Gallium Phosphide (GaP) III-V Semiconductor Wafers
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Gallium Phosphide for Terahertz (THz) Radiation Generation
A researcher asked:
We are looking for a GaP <110> sample for THz generation. The ideal thickness is 0.5mm or 1mm.
The wafer should be polished on both sides and, it possible, AR-coated at 1030nm.
Solution:
GaP 25mm x 25mm Undoped (110)+/-0.5 deg 1,000 micron Double Side Polished Epi Ready
Other diameters available. Researcher was looking for least expenseive.
UniversityWafer’s Gallium Phosphide Substrates Helps Develop Patterned Surfaces at Nanometer Scale
UniversityWafer provided researchers from Lawrence Berkeley National Laboratory with single crystalline (100) GaP wafers. These wafers were p-type doped with zinc. Their resistivity was 0.3 Ω cm with an SSP epi-ready finish. This process was used to establish a new way to absorb light and produce clean, environmentally friendly energy.
We have a large selection of Gallium Phoshide Wafers in Stock. Below are some of the specs
Great for low cost light emitting diodes (LEDs) 
| Item | Qty | Type/Dopant | Ori | Dia (mm) |
Thck (μm) |
Pol | Res Ωcm | Nc a/cm3 |
Mobil cm2/Vs |
EPD /cm2 |
Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
Undoped Gallium Phosphide |
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| 5229 | 10 | undoped |
[100] | 2" | 350 | P/P | n-type 0.104 | <4E16 | >141 | <1E5 | EJ Flats; Epi Ready |
| G543 | 1 | undoped GaP:- | [110] ±0.5° | 5×6mm | 400 | P/P | n-type >0.9 | <5E16 | 140 | <4.7E4 | Ohmic Contacts on the 0.4x6mm edges |
| 4898 | 2 | undoped GaP:- | [111B] ±0.5° | 2" | 400 | P/E | n-type 240 | 1.6E14 | 160 | <5E4 | EJ Flats, Epi Ready |
N-Type Gallium Phosphide: Sulfer Doped |
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| 5161 | 2 | n-type GaP: Sulfer Doped |
[100-10° towards[110]] ±1° | 2" | 302 | P/E | 0.115 | 4.75E17 | 115 | <8E4 | EJ Flats; Epi Ready |
| 4348 | 1 | n-type GaP:S | [100-6° towards[111]] ±1° | 2" | 400 | P/E | 0.058 | 9.9E17 | 107 | <5.3E4 | SEMI Flats; Epi Ready |
| 5170 | 1 | n-type GaP:S | [111A] ±0.5° | 2" | 350 | P/E | 0.043 | 1.8E18 | 81 | <1E5 | SEMI Flats; Epi Ready |
P-type Gallium Phosphide : Zinc (Zn) |
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| 5034 | 1 | p-type GaP: |
[100] | 2" | 400 | P/E | 0.164 | 5.5E17 | 69 | <5.3E4 | SEMI Flats; Epi Ready, Wafers have small edge chips near PF |
| 4324 | 1 | p-type GaP:Zn | [111B] ±0.5° | 2" | 350 | P/E | 0.34 | 2.4E17 | 75 | <5E4 | SEMI Flats (PF@[110], SF@[112]), Epi Ready, Wafer unsealed |
Cadmium-Doped Gallium Phosphide |
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| 99B | 15 | p-type GaP:Cd | [100] | 2" | 400 | C/C | 2.2 | 2.5E16 | 120 | <8E4 | P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers |
| 99A | 1 | p-type GaP:Cd | [100] | 2" | 400 | P/E | 2.0 | 2.5E16 | 120 | <8E4 | SEMI Flats; Epi Ready, doped with Cadium; More such wafers can be made |
Chromium Doped Gallium Phosphide |
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| 178 | 7 | SI GaP:Cr | [100] | 2" | 400 | P/E | 2E10 | 4.1E6 | 75 | <5E4 | US Flats; Black spots on surface |
| 219A | 1 | undoped GaP:- | [100] | 3" | 400 | P/P | n-type 0.21-0.29 | (1.5-2.3)E17 | 128-140 | <2E5 | SEMI Flats; Chips at edge |
