or substrate. [Sources: 3, 5]

If the defect site is substantially extensive and has a mine signature of 1116, a defect processing algorithm (240) determines whether it is of an appropriate size of 1201. If it has large areas on a scatter or mirror defect card, it determines that the defect site has the largest area on the scatter pattern, including the tail, at 1124. The defect is identified as a micropipeline by a scattering pattern of the microfluidic defect (1126) and a tail of scattering patterns (1114), then 1302 was found to be an "appropriate size" of 1301, and 1311 was found to be "substantially comprehensive" and suitable for size 1202. [Sources: 5]

The defect processing algorithm (240) is stored in memory (220) and driven by a microprocessor (222). The preferred embodiment of the present invention comprises an analysis system (200) comprising a microtube which detects the microfluidic defect site (1126), the scatter or mirror defect card and a tail of scatter patterns (1114). [Sources: 5]

In the most typical system (12), System 12 comprises two layers of CVD and PECVD layers, each of which has different deposition properties when current passes through the coil. By forming a trench (10) with a large aspect ratio (H / W) and a CVC layer (11) with a layer P ECVD (13), the desired uniform hole in the microtubes is formed so that the CVA layer has the appropriate deposition characteristics and the trench [10] has greater aspect ratios [H and W]. [Sources: 0, 4]

Such needle holes are called microprobes and can cause problems in the manufacture of semiconductor devices. In at least one embodiment, the [sic] seed crystal is introduced into the microtubes, with axial and lateral crystal growth being promoted by the presence of a needle hole in the CVC layer [13, 14, 15]. If the temperature gradient becomes too large, the growth of the crystal causes a strain that leads to contortions and other defects. In particular, unintentional contaminants (seeds or growth fronts) can begin to develop into micro-opipes or micro-pipes that can multiply in a boules. [Sources: 2, 8, 11]

A non-contact reaction occurs when one of the micropipes emits a complete nuclear dislocation, which is accepted by all micropipes. In this case, a microtopipe forms, which leads to dislocation in one or more microtropipes [14, 15, 16]. [Sources: 9, 10]

Both micropipes and microfluidic reagent cards are configured to have a small diameter, which significantly reduces the liquid of liquid gels, as the liquid interface cannot flow even when arranged horizontally. In this way, however, it is only possible to reduce the density of the micro-tubes to 10 cm - 2, which is unsatisfactory because it leads to the destruction of components. [Sources: 1, 7]

In addition, the sublimation recrystallization method has the disadvantage that the needle holes, which have a diameter of several micrometers and lead through the growth direction of the crystal, remain at about 100 - 1,000 cm2 when the crystals grow, while in the liquid phase of the epitaxy the density of the micropipes is considerably reduced or eliminated (5,679,153). With the sublimatation system above or an equivalent, certain embodiments of this invention offer the possibility of growing a single crystal (sic) that is completely free of micropy defects. This article presents a method for the application of a small diameter (10 cm - 2) microfluidic reagent card to an [SiC] epitaxial layer and the ability to significantly reduce or eliminate the densities of an amicrotube by liquid - phase epit Galaxy - esque encapsulation by using an extremely cost-effective, high density and highly efficient microfluidics system. We have set out to develop and apply such a system in a wide range of applications, but not limited to it, such as biodegradable materials, biofuels, pharmaceuticals, biocompatible materials and biotechnology. [Sources: 2, 4, 8, 11]

Examples of described methods are mechanical polishing, which is carried out with an insulating part (40%) in solution, which is removed and removed with a higher removal rate. Examples of this are wet cross etching, in which a mechanical polishing with an abrasive grain is used, and embedding and removing the insulating element [40] with a higher etching rate (5,679,153). [Sources: 6]

This allows the production of a semiconductor wafer containing the large-volume single crystal substrate (sic), which has a microper-tube density of zero and an insulating element of less than 0.5% of its surface area. [Sources: 2]

The powder source (20%) is most often a seed crystal with minimal defects, which is used to produce the single crystal Silicon Carbide (SiC) substrate in the ongoing heat treatment. When using the 6H type, it is grown on a single crystal substrate and converted into a microper tube substrate when used as a 0.5 micron wafer. In addition, it can be grown using a 3 / 4 nanometer (1.2 mm) or 2 / 3 millimeter (2.1 mm) in the form of single crystals that are converted into a bead during heat treatment and grown with seed crystals with or without minimal defect. [Sources: 4, 8, 11]




[0]: https://www.google.mk/patents/US6031286

[1]: https://patentswarm.com/patents/US20190283018A1

[2]: https://patents.google.com/patent/US8410488B2/en

[4]: https://www.google.com.na/patents/WO2006041660A2

[5]: https://patents.justia.com/patent/7592616

[6]: https://www.google.ht/patents/US9318871

[7]: http://www.freepatentsonline.com/y2006/0267024.html

[8]: http://www.google.si/patents/US6508880

[9]: https://www.azom.com/article.aspx?ArticleID=5954

[10]: https://en.wikipedia.org/wiki/Micropipe

[11]: https://www.google.com/patents/US6217842