Thermal Oxide (SiO2) Silicon Wafers

The Purpose of Growing Thermal Oxide Onto Silicon

• Gate oxide
• Masking material during doping
• To provide protection for the conductors
• To Isolate devices from each other
• A dielectric for a capacitor

How is Thermal Oxide Applied to Silicon Wafers?

• Grown Dry Oxidation - By default dry oxide is grown on just one side of the wafer. Perect for very thin oxide layers
• Wet Oxidation Grown - Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.
• Deposited CVD - When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.

What are the Factors Effecting Oxide Growth?

• Using dry oxidation (Oxygen gas) or wet oxidation steam
• Pressure
• Temperature
• Lattice Orientation (oxide grows faster on (111) oriented wafers then (100) oriented silicon wafers.
• Click here for our thermal oxdie growth calculator.

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• Wet Oxidation
• Dry Oxidation
• Chemical Vapor Deposition (CVD ) Oxide

Other specs thermal oxide thickness available. Please ask!

50.8mm P/B (100)1-10 ohm-cm 280um SSP $7.90 each
With 300nm of Oxide $16.90 each
with 100nm of LPCVD Nitride $31.90 each

100mm N/Ph (100) 1-10 ohm-cm 500um SSP $12.90 each
with 300nm of oxide $20.90 each
with 100nm of LPCVD Nitride $36.90 each

100mm N/As (100) 0.001-0.005 ohm-cm 500um SSP $14.90 each
with 300nm of oxide $22.90 each
with 100nm of LPCVD Nitride $38.90 each

100mm P/B (100) 1-10 ohm-cm 500um SSP $12.50 each
with 300nm of oxide $20.50 each
with 100nm of LPCVD Nitride $36.90 each

100mm P/B (100) 0.001-0.005 ohm-cm 500um SSP $13.90 each
with 300nm of oxide $21.90 each
with 100nm of LPCVD Nitride $37.90 each

100mm P/B (100) 1-20 ohm-cm 1,00um SSP $15.90 each
with 300nm of oxide $23.90 each
with 100nm of LPCVD Nitride $39.90 each

100mm P/B (100) 0.01-0.02 ohm-cm 525um SSP $13.90 each
with 300nm of oxide $21.90 each
with 100nm of LPCVD Nitride $39.90 each

THERMAL OXIDE SPECIFICATIONS

 

Thickness range: 500Å – 15µm
Thickness tolerance: Target +/-5%
Within wafer uniformity: +/-3% or better
Wafer to wafer uniformity: >+/-5% or better
Sides processed: Both
Refractive index: 1.456
Film stress: -320MPa (Compressive)
Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
Wafer thickness: 100µm – 2,000µm
Wafer material: Silicon, Silicon on Insulator, Quartz
Temperature: 950C° – 1050C°
Gases: Steam
Equipment: Horizontal Furnace

 

Wet Oxide on Silicon

Our Ultra-Pure Wet Thermal Oxidation process is designed to insure that you receive the highest quality films. Prior to thermal oxidation
all wafers will receive a pre-furnace clean.

 

Dry Oxide on Silicon

 

Our ultra-pure Dry Oxidation process is available for those applications requireing thinner oxides, and is designed to ensure that you
receive the highest quality film.

 

Dry Chlorinated Thermal Oxidation

Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using
Dry Cholorinated Thermal Oxide can help your devices to perform to its highest potential by eliminating metal ions.

 

Thermal Oxide Calculator