Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic[4][5], high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
GaN sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.[6] Because GaN transistors can operate at much hotter temperatures and work at much higher voltages than Gallium Arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.
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