Gallium Phosphide (GaP) III-V Semiconductor Wafers

university wafer substrates

Gallium Phosphide Optical Clarity

The most significant property of gallium phosphide that distinguishes it from other materials is its great optical clarity. When viewed through a scope, its wavy thickness shows bright bands in the spectrum. As seen from the figure above, the internal lines of single crystals are easily seen. In addition, the brilliance of the bands is enhanced if the device is viewed through an ultraviolet (UV) light source. Hence, this compound presents great advantages when used for solar cells and energy conversion.

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Gallium Phosphide (GaP) for Terahertz (THz) Radiation Generation

A researcher asked:

We are looking for a GaP <110>  sample for THz generation. The ideal thickness is 0.5mm or 1mm.

The wafer should be polished on both sides and, it possible, AR-coated at 1030nm.

Solution:

GaP 25mm x 25mm Undoped (110)+/-0.5 deg 1,000 micron Double Side Polished Epi Ready

Other diameters available. Researcher was looking for least expenseive.

UniversityWafer’s Gallium Phosphide Substrates Helps Develop Patterned Surfaces at Nanometer Scale

UniversityWafer provided researchers from Lawrence Berkeley National Laboratory with single crystalline (100) GaP wafers. These wafers were p-type doped with zinc. Their resistivity was 0.3 Ω cm with an Single Side Polished (SSP) epi-ready finish. This process was used to establish a new way to absorb light and produce clean, environmentally friendly energy.

What are the Benefits of Using Gallium Phosphide (GaP) Wafers?

Gallium phosphide (GaP) is a non-toxic and transparent semiconductor that is used in many telecommunications devices. It is said to have one of the best all-over performance. Gallium Phosphide is manufactured through a process called ionic diffusion. The material exhibits an extended band of hardness (between 0.73 and 0.75 micrometer) and superior electrical characteristic. One of its most important physical characteristics is its high correlation to gallium nitride, which is widely used in photovoltaic and optoelectronic applications.

gallium phosphide (gap) bandgap benefits

The ganthanic compound has the look of tiny black dots. The crystals have a bluish color, which can be attributed to high solvation of the gallium indium phosphide in the silicon substrate. Undoped single crystal devices also exhibit clear red wafers, while highly doped single crystal devices seem black, because of free-Carrier absorption.

Gallium phosphide (GaP) exhibits some unique physical properties that make it ideal for use in photovoltaic systems, electronics, and energy transfer. It has high solubility, which makes it soluble in water. Solubility gives it the ability to diffuse into other liquids with low-molecular weight. This property makes it possible to build wafers from small solids such as silica and quartz. In addition, Undoped Silicon Wafers (Si) is insoluble in water and separates readily between Si and water. Single-crystal devices based on gallium phosphide (Ig) are capable of producing electrical power, whereas bulk Icos based on Pd are unable to do so.

Gallium phosphide can be formed in various ways. It can be formed from gallium nitrate (CHN) or gallium phosphate (DIP), which is the common semiconductor wafer substrate used in industries. Gallium phosphate is inexpensive and commonly found in many industries. However, its thermal stability is poor. Moreover, its high vapor transmission rate reduces its cost.

In contrast, gallium phosphide is a semiconductor compound that is formed directly from Gallium Nitride (GaN). Its optical clarity is superior to that of the former. Hence, it exhibits superior performance in applications requiring short-wave transmission and energy conversion. Moreover, gallium phosphide exhibits good electrical and optical properties, which are unique in the context of semiconductor materials. It is also used in medical devices because of its anti-toxicity property.

Silicon carbide is a white crystalline powder and was initially developed as an alternative to gallium phosphide due to its high purity. Silicon carbide has low density, which makes it a suitable material for dosing equipment. Silicon carbide can be used as a substitute for Pd as it yields higher purity. The electrical and optical properties of silicon carbide make it a good semiconductor compound for optoelectronic applications.

Tungsten trioxide is a popular choice for coloring semiconductors due to its colorless, smooth, and highly conductive property. However, tungsten trioxide's high melting point makes it a poor choice for use in electronics as it can easily get bubbled. A novel method called dopant dissolution is gaining popularity for preparing semiconductor materials such as gallium phosphide using common dietary products. Dopant dissolution uses a solution of potassium in a doped mixture of tungsten trioxide crystals.

Gallium phosphide, Silicon Carbide (SiC), Indium Phosphide (InP) wafer thicknesses, and doping equipment are important components in desktop testing systems. These testing supplies help in quality assurance, yield testing, and stability testing of semiconducting systems. Moreover, these testing supply products have low cost of manufacturing, easy handling, flexibility, safety, durability, and value for money. Overall, the benefits of using gallium phosphide, silicon carbide, indium phosphide wafer thicknesses, and doping equipments are considerable.

