Low Stress Nitride on Silicon Wafers

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Low Stress Nitride Silicon Wafers

Why use low stress nitride on your silicon wafers? Some uses include surface micromachining process that can fabricate the micromechanical structures when internal tensile stress and native nonporous morphology is required.

SPECIFICATIONS

  • Thickness range: 50Å – 2µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: both
  • Refractive index: 2.20 +/-.02
  • Film stress: <250MPa Tensile Stress
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 820C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace