What is Gallium Nitride (GaN)?

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic[4][5], high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

GaN sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.[6] Because GaN transistors can operate at much hotter temperatures and work at much higher voltages than Gallium Arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.

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Gallium Nitride on Silicon Carbide, Sapphire

We have a large selection of the following. Please send us the specs that you would llike us to quote you.

1. GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate.   50 mm diam  on axis, n-type, GaN thickness ~0.5 um 
2. GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.  
3. GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness  ~(0.5-0.8) um.  AIN thickness ~0.1um.
4. GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire.  50mm in diameter, on-axis, n-type, GaN thickness  ~(0.5-0.8) um, AIN thickness ~0.1 um.