We have wafers with Total Thickness Varations (TTV) <1 micron in stock. We also sell 100mm Silicon Ingots.
We can dice your 100mm Silicon Wafers into any dimension and can laser the wafer into any diameter.
We have all grades including:
We also have 100mm wafer that can be used as Carrier Wafers for all your wafer bonding needs.
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We have a large selection of 100mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity.
Item | Dia | Type | Dopant | Orie | Res (Ohm-cm) | Thick (um) | Polish | Grade |
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The ever-versatile 4" Test-Grade. One of our most popular items! Client use for many purposes including carrier and cleaning wafers for etch processes. |
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Best Seller! | ||||||||
452 | 100mm | P | B | <100> | 0-100 | 500um | SSP | Test |
Double-Side Polished Silicon Wafers at affordable prices! |
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453 | 100mm | P | B | <100> | 0-100 | 500um | DSP | Test |
589 | 100mm | N | P | <100> | 0-100 | 500um | DSP | Test |
775 | 100mm | P | B | <100> | 1 - 10 | 500um | DSP | Prime |
1095 | 100mm | N | P | <100> | 1-10 | 525um | DSP | Prime |
1095 | 100mm | N | P | <100> | 1-10 | 525um | DSP | Prime |
1115 | 100mm | P | B | <100> | 10-20 | 500um | DSP | Prime |
Silicon wafers, N-type, Test Grade |
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590 | 100mm | N | P | <100> | 0-100 | 500um | SSP | Test |
809 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime |
Degenerately doped silicon. Double side polished wafers also available. |
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1113 | 100mm | N | As | <100> | .001-.005 | 500 um | SSP | Prime |
785 | 100mm | P | B | <100> | .001 - .005 | 525um | SSP | Prime |
783 | 100mm | P | B | <100> | 1 - 10 | 500um | SSP | Prime |
Prime Grade Lifetime >1,200us, Surface Roughness <5A |
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2901 | 23 | P/Boron | [100] | 100mm | 200um | DSP | FZ >1000 | |
1114 | 100mm | P | B | <100> | 5-10 | 380um | SSP | |
1115 | 100mm | P | B | <100> | 10-20 | 500um | DSP | Prime |
1116 | 100mm | P | B | <100> | 10-20 | 500um | SSP | Prime |
MECHANICAL GRADE, When you just need a 4 Inch Substrate |
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1196 | 100mm | ANY | ANY | ANY | >500um | SSP | MECH | |
1248 | 100mm | N | P | <100> | 10-9999 | 240-260um | E/E | |
1249 | 100mm | P | B | <100> | 10-9999 | 240-260um | E/E | |
1317 | 100mm | P | B | <100> | 1-20 | 1000um | SSP | Prime |
Primary flat SEMI (011)+/-1 deg., 30-35mm Secondary flat SEMI 90 +/-5 deg., 16-20mm |
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1575 | 100mm | P | B | <100> | 0.01-0.02 | 525um | SSP | Prime |
1720 | 100mm | P | B | <100> | 1-20 | 200um | DSP | |
1816 | 100mm | P | B | <100> | 5-10 | 525um | SSP | Test |
Item | Qty Stock | Material | Orient. | Diam(mm) | Thck(μm) | Surf. | ResΩcm | Comment |
1077 | 1 | N/Ph | [100] | 100mm | 470um | DSP | FZ >1,000 | Buy as few as one float zone wafer online! |
2901 | 23 | P/Boron | [100] | 100mm | 200um | DSP | FZ >1000 | |
2648 | 200 | Undoped | [100] | 100mm | 500um | SSP | FZ >10,000 | Prime Grade Lifetime >1,200us, Surface Roughness <5A |
2950 | 200 | Undoped | [100] | 100mm | 500um | DSP | FZ >5000 | Undoped Silicon Wafer |
2272 | 300 | Intrinsic Si:- | [100] | 100mm | 500um | DSP | FZ >20,000 | Prime Grade |
MEMC150SB | 150 | N/Sb | [100] | 100mm | 625 | SSP | 0.01-0.02 | 2 SEMI Flats |
6268 | 14 | P/B | [110] ±0.5° | 4" | 500 | P/E | FZ >10,000 | Prime, 2Flats, Empak cst, TTV<5μm |
5585 | 50 | P/B | [110] ±0.5° | 4" | 200 | P/P | FZ 1-2 | SEMI Prime, 2Flats, Empak cst |
H585 | 14 | P/B | [110] ±0.5° | 4" | 200 | P/P | FZ 1-2 | Prime, 2Flats, Empak cst |
I585 | 9 | P/B | [110] ±0.5° | 4" | 200 | P/P | FZ 1-2 | SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge |
H201 | 45 | P/B | [100] | 4" | 220 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
G201 | 75 | P/B | [100] | 4" | 230 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
6269 | 14 | P/B | [100-4° towards[110]] ±0.5° | 4" | 525 | P/E | FZ >2,000 | SEMI Prime, Empak cst, TTV<5μm |
N942 | 67 | P/B | [100] | 4" | 420 | C/C | FZ 850-900 | SEMI Prime, 2Flats, Empak cst |
4902 | 119 | P/B | [100] | 4" | 250 | P/P | FZ 1-3 {0.97-1.01} | SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs. |
6100 | 4 | P/B | [100-6.0° towards[111]] ±0.5° | 4" | 350 | P/P | FZ 1-10 | SEMI Prime, 2Flats, Empak cst |
E791 | 4 | P/B | [100] | 4" | 500 | P/P | FZ 1-5 | SEMI Prime, 2Flats, Empak cst |
4219 | 50 | P/B | [111] ±0.5° | 4" | 400 ±15 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs |
L173 | 71 | P/B | [111] ±0.5° | 4" | 397 | P/E | FZ 10,000-15,000 | SEMI Prime, Backside ACID Etched, Empak cst |
4400 | 50 | n-type Si:P | [110] ±0.5° | 4" | 500 | P/P | FZ >9,600 | SEMI Prime, 2Flats - Primary @ <111>±0.5° - edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs |
