Stoichiometric LPCVD Nitride for Research & Production

university wafer substrates

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PECVD Nitride

PECVD Oxide

PECVD OxyNitride

PECVD Low Stress Nitride

PECVD Silicon Carbide

PECVD Carbon Doped Oxide

 

Silicon Nitride (SiN)

SiN has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

Stoichiometric LPCVD Nitride

Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

Our Low Stress Nitride

retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

Our Super low stress nitride:

has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: 600MPa Tensile
  • Refractive Index: 2.00
  • Temperature: 350C