Epitaxial Silicon Wafers for Research and Device Fabrication

Epitaxial silicon wafers, also called silicon epi wafers, combine a single-crystal silicon substrate with one or more grown crystalline layers whose thickness, conductivity type, and resistivity are specified for the device design. UniversityWafer supplies epi structures for CMOS research, PIN diodes, power devices, and photovoltaic research, including P/P+, N/N+, and custom dual-layer configurations.

Compare silicon epitaxy, wafer resistivity, crystal orientation, and the thickness and doping of each layer before requesting a quote. If you need a bare substrate prepared for growth, explore epi-ready wafers; an epi-ready surface does not by itself mean an epitaxial layer has already been deposited.

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PIN Epitaxial Silicon Wafers for Diode Research

An electrical engineering graduate student requested a quote for the Epitaxial silicon wafers for semiconductor researchfollowing:

Do you have anything like a PIN Epi Silicon wafer available? 

Reference #274681 for specs and pricing.

Get Your Epi-Silicon Wafer Quote FAST! Or, Buy Online and Start Researching Today!





Custom Epitaxial Silicon Layers for Solar Cell Research

A graduate student requested a quote for the following.

We want to order some epi silicon wafer for the solar cell. Here's the specification.

substrate: Monocrystalline silicon wafer for solar cell degradation
layer 1: P+ layer (near to the substrate)  doping 5*10^19 cm^-3 thickness 1um
layer 2: P- layer (on the top) doping 5*1015 cm^-3  thickness 3um
quantity: 5

Question:

Before we quote the Epi wafers you request, we need information about the substrate. Please answer the following:

  1. What wafer diameter do you need?
  2. What substrate thickness do you need?
  3. What silicon crystal orientation do you need?
  4. Do you need single-side polished or double-side polished silicon wafers?
  5. What dopant and resistivity do you need for the substrate?

We need this information before we can quote.

Answer:

I don't mind the diameter, thickness and resistivity of the substrate. It will be great if you can find the cheapest substrate for us. We need <100> orientation p dopant substrate and the wafers should be one-side polished.

Could you give me a quote on that? Thank you and have a good day.

UniversityWafer, Inc. Quoted:

We offer:

Item   Qty.   Description
AL62. 5   Epi wafers 2"Ø P+/P-/N+ Substrate: 2"Ø×250±25µm n-type Si:P[100]±0.5°, Ro=(1-100)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flats EPI Layer 1: P+ layer, 6±1µm thick, p-type Si:B doping density 5E19/cc  EPI Layer 2 (top layer): P- layer, 5±0.5µm thick, p-type Si:B, doping density 5E15/cc

Reference #115190 for specs and pricing.

Epi-Ready Silicon vs. Epitaxial Silicon Wafers

Epi-ready silicon wafers are starting substrates prepared for epitaxial growth. An epitaxial silicon wafer already has a grown single-crystal layer on its substrate. State which product you need, since surface preparation and an existing epi layer are different specifications. A polished wafer alone does not establish the full surface-cleanliness and defect requirements for your growth process.

Silicon Epitaxial Growth and Layer Doping

In silicon epitaxial growth, a crystalline layer grows with an orientation related to the underlying substrate. Chemical vapor deposition (CVD) is widely used for silicon epitaxy. Specify the dopant and target concentration or resistivity for each layer separately from the bulk wafer. Boron is commonly used for p-type silicon, while phosphorus and other donor dopants produce n-type silicon.

Silicon homoepitaxy grows silicon on silicon. Other epitaxial material systems have their own growth conditions and substrate requirements. Choose process details for the intended material stack rather than applying a single growth recipe to every semiconductor.

P/P+, N/N+, PIN, and Dual-Layer Epi Structures

A lightly doped p-type epi layer on a heavily doped p-type substrate may be described as P/P+; N/N+ similarly describes an n-type epi layer on an n+ substrate. Always provide a layer sequence and define whether it is listed from the top surface toward the substrate. For PIN structures and other junction stacks, specify the conductivity type, thickness, and doping target of every region. Review silicon p-n junction principles when defining the required junction arrangement.

For dual-layer epitaxy, include both layer specifications and the starting substrate. The customer examples on this page show how requirements for layer order, backside treatment, substrate resistivity, and quantity are captured in a quote. Those examples describe particular requested structures; they are not universal specifications for every epi wafer.

Epitaxial Silicon Wafer Specifications to Include in a Quote

  • Substrate: wafer diameter, bulk thickness, crystal orientation, dopant, and substrate resistivity.
  • Epi stack: number of layers, sequence, thickness and tolerance, conductivity type, dopant, and resistivity or carrier-concentration target for each layer.
  • Surface and geometry: growth-side finish, backside treatment, double-side polishing where needed, total thickness variation, bow, and warp.
  • Inspection: agreed limits for particles, stacking faults, other defects, thickness uniformity, and any required characterization reports.
  • Order details: quantity, intended process, packaging requirements, and required delivery date.