B400 | 12 | n-type Si:P | [110] ±0.5° | 4" | 500 | P/P | FZ 5,000-15,000 | SEMI Prime, 2Flats - Primary @ <111>±0.5° - edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs |
N391 | 21 | n-type Si:P | [110] ±0.5° | 4" | 500 | P/P | FZ 5,000-15,000 | SEMI Prime, 2Flats - Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs |
5630 | 4 | n-type Si:P | [100] | 4" | 400 ±10 | P/P | FZ 6,000-8,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
3861 | 9 | n-type Si:P | [100] | 4" | 200 ±10 | P/P | FZ >5,000 | SEMI TEST (Scratches & defects on back-side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst |
H411 | 2 | n-type Si:P | [100] | 4" | 380 | P/E | FZ 5,000-10,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers |
J724 | 7 | n-type Si:P | [100] | 4" | 425 | C/C | FZ >5,000 | 2Flats (p-type flats on n-type wafers), Empak cst |
2355 | 4 | n-type Si:P | [100-1.5° towards[110]] ±0.5° | 4" | 525 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Lifetime>980μs, in Empak |
E454 | 17 | n-type Si:P | [100] | 4" | 500 | G/G | FZ 4,300-6,300 | SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst |
G050 | 20 | n-type Si:P | [100] | 4" | 525 | P/E | FZ 4,200-8,000 | SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
E180 | 13 | n-type Si:P | [100] ±0.2° | 4" | 380 ±10 | P/E | FZ >3,500 | SEMI TEST (in opened Empak cst), 1 Flat |
6241 | 25 | n-type Si:P | [100] | 4" | 400 ±10 | P/P | FZ 3,100-6,800 | SEMI Prime, 2Flats, TTV<5μm |
I937 | 22 | n-type Si:P | [100] | 4" | 200 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs, |
2454 | 6 | n-type Si:P | [100] | 4" | 400 | P/E | FZ 2,000-6,500 | SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs |
5683 | 20 | n-type Si:P | [100] | 4" | 400 | P/E | FZ 2,000-6,500 | SEMI, 2Flats, Empak cst |
S5798 | 15 | n-type Si:P | [100] | 4" | 915 ±10 | E/E | FZ 2,000-3,000 | 1Flat at [100], Empak cst |
E189 | 48 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 1,100-1,600 | SEMI, 1Flat, Empak cst |
S6284 | 1 | n-type Si:P | [100] ±1° | 4" | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<1μm, in Empak cst |
E290 | 9 | n-type Si:P | [100] | 4" | 200 ±10 | BROKEN | FZ 800-1,500 | Broken P/E wafers, in various size pieces, Lifetime >1,000μs |
D189 | 25 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 800-1,500 | SEMI, 1Flat, Empak cst |
H189 | 25 | n-type Si:P | [100] | 4" | 300 | L/L | FZ 800-1,500 | SEMI, 1Flat, Empak cst |
5625 | 15 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 400-1,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
5543 | 9 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 198-200 | SEMI Prime, 1Flat, Empak cst |
6195 | 18 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 50-70 | SEMI Prime, 1Flat, Empak cst |
5973 | 35 | n-type Si:P | [100] | 4" | 570 ±10 | E/E | FZ 50-70 | SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs. |
F843 | 38 | n-type Si:P | [100] | 4" | 300 | P/P | FZ 1.2-2.0 | SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst |
G843 | 5 | n-type Si:P | [100] | 4" | 300 | P/P | FZ 1.2-2.0 | SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst |
6099 | 13 | n-type Si:P | [100-6°] ±0.5° | 4" | 350 | P/P | FZ 1-10 | SEMI Prime, 2Flats, Empak cst |
6128 | 4 | n-type Si:P | [100] | 4" | 525 | P/P | FZ 1-5 | SEMI Prime, 2Flats, Empak cst |
C976 | 5 | n-type Si:P | [100-4° towards[111]] ±0.5° | 4" | 525 | P/E | FZ 1-10 {3.2-4.0} | SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers |
C170 | 19 | n-type Si:P | [111] ±0.5° | 4" | 500 | P/E | FZ 10,000-15,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
K845 | 3 | n-type Si:P | [111] ±0.25° | 4" | 675 | P/E | FZ 10,000-20,000 | SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst, |
1679 | 7 | n-type Si:P | [111] ±0.5° | 4" | 630 | P/G | FZ >7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back-side Fine Ground |
B465 | 14 | n-type Si:P | [111] ±0.5° | 4" | 675 | P/E | FZ >7,000 | SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers |
D465 | 13 | n-type Si:P | [111] ±0.5° | 4" | 675 | P/E | FZ >7,000 | SEMI, 1Flat, in Empak, Lifetime>1,600μs |
E465 | 1 | n-type Si:P | [111] ±0.5° | 4" | 675 | P/E | FZ >7,000 | SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs |
G845 | 1 | n-type Si:P | [111] ±0.25° | 4" | 675 | P/E | FZ 7,000-10,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches |
Q212 | 2 | n-type Si:P | [111] ±0.5° | 4" | 150 ±10 | BROKEN | FZ 5,000-10,000 | Broken P/E wafers, in Empak |
B852 | 25 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst |
D852 | 1 | n-type Si:P | [111-1° towards[110]] ±0.5° | 4" | 525 | P/E | FZ >5,000 | SEMI TEST (scratches on back-side), 1Flat, Empak cst |
D850 | 8 | n-type Si:P | [111] ±0.25° | 4" | 675 | P/E | FZ 5,000-7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs |
F845 | 1 | n-type Si:P | [111] ±0.25° | 4" | 675 | P/E | FZ 5,000-7,000 | SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak |
2773 | 20 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst |
2777 | 21 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/P | FZ >3,000 | SEMI Prime, 1Flat (32.5mm) |
G773 | 15 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers |
L845 | 10 | n-type Si:P | [111] ±0.25° | 4" | 525 | P/E | FZ 3,000-5,000 | SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers |
M845 | 2 | n-type Si:P | [111] ±0.25° | 4" | 525 | P/E | FZ 3,000-5,000 | SEMI TEST (light scratches), 1Flat, Empak cst |
I192 | 5 | n-type Si:P | [111] ±0.5° | 4" | 290 ±10 | P/P | FZ 2,500-3,500 | SEMI TEST (Surface defects), 2Flats, Empak cst |
F278 | 12 | n-type Si:P | [111] ±1° | 4" | 380 | P/E | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers |
D717 | 9 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/E | FZ 1,500-3,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs |
B236 | 6 | n-type Si:P | [111] ±0.5° | 4" | 200 | P/P | FZ 430-550 | SEMI Prime, 1Flat, Empak cst |
C236 | 50 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/E | FZ 430-550 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
D236 | 10 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/E | FZ 430-550 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
S5808 | 17 | n-type Si:P | [111] ±1° | 4" | 475 | P/E | FZ 400-800 | Polished but unsealed and dirty. Can be polished and cleaned for additional charge. SEMI, 1Flat, Empak cst |
2932 | 19 | n-type Si:P | [111] ±0.5° | 4" | 500 ±13 | E/E | FZ 6.03-7.37 | SEMI, 2Flats |
6122 | 10 | n-type Si:P | [111] ±0.5° | 4" | 1,000 | P/P | FZ 0.011-0.013 | Prime, NO Flats, Empak cst |
5731 | 25 | n-type Si:P | [112-3° towards[11-1]] ±0.5° | 4" | 762 | P/P | FZ >100 | SEMI Prime, 1Flat, Empak cst |
S5767 | 68 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4" | 762 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
5739 | 10 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4" | 765 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
B987 | 11 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 4" | 795 | E/E | FZ >100 | SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs |
K184 | 12 | Intrinsic Si:- | [110] | 4" | 500 | P/P | FZ >20,000 | SEMI Test (Both sides with defects), 2Flats @ [111] - Secondary 70.5° CCW from Primary, Empak cst |
6301 | 100 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >30,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
6266 | 50 | Intrinsic Si:- | [100] | 4" | 300 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
5821 | 25 | Intrinsic Si:- | [100] | 4" | 400 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
I693 | 4 | Intrinsic Si:- | [100] | 4" | 500 | P/P | FZ >20,000 | SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides |
S962 | 5 | Intrinsic Si:- | [100] | 4" | 525 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer |
6051 | 50 | Intrinsic Si:- | [100] | 4" | 525 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
F051 | 69 | Intrinsic Si:- | [100] | 4" | 525 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
K146 | 2 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >20,000 | Prime, 1Flat, Empak cst |
J146 | 5 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >20,000 | Prime, 1Flat, Empak cst |
G444 | 4 | Intrinsic Si:- | [100] | 4" | 300 | P/E | FZ 16,000-20,000 | SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect |
L330 | 1 | Intrinsic Si:- | [100] | 4" | 500 | P/E | FZ 13,000-20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front-side Prime polish, Back-side light polish |
6133 | 50 | Intrinsic Si:- | [100] | 4" | 300 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
6061 | 40 | Intrinsic Si:- | [100] | 4" | 500 | P/E | FZ >10,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
E775 | 4 | Intrinsic Si:- | [100] | 4" | 615 ±10 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
G412 | 17 | Intrinsic Si:- | [100] | 4" | 800 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
6297 | 50 | Intrinsic Si:- | [100] | 4" | 1,000 | P/P | FZ >2,000 | SEMI Prime, 1Flat, Empak cst |
6137 | 57 | Intrinsic Si:- | [111] ±0.5° | 4" | 500 | P/P | FZ >25,000 | SEMI Prime, 1Flat, Empak cst |
3697 | 46 | Intrinsic Si:- | [111] ±0.5° | 4" | 300 | P/E | FZ 20,000-40,000 | SEMI, 1Flat, TTV<5μm, Empak cst |
E384 | 17 | Intrinsic Si:- | [111] ±0.5° | 4" | 450 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
R698 | 4 | Intrinsic Si:- | [111] ±0.5° | 4" | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, Extra 3 free non-prime wafers included with 4 prime wafers |
J219 | 25 | Intrinsic Si:- | [111] ±0.5° | 4" | 500 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
5542 | 23 | P/B | [110] ±0.25° | 4" | 525 | P/E | 5-10 | SEMI Prime, Primary Flat @ [111]±0.25°, S Flat @ [111]±5° 109.5° CW from PF, Empak cst |
6097 | 75 | P/B | [110] ±0.25° | 4" | 525 | P/E | 5-10 | SEMI Prime, 2Flats, Empak cst |
F764 | 50 | P/B | [110] ±0.5° | 4" | 380 | P/P | 1-30 | SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst |
D636 | 9 | P/B | [110] ±0.5° | 4" | 750 | P/E | 1-100 | SEMI Prime (back-side polished but not Prime), 2Flats, Empak cst, TTV<5μm, Bow/Warp<10μm |
