Targeted Stress LPCVD Nitride

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University Silicon Wafer for Production

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Targeted Stress LPCVD Nitride SPECIFICATIONS

  • Thickness range: 50Å – 4µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: both
  • Refractive index: 2.05 – 2.35
  • Film stress: Your target +/-50MPa Tensile Stress
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 800C° – 820C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace

 

Targeted Stress LPCVD Nitride

Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.

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