What Are Gallium Phosphide Wafers Used For?

Gallium phosphide wafers are widely used in semiconductor devices. The material's transparent nature makes it an ideal choice for the fabrication of LEDs and other high-efficiency devices. However, this material is not free from defects. As a result, it is often used in LEDs at relatively low costs. Nevertheless, its optical properties are also limited, which makes it less suitable for high-end applications.

Gallium phosphide wafers are made using a single-crystal GaP. These are grown using a LEC method, using 6N high-purity materials. This semiconductor material is widely used in displays and red LEDs. Because of its excellent quality and high-performance properties, this material is commonly used in display elements and LCD backlights.

Gallium phosphide is a compound semiconductor with a broad indirect band gap. Its crystal structure is similar to silicon and the lattice constant is 0.545 nm. It has high solubility, allowing electrons to diffuse into low-molecular-weight liquids, and is insoluble in water. Due to its favorable properties, gallium phosphide is widely used in optical systems.

UniversityWafers provides single-crystal GaP gallium phosphide wafer, grown using a six-nanometer process. This material is very well-made and is used as a yellow and red LED. In addition, it is also widely used in LCD display elements and the backlight of LCDs. Its good quality makes it a great choice for display elements.

Gallium phosphide is a polycrystalline compound semiconductor that has a wide range of applications. It is a white-gray material that has a small indirect band gap of 2.26 eV. Unlike silicon, gallium phosphide has a high refractive index. It is a good choice for display elements and LCD backlights.

Gallium phosphide is a nonlinear compound semiconductor with a broad range of applications. Its indirect bandgap is 2.26 eV, making it one of the most accessible semiconductor materials. The material is transparent to visible light and long-infrared radiation. Its high-resolution transparency makes it an ideal choice for medical devices. If you're looking for a semiconductor, this is an excellent choice for your project.

Gallium phosphide is a compound semiconductor. Its indirect band gap is 2.26 eV (300K). Its n-type and p-type semiconductors are characterized by a narrower band gap. Consequently, these two materials are very useful in a wide variety of applications. Its p-type counterparts have an increased ability to absorb ultraviolet light.

Gallium Phosphide Light Emitting Diodes

In addition to being useful for LEDs, gallium phosphide wafer is also a popular material for solar cells. These devices are used in LED manufacturing and are widely available in the market. This material is available in several different types, and its benefits include the ability to produce clean energy. The compound semiconductors can be fabricated with ease. If you're interested in making your own LEDs, gallium phosphides are a good choice.

The use of gallium phosphide wafer is widespread. It can be used as an LED, which is a popular type of LED. Its high optical property allows it to be used in a number of different electronic devices. The high optical quality of these components means they're highly versatile. If you're looking for a semiconductor that can perform in many applications, gallium phosphide is an excellent choice.

As a result, gallium phosphide wafer is an important component of many desktop testing systems. Its n-type and p-type semiconductors are used for laser diodes and other devices. The material's low density makes it suitable for dosing equipment. Its high optical and electrical properties make it a perfect choice for optoelectronic applications.

Gallium Phosphide Semiconductor

Gallium phosphide is an extremely versatile semiconductor. It is an excellent choice for use in solar cells and in solar panels. Its high optical properties make it an ideal material for many applications. The material's low resistance and high electrical conductivity makes it the perfect semiconductor for electronic and photovoltaic devices. A wide variety of products can be manufactured with gallium phosphide wafer.

We have a large selection of Gallium Phoshide Wafers in Stock. Below are some of the specs

Great for low cost light emitting diodes (LEDs) gallium phosphide (gap) wafers

Item Qty Type/Dop Ori Dia
(mm)
Thck
(μm)
Pol Res Ωcm Nc
a/cm3
Mobil
cm2/Vs
EPD
/cm2

Undoped Gallium Phosphide

5229 10

undoped

[100] 2" 350 P/P n-type 0.104 <4E16 >141 <1E5
EJ Flats; Epi Ready
G543 1 undoped [110] ±0.5° 5×6mm 400 P/P n-type >0.9 <5E16 140 <4.7E4
Ohmic Contacts on the 0.4x6mm edges
4898 2 undoped [111B] ±0.5° 2" 400 P/E n-type 240 1.6E14 160 <5E4
EJ Flats, Epi Ready

N-Type Gallium Phosphide: Sulfer Doped

5161 2

n-type : Sulfer Doped

[100-10° towards[110]] ±1° 2" 302 P/E 0.115 4.75E17 115 <8E4
EJ Flats; Epi Ready
4348 1 n-type: S [100-6° towards[111]] ±1° 2" 400 P/E 0.058 9.9E17 107 <5.3E4
SEMI Flats; Epi Ready
5170 1 n-type:S [111A] ±0.5° 2" 350 P/E 0.043 1.8E18 81 <1E5
SEMI Flats; Epi Ready

