R-plane sapphire can be used in a variety of applications, including growing Silicon on Sapphire (SOS). R-plane SoS chips work great radiation hardware, from integrated circuits to photovoltaics.
Contact us for a fast quote!
R-plane sapphire has a small, energetically unrelaxed geometry over all four surface facets. A comparison of sapphire c and m planes in the spheres shows that there is no significant difference in the energy distribution between the two planes on the surface layer. There are no differences in surface energy between the c - r plane and the o-final layer of a GaN template.
This sapphire substrate is excellent for semiconductor growth. Its high-purity asymmetry makes the material an excellent substrate for a heteroepitaxial silicon growth. Its asymmetric nature has been a key advantage of a-plane sapphire. The asymmetric nature of sapphire is advantageous for the fabrication of a-plane semiconductor devices. Its high-purity nature can be beneficial for many RF amplifiers.
An asymmetric sapphire is a material with an asymmetric property. Its low optical index makes it an ideal substrate for a-plane GaN LEDs. Its asymmetric property is a commutative asymmetry. An asymmetric sapphire is an example of a semiconductor with a high c-plane. This property is a characteristic that allows amorphous silicon to grow on a flat surface.
Similarly, the sapphire substrates are excellent for heteroepitaxial silicon growth. Asymmetry is a common feature of silicon, making a c-plane sapphire a preferred substrate for heteroepitaxial silicon. Asymmetry is a problem in a material that can be solved through simulation. For example, asymmetry in R-plane sapphire is a major disadvantage for the crystalline sapphire.
An asymmetric sapphire can be useful for the manufacturing of amorphous silicon. The asymmetric sapphire is useful for a variety of applications, from a simple amorphous semiconductor to a high-end RF amplifier. The asymmetric nature of sapphire is also advantageous for heteroepitaxial silicon growth. But asymmetry in R-plane sapphire does not mean that asymmetry can be resolved through simulation.
Despite its asymmetric nature, R-plane sapphire is a good substrate for heteroepitaxial silicon growth. Its low optical index is a major advantage for a-plane LEDs. The a-flat structure is advantageous for RF amplifiers. The a-flat sapphire is the ideal substrate for a-plane silicon. The lower optical index can increase the performance of a-plane semiconductor.
Scientists have used the following r-plane sapphire to deposit Niobium (Nb) metal onto the surface
Sapphire 10x10mm R-plane+/-0.3 430~500+/-25 SSP
Sapphire 2 inch R-plane+/-0.3 430+/-25 SSP
Reference #264147 for pricing.
An R-plane sapphire is a high-temperature superconductor with non-polar nature. This material is highly suitable for various optical applications. Its non-polar nature also influences its processing efficiency and yield. In some cases, it is easier to polish an ingot made from an R-plane sapphire compared to one made from a c-plane sapphire.
It is the best candidate for a-plane GaN LEDs because of its low optical index. The a-flat structure is anisotropic, meaning that the crystals are asymmetric. In this case, sapphire is an excellent choice because it can support heteroepitaxial silicon growth. However, the disadvantages of an R-plane sapphire are its low-purity. For this reason, sapphire is a better substrate for RF amplifiers than the R-plane version.
R-plane sapphire wafers are great for hetero-epitaxial deposition of silicon to fabricate microelectronic Integrated Circuits (ICs) devices.
We have a large selection of r-plane sapphire wafers. See below for a small sample.
Please send us the specs you would like us to quote.
R-plane Sapphire Substrate Inventory List
|Item No.||Size(inch)||Surface Orientation(°)||Thickness(um)||Surface||Quantity(pcs)||Remarks/Status||Wafer Grade|
|9||4''||R-plane+/-0.5||475+/-25||SSP||7||Double Flat Cut,SEMI STD||Prime,Epi-ready|
1. Other un-regular specifications available do by custom.
2. Prime,Epi-ready wafers are available to ship in short time.
3. All above listed wafers follows the Semi standard.
High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by a combination of pulsed laser deposition (PLD) and metalaorganic chemical vapor deposition (MOCVD). The films exhibit a single emission, which is 1.7 nm wide at 300 K. These films are suitable for various applications, including optical components, displays, and solar cells.
