Indium Antimonide (InSb) Undoped, Tellerium, Germanium Doped

university wafer substrates

Indium Antimonide Substrates Epi-Ready

Indium Antimonide (InSb) Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

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Indium Antimonide Substrates Research

A, a leading manufacturer of indium antimony compounds, today announced that it has developed a new class of high-performance, low-cost, and ultra-thin-film substrates. The invention concerns the development of a substrate containing both indium antimony (IndiA) and antimony (Antimium) in a single atom. [Sources: 1, 7]

IndiA can be heated to temperatures of up to 1,000 degrees Celsius (3,500 degrees Fahrenheit) before evaporating, and at temperatures as high as 0.5 degrees. [Sources: 2]

The resulting indium antimonid film is transferred into a completely protective atmosphere to undergo a high temperature transfer from the surface of the film into the atmosphere and back again. On the other hand, it is very difficult to control the antimony concentration in the material and its absorption by the air. The needle - like precipitation - is distributed over the indumin and distributed as shown in FIG. Excess indium diffuses and thus an indium oxide layer is formed, which is then distributed by the IndiA film. [Sources: 4]

To understand the complex Moire patterns that appear in the TEM images, we used a combination of a calculated dislocation field and simulated diffraction contrast (Fig. 1) to construct a 3D model of a single indium antimony film with a surface of 1.5 m. To understand these complex "moire" patterns that appear on the tempos image, I used the calculated dislocation field (FIG. 2) and the simulated diffraction contrast (Fig. 3) to construct a 2D image of an IndiA film and a 1D map of its structure. To understand this complex 'Moires' pattern, which appears on a T EM-image (FIG.2), I use the calculation of calculated disorientation fields (Fig.3) together with the simulated diffraction contrast. [Sources: 0]

To build the XOI platform, Javey and his colleagues built a preliminary swelling substrate and then lithographically sampled the film with an ordered series of nanobands. [Sources: 5]

Two vapors, a vacuum and an evaporator, released steam onto the substrate during rotation, and two vapor vents released steam from the evaporators onto the substrates as they spun. [Sources: 4]

Compared to pure TiO2, indium-doped boron (tio-2-aB) and tIO- 2- aIn (aA) were dosed with visible UV light and showed a significant reduction in the valence bands of both substrates. Compared to pureTiO 2, interstitial - doped B-ions hybridised in a lattice of O2P were more sensitive to the mixing valence bands formed by their hybridisation with the substrate and less sensitive to those formed from mixed valence bands by the sub-B-ion hybridisation within the lattices of T2A and T3A. In contrast, the number of Ti O 2 (sub-1, aO- sub, 2.0), Indian-dosed borson was more resistant to mixed valence band formation due to its hybridizations with Ti 2P and Ti2B and to a high degree of resistance to visible UV light from the vapour vents and evaporators. [Sources: 3]

This small QD consists of pure indium antimonids, which means that it contains no arsenic inclusions and small amounts of arsenic. This smallest QD consists of Pure indium antimones: A comparison of the properties of small qD and pure TiO 2, with and without arsenic and with a small amount of boron and tIO-2- aIn (aA). This smaller Qd consists of pure IndiaAntimones: a comparison between the properties of the smaller Qd and the purer TiO2, but with small doses of tio- 2-aB and Ti2B. This means that this small quantity has arsenic binding and a smaller quantity with or without arsenic and contains small amounts of borson. [Sources: 0]

Indium antimonids have been described by Kruse, McGlaughlin and McQnistan as semiconductor compounds produced by melting ice and stoichiometric amounts of indium and antimony. The composition of the resulting indium antimonid film is a mixture of boron and tIO-2-aIn (aIn) and a small amount of tio- 2- aB and Ti2B. A single crystal wafer, ground to a thickness of 50 Mu, is etched to give the desired pattern. Mu is obtained by controlling temperature, pressure and pressure, as well as the thickness and number of atoms in the film. [Sources: 4, 6]

The silicon in the single crystal wafer is treated with oxidative diffusion and forms a layer of silicon oxide. The indium antimonid film is then partially oxidized and crystallized again during heat treatment. During the vapor deposition process, a layer for the indium antimonides film grows on the substrate. [Sources: 4]

In contrast to conventional protective layers, such indium oxide layers have a high compatibility with the film from the Eindiumantimonide and do not decay, as shown in FIG. Therefore, it is unsatisfactory to prevent the reevaporation of antimony by applying an oxide layer to the surface of the indiamine film, but still not having the magnetic resistance of this element, which is generated by the indium antimony films. By contrast, if the indium anti-antimony oxide layer is built directly on silicon in a single crystal, it has been found to flake off during the subsequent phases of heat treatment and it has also been observed that the heat treatments associated with recrystallization are poor. Adhesion can be improved by applying a layer of India Antimonid film to a resulting substrate and then subjecting it to heat treatment. [Sources: 4]












What are Indium Antimonide Wafers Used For?

Scientists have used the following InSB wafer specfication to research highly-responsive Infrared (IR) photodetector sensors.

InSb Item #7400
2" Undoped [100] 500um SSP

indium antimonide infrared ir photodetector sensors

InSb IR Sensor

InSb Electronic And Crystallographic Specifications

Indium Antimonide Bandgap Detector

Raytheon's AIM-9X missile, incorporates an Indium Antimonide (InSb) bandgap detector array

InSb - Indium Antimonide Inventory

Undoped Indium Antimonide Wafers

Item #N797 - 2" Undoped (100) 500um SSP

N-type Tellerium (Te) Doped Indium Antimonide Wafers

Item #5138 - 2" N/Te [111A] ±0.5° 525um DSP

If you cannot use the following specs, please let us know which specs we can quote for you!


Item Material Orient. Diam
Surf. Resistivity
N797 undoped InSb:- [100] 2" 500 P/E n-type <2E14 @77ºK >40,000 @77ºK <300 EJ Flats; Epi Ready
5138 n-type InSb:Te [111A] ±0.5° 2" 525 P/P 0.0230-0.0313 (3-8)E14 400,000-450,000 <50 1 Flat; Epi Ready

Indium Antimonide Substrates for THz Modulators

Scientists have used the following InSb wafers for their THz modulator research. Click here for Gallium Antimonide (GaSb) and Indium Phosphide (InP) wafer options.

Item Material Orient. Diam. Thck(μm) Pol ResΩcm Nca/cm3 Mobilcm2/Vs EPD/cm2 Comment
7400 undoped InSb:- [100] 2" 500 P/E n-type <2E14     US Flats; Epi Ready