P-type Gallium Phosphide : Zinc (Zn)

5034 1

p-type(Zn)

[100] 2" 400 P/E 0.164 5.5E17 69 <5.3E4
SEMI Flats; Epi Ready, Wafers have small edge chips near PF
4324 1 p-type:Zn [111B] ±0.5° 2" 350 P/E 0.34 2.4E17 75 <5E4
SEMI Flats (PF@[110], SF@[112]), Epi Ready, Wafer unsealed

Cadmium-Doped Gallium Phosphide 

99B 15 p-type:Cd [100] 2" 400 C/C 2.2 2.5E16 120 <8E4
P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafer
99A 1 p-type:Cd [100] 2" 400 P/E 2.0 2.5E16 120 <8E4
SEMI Flats; Epi Ready, doped with Cadium; More such wafers can be made

Chromium Doped Gallium Phosphide

178 7 SI :Cr [100] 2" 400 P/E 2E10 4.1E6 75 <5E4
US Flats; Black spots on surface
219A 1 undoped [100] 3" 400 P/P n-type 0.21-0.29 (1.5-2.3)E17 128-140 <2E5
SEMI Flats; Chips at edge
261 4 undoped [100] 2" 450 P/E n-type >34 <1.21E15 60-140 <5E4
SEMI Flats; Bubbles near edge
358A 10 undoped [100] 2" 400 P/E n-type >1E12 <1E4 <50  
Semi-Insulating, Compensated material
347A 1 undoped [100] 2" 300 P/P n-type 1.4E8 2.9E8 150 <5E4
EJ Flats; Edge Chips at Secondary Flat
287A 13 undoped [100] 2" 450 C/C n-type 1E7 4E9 161 <5.3E4
P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers
112 1 undoped [100] 2" 600 P/P n-type 2.15 1.6E16 170 <6.2E4
Epi Ready; Back-side has micro-scratches
249 2 undoped [100] 2" 1,000 P/P n-type 0.24 2E17 130 <8E4
EJ Flats, Epi Ready
249B 1 undoped [100] 2" 5,000 C/C n-type 0.17-0.24 (2-3.2)E17 119-130 <8E4
Unpolished
170A 1 undoped [110] ±0.5° 2" 250 P/E n-type 0.94-320.00 (3.7-560)E14 134-164  
Epi Ready
337 8 undoped [111B] ±0.5° 2" 400 P/E n-type >240 <1.6E14 150-160 <8E4
111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
166 9 undoped [111B] ±0.5° 2" 400 C/C n-type >0.35 <1E17 >140 <5E4
111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
166A 4 undoped [111B] ±0.5° 2" 400 P/E n-type >0.35 <1E17 >140 <5E4
EJ Flats; Epi Ready
337B 1 undoped [111B] ±0.5° 2" 400 P/E n-type 160 1.6E14 160 <5E4
EJ Flats, TEST grade - 6mm scratch 5mm from edge
252A 1 undoped [111B] 2" 400 P/E n-type 86 4E14 180 <6E4
EJ Flats, Minor defects on the edge
349 9 undoped [111B] ±0.5° 2" 400 C/C n-type 2.3-3.2 (1.2-1.6)E16 165 <5E4
111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
88C 1 n-type:S [100-2° towards[111]] ±0.5° 2" 400 P/E 0.20 2.9E17 110 <2E5
SEMI Flats; TEST grade - 0.3mm chip on edge
88D 1 n-type:S [100-2° towards[111]] ±0.5° 2" 400 P/E 0.20 2.9E17 110 <2E5
SEMI Flats; Epi Ready, with edge chip ~0.3mm
296 3 n-type:S [100-10° towards[110]] ±1° 2" 302 ±20 P/E 0.115 4.75E17 115 <8E4
EJ Flats; Epi Ready
280 2 n-type :S [100-10° towards[110]] ±1° 2" 302 ±20 P/E 0.11 4.79E17 112 <5.5E4
EJ Flats; Epi Ready
268 2 n-type:S [100-10° towards[110]] ±1° 2" 302 P/E 0.11 5.3E17 105 <8.9E4
EJ Flats; Epi Ready
304 3 n-type GaP:S [100] 2" 350 P/E 0.065 8.9E17 107 <6E4
US Flats; Epi Ready
304B 1 n-type:S [100] 2" 350 P/E 0.065 8.9E17 107 <6E4
US Flats, Epi Ready, Scratch on back-side
