Gallium Nitride on Sapphire (GaN) for University Research

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Gallium Nitride Substrates

We have a large selection Gallium Nitride Wafers and Aluminum Nitride on Sapphire Wafers

GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate.
50 mm diam on axis, n-type, GaN thickness ~0.5 um

GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.

GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on
6H silicon carbide. 50mm in diameter on-axis, n-type.
GaN thickness ~(0.5-0.8) um. AIN thickness ~0.1um.

GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on
AIN layer on sapphire. 50mm in diameter, on-axis, n-type,
GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.