6243 | 12 | P/B | [100] | 4" | 1,000 | P/P | 200-700 | Prime, NO Flats, Empak cst |
5584 | 6 | P/B | [100] | 4" | 3,000 | P/E | 46-50 | SEMI Prime, 1Flat, Individual cst, Group of 6 wafers |
I808 | 4 | P/B | [100] | 4" | 500 | P/P | 10-20 | SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly |
K483 | 200 | P/B | [100] | 4" | 515 ±10 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst |
5949 | 24 | P/B | [100] | 4" | 750 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst |
6159 | 275 | P/B | [100] | 4" | 1,000 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
6230 | 275 | P/B | [100] | 4" | 1,000 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
G511 | 2 | P/B | [100] | 4" | 300 | P/P | 8-12 | SEMI TEST - Front-side badly polished, 2Flats, Empak cst |
S5762 | 9 | P/B | [100] | 4" | 610 ±10 | E/E | 8-12 | 1Flat at [100], Empak cst |
5994 | 25 | P/B | [100] | 4" | 300 | P/P | 5-10 {6-7} | SEMI Prime, 2Flats, Empak cst, TTV<9μm |
F994 | 24 | P/B | [100] | 4" | 300 | P/P | 5-10 {6-7} | SEMI Prime, 2Flats, Empak cst, TTV<9μm, Cassettes of 9 + 15 wafers |
6274 | 600 | P/B | [100] | 4" | 300 | P/P | 5-10 | SEMI Prime, 2Flats, Empak cst |
5727 | 2 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI TEST (in Opened cassette), 2Flats, Empak cst |
6059 | 800 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI Prime, 2Flats, Empak cst |
C649 | 1 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI TEST (with bad surface), 1Flat, Empak cst |
D819 | 1 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI Prime, 1Flat, hard cst, Back-side slightly darker than normal |
E136 | 24 | P/B | [100] | 4" | 380 | P/E | 5-10 | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be cleaned for extra fee |
C815 | 2 | P/B | [100] | 4" | 380 | BROKEN | 5-10 | Broken P/E Wafers, 1Flat, in Empak |
D259 | 2 | P/B | [100] | 4" | 380 | BROKEN | 5-10 | Broken P/E Wafers, 2Flats, in Empak |
D649 | 1 | P/B | [100] | 4" | 380 | BROKEN | 5-10 | Broken (largest piece is ~30%), 1Flat, in Empak |
6223 | 375 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
B247 | 5 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI, 2Flats, Empak cst |
E326 | 21 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 4, 6 and 11 wafers |
H452 | 24 | P/B | [100] | 4" | 525 | P/E | 5-10 | SEMI Test, Dirty and scratched, 2Flats, Empak cst |
6019 | 175 | P/B | [100] | 4" | 1,000 | P/E | 5-10 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
6313 | 24 | P/B | [100] | 4" | 525 | P/E | 4.1-4.5 | Prime, NO Flats, Empak cst |
5644 | 23 | P/B | [100] | 4" | 250 ±10 | P/P | 1-5 {4.1-4.7} | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
6273 | 10 | P/B | [100-4.0°] ±0.5° | 4" | 275 | P/E | 1-30 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
5997 | 9 | P/B | [100] | 4" | 300 | P/P | 1-10 | SEMI Prime, 2Flats, Empak cst |
E485 | 3 | P/B | [100-4° towards[110]] ±0.5° | 4" | 300 | P/E | 1-10 | SEMI Test, 2Flats, Empak cst, Wafers with pits |
M334 | 3 | P/B | [100] | 4" | 381 ±5 | P/P | 1-30 | SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst |
G189 | 10 | P/B | [100] | 4" | 475 | P/E | 1-10 | SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth |
5440 | 25 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc per ASTM F1188. |
B742 | 25 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~1.0ppma per ASTM F1319. |
C742 | 25 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content ~0.2ppma per ASTM F1319. |
J440 | 20 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc per ASTM F1188. |
K440 | 7 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9-1.1)E16/cc per ASTM F1319, Oxygen content (8.4-8.0)E17/cc per ASTM F1188. |
L440 | 50 | P/B | [100] | 4" | 500 | P/P | 1-50 | SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188. |
6197 | 500 | P/B | [100] | 4" | 525 | P/P | 1-10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
F307 | 12 | P/B | [100] | 4" | 525 | P/P | 1-10 | SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers |
G672 | 24 | P/B | [100] | 4" | 525 | P/P | 1-10 | SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee |
S216 | 100 | P/B | [100] | 4" | 525 | P/P | 1-5 | SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches |
6200 | 15 | P/B | [100-4° towards[110]] ±0.5° | 4" | 525 | P/E | 1-20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
6242 | 10 | P/B | [100] | 4" | 525 | P/E | 1-5 | SEMI Prime, 1Flat, Empak cst |
4959 | 25 | P/B | [100] | 4" | 525 | NP/PN | 1-10 | SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides |
D959 | 25 | P/B | [100] | 4" | 525 | NOxP/POxN | 1-10 | SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst |
S5841 | 26 | P/B | [100-0.5°] | 4" | 590 ±10 | E/E | 1-3 | SEMI Prime, 2Flats |
4829 | 25 | P/B | [100] | 4" | 2,100 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers |
3996 | 7 | P/B | [100] | 4" | 3,000 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers |
6058 | 10 | P/B | [100] | 4" | 3,000 | P/E | 1-30 | SEMI, 2Flats, Individual cst |
B594 | 10 | P/B | [100] | 4" | 3,175 | P/P | 1-10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
K588 | 2 | P/B | [100] | 4" | 3,175 | P/P | 1-10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
2586 | 9 | P/B | [100] | 4" | 3,200 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers |
6015 | 4 | P/B | [100] | 4" | 4,000 | P/P | 1-100 | SEMI Prime, 2Flats, Individual cst |
5737 | 4 | P/B | [100] | 4" | 890 ±15 | P/P | 0.5-10.0 | SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst |
5990 | 100 | P/B | [100] | 4" | 525 | P/E | 0.1-0.2 | SEMI Prime, 2Flats, Empak cst |
2612 | 5 | P/B | [100] | 4" | 350 | P/E | 0.095-0.130 | SEMI Prime, 2Flats, Empak cst |
3031 | 5 | P/B | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers |
5833 | 450 | P/B | [100] | 4" | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
G780 | 141 | P/B | [100] | 4" | 300 | E/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst, TTV<4μm |
5771 | 25 | P/B | [100-4°] ±0.5° | 4" | 380 ±10 | P/P | 0.01-0.02 | SEMI Prime, Empak cst, TTV<2μm |
6140 | 90 | P/B | [100] | 4" | 525 | P/E | 0.01-0.02 | SEMI, 2Flats, Empak cst, TTV<5μm |
T155 | 10 | P/B | [100] | 4" | 525 | P/POx | 0.008-0.020 | SEMI Prime, 2Flats, Empak cst |
I135 | 44 | P/B | [100] | 4" | 500 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Wafers with striation marks |
J135 | 25 | P/B | [100] | 4" | 500 | P/P | 0.001-0.005 | SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened |
6073 | 300 | P/B | [100] | 4" | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm |
6209 | 500 | P/B | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
K173 | 1 | P/B | [100] | 4" | 525 | BROKEN | 0.001-0.005 | Broken wafer (shattered into many pieces), 1Flat |
5420 | 85 | P/B | [100] | 4" | 800 | C/C | 0.001-0.005 | SEMI, 2Flats, Empak cst, With striation marks |
6214 | 5 | P/B | [100] | 4" | 2,000 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers |
S5774 | 1 | P/B | [100] | 4" | ? | P/P | ? | SEMI Test, 2Flats, Empak cst |
D939 | 25 | P/B | [100] | 4" | 375 | P/E | <0.0015 {0.00091-0.00099} | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
I374 | 15 | P/B | [111] | 4" | 350 | P/E | 2-3 | Prime, NO Flats, Empak cst |
L620 | 20 | P/B | [111] | 4" | 1,000 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers |
M620 | 7 | P/B | [111] | 4" | 1,000 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst |
D677 | 15 | P/B | [111] ±0.5° | 4" | 1,000 | P/E | 1-10 | SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers |
D891 | 3 | P/B | [111] ±0.5° | 4" | 525 | P/P | 0.2-1.0 | SEMI Prime, 1Flat, Empak cst |
E891 | 20 | P/B | [111] ±0.5° | 4" | 525 | P/P | 0.2-1.0 | SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
4279 | 225 | P/B | [111-4°] ±0.5° | 4" | 525 | P/E | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst |
C228 | 25 | P/B | [111-4°] ±0.5° | 4" | 525 ±15 | P/EOx | 0.005-0.015 {0.0086-0.0135} | SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back-side |
1223 | 9 | P/B | [111-3°] ±0.5° | 4" | 525 | P/E | 0.002-0.016 | SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers |
D858 | 20 | P/B | [111-3°] | 4" | 525 | P/E | 0.002-0.004 | SEMI Prime, 1Flat, Empak cst |
4949 | 75 | P/B | [111] ±0.5° | 4" | 1,000 | P/E | <0.01 | SEMI Prime, 1Flat, Empak cst |
L403 | 20 | P/B | [112] ±0.5° | 4" | 500 | P/P | 1-100 | SEMI Prime, 1Flat at <1,1,-1>, Empak cst |
3623 | 18 | n-type Si:P | [110] ±0.5° | 4" | 525 | P/P | 20-80 | SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst |
G538 | 14 | n-type Si:P | [110] ±0.5° | 4" | 500 | P/P | 3-10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers |
4891 | 25 | n-type Si:P | [110] ±0.3° | 4" | 525 | P/P | 3-10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |
6021 | 200 | n-type Si:P | [110] ±0.3° | 4" | 525 | P/P | 3-10 | Prime, 2Flats, Empak cst |
H725 | 13 | n-type Si:P | [110] ±0.3° | 4" | 525 | P/P | 3-10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers |
5549 | 25 | n-type Si:P | [110] ±0.5° | 4" | 525 | P/E | 3-9 | SEMI Prime, Primary Flat @ <111>±1°, S Flat @ <111> 70.5° CW from PF, TTV<10μm Bow/Warp<30μm, Empak cst |
6014 | 325 | n-type Si:P | [110] ±0.5° | 4" | 525 | P/E | 3-9 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
J615 | 8 | n-type Si:P | [110] ±0.2° | 4" | 525 | P/E | 3-10 | SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4μm Bow<15μm, Warp<30μm, Empak cst |
D898 | 22 | n-type Si:Sb | [110] ±0.5° | 4" | 525 | P/P | 0.01-0.02 {0.0176-0.0180} | Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst |
4024 | 21 | n-type Si:As | [110] ±0.5° | 4" | 275 | P/P | 0.001-0.005 | SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°, |
Secondary at 70.5°±5° CW from Primary, Empak cst | ||||||||
4293 | 25 | n-type Si:As | [110] ±0.5° | 4" | 275 ±10 | P/P | 0.001-0.005 | SEMI Prime, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst, TTV<5μm |
E024 | 13 | n-type Si:As | [110] ±0.5° | 4" | 275 ±10 | P/P | 0.001-0.005 | SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst |
I220 | 44 | n-type Si:As | [110] ±0.5° | 4" | 400 | E/E | 0.001-0.005 | SEMI, 2Flats @ [111] - Secondary 70.5° CW from Primary, Empak cst |
S5002 | 8 | n-type Si:P | [100] | 4" | 310 ±10 | P/P | 20-30 | SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee |
5892 | 21 | n-type Si:P | [100] | 4" | 350 | P/P | 20-23 | SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst |
G827 | 14 | n-type Si:P | [100] | 4" | 525 | P/E | 10-30 | SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers |
5924 | 5 | n-type Si:P | [100] | 4" | 5,800 | P/E | 10-100 | SEMI Prime, 2Flats, Individual cst |
D389 | 5 | n-type Si:P | [100] | 4" | 5,800 | P/E | 10-100 | SEMI Prime, 2Flats, Individual cst |
5337 | 11 | n-type Si:P | [100-4° towards[111]] | 4" | 525 | P/E | 9-11 | SEMI Prime, 2Flats, Empak cst |
5849 | 23 | n-type Si:P | [100] | 4" | 525 | P/E | 7-11 | SEMI Prime, 2Flats, Empak cst |
P849 | 18 | n-type Si:P | [100] | 4" | 525 | P/E | 7-11 | SEMI Prime, 2Flats, Empak cst |
5171 | 25 | n-type Si:P | [100] | 4" | 224 | P/E | 5-10 | SEMI Flats (two), Empak cst, Cassette of 12 + 13 wafers |
D033 | 23 | n-type Si:P | [100] | 4" | 224 | BROKEN | 5-10 | SEMI Test, 2Flats, Empak cst |
L758 | 3 | n-type Si:P | [100] | 4" | 500 | P/P | 4-6 | SEMI Prime, 2Flats, Empak cst |
D830 | 13 | n-type Si:P | [100] | 4" | 350 ±10 | P/P | 3-5 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 8 wafers |
E830 | 8 | n-type Si:P | [100] | 4" | 350 | P/P | 3-5 | SEMI Test, 2Flats, Empak cst, Haze, pits, scratches |
B752 | 38 | n-type Si:P | [100] | 4" | 450 | C/C | 3-5 | SEMI Prime, 2Flats, Empak cst |
6032 | 275 | n-type Si:P | [100] | 4" | 525 | P/E | 3-9 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
C925 | 14 | n-type Si:P | [100] | 4" | 500 ±10 | P/P | 2-5 | SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers |
D123 | 19 | n-type Si:P | [100] | 4" | 500 ±10 | P/P | 2-5 | SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers |
6224 | 275 | n-type Si:P | [100] | 4" | 525 ±10 | P/P | 2-6 | SEMI Prime, 1Flat, Empak cst |
S5920 | 2 | n-type Si:P | [100] | 4" | 250 ±5 | P/P | 1-100 | SEMI Prime, TTV<3μm, Empak cst |
5322 | 25 | n-type Si:P | [100] | 4" | 280 ±2 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst, TTV<2μm |
O173 | 100 | n-type Si:P | [100] | 4" | 280 | P/P | 1-5 | SEMI Prime, 2Flats, Empak cst |
5772 | 5 | n-type Si:P | [100] ±0.2° | 4" | 400 ±10 | P/P | 1-3 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
6001 | 250 | n-type Si:P | [100] | 4" | 400 ±10 | P/P | 1-10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
F209 | 7 | n-type Si:P | [100] | 4" | 400 ±5 | P/P | 1-10 | SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<20μm, Warp<20μm |
J762 | 25 | n-type Si:P | [100] ±1° | 4" | 400 ±10 | P/P | 1-10 | SEMI Test, 2Flats, Empak cst, TTV<5μm |
5903 | 6 | n-type Si:P | [100] | 4" | 400 | P/E | 1-6 | SEMI Prime, 2Flats, Empak cst |
S5763 | 11 | n-type Si:P | [100] ±1° | 4" | 465 ±10 | E/E | 1-3 | SEMI, 1Flat, Empak cst |
6246 | 11 | n-type Si:P | [100] | 4" | 500 ±10 | P/P | 1-100 | SEMI, 2Flats, Empak cst |
5841 | 23 | n-type Si:P | [100] | 4" | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
6082 | 75 | n-type Si:P | [100] | 4" | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst |
6158 | 200 | n-type Si:P | [100] | 4" | 525 | P/E | 0.3-0.5 | SEMI Prime, 2Flats, Empak cst |
P243 | 24 | n-type Si:P | [100] | 4" | 300 | P/E | 0.29-0.31 | SEMI Prime, 2Flats, Empak cst |
6134 | 12 | n-type Si:P | [100] | 4" | 200 | P/P | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched |
E134 | 40 | n-type Si:P | [100] | 4" | 200 | P/P | 0.10-0.15 | SEMI Test, 2Flats, Empak cst, Both sides with scratches |
F134 | 25 | n-type Si:P | [100] | 4" | 200 | P/E | 0.10-0.15 | SEMI Prime, 2Flats, Empak cst, Front-side Prime, Back-side Test grade polish |
E031 | 25 | n-type Si:Sb | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst |
5899 | 10 | n-type Si:Sb | [100] | 4" | 305 ±3 | P/P | 0.010-0.025 | SEMI Prime, 2Flats, Empak cst, TTV<1μm |
6138 | 150 | n-type Si:Sb | [100] | 4" | 525 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
F138 | 75 | n-type Si:Sb | [100] | 4" | 525 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
U671 | 15 | n-type Si:As | [100] | 4" | 545 | E/E | 0.002-0.004 | SEMI, 1Flat, Empak cst |
F562 | 3 | n-type Si:As | [100] | 4" | 525 | PlyAP/E | 0.001-0.005 | With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, |
[More Info] | ||||||||
5677 | 68 | n-type Si:As | [100] | 4" | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
F219 | 1 | n-type Si:As | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Test (Chipped edge), 2Flats, Empak cst |
F734 | 275 | n-type Si:As | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
J220 | 2 | n-type Si:As | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm |
E720 | 44 | n-type Si:As | [100] | 4" | 550 ±10 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