304D 11 n-type:S [100] 2" 680 C/C 0.064 9.1E17 106 <6E4
SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers
304C 2 n-type:S [100] 2" 400 P/P 0.064 9.1E17 108 <6E4
US Flats; Epi Ready
78B 1 n-type GaP:S [100-6° towards[111]] ±1° 2" 400 P/E 0.058 9.9E17 107 <5.3E4
SEMI Flats; Epi Ready
244 3 n-type:S [100-10° towards[011]] ±1° 2" 350 ±10 P/E 0.051 1.4E18 88 <6.6E4
SEMI Flats; Epi Ready
129A 3 n-type:S [100] 2" 400 P/E 0.0364 1.91E18 90 <7E4
US Flats; Epi Ready
276 5 n-type:S [100-6° towards[111B]] ±1° 2" 400 P/E 0.0375 2.3E18 72 <5.8E4
EJ Flats; Epi Ready
010C 2 n-type:S [111B-6° towards[1,1,2]] ±1° 2" 400 P/E 0.140 4.1E17 107 <6E4
SEMI Flats; Epi Ready
009 3 n-type:S [111B] ±0.5° 2" 275 P/E 0.136 4.37E17 105 <5E4
NO Flats; Epi Ready
010A 2 n-type:S [111A-6° towards[112]] ±1° 2" 400 P/E 0.125 4.5E17 110 <6E4
EJ Flats (PF@[1,-1,0], SF@[-1,-1,2]), Epi Ready
012A 1 n-type:S [111B] ±0.5° 2" 400 P/E 0.10 5.9E17 104 <7.8E4
EJ Flats (PF@[-1,1,0], SF@[1,1,-2]), Epi Ready
012B 1 n-type:S [111B] ±0.5° 2" 400 P/E 0.075 8.6E17 96 <7.8E4
EJ Flats (PF@[-1,1,0], SF@[1,1,-2]); Epi Ready
148C 1 n-type:S [111A] ±0.5° 2" 350 P/E 0.043 1.6E18 90 <1.3E5
SEMI Flats; Epi Ready
148D 1 n-type:S [111A] ±0.5° 2" 350 P/E 0.043 1.8E18 81 <1E5
SEMI Flats; Epi Ready
148E 1 n-type:S [111A] ±0.5° 2" 350 P/E 0.042 (1.8-2)E18 76 <2E5
US Flats; Epi Ready
148F 1 n-type:S [111B] ±0.5° 2" 350 P/E 0.042 (1.8-2)E18 76 <2E5
SEMI Flats; TEST grade, not fully polished
148A 1 n-type:S [111A] ±0.5° 2" 350 P/E 0.042 2E18 76 <2E5
148B 1 n-type:S [111B] 2" 400 P/P 0.041 2E18 72 <2E5
EJ Flats; TEST grade - Small scratch
242A 6 n-type:S [311] ±0.5° 2" 540 P/E 0.06 1E18 100 <5E4
Epi Ready
284C 5 p-type:Zn [100-6° towards[111A]] ±1° 2" 400 P/E 0.44 2.2E17 64 <5.7E4
SEMI Flats; Epi Ready
284B 2 p-type:Zn [100-2° towards[110]] ±0.5° 2" 400 P/E 0.43 2.4E17 61 <4.7E4
SEMI Flats; Epi Ready
285C 1 p-type GaP:Zn [100] 2" 1,000 P/E 0.088 1.3E18 56 <4E4
344A 1 p-type:Zn [100] 2" 350 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4
SEMI Flats; Epi Ready
344B 1 p-type:Zn [100] 2" 350 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4
SEMI Flats; Epi Ready, Back-side poorly lapped
344C 2 p-type:Zn [100] 2" 400 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4
SEMI Flats; TEST grade - Back-side scratched
344D 4 p-type:Zn [100] 2" 400 P/E 0.045-0.053 (1.8-2.3)E18 58-64 <5E4
SEMI Flats; Epi Ready
328 3 p-type:Zn [100-6° towards[111B]] ±1° 2" 400 P/E 0.047 2.2E18 60 <5.3E4
SEMI Flats; Epi Ready
319 2 p-type:Zn [111B] ±0.5° 2" 450 P/E 0.069-0.074 (1.3-1.4)E18 65-66 <5E4
SEMI Flats; Epi Ready
319B 4 p-type :Zn [111B] ±0.5° 2" 400 P/P 0.069-0.074 (1.3-1.4)E18 65-66 <5E4
SEMI Flats; Epi Ready
246 1 p-type:Zn [311] ±1° 2" 350 ±10 P/E 0.11 8.7E17 68 <2.5E4
SEMI Flats (PF@[110], SF 90° CCW from PF), Epi Ready
243A 10 p-type:Zn [311] ±0.5° 2" 350 P/E 0.085 1.15E18 64 <2.2E4
SEMI Flats; Epi Ready