Distinguish the total substrate thickness from the epitaxial layer thickness. Silicon wafer thickness and epi thickness serve different purposes in the device stack. Likewise, substrate resistivity and epi resistivity can be very different, so list both values with their units.

Epitaxial Silicon Applications: CMOS, Diodes, and Power Devices

Controlled epi layers are used in CMOS fabrication research, image sensors, photodiodes, bipolar devices, power-device structures, and selected solar-cell experiments. The useful layer thickness and doping profile depend on the device architecture. Performance also depends on the subsequent fabrication process, junction design, interfaces, and defect control.

Use the inventory tables and research examples to identify a starting specification, then confirm availability and the required layer structure. Browse silicon epi wafers online or submit the quote form for a custom multilayer request.

Dual-Layer Silicon Epitaxy on Heavily Doped Substrates

A Semiconductor Device Engineer requested the following quote:

Can you guys grow dual epi layers on 4 inch N+ substrate? Please see below for details. 

UniversityWafer, Inc. Quoted:

We offer:

Item   Qty.   Description
HJ48. 25/50/100   p/n/n+ Epi wafers, 4" (100.0±0.5mm)Ø×420±25µm
Substrate: n-type Si:As[111-4°]±0.5°, Ro=(0.0015-0.0030)Ohmcm,
TTV<5µm, Bow<40µm, Warp<40µm, TIR<6µm,
One-side-polished, back-side etched, 1 SEMI Flat, Edges: rounded,
Backside seal: 17.5±2.5µm Si monolayer by mass transfer (necessary to prevent autodoping),

EPI Layer 1: 20±2µm thick, n-type Si:P, Ro=4.6±0.4Ohmcm,
EPI Layer 2 (top layer): 25.0±2.5µm thick, p-type Si:B, Ro=0.0100±0.0001hmcm,
Overall: SF<10/cm², Slips<0.15 (Edge exclusion 3mm) , LPD≤5 @>20µm, Total LLS≤16@>0.5µm, Haze, foreign matter, scratches, edge chips: all none, Others per SEMI, Sealed in Empak or equivalent cassette.

Reference #260691 for specs and pricing.

UniversityWafer, Inc. supplies epitaxial silicon wafers with specified layer thicknesses and doping profiles for Cross-sectional diagram of a CMOS image sensor built on an epitaxial coated silicon wafer showing microlens, color filter array, metal interconnects, photodiode, and deep trench isolation layersCMOS image sensor research, power devices, and other semiconductor applications. Discuss the active-layer requirements and defect acceptance criteria for your device before ordering.

For a custom CVD-grown epi structure, define the silicon doping profile, layer sequence, and substrate separately. The heavily doped starting wafer and the epitaxial active layer can have different electrical specifications.

  • CMOS Image Sensors – Low dark current, high dynamic range

  • Power Devices (IGBTs, MOSFETs) – Improved breakdown voltage and switching speed

  • RF and Microwave Circuits – Enhanced signal isolation and linearity

  • Photodetectors and Photodiodes – Low defect densities, high purity layers

  • MEMS Devices – Compatible with deep trench and high-aspect ratio etching

Epitaxial silicon wafer applications in CMOS sensors, power devices, PIN diodes, and solar research

Specifications

Parameter Typical Values
Wafer Diameter 100 mm, 150 mm, 200 mm, 300 mm
Orientation <100>, <111>
Epi Layer Thickness 2 µm – 20 µm
Epi Layer Resistivity 5–25 Ohm·cm (custom available)
Substrate Resistivity 0.01–0.05 Ohm·cm
Doping Type P- or N-type (boron, phosphorus, arsenic)
Surface Finish DSP, SSP, Prime Grade

Available Formats

  • Prime Grade

  • Test Grade

  • DSP (Double Side Polished)

  • Ultra-flat & Low TTV Options

Why Buy from UniversityWafer?