4975 | 13 | n-type Si:Sb | [211] ±0.5° | 4" | 1,500 ±15 | P/P | 0.01-0.02 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
F975 | 4 | n-type Si:Sb | [211] ±0.5° | 4" | 1,600 | C/C | 0.01-0.02 | SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee |
E395 | 21 | n-type Si:P | [111] | 4" | 1,200 | P/P | 35-85 | SEMI Prime, 2Flats, Empak cst |
G925 | 4 | n-type Si:P | [111] ±0.5° | 4" | 1,500 | P/E | >20 {24-29} | SEMI Prime, 2Flats, TTV<5μm, in Empak cassettes of 2 wafers |
J329 | 21 | n-type Si:P | [111] ±0.5° | 4" | 250 | P/E | 18-25 | SEMI Prime, 2Flats, Empak cst |
4387 | 75 | n-type Si:P | [111] ±0.5° | 4" | 500 | P/P | 11-15 | SEMI Prime, 2Flats, Empak cst, Both-sides Epi Ready polished |
5259 | 50 | n-type Si:P | [111] ±0.5° | 4" | 525 | P/E | 1-5 | SEMI Prime, 2Flats, Empak cst |
5637 | 11 | n-type Si:P | [111] ±0.5° | 4" | 750 | P/P | 1-100 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
E677 | 10 | n-type Si:P | [111] ±0.5° | 4" | 1,000 | P/E | 1-10 | SEMI Prime, 2Flats, in Empak cassettes of 3, 3 & 4 wafers. |
F677 | 7 | n-type Si:P | [111] ±0.5° | 4" | 1,000 | P/E | 1-10 | SEMI Prime, 2Flats, Empak cst |
E601 | 5 | n-type Si:P | [111] ±0.5° | 4" | 10,000 | P/E | 1-100 {8.3-9.9} | Prime, NO Flats, Individual cst, groups of 5 wafers |
S5810 | 3 | n-type Si:P | [111] ±1.0° | 4" | 525 | P/E | 0.3-50.0 | SEMI Prime, 2Flats, Empak cst |
S5840 | 47 | n-type Si:P | [111] ±1.0° | 4" | 565 ±10 | E/E | 0.3-50.0 | SEMI Prime, Empak cst |
4420 | 10 | n-type Si:Sb | [111] | 4" | 525 | P/E | 0.016-0.020 | SEMI Prime, 2Flats, Empak cst |
5546 | 25 | n-type Si:Sb | [111] | 4" | 525 | P/E | 0.016-0.020 | SEMI Prime, 2Flats, Empak cst |
9544 | 125 | n-type Si:Sb | [111-4°] ±0.5° | 4" | 420 | P/EOx | 0.008-0.018 {0.0138-0.0151} | SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal |
B786 | 19 | n-type Si:Sb | [111-4.0°] ±0.5° | 4" | 475 ±15 | P/E | 0.005-0.020 {0.0113-0.0156} | SEMI Prime, 2Flats, Empak cst |
N758 | 20 | n-type Si:As | [111] | 4" | 450 | P/E | 0.004-0.005 | SEMI Prime, 1Flat, Empak cst |
5890 | 25 | n-type Si:As | [111] ±0.5° | 4" | 750 | P/E | 0.004-0.006 | SEMI Prime, 2Flats, Empak cst |
5740 | 50 | n-type Si:As | [111-4°] ±0.5° | 4" | 300 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted |
5741 | 25 | n-type Si:As | [111-4°] ±0.5° | 4" | 325 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal |
D741 | 14 | n-type Si:As | [111-4°] ±0.5° | 4" | 300 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers |
9239 | 150 | n-type Si:As | [111-2°] ±0.5° | 4" | 400 | P/EOx | 0.001-0.004 {0.0018-0.0036} | SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst |
6219 | 300 | n-type Si:As | [111-4°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
J656 | 15 | n-type Si:As | [111-4°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
3556 | 137 | n-type Si:As | [111] ±0.5° | 4" | 1,000 | P/E | 0.001-0.005 {0.0031-0.0040} | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm |
X7299 | 125 | n-type Si:As | [111-4°] | 4" | ? | L/L | ? | SEMI TEST (in Opened Empak cst), 2Flats (2nd @ 45°) |
H151 | 2 | n-type Si:P | [112] ±0.5° | 4" | 500 | P/P | 11-15 | SEMI Prime, 1Flat, in Empak cassettes of 2 wafers |
S5775 | 3 | Si | ? | 4" | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst |
5784 | 4 | Si | [110] ±0.5° | 4" | 525 | C/C | ? | Empak cst |
5029 | 17 | P/B | [100] | 4" | 380 | OxP/EOx | 5-10 | SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick |
S5776 | 25 | Si | ? | 4" | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst |
F837 | 21 | n-type Si:P | [100] | 4" | 500 | P/P | FZ 198-200 | SEMI Prime, 2Flats, Empak cst |
H412 | 15 | Intrinsic Si:- | [100] | 4" | 650 | P/P | FZ >10,000 | SEMI Prime, with LM, 1Flat, Empak cst, TTV<2μm |
17F3 | 13 | P/B | [110] ±0.5° | 4" | 525 | P/E | 4-6 | SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF, Empak cst |
13S2 | 15 | P/B | [110] | 4" | 525 | P/E | 2-10 | PF<111> SF 109.5° |
16L | 4 | P/B | [100] | 4" | 300 | P/E | 800-5,400 | SEMI Prime, 1Flat, Empak cst |
15W2 | 25 | P/B | [100] | 4" | 500 | P/P | 10-20 | SEMI Prime, 2Flats, Empak cst |
21F | 10 | P/B | [100] | 4" | 3,000 | P/E/P | 10-15 | SEMI Prime, 1Flat, Individual cst |
16P1 | 7 | P/B | [100-6°] | 4" | 250 | P/E | 8-12 | SEMI Prime, 2Flats, Empak cst |
16A2 | 9 | P/B | [100-2°] | 4" | 300 | P/E | 6-7 | SEMI Prime, 2Flats, Empak cst |
15U2 | 25 | P/B | [100] | 4" | 1,000 | P/E | 6-7 | SEMI Prime, 2Flats, Empak cst |
21Q1 | 25 | P/B | [100] | 4" | 1,600 | P/P | ~6 | SEMI Prime, 1Flat, Individual cst |
16F | 13 | P/B | [100-6°] | 4" | 525 | P/E | 4-6 | SEMI Prime, 2Flats, Empak cst |
1.60E+04 | 22 | P/B | [100] | 4" | 200 | P/P | 1-20 | SEMI Prime, 1Flat, Empak cst |
15V2 | 25 | P/B | [100] | 4" | 250 | P/E | 1-10 | SEMI Prime, 2Flats, Empak cst |
16R3 | 25 | P/B | [100] | 4" | 300 | P/E/P | 1-10 | SEMI Prime, 2Flats, Empak cst |
16H2 | 8 | P/B | [100-10°] | 4" | 300 | P/E | 1-10 | SEMI Prime, 2Flats, Empak cst |
16C1 | 10 | P/B | [100] | 4" | 500 | P/P | 1-10 | SEMI Prime, 2Flats, Empak cst |
