A PhD candidate requested the following quote for their research project.
We need some SiC-epi-on-Si wafers (That is, SiC epi layer on silicon substrate).
Can I provide our own wafer? Is it acceptable to send you our own wafer after oxidation and Ion implantation? For SiC film, would you please tell me it is amorphous or polycrstal?
Reference #93518 for specs and pricing.
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Question:
I am a doctoral candidate looking for epitaxial p-i-n structure. If you do
not have that I can also look for highly doped Si wafer and on top of that
2-3 microns thick intrinsic epi layer. I also wonder the information about
the doping level the thicknesses and how many quantities you are selling
and the price for single wafer and batch price. I prefer [100] crystal
direction.
What I require is the doped region is higly doped as high as
possible(~1x10^(19)) and the intrinsic region is low doped as low as
possible.
0.1 micron P+ Si
--------------------------------
3 micron intrinsin Si
--------------------------------
N+ substrate
Answer:
I have to send these wafers to ion implantation company also so it
will take a long time even to start to processing it.
Item
AB64.
Epi wafers 4"Ø P+/Intrinsic/N++
Substrate: 4"Ø×525±25µm n-type Si:Sb[100] or Si:P[100], Ro<1 Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flats (two) Middle EPI Layer: undoped Si:-, Ro > 1,000 Ohmcm for at least 4µm, Middle layer will about 15µm thick with 4µm where Ro>1,000 Ohmcm. Top EPI Layer: p-type Si:B Ro<1 Ohmcm. For at least 0.1µm. Top layer will be about 3µm thick with at least 0.1µm where p-type Ro <1 Ohmcm
AB64b.
Epi wafers 4"Ø Intrinsic/N++ Substrate: 4"Ø×525±25µm n-type Si:Sb[100] or Si:P[100], Ro<1 Ohmcm, One-sides-polished, back-side Alkaline etched, SEMI Flats (two) EPI Layer: undoped Si:-, Ro > 1,000 Ohmcm for at least 4µm
Reference #103453 for pricing.
An associate professor of a university engineering department requested the following:
I see the following is in stock: Standard Simox 400 100mm, Top SI Thickness 190 nm, Top Si Uniformity +5 nm, Box Thickness 375nm, Box Uniformity +-10nm, Pin Holes <0.1/cm, P/Boron (100), 525um thick handle (semi standard) 2 week delivery. I'm wondering what the doping level is, and what the price/wafer is (and how many are in stock). I'm guessing the (100) is orientation? We're interested in device layers around 150nm, and possibly n-type for higher mobility, so I'm wondering what else you might soon have or anticipate getting in stock.
The application for this is to test damage and recovery from focused ion beam Si-ion implantation into Si by using transport measurements in a Hall bar geometry. To get the best device structure we really need something with a top layer thickness as close to the ion range as possible, which is about 90nm.
Reference #109795 for specs and pricing.
An x-ray spectroscopy technician requested help with the following:
I am also interested in about 8 undoped Ge wafers with the same specifications (concerning the size, orientation and doping). I don't know how you realize the doping of the wafer but in case you realize it with ion implantation please advise me. Indeed I am currently working on my PhD thesis which is about the depth profiling of ion implanted semiconductor wafers. For this purpose I use the grazing emission x-ray fluorescence technique (GEXRF) where the x-ray fluorescence intensity is measured as a dependece of the emission angle relatively to the surface. So if you can dope the wafers by ion implantation with energies between 0.5 and 8 keV and fluxes between 5E14 and 5E15 atoms/cm2, I would be highly interested and order implanted wafers instead of undoped wafers.
Reference #110732 for specs and pricing.
Ion implantation is a process used in materials science and semiconductor fabrication where ions of a material are accelerated in an electrical field and then directed into a target material (like a semiconductor wafer). This process alters the physical, chemical, or electrical properties of the target material in a controlled way.
The basic steps involved in ion implantation are:
Ion Generation: Ions are typically created by a process known as ionization, where electrons are removed from or added to atoms or molecules to give them an electrical charge.
Acceleration: The ions are then accelerated using an electric field to high speeds. The amount of acceleration depends on the electric field and the mass of the ions.
Target Bombardment: The accelerated ions are directed towards the target material. Upon impact, the ions penetrate the surface of the target and come to rest beneath the surface.
Modification of Target Properties: As the ions come to rest in the target material, they change its properties. In semiconductor manufacturing, this process is used to change the electrical properties of the material, such as creating p-type or n-type regions in silicon.
The depth of penetration of the ions into the target material depends on their energy and the nature of the target material. The process allows for precise control over the depth and concentration of implanted ions, making it essential for modern semiconductor device fabrication. Ion implantation is used for doping semiconductors, forming metal layers in silicon technology, and modifying materials for various purposes in research and industry.