  • Decades of experience supporting university & industrial R&D

  • Global shipping with fast turnaround

  • Responsive technical support

  • Competitive pricing for small and bulk quantities

Silicon Epi Wafer Inventory: Sizes, Layer Thicknesses, and Resistivities

6" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
G541 150 6"Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+

4" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
D274 6 4"Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 - 440 n/n+
E4_151 8 4"Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5
22±1.5		 p- Si:B
p- Si:B		 3.6±10%
300±50		 P/P/P+
E4_134 7 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1
6.85±0.75		 p- Si:B
p- Si:B		 4.5±10%
0.75±0.15		 P/P/P+
E4_104 6 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+
E4_22 3 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% P/P+
E4_106 4 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+
E4_105 7 4"Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+
E4_26 10 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 ±10% P/P+
E4_107 8 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 200±10% P/P+
E4_108 9 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 80±10% P/P+
E4_42 4 4"Øx440μm p- Si:B[111] 0.008-0.020 P/E 32 p- Si:B 600 ±10% P/P+
E4_109 8 4"Øx440μm p- Si:B[111] 0.01-0.02 P/E 32.5 p- Si:B 100±10% P/P+
E4_21 5 4"Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 40 p- Si:B 550 ±10% P/P+
E4_133 3 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 14
10		 n- Si:P
p- Si:B		 2.5±0.3
15		 N/P/P+
E4_135 2 4"Øx525μm p- Si:B[111] 0.01-0.02 P/E 14
10		 n- Si:P
p- Si:B		 2.5±10%
9±10%		 n/p/p+
E4_113 8 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20
10		 p- Si:B
n- Si:P		 10±1.5
5.5±0.7		 P/N/N+
E4_127 5 4"Øx381μm n- Si:As[111] 0.0010-0.0035 P/E 33
10		 p- Si:B
n- Si:P		 12±10%
4±10%		 P/N/N+
E4_147 9 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 33±5
9		 p- Si:B
n- Si:P		 12±2
4		 P/N/N+
E4_128 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37
16.5		 p- Si:B
n- Si:P		 35±10%
12.5±10%		 P/N/N+
E4_124 7 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45
7±1		 p- Si:B
n- Si:P		 13±10%
12±10%		 P/N/N+
E4_144 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45
7		 p- Si:B
n- Si:P		 14.5±10%
12±10%		 P/N/N+
E4_132 8 4"Øx525μm n- Si:As[111] 0.002-0.005 P/E 88
88		 p- Si:B
n- Si:P		 80.5±10%
27±10%		 P/N/N+
E4_145 7 4"Øx380μm n- Si:As[111] 0.002-0.005 P/E 105
26		 p- Si:B
n- Si:P		 0.0035±10%
5±10%		 P/N/N+
E4_122 5 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15
6.8±0.8		 n- Si:P
n- Si:P		 3.8±0.5
0.55±0.15		 N/N/N+
E4_84 9 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+
E4_143 8 4"Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3
54.5±3.6		 n- Si:P
n- Si:P		 25±5
4.4		 N/N/N+
E4_68 9 4"Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+
E4_90 8 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+
E4_10 25 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 90±10% N/N+
E4_89 9 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.07 ±10% N/N+
E4_91 9 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.13 ±10% N/N+
E4_92 11 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.15 ±10% N/N+
E4_93 7 4"Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.19 ±10% N/N+
E4_30 7 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 65 ±10% N/N+
E4_116 5 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20
10		 n- Si:P
n- Si:P		 7±10%
2±0.4		 N/N/N+
E4_69 8 4"Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+
E4_117 11 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5
28.5		 n- Si:P
n- Si:P		 12±10%
2±10%		 N/N/N+
E4_129 9 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26
11		 n- Si:P
n- Si:P		 18±10%
2±10%		 N/N/N+
E4_54 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+
E4_52 15 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+
E4_53 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+
E4_125 14 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28
8 - 12		 n- Si:P
n- Si:P		 11±10%
1 - 3		 N/N/N+
E4_120 19 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28
9 - 11		 n- Si:P
n- Si:P		 8 - 11
1 - 3		 N/N/N+
E4_111 20 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30
15
5		 n- Si:P
n- Si:P
n- Si:P		 11±10%
4±10%
1.5±10%		 N/N/N/N+
E4_123 10 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 39.5
12		 n- Si:P
n- Si:P		 29±10%
4±10%		 N/N/N+
E4_81 20 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >300 ±10% N/N+
E4_77 18 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 41.5 n- Si:P >200 N/N+
E4_17 2 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+
E4_79 8 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+
E4_16 1 4"Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+
E4_115 6 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50
15		 n- Si:P
n- Si:P		 36±4
5.4±0.7		 N/N/N+
E4_24 10 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+
E4_59 9 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+
E4_5 15 4"Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+
E4_94 5 4"Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+
E4_112 4 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80
10		 n- Si:P
n- Si:P		 60±10%
2±1		 N/N/N+
E4_146 7 4"Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80
10		 n- Si:P
n- Si:P		 70±10%
2±1		 N/N/N+
E4_137 8 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5
15		 p- Si:B
n- Si:P		 15±10%
6±0.9		 P/N/N+
E4_136 7 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38
18		 p- Si:B
n- Si:P		 55±10%
10±10%		 P/N/N+
E4_9 4 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 14 n- Si:P 4.25 ±10% N/N+
E4_55 4 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 15 n- Si:P 90 ±10% N/N+
E4_27 10 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 18 n- Si:P 0.25 ±10% N/N+
E4_56 6 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+
E4_57 8 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+
E4_58 3 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 101 ±10% N/N+
E4_98 5 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+
E4_97 9 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+
E4_100 15 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+
E4_2 16 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+
E4_14 2 4"Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+
E4_66 5 4"Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+
E4_95 10 4"Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+
E4_138 4 4"Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58
15
5		 n- Si:P
n- Si:P
n- Si:P		 60±10%
8±10%
3±10%		 N/N/N/N+
E4_148 9 4"Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60
20		 n- Si:P
n- Si:P		 40.5±4.5
10±2		 N/N/N+
E4_60 9 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 60 ±10% N/N+
E4_12 10 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+
E4_19 6 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 70 n- Si:P 60 ±10% N/N+
E4_61 9 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 75 n- Si:P 125 ±10% N/N+
E4_44 6 4"Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 100 n- Si:P 420±10% N/N+