| 261 | 4 | undoped GaP:- | [100] | 2" | 450 | P/E | n-type >34 | <1.21E15 | 60-140 | <5E4 | SEMI Flats; Bubbles near edge |
| 358A | 10 | undoped GaP:- | [100] | 2" | 400 | P/E | n-type >1E12 | <1E4 | <50 | Semi-Insulating, Compensated material | |
| 347A | 1 | undoped GaP:- | [100] | 2" | 300 | P/P | n-type 1.4E8 | 2.9E8 | 150 | <5E4 | EJ Flats; Edge Chips at Secondary Flat |
| 287A | 13 | undoped GaP:- | [100] | 2" | 450 | C/C | n-type 1E7 | 4E9 | 161 | <5.3E4 | P/E or P/P, SEMI/EJ Flats, to be polished, MOQ=5 wafers |
| 112 | 1 | undoped GaP:- | [100] | 2" | 600 | P/P | n-type 2.15 | 1.6E16 | 170 | <6.2E4 | Epi Ready; Back-side has micro-scratches |
| 249 | 2 | undoped GaP:- | [100] | 2" | 1,000 | P/P | n-type 0.24 | 2E17 | 130 | <8E4 | EJ Flats, Epi Ready |
| 249B | 1 | undoped GaP:- | [100] | 2" | 5,000 | C/C | n-type 0.17-0.24 | (2-3.2)E17 | 119-130 | <8E4 | Unpolished |
| 170A | 1 | undoped GaP:- | [110] ±0.5° | 2" | 250 | P/E | n-type 0.94-320.00 | (3.7-560)E14 | 134-164 | Epi Ready | |
| 337 | 8 | undoped GaP:- | [111B] ±0.5° | 2" | 400 | P/E | n-type >240 | <1.6E14 | 150-160 | <8E4 | 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers |
| 166 | 9 | undoped GaP:- | [111B] ±0.5° | 2" | 400 | C/C | n-type >0.35 | <1E17 | >140 | <5E4 | 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers |
| 166A | 4 | undoped GaP:- | [111B] ±0.5° | 2" | 400 | P/E | n-type >0.35 | <1E17 | >140 | <5E4 | EJ Flats; Epi Ready |
| 337B | 1 | undoped GaP:- | [111B] ±0.5° | 2" | 400 | P/E | n-type 160 | 1.6E14 | 160 | <5E4 | EJ Flats, TEST grade - 6mm scratch 5mm from edge |
| 252A | 1 | undoped GaP:- | [111B] | 2" | 400 | P/E | n-type 86 | 4E14 | 180 | <6E4 | EJ Flats, Minor defects on the edge |
| 349 | 9 | undoped GaP:- | [111B] ±0.5° | 2" | 400 | C/C | n-type 2.3-3.2 | (1.2-1.6)E16 | 165 | <5E4 | 111A/111B, SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers |
| 88C | 1 | n-type GaP:S | [100-2° towards[111]] ±0.5° | 2" | 400 | P/E | 0.20 | 2.9E17 | 110 | <2E5 | SEMI Flats; TEST grade - 0.3mm chip on edge |
| 88D | 1 | n-type GaP:S | [100-2° towards[111]] ±0.5° | 2" | 400 | P/E | 0.20 | 2.9E17 | 110 | <2E5 | SEMI Flats; Epi Ready, with edge chip ~0.3mm |
| 296 | 3 | n-type GaP:S | [100-10° towards[110]] ±1° | 2" | 302 ±20 | P/E | 0.115 | 4.75E17 | 115 | <8E4 | EJ Flats; Epi Ready |
| 280 | 2 | n-type GaP:S | [100-10° towards[110]] ±1° | 2" | 302 ±20 | P/E | 0.11 | 4.79E17 | 112 | <5.5E4 | EJ Flats; Epi Ready |
| 268 | 2 | n-type GaP:S | [100-10° towards[110]] ±1° | 2" | 302 | P/E | 0.11 | 5.3E17 | 105 | <8.9E4 | EJ Flats; Epi Ready |
| 304 | 3 | n-type GaP:S | [100] | 2" | 350 | P/E | 0.065 | 8.9E17 | 107 | <6E4 | US Flats; Epi Ready |
| 304B | 1 | n-type GaP:S | [100] | 2" | 350 | P/E | 0.065 | 8.9E17 | 107 | <6E4 | US Flats, Epi Ready, Scratch on back-side |
| 304D | 11 | n-type GaP:S | [100] | 2" | 680 | C/C | 0.064 | 9.1E17 | 106 | <6E4 | SEMI/EJ Flats, P/E or P/P, to be polished, MOQ=5 wafers |
| 304C | 2 | n-type GaP:S | [100] | 2" | 400 | P/P | 0.064 | 9.1E17 | 108 | <6E4 | US Flats; Epi Ready |
| 78B | 1 | n-type GaP:S | [100-6° towards[111]] ±1° | 2" | 400 | P/E | 0.058 | 9.9E17 | 107 | <5.3E4 | SEMI Flats; Epi Ready |
| 244 | 3 | n-type GaP:S | [100-10° towards[011]] ±1° | 2" | 350 ±10 | P/E | 0.051 | 1.4E18 | 88 | <6.6E4 | SEMI Flats; Epi Ready |