16B2 | 13 | P/B | [100-6°] | 4" | 525 | P/E | 1-100 | SEMI Prime, 1Flat, Empak cst |
21A1 | 25 | P/B | [100] | 4" | 1,200 | P/P | 1-15 | SEMI Prime, 2Flats, Empak cst |
17U1 | 50 | P/B | [100] | 4" | 800 | P/EP | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst |
20W2 | 27 | P/B | [100] | 4" | 3,100 | P/P | CZ 0.006-0.009 | SEMI Prime, 2Flats, Individual cst |
17V1 | 10 | P/B | [100-6°] | 4" | 525 | P/E | 0.0042-0.0047 | SEMI Prime, 2Flats, Empak cst |
J772 | 25 | P/B | [100] | 4" | 150 ±15 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst, TTV<2μm |
13R1 | 25 | P/B | [111-3°] | 4" | 300 | P/E | 3-4 | SEMI Prime, 2Flats, Empak cst |
13V1 | 15 | P/B | [111-4°] | 4" | 525 | P/E | 1.5-6.0 | SEMI Prime, 1Flat, Empak cst |
15F2 | 25 | P/B | [111-3°] | 4" | 400 | P/E | 0.015-0.018 | SEMI Prime, 1Flat, Empak cst |
14T1 | 16 | P/B | [111] | 4" | 525 | P/E | 0.005-0.006 | SEMI Prime, 1Flat, Empak cst |
15B1 | 20 | P/B | [111-1.5°] | 4" | 525 | P/E | 0.002-0.004 | SEMI Prime, 1Flat, Empak cst |
15D1 | 15 | P/B | [111] | 4" | 300 | P/E | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
15I1 | 21 | n-type Si:P | [110] | 4" | 1,000 | P/E | 12-15 | ?? |
16Y2 | 15 | n-type Si:P | [100] | 4" | 200 | P/P | 49-57 | SEMI Prime, 2Flats, Empak cst |
16Z6 | 25 | n-type Si:P | [100] | 4" | 400 | P/E | 32-70 | SEMI Prime, 2Flats, Empak cst |
18S1 | 25 | n-type Si:P | [100] | 4" | 400 | P/P | 17-19 | Prime, NO Flats, Empak cst |
16V4 | 25 | n-type Si:P | [100] | 4" | 700 | P/E | 14-18 | Prime, NO Flats, Empak cst |
18U2 | 25 | n-type Si:P | [100] | 4" | 250 | P/E | 11-13 | SEMI Prime, 2Flats, Empak cst |
18V1 | 20 | n-type Si:P | [100] | 4" | 400 | P/P | 10-18 | SEMI Prime, 2Flats, Empak cst |
16T1 | 50 | n-type Si:P | [100] | 4" | 525 | P/E | 5-10 | SEMI Prime, 1Flat, Empak cst |
16X3 | 24 | n-type Si:P | [100] | 4" | 259 | P/P | 3-5 | SEMI Prime, 2Flats, Empak cst |
18Q1 | 11 | n-type Si:P | [100-4°] | 4" | 525 | P/E/P | 1-10 | SEMI Prime, 2Flats, Empak cst |
16U2 | 14 | n-type Si:P | [100-2°] | 4" | 525 | P/E | >1 | SEMI Prime, 2Flats, Empak cst |
17C2 | 6 | n-type Si:P | [100] | 4" | 1,000 | P/P | 1-20 | SEMI Prime, 2Flats, Empak cst |
21S3 | 7 | n-type Si:P | [100] | 4" | 2,500 | P/P | 1-100 | SEMI Prime, 2Flats, Individual cst |
18L1 | 4 | n-type Si:Sb | [100] | 4" | 450 | P/E | ~0.03 | SEMI Prime, 1Flat, Empak cst |
18H1 | 6 | n-type Si:Sb | [100] | 4" | 400 | P/E | ~0.02 | SEMI Prime, 2Flats, Empak cst |
18K1 | 18 | n-type Si:Sb | [100] | 4" | 600 | P/E | 0.01-0.03 | Strange Flats |
21V | 8 | n-type Si:Sb | [100-4°] | 4" | 1,500 | P/E/P | 0.005-0.030 | SEMI Prime, 2Flats, Empak cst |
20X1 | 17 | n-type Si:Sb | [100] | 4" | 1,500 | P/E/P | 0.001-0.030 | SEMI Prime, 2Flats, Empak cst |
22K1 | 15 | n-type Si:P | [111] | 4" | 1,500 | P/E | >20 | SEMI Prime, 2Flats, Empak cst |
13U1 | 75 | n-type Si:P | [111] | 4" | 250 | P/E | 18-25 | SEMI Prime, 2Flats, Empak cst |
14C1 | 75 | n-type Si:P | [111] | 4" | 250 | P/E | 18-25 | SEMI Prime, 2Flats, Empak cst |
13W3 | 12 | n-type Si:P | [111] | 4" | 280 | P/E | 2-5 | SEMI Prime, 2Flats, Empak cst |
22J1 | 6 | n-type Si:P | [111] | 4" | 2,500 | P/P | 2.0-2.5 | SEMI Prime, 2Flats, Individual cst |
14A1 | 200 | n-type Si:P | [111] | 4" | 280 | P/E | 1-2 | SEMI Prime, 2Flats, Empak cst |
13M1 | 12 | n-type Si:P | [111-4°] | 4" | 525 | P/E | 1-15 | SEMI Prime, 1Flat, Empak cst |
13P3 | 6 | n-type Si:P | [111-1.5°] | 4" | 525 | P/E | 1-2 | SEMI Prime, 2Flats, Empak cst |
13J4 | 50 | n-type Si:P | [111] | 4" | 1,000 | P/E | 1-10 | SEMI Prime, 2Flats, Empak cst |
13Q4 | 3 | n-type Si:P | [111] | 4" | 1,000 | P/E | 1-10 | SEMI Prime, 2Flats, Empak cst |
14M1 | 75 | n-type Si:Sb | [111-4°] | 4" | 450 | P/E | 0.025-0.045 | SEMI Prime, 2Flats, Empak cst |
14W1 | 10 | n-type Si:Sb | [111-2.5°] | 4" | 625 | P/E | 0.021-0.023 | SEMI Prime, 2Flats, Empak cst |
1.40E+02 | 25 | n-type Si:Sb | [111] | 4" | 525 | P/E | 0.016-0.020 | SEMI Prime, 2Flats, Empak cst |
14G1 | 125 | n-type Si:Sb | [111-4°] | 4" | 525 | P/E | 0.010-0.020 | SEMI Prime, 2Flats, Empak cst |
14I2 | 25 | n-type Si:Sb | [111-2°] | 4" | 380 | P/E | 0.008-0.018 | SEMI Prime, 1Flat, Empak cst |
14F2 | 600 | n-type Si:Sb | [111-3°] | 4" | 400 | P/E | 0.008-0.018 | SEMI Prime, 1Flat, Empak cst |
15A1 | 50 | n-type Si:Sb | [111-3°] | 4" | 400 | P/E | 0.005-0.018 | SEMI Prime, 2Flats, Empak cst |
15G2 | 25 | n-type Si:As | [111] | 4" | 450 | P/E | 0.004-0.005 | SEMI Prime, 1Flat, Empak cst |
14N1 | 50 | n-type Si:As | [111-3°] | 4" | 400 | P/E | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
14D4 | 50 | n-type Si:As | [111-4°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
14K1 | 10 | n-type Si:As | [111-4°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
14P1 | 25 | n-type Si:As | [111-2.5°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 1Flat, Empak cst |
14R1 | 25 | n-type Si:As | [111-3°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst |
17H1 | 3 | Intrinsic Si:- | [100] | 4" | 525 | P/E | 400-1,000 | SEMI Prime, 1Flat, Empak cst |