3" Epitaxial Silicon Wafers

Item Qty in Stock Substrate EPI Comment
Size Type Res Ωcm Surf. Thick μm Type Res Ωcm
K827 4 3"Øx508μm p- Si:B[111] 0.008-0.020 P/E 12.5
140±10		 p- Si:B
n- Si:P		 2.35
33.60		 p+
8611 50 3"Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 - 0.33 n/n+
F667 120 3"Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 - 1.4 n/n+, Sealed in cassettes of 24 wafers
E3_32 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% N/N+
E3_40 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% N/N+
E3_2 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% N/N+
E3_54 8 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% N/N+
E3_55 12 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% N/N+
E3_24 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% N/N+
E3_38 15 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% N/N+
E3_62 14 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% N/N+
E3_30 15 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% N/N+
E3_48 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% N/N+
E3_22 12 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% N/N+
E3_42 4 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 0.05±10% N/N+
E3_3 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4.8±10% N/N+
E3_5 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% N/N+
E3_27 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% N/N+
E3_63 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 16.5±10% N/N+
E3_17 6 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 4±10% N/N+
E3_25 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 20±10% N/N+
E3_53 8 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 30 n- Si:P 4.5±10% N/N+
E3_15 15 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 9.5±10% N/N+
E3_16 15 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 12±10% N/N+
E3_51 8 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 11±10% N/N+
E3_4 9 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 36 n- Si:P 4±10% N/N+
E3_23 5 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% N/N+
E3_1 20 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 41 n- Si:P 25±10% N/N+
E3_41 9 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 42 n- Si:P 20.5±10% N/N+
E3_19 18 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 42.5 n- Si:P 17±10% N/N+
E3_14 8 3"Øx355μm n- Si:As[111] 0.001-0.005 P/E 52.5 n- Si:P 12.5±10% N/N+
E3_56 19 3"Øx381μm n- Si:As[111] 0.001-0.005 P/E 56 n- Si:P 12±10% N/N+
E3_45 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 70 n- Si:P 73±10% N/N+
E3_33 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 72 n- Si:P 12.5±10% N/N+
E3_7 19 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 73 n- Si:P 84±10% N/N+
E3_44 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 13±10% N/N+
E3_49 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 11±10% N/N+
E3_12 8 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 12±10% N/N+
E3_10 15 3"Øx375μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 22.5 ±10% N/N+
E3_34 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 19.5±10% N/N+
E3_20 20 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 85 n- Si:P 66±10% N/N+
E3_59 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 90
18		 n- Si:P
n- Si:P		 41±10%
5±10%		 N/N/N+
E3_43 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% N/N+
E3_11 19 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% N/N+
E3_13 2 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% N/N+
E3_21 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% N/N+
E3_8 5 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% N/N+
E3_37 14 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% N/N+
E3_39 4 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% N/N+
E3_29 10 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% N/N+
E3_26 18 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% N/N+
E3_9 3 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% N/N+
E3_28 15 3"Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% N/N+
E3_31 10 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% N/N+
E3_35 15 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% N/N+
E3_6 12 3"Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% N/N+
E3_64 10 3"Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75
25		 n- Si:P
n- Si:P		 40±10%
2.5±10%		 N/N/N+

100mm P/B (100) 525μm 0.008-0.020 ohm-cm DSP
100±10 N/PHn 40 - 60 ohm-cm n/p+, Back-side polished after Epi deposition
certificate available

100mm P/B (111) 400μm .01-0.10 ohm-cm SSP
6.522±1.5 p- Si:B p- Si:B .6±10% 300±50 P/P/P+

76.2mm N/As (111) 0.001-0.005 ohm-cm SSP
75 n- Si:P 11±10% N/N+