| 129A | 3 | n-type GaP:S | [100] | 2" | 400 | P/E | 0.0364 | 1.91E18 | 90 | <7E4 | US Flats; Epi Ready |
| 276 | 5 | n-type GaP:S | [100-6° towards[111B]] ±1° | 2" | 400 | P/E | 0.0375 | 2.3E18 | 72 | <5.8E4 | EJ Flats; Epi Ready |
| 010C | 2 | n-type GaP:S | [111B-6° towards[1,1,2]] ±1° | 2" | 400 | P/E | 0.140 | 4.1E17 | 107 | <6E4 | SEMI Flats; Epi Ready |
| 009 | 3 | n-type GaP:S | [111B] ±0.5° | 2" | 275 | P/E | 0.136 | 4.37E17 | 105 | <5E4 | NO Flats; Epi Ready |
| 010A | 2 | n-type GaP:S | [111A-6° towards[112]] ±1° | 2" | 400 | P/E | 0.125 | 4.5E17 | 110 | <6E4 | EJ Flats (PF@[1,-1,0], SF@[-1,-1,2]), Epi Ready |
| 012A | 1 | n-type GaP:S | [111B] ±0.5° | 2" | 400 | P/E | 0.10 | 5.9E17 | 104 | <7.8E4 | EJ Flats (PF@[-1,1,0], SF@[1,1,-2]), Epi Ready |
| 012B | 1 | n-type GaP:S | [111B] ±0.5° | 2" | 400 | P/E | 0.075 | 8.6E17 | 96 | <7.8E4 | EJ Flats (PF@[-1,1,0], SF@[1,1,-2]); Epi Ready |
| 148C | 1 | n-type GaP:S | [111A] ±0.5° | 2" | 350 | P/E | 0.043 | 1.6E18 | 90 | <1.3E5 | SEMI Flats; Epi Ready |
| 148D | 1 | n-type GaP:S | [111A] ±0.5° | 2" | 350 | P/E | 0.043 | 1.8E18 | 81 | <1E5 | SEMI Flats; Epi Ready |
| 148E | 1 | n-type GaP:S | [111A] ±0.5° | 2" | 350 | P/E | 0.042 | (1.8-2)E18 | 76 | <2E5 | US Flats; Epi Ready |
| 148F | 1 | n-type GaP:S | [111B] ±0.5° | 2" | 350 | P/E | 0.042 | (1.8-2)E18 | 76 | <2E5 | EJ Flats; Epi Ready |
| 148A | 1 | n-type GaP:S | [111A] ±0.5° | 2" | 350 | P/E | 0.042 | 2E18 | 76 | <2E5 | SEMI Flats; TEST grade, not fully polished |
| 148B | 1 | n-type GaP:S | [111B] | 2" | 400 | P/P | 0.041 | 2E18 | 72 | <2E5 | EJ Flats; TEST grade - Small scratch |
| 242A | 6 | n-type GaP:S | [311] ±0.5° | 2" | 540 | P/E | 0.06 | 1E18 | 100 | <5E4 | Epi Ready |
| 284C | 5 | p-type GaP:Zn | [100-6° towards[111A]] ±1° | 2" | 400 | P/E | 0.44 | 2.2E17 | 64 | <5.7E4 | SEMI Flats; Epi Ready |
| 284B | 2 | p-type GaP:Zn | [100-2° towards[110]] ±0.5° | 2" | 400 | P/E | 0.43 | 2.4E17 | 61 | <4.7E4 | SEMI Flats; Epi Ready |
| 285C | 1 | p-type GaP:Zn | [100] | 2" | 1,000 | P/E | 0.088 | 1.3E18 | 56 | <4E4 | SEMI Flats; Epi Ready |
| 344A | 1 | p-type GaP:Zn | [100] | 2" | 350 | P/E | 0.045-0.053 | (1.8-2.3)E18 | 58-64 | <5E4 | SEMI Flats; Epi Ready |
| 344B | 1 | p-type GaP:Zn | [100] | 2" | 350 | P/E | 0.045-0.053 | (1.8-2.3)E18 | 58-64 | <5E4 | SEMI Flats; Epi Ready, Back-side poorly lapped |
| 344C | 2 | p-type GaP:Zn | [100] | 2" | 400 | P/E | 0.045-0.053 | (1.8-2.3)E18 | 58-64 | <5E4 | SEMI Flats; TEST grade - Back-side scratched |
| 344D | 4 | p-type GaP:Zn | [100] | 2" | 400 | P/E | 0.045-0.053 | (1.8-2.3)E18 | 58-64 | <5E4 | SEMI Flats; Epi Ready |
| 328 | 3 | p-type GaP:Zn | [100-6° towards[111B]] ±1° | 2" | 400 | P/E | 0.047 | 2.2E18 | 60 | <5.3E4 | SEMI Flats; Epi Ready |
| 319 | 2 | p-type GaP:Zn | [111B] ±0.5° | 2" | 450 | P/E | 0.069-0.074 | (1.3-1.4)E18 | 65-66 | <5E4 | SEMI Flats; Epi Ready |
| 319B | 4 | p-type GaP:Zn | [111B] ±0.5° | 2" | 400 | P/P | 0.069-0.074 | (1.3-1.4)E18 | 65-66 | <5E4 | SEMI Flats; Epi Ready |
| 246 | 1 | p-type GaP:Zn | [311] ±1° | 2" | 350 ±10 | P/E | 0.11 | 8.7E17 | 68 | <2.5E4 | SEMI Flats (PF@[110], SF 90° CCW from PF), Epi Ready |
| 243A | 10 | p-type GaP:Zn | [311] ±0.5° | 2" | 350 | P/E | 0.085 | 1.15E18 | 64 | <2.2E4 | SEMI Flats; Epi Ready |