The epitaxial relationship between r-plane sapphire and ZnTe is studied in detail. A thin film of ZnTe grown on the m-plane of a sapphire substrate is tilted towards the r-plane when oriented in the m-axis direction. The orientation of the thin films is governed by the c-plane of the substrate, thereby providing the desired orientation for the epilayer.
The epitaxial relationship between R-plane sapphire and ZnTe is investigated. The two materials are closely related, and asymmetry can be easily resolved by a computer simulation. In the present study, an epitaxial relationship between (111)-plane sapphire and Zn-Te was detected in a c-plane-sapphire sample. The c-plane is the preferred substrate for heteroepitaxial silicon growth.
R-plane sapphire is used for growing heteroepitaxial silicon on the surface of sapphire substrates. The non-polar nature of the R-plane influences the physical, thermal, and electrical properties of the material, as well as its processing efficiency. This in turn affects yield. However, in some cases, processing the A-direction of a sapphire ingot is also feasible. The process of polishing a sapphire ingot on a c-plane substrate is more convenient for this application.
Semipolar InN is grown on an r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. This epitaxial relationship is (1101) InN Parallel-To-Al2O3 and (102) InPlane Sapphire. The epitaxial relationship between these two materials is defined by the influence of S-plane. This research could benefit from further development of a sapphire-based nanostructure.
The R-plane sapphire is a useful substrate for Silicon on Sapphire. Its geometry is unrelaxed and small, which makes it an excellent substrate for heteroepitaxial silicon. The material's low resistivity is critical in microelectromechanical devices. Besides, it offers higher performance, lower parasitic capacitance, and reduced oxidation and sulphide. This is ideal for a wide range of applications, but it does not have high purity.
Various researches have shown that sapphire can be used for LEDs that are nonpolar in orientation. It is a popular substrate for high-quality semiconductors. It also enhances the clarity and color of light-emitting devices. A-plane sapphire is an excellent substrate for LEDs, and it has an excellent refractive index. Several researches on a-plane sapphire have shown that the crystal is highly transparent.
In addition to optical properties, R-plane sapphire has a unique epitaxial relationship with ZnTe. The c-plane r-plane is the substrate for the (111)-plane ZnTe epilayer. Its in-plane orientation has important applications for semiconductor manufacturing. The two materials can be used for a variety of purposes. A new technique has been developed to grow Silicon on R-plane Sapphire.
The R-plane sapphire substrates are ideal for a-plane GaN LEDs. A-plane sapphire has a very high optical index, making it a suitable material for LEDs. Its low index, however, makes it impossible to use this material for the LED applications. For the a-plane sapphire, the anisotropic property of the material affects the a-flat structure's symmetry.
A-Plane Sapphire is the best choice for a wide range of optical applications. Its combination of high IR and optical properties makes it the ideal window material for many IR applications. Unlike sapphire, R-Plane Sapphire has higher MRR than other sapphires. It also has a smaller Sa than other two types, making it more suitable for a FIB milling process.
The lower dielectric constant of sapphire allows the growth of III-Vs and GaAs on r-plane sapphire. This can be used for the integration of RF electronics and lasers. The high quality of the growth of these semiconductors on r-plane sapphirite is also advantageous for the optical applications. A-plane sapphire is a great choice for a high-end RF-Amplifier application.
TDs are generated on flat sapphire regions between the patterns. They have a periodic pitch of 5300 m/s, which makes them ideal for SAW applications. A-GaN epi-layers grown on r-plane sapphire can be applied in a variety of different applications, such as optical filters. The TDs are important for a wide-band SAW device, as they are a great source of energy.